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Apurba Laha

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Contact Information

Department of Electrical Engineering
IIT Bombay, Powai
Mumbai 400076, India
Email : laha[AT] ee.iitb.ac.in

Phone :(O) +91 22 2576 9408
Fax: +91 22 – 2572 3707


News: Ritam's work published in Applied Physics Letters (Vol. 115, p. 063502 (2019)), has been highlighted as the “news feature” in “Semiconductor Today” (http://www.semiconductor-today.com/news_items/2019/sep/iit-200919.shtml). Congratulation to Ritam!!

**Postdoctoral/Scientist positions available**

To work on
1. “Plasma Assisted Molecular Beam Epitaxial Growth of III (In/Ga/Al)-Nitride related semiconductors and Heterostructures for Green LASER and/or UV LED
2. Fabrication and Characterization of III-Nitride Green LASER diode and/or UV LED

The work involves 1. Growth and Characterization of High quality epitaxial GaN, InGaN and AlGaN layers and their heterostructures on Sapphire, SiC and GaN substrates using “Plasma Assisted Molecular Beam Epitaxy Technique”. 2) “Fabrication and Characterization of III-Nitride Green LASER diode and/or UV LED using the heterostructure grown by PA-MBE”. Monthly salary: Rs.50000-80000 depending on experience and qualification.

Candidates who have prior knowledge on MBE growth and/or III-Nitride devices are encouraged to apply.

For application and any further information, please contact Prof. A. Laha, Department of Electrical Engineering, IIT Bombay. Email: laha@ee.iitb.ac.in

Research Interests

* III-Nitride semiconductors and heterostructures: Growth using Molecular Beam Epitaxy. Application: Optoelectronics devices

* Oxide based electronics: Epitaxial rare earth oxides (high-K dielectrics) on III-Nitride substrates for MOSHEMT application.

* III-Nitride Nano and Quantum wires. III-Nitride based Single Photon Source.

* Physics of thin film growth

* Solid phase epitaxy of semiconductor and oxide materials, Encapsulated solid phase epitaxy, Molecular Beam epitaxy, Mismatch epitaxy.

Academic Background

  • PhD (2004) (Materials Science): Indian Institute of Science, Bangalore, India
  • MSc (1999) (Physics) Jadavpur University, Kolkata, India

Work Experience

  • July 2019-Present: Professor, Department of Electrical Engineering, IIT Bombay.
  • September 2014-June 2019: Associate Professor, Department of Electrical Engineering, IIT Bombay.
  • January 2012 – August 2014: Assistant Professor, Department of Electrical Engineering, IIT Bombay.
  • January 2009- December 2011: Group Leader, Institute of Electronic Materials and Devices (MBE), Leibniz University, Hannover, Germany
  • January 2007 - December 2008: Senior Research Scientist, Institute of Electronic Materials and Devices (MBE), Leibniz University, Hannover, Germany
  • May 2005 - December 2006: Alexander von Humboldt Research Fellow, Institute of Electronic Materials and Devices (MBE), Leibniz University, Hannover, Germany.
  • July 2003 – February 2005: Research Associate, Indian Institute of Science Bangalore

Awards

  • Nominated among the best three researchers from Leibniz Universität Hannover for Heinz-Maier-Leibnitz-Price of German Research Foundation (DFG)
  • International Einstein Award for Scientific Achievement by International Biographical Center, Cambridge, England
  • Cited in Marquis Who’s Who in Science, 2010 edition.
  • Alexander von Humboldt Research Fellowship, 2005.
  • Best Poster Award in the National Seminar on Ferroelectrics and Dielectrics (NSFD) 2002, Bangalore, India.
  • National Talent Scholarship (1993) awarded by Govt. of West Bengal, India
  • Member of editorial board, ISRN Material Science, Hindawi Publishing Corp

Students

  • Ravindra Singh Pokharia (PhD)
  • Ritam Sarkar (PhD)
  • Swagata Bhunia (PhD)
  • Diman Nag (PhD)
  • Arnab Mandal (PhD)
  • Umang Singh (PhD)
  • Soumyadip Chatterjee (PhD)
  • Robin Dahiya (PhD)
  • Navneet Kumar Thakur (PhD)
  • Dhammapriy Gayakwad (PhD)
  • Talari Vinod kumar (MTech)
  • Sarang Kalra (MTech)

