A. B. Sachid, P. Paliwal, S. Joshi, M. Shojaei Baghini, D. K. Sharma, V. Ramgopal Rao, “Circuit Optimization at 22nm Technology Node”, Proc. of IEEE Int. Conf. on VLSI Design 2012 (Sister Conf. of IEEE DAC), India.
N. A Gilda, S. Surya, S. Joshi, V. Thaker, M. Shojaei Baghini, D. K.Sharma, V.Ramgopal Rao, “A Low-Cost, Ultra Sensitive Hand-Held System for Explosive Detection using Piezo-Resistive Micro-Cantilevers”, Proc. of ISOCC 2011, South Korea (Invited Paper) .
M. Shojaei Baghini, “Moving Towards 22 nm Node - I/O and ESD Performance”, Tutorial, IEEE International Conf. on VLSI Design 2011 (Sister Conf. of IEEE DAC), India. (Acknowledgment: Mayank Shrivastava, H. Gossner, S. Bychikhin, V. Ramgopal Rao, D. K. Sharma).
Y. D. Rawal, M. Shojaei Baghini, S. Ganguly, “Fabrication & Characterization of MIM Tunnel Diodes”, BangaloreNano 2010, India.
M. Shrivastava, H. Gossner, M. Shojaei Baghini, V. Ramgopal Rao, “3D TCAD Based Approach for the Evaluation of Nanoscale Devices During ESD Failure”, Proc. of ISOCC 2010, South Korea (Invited Paper) .
A. B. Sachid, M. Shojaei Baghini, D. K. Sharma, V. Ramgopal Rao, “Alternate Scaling Strategies for Multi-Gate FETs for High-Performance and Low-Power Applications”, Proc. of ISOCC 2010, South Korea (Invited Paper) .
M. Shrivastava, H. Gossner, M. Shojaei Baghini, V. Ramgopal Rao, “On the Transient Behavior of Various Drain Extended MOS Devices under the ESD stress condition”, Proc. of ISOCC 2010, South Korea (Invited Paper) .
S. Prajapati, R.A.Thakker, M. Shojaei Baghini, M.B.Patil, “Performance Evaluation of FinFET and Planar MOSFET Devices at Circuit Level for 45nm Technology”, Proc. of IEEE/VSI VDAT Symposium 2010, India.
M. Shrivastava, J. Schneider, M. Shojaei Baghini, H. Gossner, V. Ramgopal Rao, “On the failure mechanism and current instabilities in RESURF type DeNMOS device under ESD conditions”, Proc. of IEEE IRPS 2010, USA.
M. Shrivastava, S. Bychikhin, D. Pogany, J. Schneider, M. Shojaei Baghini, H. Gossner, E. Gornik, V. Ramgopal Rao, “On the differences between 3D filamentation and failure of n & p type drain extended MOS devices under ESD condition”, Proc. of IEEE IRPS 2010, USA.
A. B. Sachid, R. A. Thakker, C. Sathe, M. Shojaei Baghini, D. K. Sharma, V. R. Rao, M. B. Patil, “Auto-BET-AMS: An Automated Device and Circuit Optimization Platform to Benchmark Emerging Technologies for Performance and Variability using an Analog and Mixed-Signal Design Framework”, Proc. of IEEE ISQED 2010, USA.
M. Shrivastava, B. Verma, M. Shojaei Baghini, C. Russ, D. K. Sharma, H. Gossner, V. R. Rao, “Benchmarking The Device Performance at Sub 22 nm Node Technologies Using an SoC Framework”, Proc. of IEEE IEDM 2009, USA.
M. Shrivastava, S. Bychikhin, D. Pogany, J. Schneider, M. Shojaei Baghini, H. Gossner, E. Gornik, V. R. Rao, “Filament Study of STI Type Drain Extended NMOS Device Using Transient Interferometric Mapping”, Proc. of IEEE IEDM 2009, USA.
M. Shrivastava, J. Schneider, R. Jain, M. Shojaei Baghini, H. Gossner, V. R. Rao, “IGBT plugged in SCR device for ESD protection in advanced CMOS technology”, Proc. of EOS/ESD Symposium 2009, USA.
M. Shrivastava, J. Schneider, M. Shojaei Baghini, H. Gossner, V. R. Rao, Highly resistive body STI-n-DeMOS: An optimized DeMOS device to achieve moving current filaments for robust ESD protection”, Proc. of IEEE IRPS 2009, Canada.
M. Shrivastava, J. Schneider, M. Shojaei Baghini, H. Gossner, V. R. Rao, “A New Physical Insight and 3D Device Modeling of STI Type DeNMOS Device Failure under ESD Conditions”, Proc. of IEEE IRPS 2009, Canada.
R. R. Navan, H. N. Raval, M. A. Khaderbad, M. Shojaei Baghini and V. Ramgopal Rao, “Low Voltage Patterned Gate Pentacene Organic Circuits with Hafnium oxide High-K Gate Dielectric”, OSC 2009, UK.
