Swaroop Ganguly

• Spintronic device modeling and fabrication
• Modeling of novel transistor structures
• III-N device modeling and fabrication
• Modeling of novel solar cell structures

• Ph.D. (2005) University of Texas at Austin
• MSE (2001) University of Texas at Austin
• B.Tech. (1999) IIT Kharagpur

• Assistant Professor, IIT Bombay, Jul 2009 - present
• Visiting Scientist, IBM T.J. Watson Research Center, May 2010 - July 2010
• Post-doctoral Fellow, University of Texas at Austin, Aug 2008 - Jul 2009
• Research Scientist, Tokyo Electron Limited, Feb 2006 - Jul 2008 (assigned to IMEC Jul 2006 - Jul 2008)
• Design Services Engineer, Freescale Semiconductor (earlier Motorola SPS), May 2005 - Feb 2006 (summer intern in 2002, 2003, 2004)

Department of Electrical Engineering
IIT Bombay, Powai
Mumbai 400 076, India
Email : sganguly[AT]ee.iitb.ac.in
Phone (Office) : +91 22 2576 7403
Phone (Mobile) : +91 976 959 7403
Office room no: Electrical Engineering Annex 106
Fax: +91 22 2572 3707

Tarkeshwar Patil, Nakul Pande, Rama Bhadra Adari, Praveen Suggisetti, Neha Raorane, Swaroop Ganguly, Rabah W. Aldhaheri, Mohammad A. Hussain, and Dipankar Saha, “Cl2/Ar Based Dry Etching of GaCrN using Inductively Coupled Plasma”, Journal of Nanoelectronics and Optoelectronics 7, 1 (2012).

Suresh Gundapaneni, Mohit Bajaj, Rajan K. Pandey, Kota V. R. M. Murali, Swaroop Ganguly and Anil Kottantharayil, “Effect of Band-to-Band Tunneling on Junctionless Transistors”, accepted in IEEE Transactions on Electron Devices 59, 1023 (2012).

Yaksh Rawal, Maryam Shojaei Baghini, and Swaroop Ganguly “Fabrication and characterization of new Ti-TiO2-Al and Ti-TiO2-Pt tunnel diodes”, accepted in Active and Passive Electronic Components, 694105 (2012).

D.A. Ferrer, S. Guchhait, H. Liu, F. Ferdousi, C. Corbet, H. Xu, M. Doczy, G. Bourianoff, L. Mathew, R. Rao, S. Saha, M. Ramon, S. Ganguly, J.T. Markert and S.K. Banerjee, “Origin of shape anisotropy effects in solution-phase synthesized FePt nanomagnets”, J. Appl. Phys. 110, 014316 (2011).

S. Gundapaneni. S. Ganguly, and A. Kottantharayil, “Enhanced electrostatic integrity of short-channel junctionless transistor with high-k spacer”, IEEE Elec. Dev. Lett. 32, 1325 (2011).

S. Gundapaneni, S. Ganguly, W. Van Roy, S. Kaushal and K. Sugishima, “Effect of sputtering on ferromagnet-oxide-silicon spin injection contacts”, J. Vac. Sc. & Tech. B 29, 040602 (2011); JVSTB top-downloaded: http://avspublications.org/jvstb/top_20_most_downloaded?month=9&year=2011 http://avspublications.org/jvstb/top_20_most_downloaded?month=7&year=2011

S. Gundapaneni. S. Ganguly, and A. Kottantharayil, “Bulk Planar Junctionless Transistor (BPJLT): An attractive device alternative for scaling”, IEEE Elec. Dev. Lett. 32, 261 (2011); Synopsys Newsletter: http://www.synopsys.com/Community/Universityprogram/pages/NewsletterJul11.aspx

D. Banerjee, R. Adari, M. Murthy, S.Ganguly, and D. Saha, “Modulation bandwidth of a spin laser”, J. Appl. Phys. 109, 07C317 (2011).

R. Adari, T. Patil, S. Murthy, S. Ganguly, and D. Saha, “Enhanced magnetoresistance in lateral spin-valves”, Appl. Phys. Lett. 97, 112505 (2010).

Swaroop Ganguly, L.F.Register, A.H.MacDonald and S.K.Banerjee, “Scattering Dependence of Magnetization Switching in Ferromagnetic Resonant Tunneling Diodes”, Phys. Rev. B 74, 153314 (2006); VJ Nano. Sci. Tech.