Past Students

  • Santhosh Varma (PhD) Joined in Micron Technology
  • Kankat Ghosh (PhD), Assistant Professor, IIT Jammu
  • Nikhilendu Tiwary (PhD) Postdoc, Aalto University, Finland
  • Sudipta Das (PhD)

Research Publications

  • Refereed Journals and Conf. Proceedings: 120, h-index: 22, i10-index: 33 (Google Scholar)
  • Book chapters: 2
  • Invited talks: 60
  • Conference contribution: 100

Selected publications

82. Ravindra Singh Pokharia et al. A Highly Sensitive and Robust GaN Ultraviolet Photodetector Fabricated on 150-mm Si(111) Wafer IEEE Transactions on Electron Devices 68, 2796 (2021)

81. Ritam Sarkar et al. Epi-Gd₂O₃-MOSHEMT: A Potential Solution Toward Leveraging the Application of AlGaN/GaN/Si HEMT With Improved ION/IOFF Operating at 473 K IEEE Transactions on Electron Devices 68, 2653 (2021)

80. A. Rawat et al Epitaxial Ge-Gd2O3 on Si(111) Substrate by Sputtering for Germanium-on-Insulator Applications Thin Solid Films, 731, 138732 (2021).

79. Dhiman Nag et al Carrier-Induced Defect Saturation in Green InGaN LEDs: A Potential Phenomenon to Enhance Efficiency at Higher Wavelength Regime ACS Photonics 8, 926 (2021).

78. Dhiman Nag et al Impact of Ex-Situ Heating on Carrier Kinetics in GaN/InGaN Based Green LEDs. ECS J. Solid State Sci. Technol. 10, 035004 (2021)

77. Sudipta Mukherjee et al Stability Enhancement of High Frequency DC Distribution Network by Incorporating Wide Bandgap β-Ga2O3 Power MOSFET as Switching Element IEEE Electric Power and Energy Conference (EPEC), pp. 1-6 (2020)

76. Sudipta Mukherjee et al Investigation of Structural Parameter Variation on Extended Gate TFET for Bio-Sensor Applications 7th International Conference on Electrical Engineering, Computer Sciences and Informatics (EECSI), pp. 187-191 (2020)

75. Dhiman Nag et al Role of defect saturation in improving optical response from InGaN nanowires in higher wavelength regime Nanotechnology 31 (49), 495705 (2020)

74. VSSNV Bellamkonda et al Ultra high-sensitive, prompt response and recovering Pt/(Pt+ SiO2) cermet layer/GaN-based hydrogen sensor for life-saving applications Nanotechnology 31 (46), 46LT02 (2020)

73. Sudipta Mukherjee et al Enhancing Efficiency of PMA Standard Wireless Mobile Charging System in Automobiles by incorporating state-of-the-art Wide Bandgap Switch IEEE PES/IAS PowerAfrica, 1-5 (2020)

72. P C Pan et al Effect of Thermal Management on the Performance of VCSELs IEEE Transactions on Electron Devices 67 (9), 3736-3739 (2020)

71. Swagata Bhunia et al Decomposition resilience of GaN nanowires, crested and surficially passivated by AlN Crystal Growth & Design 20 (8), 4867-4874 (2020)

70. Sudipta Mukharjee et al Variation of the efficiency of GaN junctionless FinFET based boost converter with subthreshold swing as a unified device parameter 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) pp. 1-4 (2020)

69.V S Santhosh N Varma Bellamkonda et al Study of surface over-layer contribution to Dislocation Assisted Tunneling current: Strategy to improve Pt/n+–GaN Schottky characteristics Mater. Res. Express 6 105917 (2019)

68. Mihir Date et al Efficient ab initio plus analytic calculation of the effect of GaN layer tensile strain in AlGaN/GaN heterostructures Jpn. J. Appl. Phys. 58 094001 (2019)

67. Jaswant S. Rathore et al Self-Assembled Sn Nanocrystals as the Floating Gate of Nonvolatile Flash Memory ACS Applied Electronic Materials 1 (9), 1852-1858 (2019)

66. Nikhilendu Tiwari et al Critical analysis of micro-thermogravimetry of CuSO4· 5H2O crystals using heatable microcantilevers J. Micromech. Microeng. 29, 105009 (2019)

65. Sudipta Mukherjee et al Temperature Dependent Variability Analysis of Threshold Voltage and On-Current for Optimum Switching Performance by Gallium Nitride-based Junctionless FinFET Electron Devices Technology and Manufacturing Conference (EDTM) pp. 118-120 (2019)

