Apurba Laha

Department of Electrical Engineering
IIT Bombay, Powai
Mumbai 400076, India
Email : laha[AT] ee.iitb.ac.in

Phone :(O) +91 22 2576 9408

     (R) +91 22 -2576 8408\\

Fax: +91 22 – 2572 3707

* Oxide based electronics: Epitaxial rare earth oxides (high-K dielectrics) on Si, Ge and SiGe substrates for gate dielectric application in next generation CMOS, oxide heterostructures.

* Si, Ge and SiGe based Nanostructure for photonics, photovoltaic, and high-density nonvolatile memory application.

* Si and Ge based magnetic semiconductors for spintronic application.

* New materials such as Graphene, SiGeC, strained Si, Ge etc. for Si based technology

* Physics of thin film growth

* Solid phase epitaxy of semiconductor and oxide materials, Encapsulated solid phase epitaxy, Molecular Beam epitaxy, Mismatch epitaxy.

• PhD (2004) (Materials Science): Indian Institute of Science, Bangalore, India
  
• MSc (1999) (Physics) Jadavpur University, Kolkata, India
  

• January 2012 – present Assistant Professor, IIT Bombay
• January 2009- December 2011 Group Leader, Institute of Electronic Materials and Devices (MBE), Leibniz University, Hannover,

Germany

• January 2007 - December 2008 Senior Research Scientist, Institute of Electronic Materials and Devices (MBE), Leibniz

University, Hannover, Germany

• May 2005 - December 2006, Alexander von Humboldt Research Fellow, Institute of Electronic Materials and Devices (MBE),

Leibniz University, Hannover, Germany.

• July 2003 – February 2005, Research Associate, Indian Institute of Science Bangalore

• Nominated among the best three researchers from Leibniz Universität Hannover for Heinz-Maier-Leibnitz-Price of German Research

Foundation (DFG)

• International Einstein Award for Scientific Achievement by International Biographical Center, Cambridge, England
• Cited in Marquis Who’s Who in Science, 2010 edition.
• Alexander von Humboldt Research Fellowship, 2005.
• Best Poster Award in the National Seminar on Ferroelectrics and Dielectrics (NSFD) 2002, Bangalore, India.
• National Talent Scholarship (1993) awarded by Govt. of West Bengal, India
• Member of editorial board, ISRN Material Science, Hindawi Publishing Corp

* Refereed Journals and Conf. Proceedings: 74, h-index: 10 (ISI web of knowledge)
* Book chapters: 2
* Invited talks: 10
* Conference contribution: 48

1. Apurba Laha, Bin Ai, P. R. P. Babu, Andreas Fissel, and H. Joerg Osten.

"Impact of carbon incorporation into epitaxial Gd2O3 thin films on silicon: An experimental study on electrical properties"
Applied Physics Letters 99 (2011) 152902-1/3 

2. Apurba Laha, A. Fissel and H. J. Osten

Effect of Ge passivation on interfacial properties of crystalline Gd2O3 thin films grown on Si substrates
Applied Physics Letters 96 (2010) 072903-1/3  
  

3. A. P. Milanov, K. Xu, A. Laha, E. Bugiel, R. Ranjith, D. Schwendt, H. J. Osten, H. Parala, R. A. Fischer, A. Devi Growth of crystalline Gd2O3 thin films with high quality interface on Si(100) by low temperature H2O assisted atomic layer deposition

J. Am. Chem. Soc. 132 (2010) 36-37.

4. A. Fissel, R. Dargis, E. Bugiel, D. Schwendt, T. Wietler, J. Krügener, A. Laha, H.J. Osten JACS Single-crystalline Si grown on single-crystalline Gd2O3 by modified solid-phase epitaxy

Thin Solid Films 518  (2010) 2546-2550.

5. A. Laha, E. Bugiel, M. Jestremski, R. Ranjith, A. Fissel, and H.J. Osten, Encapsulated solid phase epitaxy of a Ge quantum well embedded in an epitaxial rare earth oxide Nanotechnology 20, (2009) 475604 (***one of the top 10 research publications in Nanotechnology during last two years, source: www.bmlsearch.com).) 6. V. V. Afanas’ev, M. Badylevich, A. Stesmans, A. Laha, H.J. Osten, and A. Fissel: Size-dependent interface band alignment between Si nanocrystals and lattice-matched Gd2O3 Appl. Phys. Lett. 95 (2009)102107-1/3

