Dipankar Saha

http://www.ee.iitb.ac.in/~dsaha

• Microelectronics
• New Device Physics
• Semiconductor Spintronics
• Spin injection, transport and detection in III-V systems
• Device Reliability

• Ph.D, University of Michigan, 2005-2008.
• M. Tech, Indian Institute of Technology, Bombay, 2003-2005.
• Bachelor of Engineering, Jadavpur University, 1997-2001.

• Assistant Professor, Indian Institute of Technology, Bombay, India, 2009-Present.
• Intel, Portland, USA, 2008-2009.
• IBM, Kolkata, India, 2001-2003.

1. “Electronic transport driven spin-dynamics”, L. Siddiqui, D. Saha, S. Datta, and P.Bhattacharya, arXiv:0811.0204 (2009).
2. “A monolithically integrated magneto-opto-electronic circuit”, D. Saha, D. Basu, and P. Bhattacharya, Appl. Phys. Lett., 93, 194104, (2008). Also selected by virtual Journal of Nanoscale Science and Technology.
3. Electrically driven spin-dynamics of paramagnetic impurities”, D. Saha, L. Siddiqui, P.Bhattacharya, S. Datta, D. Basu and M. Holub, Phys. Rev. Lett. 100, 196603 (2008). Also selected by virtual Journal of Nanoscale Science and Technology.
4. “Two dimensional spin diffusion in multi-terminal lateral spin-valves”, D. Saha, D. Basu, M. Holub, and P. Bhattacharya, Appl. Phys. Lett. 92, 022507 (2008). Also selected by virtual Journal of Nanoscale Science and Technology.
5. “Optical polarization modulation and gain anisotropy in an electrically injected spin laser”, D. Basu, D. Saha, and P. Bhattacharya, Phys. Rev. Lett. 102,093904 (2008). Also selected by virtual Journal of Nanoscale Science and Technology.
6. “Characteristics of an electrically injected InAs/GaAs quantum dot spin laser operating at 200 K”, D. Basu, D. Saha, C. C. Wu, M. Holub, Z. Mi and P. Bhattacharya, Appl. Phys. Lett. 92, 091119 (2008). Also selected by virtual Journal of Nanoscale Science and Technology.
7. “Amplification of spin-current polarization”, D. Saha, M. Holub, and P. Bhattacharya, Appl. Phys. Lett. 91, 072513 (2007). Also selected by virtual Journal of Nanoscale Science and Technology.
8. “Spin injection and threshold current reduction in a semiconductor laser”, M. Holub, J. Shin, D. Saha, and P. Bhattacharya, Phys. Rev. Lett. 98, 146603 (2007).
9. “Electron spin injection from a regrown Fe layer in a spin-polarized vertical-cavity-surface-emitting laser”, M. Holub, P. Bhattacharya, J. Shin, and D. Saha, J. Crys. Growth v.301-302, 602 (2007).
10. “Magnetoresistance of fully epitaxial MnAs/GaAs lateral spin-valves”, M. Holub, D. Saha, and P. Bhattacharya, J. Vac. Sci. and Technol. B 25, 1004 (2007).
11. “Physical Mechanism and Gate Insulator Material Dependence of Generation and Recovery of Negative-Bias Temperature Instability in p-MOSFETs”, D. Varghese, G. Gupta, L. M. Lakkimsetti, D. Saha, K. Ahmed, F. Nouri, and S. Mahapatra, IEEE Trans. Electron Devices 54, 1672 (2007).
12. “Epitaxially grown MnAs/GaAs lateral spin valves”, D. Saha, M. Holub, P. Bhattacharya, and Y. C. Liao, Appl. Phys. Lett. 89, 142504 (2006). Also selected by virtual Journal of Nanoscale Science and Technology.
13. “On the generation and recovery of hot carrier induced interface traps: A Critical Examination of the 2D Reaction Diffusion Model”, D. Saha, D. Varghese, and S. Mahapatra, IEEE Electron Device Lett. 27, 188 (2006).
14. “Role of anode hole injection and valence band hole tunneling on interface trap generation during hot carrier injection stress”, D. Saha, D. Varghese, and S. Mahapatra, IEEE Electron Device Lett. 27, 585 (2006).
15. “Spin-polarized surface-emitting lasers”, P. Bhattacharya, M. Holub, and D. Saha, Phys. stat. sol. ( c ) 3, 4396 (2006).
16. “On the generation and recovery of interface traps in MOSFETs subjected to NBTI, FN and HCI stress”, S. Mahapatra, D. Saha, D. Varghese, and P. Bharath Kumar, IEEE Trans. Electron Devices 53, 1583 (2006).