64. Ravindra S. Pokharia et al Metal semiconductor metal photodiodes based on all-epitaxial Ge-on-insulator-on- Si(111), grown by molecular beam epitaxy Optical Components and Materials XVI 10914, 1091417 (2019)

63. R. Sarkar et al. Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application Appl. Phys. Lett. 115, 063502 (2019)

62. J Ghosh, S Das, S Mukherjee, S Ganguly, A Laha A study of electrical characteristics of Gd2O3/GaN and Gd2O3/AlGaN/GaN MOS Heterostructures. Microelectronic Engineering, 216, (11097) 2019

61. D. Nag, T. Aggarwal, R. Sarkar, S. Bhunia, S. Ganguly,D. Saha, A. Laha Engineering V-shaped Pits in InGaN Layers Grown by PA-MBE towards Optimizing Active Region of Green LEDs. The Journal of the Optical Society of America B, 36, 616 (2019)

60. S Bhunia, R Sarkar, D Nag, K Ghosh, KR Khiangte, S Mahapatra, A Laha Engineering decomposition-resilience and de-coalescence of GaN nanowire ensembles arXiv preprint arXiv:1812.02443

59. R Sarkar, K Ghosh, S Bhunia, D Nag, K Khiangte, A Laha Triaxially uniform high-quality AlxGa(1-x)N (x∽50%) nanowires on template free sapphire substrate Nanotechnology 30, 065603(2019).

58. J Ghosh, D Saha, S Ganguly, A Laha, Charge density and bare surface barrier height in GaN/AlGaN/GaN heterostructures: A modeling and simulation study International Journal of RF and Microwave Computer‐Aided Engineering 28, e2145528 (2018).

57. KR Khiangte, JS Rathore, V Sharma, A Laha, S Mahapatra Engineering strain relaxation of GeSn epilayers on Ge/Si (001) substrates Solid State Communications 284, 88-92 (2018)

56. B. Pal, B. P Joshi, H. Chakraborti, A. K Jain, B. K Barick, K. Ghosh, A. Laha, S. Dhar, K. Das Gupta; Superconductivity in epitaxial InN thin films with large critical fields Superconductor Science and Technology 32 (1), 015009

55. KR Khiangte, JS Rathore, J Schmidt, HJ Osten, Apurba Laha, S Mahapatra Wafer-scale all-epitaxial GeSn-on-insulator on Si (111) by molecular beam epitaxy J. Phys. D: Appl. Phys. 51, 32LT01 (2018).

54. KR Khiangte, JS Rathore, S Das, RS Pokharia, J Schmidt, HJ Osten, Apurba Laha, S. Mahapatra Molecular beam epitaxy and defect structure of Ge (111)/epi-Gd2O3 (111)/Si (111) heterostructures Journal of Applied Physics, 124, 065704 (2018)

53. P. Corfdir , G. Calabrese, A. Laha, T. Auzelle, L. Geelhaar,O. Brandt, S. Fernández-Garrido, Monitoring the formation of GaN nanowires in molecular beam epitaxy by polarization-resolved optical reflectometry, CrystEngComm, 20 (23), 3202-3206 (2018).

52. K Ghosh, P Busi, S Das, J.S. Rathore, A Laha “Excimer laser annealing: An alternative route and its optimisation to effectively activate Si dopants in AlN films grown by plasma assisted molecular beam epitaxy” Materials Research Bulletin 97, 300-305 (2018).

51. K. Ghosh, R. Sarkar, S. Bhunia, and A. Laha “Effect of nitridation time on structural, optical and electrical properties of InN films grown on c-sapphire substrates by PAMBE” J Mater Sci: Mater Electron (2017). https://doi.org/10.1007/s10854-017-8332-1

50. K Ghosh, S Das, KR Khiangte, N Choudhury, A Laha “Epitaxial Gd2O3 on GaN and AlGaN: a potential candidate for metal oxide semiconductor based transistors on Si for high power application” Journal of Physics D: Applied Physics 50 (47), 475102(2017).

49. S. Das, K. R Khiangte, R. S. Fandan, J. S. Rathore, R. S. Pokharia, S. Mahapatra and A. Laha “On the correlation of growth, structural and electrical properties of epitaxial Ge grown on Si by solid source molecular beam epitaxy” Current Applied Physics 17 327 (2017).