R. R. Navan, K. Prashanthi, A. Rajoriya, M. Shojaei Baghini, V. R. Palkar, V. R. Rao, “A Novel High-K (K > 40) Gate Dielectric for Pentacene Organic Thin Film Transistors”, Proc. of ICCE-17 2009, USA.
A. B. Sachid, G. S. Kulkarni, M. Shojaei Baghini, D. K. Sharma, V. R. Rao, “Highly Robust Nanoscale Planar Double-Gate MOSFET Device and SRAM Cell Immune to Gate-Misalignment and Process Variations”, Proc. of IEEE IEDST 2009, India.
R. R. Navan, R. A. Thakker, S. P. Tiwari, M. Shojaei Baghini, M. B. Patil, S. G. Mhaisalkar, V. R. Rao,
“DC & Transient Circuit Simulation Methodologies for Organic Electronics”, Proc. of IEEE IEDST 2009, India.
A. B. Sachid, R. Francis, M.Shojaei Baghini, D.K. Sharma, Karl-Heinz Bach, R. Mahnkopf, V. R. Rao, “Sub-20 nm gate length FinFET design: Can high-κ spacers make a difference?”, Proc. of IEEE IEDM 2008, USA.
A. B. Sachid, M. Shrivastava, R. A. Thakker, M. Shojaei Baghini, D. K. Sharma, M.B.Patil, V. R. Rao, “Technology-Aware Design (TAD) for Sub-45nm CMOS Technologies”, Intel Corporation AAF 2008, Taiwan (received the best research paper award in circuit design category) .
M. Shojaei Baghini, M. P. Desai, “Impact of technology scaling on metastability performance of of CMOS synchronizing latches”, Proc. of IEEE International Conf. on VLSI Design 2002 (Sister Conf. of IEEE DAC), India.
N. K. Jha, M. Shojaei Baghini, V. R. Rao, “Performance and reliability of single pocket deep submicron MOSFETs for analog applications”, Proc. of ISPFAIC 2002, Singapore.
M. Dave, M. Shojaei baghini, D. K. Sharma, “A Novel Robust Signaling Scheme for High-Speed Low-Power Communication over Long Wires”, Accepted in IEEE ISQED , 2012, USA.
M. Dave, M. Shojaei baghini, D. K. Sharma, “High-Speed Low-Power Robust Signaling for On-chip Long Wires”, Accepted in IEEE ISSCC Student Research Preview, 2012, USA.
M. Arrawatia, V. Diddi, H. Kochar, M. Shojaei Baghini, Girish Kumar, “An Integrated CMOS RF Energy Harvester with Differential Microstrip Antenna and On-Chip Charger”, Proc. of IEEE Int. Conf. on VLSI Design 2012 (Sister Conf. of DAC), India.
P. Kabara, S. Thakur, G. Saileshwar, M. Shojaei Baghini, D. K. Sharma, “CMOS Low-Noise Signal Conditioning with a Novel Differential “Resistance to Frequency” Converter for Resistive Sensor Applications”, Proc. of IEEE ISOCC 2011, South Korea.
S. Joshi, V. Thaker, M. Shojaei Baghini, “Versatile Ultra Low Noise, Low Power Analog Signal Conditioning Chip With Integrated Drivers”, Proc. of IEEE ISIC (one of finalist teams in international chip design competition in ISIC), 2011, Singapore.
V. Hande, M. Shojaei baghini, P. R. Apte, “Design and Optimization of High Precision CMOS Voltage Reference Using Taguchi Orthogonal Array Technique”, Proc. of IEEE ISIC, 2011, Singapore.
H. Joshi, M. Shojaei Baghini, “Versatile Battery Chargers for New Age Batteries”, Proc. of IEEE ISED 2011, India.
N. A. Gilda, S. Patil, Seena V, S. Joshi, V. Thaker, S. Thakur, Anvesha A, M. Shojaei Baghini, D. K. Sharma, V. Ramgopal Rao, “Piezoresistive 6-MNA Coated Microcantilevers with Signal Conditioning Circuits for Electronic Nose”, Proc. of IEEE A-SSCC (Sister conference of IEEE ISSCC), 2011, South Korea.
A. Vishnani, M. V. Dave, M. Shojaei Baghini and D. K. Sharma, “A Fully On-Chip Throughput Measurement System for Multi-Gigabits/s On-Chip Interconnects”, Proc. of IEEE ASQED 2011, Malaysia.
A. Vishnani, M. V. Dave, M. Shojaei Baghini and D. K. Sharma, “On-Chip Test Circuits for Throughput Measurement of high-speed Interconnects”, Proc. of VDAT 2011, India.
N. K. Kancharapu, M. V. Dave, M. Shojaei Baghini and D. K. Sharma, “A Low-Power Low-Skew Current-Mode Clock Distribution Network in 90nm CMOS Technology”, Proc. of IEEE ISVLSI (received the best paper award) 2011, India.