7. T. F. Wietler, A. Laha, E. Bugiel, M. Czernohorsky, R. Dargis, A. Fissel, and H.J. Osten:

Epitaxial growth of Gd2O3 on Ge films grown by surfactant-mediated epitaxy on Si(001) substrates
Solid State Electronics 53 (2009) 833-836

8. J. Wang, A. Laha, A. Fissel, D. Schwendt, R. Dargis, T. Watahiki, R. Shayduka, W. Braun,T.M. Liu, and H. J. Osten: Crystal structure and strain state of molecular beam epitaxial grown Gd2O3 on Si(1 1 1) substrates: a diffraction study Semiconductor Science and Technology 24 (2009) 045021.

9. H.J. Osten, A. Laha, M. Czernohorsky, E. Bugiel, R. Dargis, and A. Fissel:

Introducing crystalline rare-earth oxides into Si technologies
physica status solidi (a) 205 (2008) 695.

10. A. Laha, E. Bugiel, H. J. Osten, and A. Fissel: Epitaxial Rare Earth Oxide Thin Film: Potential Candidate for Future Microelectronic Devices

In Rare Earths: Research and Applications Editor: Keith N. Delfrey, 

Nova Science Publishers, Inc. 2008, pp. 301.

11. Qing-Qing Sun, A. Laha, Shi-Jin Ding, D. W. Zhang, H. J. Osten, A. Fissel:

Effective Passivation of Intrinsic Dangling Bonds at the Interface of Single Crystalline Gd2O3 and Si(100)
Appl. Phys. Lett. 92 (2008) 152908.

12. Qing-Qing Sun, A. Laha, Shi-Jin Ding, D. W. Zhang, H. J. Osten, and A. Fissel:

Observation of near interface oxide traps in single crystalline Nd2O3 on Si(111) by quasistatic C-V method
Appl. Phys. Lett. 93 (2008) 083509.

13. A. Laha, E. Bugiel, J. X. Wang, Q. Q. Sun, A. Fissel, and H. J. Osten:

Effect of domain boundaries on the electrical properties of crystalline Gd2O3 thin film

Appl. Phys. Lett. 93 (2008) 182907.

14. V. V. Afanas’ev, M. Badylevich, A. Stesmans, A. Laha, H. J. Osten, A. Fissel, W. Tian, L. F. Edge, and D. G. Schlom:

Band offsets between Si and epitaxial rare earth sesquioxides (RE2O3, RE=La, Nd, Gd, Lu): Effect of 4f-shell occupancy
Appl. Phys. Lett. 93 (2008) 192105.

15. A. Laha, D. Kühne, E. Bugiel, A. Fissel, and H. J. Osten:

Embedding silicon nanoclusters into epitaxial rare earth oxide for nonvolatile memory applications 
Semiconductor Science and Technology 23 (2008) 085015.

16. A. Laha, A. Fissel, E. Bugiel, and H.J. Osten:

Epitaxial multi-component rare earth oxide for high-K application
Thin Solid Films 515 (2007) 6512.

17. A. Laha, A. Fissel, and H.J. Osten: Influence of interface layer composition on the electrical properties of epitaxial Gd2O3 thin films for high-K application Appl. Phys. Lett. 90 (2007) 113508.

18. H.J. Osten, D. Kühne, A. Laha, M. Czernohorsky, E. Bugiel, and A. Fissel:

Integration of functional epitaxial oxides into silicon: From high-K application to nanostructures
J. Vac. Sci & Techn. B 25 (2007) 1039.

19. A. Laha, A. Fissel, and H.J. Osten:

Engineering the interface between epitaxial lanthanide oxide thin films and Si substrates: a route towards tuning the electrical properties
Microelectronic Engineering 84 (2007) 2282.

20. M. Badylevich, S. Shamuilia, V. V. Afanas’ev, A. Stesmans, A. Laha, H. J. Osten, and A. Fissel:

Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientations
Appl. Phys. Lett.  90 (2007) 252101

21. H.J.Osten, A. Laha, , E. Bugiel, D. Schwendt, and A.Fissel

Crystalline rare-earth oxides as high-κ materials for future CMOS technologies
      ECS Transactions 11(2007) 287-297 
                                                        

22. A. Laha, H.J. Osten, A. Fissel:

Impact of Si substrate orientations on electrical properties of crystalline Gd2O3 thin films for high-K application
Appl. Phys. Lett. 89 (2006) 143514:

23. A. Laha, E. Bugiel, H. J. Osten, A. Fissel:

Crystalline ternary rare-earth oxide with capacitance equivalent thickness below 1 nm for high-K application"	
Appl. Phys. Lett. 88 (2006) 172107:

24. A. Laha, S. B. Krupanidhi, A. Balamurugan, S. Rajagopalan and S. Tyagi:

Dielectric phase-transition and polarization studies in stepped and compositionally graded lead magnesium niobate–lead titanate relaxor thin films
J. Appl. Phys. 98 (2005) 014105 
     

25. R. Ranjith, Apurba Laha, and S. B. Krupanidhi l:

Enhanced tunability and phase transition studies in compositionally varying lead magnesium niobate–lead titanate multilayered thin films
Appl. Phys. Lett. 86 (2005) 092902 

26. A. R. Chaudhuri A. Laha, S.B. Krupanidhi:

Enhanced ferroelectric properties of vanadium doped bismuth titanate (BTV) thin films grown by pulsed laser ablation technique,
Solid State Communication, 133 (2005) 611 

27. P. Venkateswarlu, A. Laha, and S. B. Krupanidhi:

Dielectric Study of La doped PbTiO3 thin films grown by pulsed laser abltation technique
Thin Solid Films 474 (2005)1

28. A. Laha, S. Bhattacharyya, and S. B. Krupanidhi:

Impact of Microstructure on Dielectric properties of 0.7Pb(Mg1/3Nb2/3)O3 - 0.3PbTiO3 Thin Films
Mat. Sci. Engg. B 106 (2004)111

29. A. Laha and S. B. Krupanidhi:

Field Induced Dielectric Response of 0.7Pb(Mg1/3Nb2/3)O3 - 0.3PbTiO3  Thin Films
     Mat. Sci. Engg. B 113(2004)190 

30. A. Laha, S. Saha and S. B. Krupanidhi,:

Role of La0.5Sr0.5CoO3 template layers on dielectric and electrical properties of pulsed-laser ablated Pb(Nb2/3Mg1/3)O3 - PbTiO3 thin films
Thin Solid Films, 424 (2003) 274 

31. A. Laha and S. B. Krupanidhi:

Dielectric Response and Impedance Spectroscopy of 0.7Pb(Mg1/3Nb2/3)O3 - 0.3PbTiO3  Thin Films
Mat. Sci. Engg. B 98, 204 (2003)

32. P. Venkateswarlu, A. Laha, and S. B. Krupanidhi:

Relaxor like behavior of La doped PbTiO3 thin films grown by pulsed laser ablation technique
Solid State Communication, 127 (2003) 247 

33. P. Venkateswarlu, A. Laha, and S. B. Krupanidhi,:

Effect of AC and DC Field on the Dielectric Response of (Pb,La)TiO3 Thin Films
Integrated Ferroelectrics, 52 (2003) 665 

34. A. Laha, P. Victor and S. B. Krupanidhi:

Study of relaxor behavior of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3  thin films
Integrated Ferroelectrics, 46 (2002)143 

35. A. Laha and S. B. Krupanidhi:

Leakage current conduction of pulsed excimer laser ablated BaBi2 Nb2 O9 thin films
     J. Appl. Phys.  91(2002) 415 

36. S. Bhattacharyya, A. Laha, and S. B. Krupanidhi:

Analysis of leakage current conduction phenomenon in SrBi2Ta2O9 films grown by excimer laser ablation
J. Appl. Phys. 91 (2002) 4543 

37. S. Bhattacharyya, A. Laha, P. Victor and S. B. Krupanidhi:

The thickness dependence of the electrical and dielectric properties in the laser ablated SrBi2Nb2O9 thin films
Integrated Ferroelectrics 50 (2002)159 

38. S. Bhattacharyya, A. Laha, and S. B. Krupanidhi:

Impact of Sr content on dielectric and electrical properties of pulsed laser ablated SrBi2Ta2O9 thin films
J. Appl. Phys. 92 (2002) 1056 

39. S. Bharadwaja, A. Laha, S. Halder and S. B. Krupanidhi:

Reversible and irreversible switching processes in pure and lanthanum modified lead zirconate thin films
Mat. Sci. Engg. B 94 (2002) 218 

40. A. Laha and S. B. Krupanidhi:

Growth and characterization of excimer laser-ablated BaBi2Nb2O9 thin films
Appl. Phys. Lett. 77 (2000) 3818