48. K Ghosh, J. S. Rathore and A. Laha “Tuning the effective band gap and finding the optimal growth condition of InN thin films on GaN/sapphire substrates by plasma assisted molecular beam epitaxy technique” Superlattices and Microstructures 101,405-414 (2017).

47. Nikhilendu Tiwary, Ritam Sarkar, V Ramgopal Rao, Apurba Laha “CPiezoresponse force microscopy (PFM) characterization of GaN nanowires grown by Plasma assisted Molecular beam epitaxy (PA-MBE)” 2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop (ISAF/ECAPD/PFM).

46. Kankat Ghosh, Sudipta Das, Andreas Fissel, H. Jörg Osten, and Apurba Laha: “Long-Term Stability of Epitaxial (Nd1−xGdx)2O3 Thin Films Grown on Si(001) for Future CMOS Devices” IEEE TRANSACTIONS ON ELECTRON DEVICES, 63 (7), 2852 (2016).

45. Ritam Sarkar, R Fandan, Krista R Khiangte, S Chouksey, AM Josheph, S Das, S Ganguly, D Saha, Apurba Laha: “Comprehensive investigation on the correlation of growth, structural and optical properties of GaN nanowires grown on Si (111) substrates by plasma assisted molecular beam epitaxy technique” arXiv preprint arXiv:1603.08603

44. S. Manna, R. Aluguri, A. Katiyar, S. Das, A. Laha, H.J. Osten, and S. K. Ray: “MBE grown Si and Si1-xGex quantum dots embedded within epitaxial Gd2O3 on Si (111) substrate for floating gate memory device” Nanotechnology 24 (2013) 505709 “http://nanotechweb.org/cws/article/lab/55431

43. Kankat Ghosh, Sudipta Das, A. Fissel, H.J. Osten, and Apurba Laha: “Epitaxial Gd2O3 on strained Si1-xGex virtual substrate for next generation complementary metal oxide semiconductor device application” Appl. Phys. Lett. 103 (2013) 153501-1/4

42. Apurba Laha, Andreas Fissel, and H. Joerg Osten. “Effective control on flat band voltage of epitaxial lanthanide oxide based MOS capacitors by interfacial carbon” Applied Physics Letters 102 (2013) 202902-1/3

41. Ke Xu, R. Ranjith, A.P. Milanov, H. Parala, R.A. Fischer, A. Laha, E. Bugiel, J. Feydt, S. Irsen, T. Toader, C. Bock, D. Rogalla, H.J. Osten, U. Kunze, and A. Devi: “Atomic layer deposition of Gd2O3 and Dy2O3: A study on the ALD characteristics, structural and electrical properties” Chemistry of Materials 24 (2012) 651.

40. Apurba Laha, Bin Ai, P. R. P. Babu, Andreas Fissel, and H. Joerg Osten. “Impact of carbon incorporation into epitaxial Gd2O3 thin films on silicon: An experimental study on electrical properties” Applied Physics Letters 99 (2011) 152902-1/3

39. Apurba Laha, A. Fissel and H. J. Osten Effect of Ge passivation on interfacial properties of crystalline Gd2O3 thin films grown on Si substrates Applied Physics Letters 96 (2010) 072903-1/3.

38. A. P. Milanov, K. Xu, A. Laha, E. Bugiel, R. Ranjith, D. Schwendt, H. J. Osten, H. Parala, R. A. Fischer, A. Devi Growth of crystalline Gd2O3 thin films with high quality interface on Si(100) by low temperature H2O assisted atomic layer deposition J. Am. Chem. Soc. 132 (2010) 36-37.

37. A. Fissel, R. Dargis, E. Bugiel, D. Schwendt, T. Wietler, J. Krügener, A. Laha, H.J. Osten JACS Single-crystalline Si grown on single-crystalline Gd2O3 by modified solid-phase epitaxy Thin Solid Films 518 (2010) 2546-2550.

36. A. Laha, E. Bugiel, M. Jestremski, R. Ranjith, A. Fissel, and H.J. Osten, Encapsulated solid phase epitaxy of a Ge quantum well embedded in an epitaxial rare earth oxide Nanotechnology 20, (2009) 475604 (***one of the top 10 research publications in Nanotechnology during last two years, source: www.bmlsearch.com).