S. Sant, S. Waikar, M. V. Dave, M. Shojaei Baghini and D. K. Sharma, “A 16-Gb/s 9mW Transmitter With FFE in 90nm CMOS Technology for Off-Chip Communication”, Proc. of IEEE ISVLSI 2011, India.
M. Arrawatia, M. Shojaei Baghini, Girish Kumar, “RF Energy Harvesting System From Cell Towers in 900MHz Band”, NCC 2011, India.
M. Arrawatia, M. Shojaei Baghini, Girish Kumar, “RF Energy Harvesting System at 2.67GHz and 5.8GHz”, Proc. of APMC 2010, Japan.
M. V. Dave, M. Jain, R. Satkuri, M. Shojaei Baghini, D. K. Sharma, “Energy Efficient Current-Mode Signaling Scheme”, Proc. of IEEE A-SSCC (Sister conference of IEEE ISSCC), 2010, China.
S. K. Gowdhaman, M. Shojaei Baghini, “6-Bit Low-Power Subranging-ADC with Increased Throughput”, Proc. of IEEE MWSCAS 2010, USA.
M. V. Dave, R. Satkuri, M. Jain, M. Shojaei Baghini, D. K. Sharma, “Low-Power Current-Mode Transceiver for On-chip Bidirectional Buses”, Proc. of ACM/IEEE ISLPED 2010, USA.
S. P. Noolu, M. Shojaei Baghini, V. Rajbabu, “Efficient Analog Architectures for DCT Processing”, Proc. of NASA/ESA AHS 2010, USA.
V. G. Hande, M. Shojaei Baghini, “An Ultra Low-Energy DAC for Successive Approximation ADCs”, Proc. of IEEE ISCAS 2010, France.
M. V. Dave, M. Shojaei Baghini, D. K. Sharma, “A Process Variation Tolerant, High-Speed and Low-Power Current Mode Signaling Scheme for On-chip Interconnects”, Proc. of ACM/IEEE GLSVSLI, 2009, USA.
S. R. Krishna, M. Shojaei Baghini, J. Mukherjee, “Current-Mode CMOS Pipelined ADC”, Proc. of IEEE Eurocon 2009, Russia.
K. Bhattacharyya, J. Mukherjee, M. Shojaei Baghini, “27.1GHz CMOS Distributed Voltage Controlled Oscillators With Body Bias for Frequency Tuning of 1.28GHz”, IEEE MWSCAS 2009, Mexico.
J. Mukherjee, M. Shojaei Baghini, M. Johnson, “Phase Noise Reduction in Quadrature LC Oscillators Using Inverter-Based Tail Noise Shaping”, Proc. of IEEE NEWCAS and TAISA, 2009, France.
K. Bhattacharyya, J. Mukherjee, M. Shojaei Baghini, “Effects of Substrate Bias on Noise of 0.18µm CMOS Devices at Microwave Frequency”, IWPSD 2009, India.
K. Bhattacharyya, J. Mukherjee, M. Shojaei Baghini, “20GHz CMOS Distributed Voltage Controlled Oscillators With Frequency Tuning By MOS Varactors”, Proc. of IEEE IEDST 2009, India.
M. V. Dave, M. Shojaei Baghini, D. K. Sharma, “Low-power current-mode receiver with inductive input impedance”, Proc. of ACM/IEEE ISLPED 2008, India.
R. Satkuri, M. V. Dave, M. Shojaei Baghini, D. K. Sharma, “On-chip Test Circuits for Fast Interconnects”, Proc. of IEEE VDAT 2008, India.
J. Mukherjee, Young-Gi Kim, I. Suh, P. Roblin, Wan-Rone Liou, Yao-Chian Lin, M. Shojaei Baghini “Microstrip Equivalent Parasitic Modeling of RFIC Interconnects”, Proc. of IEEE MWSCAS 2007, Canada.
R. D. Kanphade, M. Shojaei Baghini, D. G. Wakade, M. Chhangani, M. Patil, S. M. Ranjan, J. R. Verma, N. K. Ingole, P. Gawande, “Design of low power FPAA in 0.35u CMOS Process”, Accepted in IASTED ICCSS 2006, USA.
M. Shojaei Baghini, R. K. Lal, D. K. Sharma, “A Low-Power and Compact Analog CMOS Processing Chip for Portable ECG Recorders”, Proc. of IEEE A-SSCC 2005 (Sister Conf. of IEEE ISSCC), Taiwan.
M. Shojaei Baghini, R. K. Lal, D. K. Sharma, “An ultra low-power instrumentation amplifier for biomedical applications”, Proc. of IEEE BioCAS 2004, Singapore.
V. M. Tousi, F. Sahandi, M. Atarodi, M. Shojaei Baghini, “A 3.3V / 1W class D audio power amplifier with 103 dB DR and 90% efficiency”, Proc. of MIEL 2002, Yugoslavia.