1. “A spin capacitor using Mn impurities embedded in a GaAs channel”, D. Saha, D. Basu, and P. Bhattacharya, Device Research Conference, Santa Barbara, CA, Jun 2008.
2. “Threshold Current Reduction and Electrical Modulation of Degree of Circular Polar-ization in InAs/GaAs Quantum Dot Spin-VCSELs” (INVITED), D. Basu, C. C. Wu, D. Saha, Z. Mi, and P. Bhattacharya, Conference on Lasers and Electro-Optics, SanJose, CA, May 2008.
3. “Threshold Current Reduction and Electrical Modulation of Degree of Circular Polarization in InAs/GaAs Quantum Dot Spin-VCSELs”, D. Basu, C. C. Wu, D. Saha, Z. Mi, and P. Bhattacharya, Conference on Lasers and Electro-Optics, San Jose, CA, May, 2008.
4. “Measurement of Spin Relaxation Time of Diluted Paramagnetic Mn Impurities in GaAs”, D. Saha, M. Holub, and P. Bhattacharya, North American Molecular Beam Epitaxy Conference, The University of New Mexico, Albuquerque, NM, Sep 2007.
5. “Spin-Based Memory Using MnAs/GaAs Multi-Terminal Non-local Spin-Valves”, D. Saha, M. Holub, and P. Bhattacharya, 52nd Magnetism and Magnetic Materials Conference, Tampa, FL, Nov 2007.
6. “Spin injection and accumulation in epitaxially grown MnAs/GaAs lateral spin valves”, D. Saha, M. Holub and P. Bhattacharya, 10th Joint MMM/Intermag Conference, Balti more, MD, Jan 2007.
7. “Threshold Current Reduction and Output Power Enhancement with Magnetic Field in Sub-Monolayer InAs Quantum Dot VCSELs”, D. Basu, C. C. Wu, D. Saha, M. Holub, Z. Mi, and P. Bhattacharya, 20th Annual Meeting of the IEEE Lasers and Electro-Optics Society, Buena Vista, FL, Oct 2007.
8. “On the Physical Mechanism of NBTI in Silicon Oxynitride p-MOSFETs: Can Differences in Insulator Processing Conditions Resolve the Interface Trap Generation versus Hole Trapping Controversy?”,S. Mahapatra, K. Ahmed, D. Varghese, A. E. Islam, G. Gupta, L. Madhav, D. Saha, and M. A. Alam, IEEE International Reliability Physics Symposium, Phoenix, AZ, Apr 2007.
9. “Magnetoresistance of fully-epitaxial MnAs/GaAs lateral spin-valves”, M. Holub, D. Saha, and P. Bhattacharya, 24th North American Molecular Beam Epitaxy Conference, Durham, NC, Oct 2006.
10. “Spin-polarized surface-emitting lasers” (INVITED), P. Bhattacharya, M. Holub, and D. Saha, 4th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors, Sendai, Japan, Aug 2006.
11. “Threshold current reduction in a vertical-cavity-surface-emitting laser via electron spin injection”, M. Holub, J. Shin, D. Saha, and P. Bhattacharya, IEEE Lasers and Electro Optics Society Conference, Montreal, Que, Oct 2006.
12. “Electrical spin injection from a regrown Fe layer in a spin-polarized vertical-cavity-surface-emitting-laser”, M. Holub, P. Bhattacharya, J. Shin, and D. Saha, 14th International conference on Molecular Beam Epitaxy, Tokyo, Japan, Sep 2006.
13. “On the dispersive versus arrhenius temperature activation of NBTI time evolution in plasma nitrided gate oxides: Measurements, theory and implications”, D. Varghese, D. Saha, S. Mahapatra, K. Ahmed, F. Nouri, and M. Alam, IEEE International Electron Devices Meeting, Washington, DC, Dec 2005.
14. “Impact of Substrate Bias on p-MOSFET Negative Bias Temperature Instability”, P. Bharath Kumar, T. R. Dalei, D. Varghese, D. Saha, S. Mahapatra, and M. A. Alam, IEEE International Reliability Physics Symposium, San Jose, CA, Apr 2005.
15. “Mechanism of Negative Bias Temperature Instability in CMOS Devices: Degradation, Recovery and Impact of Nitrogen” (INVITED), S. Mahapatra, M. A. Alam, P. Bharath Kumar, T. R. Dalei, and D. Saha, IEEE International Electron Devices Meeting, San Francisco, CA, Dec 2005.
16. “Negative bias temperature instability in CMOS devices”, S. Mahapatra, M. A. Alam, P. Bharath Kumar, T. R. Dalei, D. Varghese, and D. Saha, Insulating Films on Semiconductors, Leuven, Belgium, Jun 2005.

Department of Electrical Engineering
IIT Bombay, Powai
Mumbai 400 076, India
Email : dsaha[AT]ee.iitb.ac.in
Phone (Internal(O)) : (0091 22) - 2576 7443
Phone (Internal(R)) :
Office room no: 244
Fax: (0091 22) - 25723707