35. V. V. Afanas’ev, M. Badylevich, A. Stesmans, A. Laha, H.J. Osten, and A. Fissel: Size-dependent interface band alignment between Si nanocrystals and lattice-matched Gd2O3 Appl. Phys. Lett. 95 (2009)102107-1/3

34. T. F. Wietler, A. Laha, E. Bugiel, M. Czernohorsky, R. Dargis, A. Fissel, and H.J. Osten: Epitaxial growth of Gd2O3 on Ge films grown by surfactant-mediated epitaxy on Si(001) substrates Solid State Electronics 53 (2009) 833-836

33. J. Wang, A. Laha, A. Fissel, D. Schwendt, R. Dargis, T. Watahiki, R. Shayduka, W. Braun,T.M. Liu, and H. J. Osten: Crystal structure and strain state of molecular beam epitaxial grown Gd2O3 on Si(1 1 1) substrates: a diffraction study Semiconductor Science and Technology 24 (2009) 045021.

32. H.J. Osten, A. Laha, M. Czernohorsky, E. Bugiel, R. Dargis, and A. Fissel: Introducing crystalline rare-earth oxides into Si technologies physica status solidi (a) 205 (2008) 695.

31. A. Laha, E. Bugiel, H. J. Osten, and A. Fissel: Epitaxial Rare Earth Oxide Thin Film: Potential Candidate for Future Microelectronic Devices In Rare Earths: Research and Applications Editor: Keith N. Delfrey, Nova Science Publishers, Inc. 2008, pp. 301.

30. Qing-Qing Sun, A. Laha, Shi-Jin Ding, D. W. Zhang, H. J. Osten, A. Fissel: Effective Passivation of Intrinsic Dangling Bonds at the Interface of Single Crystalline Gd2O3 and Si(100) Appl. Phys. Lett. 92 (2008) 152908.

29. Qing-Qing Sun, A. Laha, Shi-Jin Ding, D. W. Zhang, H. J. Osten, and A. Fissel: Observation of near interface oxide traps in single crystalline Nd2O3 on Si(111) by quasistatic C-V method Appl. Phys. Lett. 93 (2008) 083509.

28. A. Laha, E. Bugiel, J. X. Wang, Q. Q. Sun, A. Fissel, and H. J. Osten: Effect of domain boundaries on the electrical properties of crystalline Gd2O3 thin film Appl. Phys. Lett. 93 (2008) 182907.

27. V. V. Afanas’ev, M. Badylevich, A. Stesmans, A. Laha, H. J. Osten, A. Fissel, W. Tian, L. F. Edge, and D. G. Schlom: Band offsets between Si and epitaxial rare earth sesquioxides (RE2O3, RE=La, Nd, Gd, Lu): Effect of 4f-shell occupancy Appl. Phys. Lett. 93 (2008) 192105.

26. A. Laha, D. Kühne, E. Bugiel, A. Fissel, and H. J. Osten: Embedding silicon nanoclusters into epitaxial rare earth oxide for nonvolatile memory applications Semiconductor Science and Technology 23 (2008) 085015.

25. A. Laha, A. Fissel, E. Bugiel, and H.J. Osten: Epitaxial multi-component rare earth oxide for high-K application Thin Solid Films 515 (2007) 6512.

24. A. Laha, A. Fissel, and H.J. Osten: Influence of interface layer composition on the electrical properties of epitaxial Gd2O3 thin films for high-K application Appl. Phys. Lett. 90 (2007) 113508.

23. H.J. Osten, D. Kühne, A. Laha, M. Czernohorsky, E. Bugiel, and A. Fissel: Integration of functional epitaxial oxides into silicon: From high-K application to nanostructures J. Vac. Sci & Techn. B 25 (2007) 1039.

22. A. Laha, A. Fissel, and H.J. Osten: Engineering the interface between epitaxial lanthanide oxide thin films and Si substrates: a route towards tuning the electrical properties Microelectronic Engineering 84 (2007) 2282.

21. M. Badylevich, S. Shamuilia, V. V. Afanas’ev, A. Stesmans, A. Laha, H. J. Osten, and A. Fissel: Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientations Appl. Phys. Lett. 90 (2007) 252101

20. H.J.Osten, A. Laha, , E. Bugiel, D. Schwendt, and A.Fissel Crystalline rare-earth oxides as high-κ materials for future CMOS technologies ECS Transactions 11(2007) 287-297

19. A. Laha, H.J. Osten, A. Fissel: Impact of Si substrate orientations on electrical properties of crystalline Gd2O3 thin films for high-K application Appl. Phys. Lett. 89 (2006) 143514:

18. A. Laha, E. Bugiel, H. J. Osten, A. Fissel: Crystalline ternary rare-earth oxide with capacitance equivalent thickness below 1 nm for high-K application“ Appl. Phys. Lett. 88 (2006) 172107:

17. A. Laha, S. B. Krupanidhi, A. Balamurugan, S. Rajagopalan and S. Tyagi: Dielectric phase-transition and polarization studies in stepped and compositionally graded lead magnesium niobate–lead titanate relaxor thin films J. Appl. Phys. 98 (2005) 014105

16. R. Ranjith, Apurba Laha, and S. B. Krupanidhi l: Enhanced tunability and phase transition studies in compositionally varying lead magnesium niobate–lead titanate multilayered thin films Appl. Phys. Lett. 86 (2005) 092902

15. A. R. Chaudhuri A. Laha, S.B. Krupanidhi: Enhanced ferroelectric properties of vanadium doped bismuth titanate (BTV) thin films grown by pulsed laser ablation technique, Solid State Communication, 133 (2005) 611

14. P. Venkateswarlu, A. Laha, and S. B. Krupanidhi: Dielectric Study of La doped PbTiO3 thin films grown by pulsed laser abltation technique Thin Solid Films 474 (2005)1

13. A. Laha, S. Bhattacharyya, and S. B. Krupanidhi: Impact of Microstructure on Dielectric properties of 0.7Pb(Mg1/3Nb2/3)O3 - 0.3PbTiO3 Thin Films Mat. Sci. Engg. B 106 (2004)111

12. A. Laha and S. B. Krupanidhi: Field Induced Dielectric Response of 0.7Pb(Mg1/3Nb2/3)O3 - 0.3PbTiO3 Thin Films Mat. Sci. Engg. B 113(2004)190

11. A. Laha, S. Saha and S. B. Krupanidhi,: Role of La0.5Sr0.5CoO3 template layers on dielectric and electrical properties of pulsed-laser ablated Pb(Nb2/3Mg1/3)O3 - PbTiO3 thin films Thin Solid Films, 424 (2003) 274

10. A. Laha and S. B. Krupanidhi: Dielectric Response and Impedance Spectroscopy of 0.7Pb(Mg1/3Nb2/3)O3 - 0.3PbTiO3 Thin Films Mat. Sci. Engg. B 98, 204 (2003)

9. P. Venkateswarlu, A. Laha, and S. B. Krupanidhi: Relaxor like behavior of La doped PbTiO3 thin films grown by pulsed laser ablation technique Solid State Communication, 127 (2003) 247

8. P. Venkateswarlu, A. Laha, and S. B. Krupanidhi,: Effect of AC and DC Field on the Dielectric Response of (Pb,La)TiO3 Thin Films Integrated Ferroelectrics, 52 (2003) 665

7. A. Laha, P. Victor and S. B. Krupanidhi: Study of relaxor behavior of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 thin films Integrated Ferroelectrics, 46 (2002)143

6. A. Laha and S. B. Krupanidhi: Leakage current conduction of pulsed excimer laser ablated BaBi2 Nb2 O9 thin films J. Appl. Phys. 91(2002) 415

5. S. Bhattacharyya, A. Laha, and S. B. Krupanidhi: Analysis of leakage current conduction phenomenon in SrBi2Ta2O9 films grown by excimer laser ablation J. Appl. Phys. 91 (2002) 4543

4. S. Bhattacharyya, A. Laha, P. Victor and S. B. Krupanidhi: The thickness dependence of the electrical and dielectric properties in the laser ablated SrBi2Nb2O9 thin films Integrated Ferroelectrics 50 (2002)159

3. S. Bhattacharyya, A. Laha, and S. B. Krupanidhi: Impact of Sr content on dielectric and electrical properties of pulsed laser ablated SrBi2Ta2O9 thin films J. Appl. Phys. 92 (2002) 1056

2. S. Bharadwaja, A. Laha, S. Halder and S. B. Krupanidhi: Reversible and irreversible switching processes in pure and lanthanum modified lead zirconate thin films Mat. Sci. Engg. B 94 (2002) 218

1. A. Laha and S. B. Krupanidhi: Growth and characterization of excimer laser-ablated BaBi2Nb2O9 thin films Appl. Phys. Lett. 77 (2000) 3818

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