Swaroop Ganguly, L.F.Register, A.H.MacDonald, S.K.Banerjee, “Two-level Voltage Controlled Magnetization Switch Using a Ferromagnetic Semiconductor Resonant-tunneling Diode”, IEEE Trans. Nanotech. 5 (1), 30,(2006).

Swaroop Ganguly, S.Banerjee, L.F.Register and A.H.MacDonald, “Intrinsic Curie Temperature Bistability in Ferromagnetic Resonant Tunneling Diodes”, Phys. Rev. B. 73, 033310 (2005); VJ Nano. Sci. Tech.

Swaroop Ganguly, S.Banerjee, L.F.Register and A.H.MacDonald, “Bias Voltage Controlled Magnetization Switch in Ferromagnetic Semiconductor Resonant Tunneling Diodes”, Phys. Rev. B. 71, 245306 (2005); VJ Nano. Sci. Tech.

Swaroop Ganguly, Li Lin, Puneet Kohli, Hong-Jyh Li, Taras Kirichenko, Raghu Srinivasa, Vikas Agarwal, Sanjay Banerjee, “Comparison of Low Energy BF2, BCl2 and BBr2 Implants for the Fabrication of Ultrashallow P+/N Junctions”, Journal of Applied Physics, 91(4), 2023, (2002).

P.Kohli, S.Ganguly, T.Kirichenko, H-J.Li, S.Banerjee, E.Graetz, M.Shevelev, “Microwave Annealing for Ultra-shallow Junction Formation”, Journal of Electronic Materials, 31(3), 214, (2002).

HJ.Li, P.Kohli, S.Ganguly, T.Kirichenko, S.Banerjee, P.Zeitzoff, “B diffusion in Si in presence of other species”, Applied Physics Letters 77(17), 2683, (2000).

Debashree Banerjee, Swaroop Ganguly and Dipankar Saha, “Effect of Device Geometry on Output Circular Polarization in a Spin-LED”, International Magnetics Conference, Vancouver, May 2012.

Tarkeshwar Patil, Nakul Pande, Rama Bhadra Adari, Praveen Suggisetti, Neha Raorane, Swaroop Ganguly, Rabah W. Aldhaheri, Mohammad A. Hussain, and Dipankar Saha, “Cl2/Ar Based Dry Etching of GaCrN using Inductively Coupled Plasma”, AMEE International Workshop on Nanoelectronics and Optoelectronics, Hong Kong, January 2012.

Suresh Gundapaneni, Swaroop Ganguly and Anil Kottantharayil, “Effect of Quantum Confinement on the Performance of the Junctionless Transistor”, International Semiconductor Device Research Symposium, College Park, December 2011.

Anil Kottantharayil, Swaroop Ganguly and Suresh Gundapaneni, “Junctionless Field Effect Transistor: Challenges and Prospects in the Deca Nanometer Regime”, XVI International Workshop on the Physics of Semiconductor Devices, Kanpur, December 2011 (invited).

A. Kamath, T. Patil, I. Bhattacharya, R. Adari, S. Ganguly and D. Saha, “GaN High Electron Mobility Transistors”, XVI International Workshop on the Physics of Semiconductor Devices, Kanpur, December 2011 (invited).

T. Patil, N. Pande, R. Adari, P. Suggisetti, S. Subramanian, S. Ganguly and D. Saha, “Dry Etching of GaCrN using Inductively Coupled Cl2 /Ar Chemistry”, XVI International Workshop on the Physics of Semiconductor Devices, Kanpur, December 2011.

Praveen Suggisetti, Tarkeshwar Patil, Ramabhadra Rao Adari, Debashree Banerjee, Tanmoy Pramanik, Dipankar Saha and Swaroop Ganguly, “A homogeneous ferromagnetic semiconductor above room-temperature: Cr-doped GaN”, XVI International Workshop on the Physics of Semiconductor Devices, Kanpur, December 2011.

R. Adari, B. Sarkar, D. Banerjee, P. Suggisetti, T. Patil, S. Ganguly and D. Saha, “Electrical Characterization of Co/n-GaN Schottky Diodes” XVI International Workshop on the Physics of Semiconductor Devices, Kanpur, December 2011.

D. Banerjee, T. Pramanik, R. Adari, T. Patil, P. Suggisetti, S. Ganguly and D. Saha, “Effect of drift on spin polarization in a spin-LED”, 56th Annual Conference on Magnetism and Magnetic Materials, Scottsdale, November 2011.

P. Suggisetti, T. Patil, R. Adari, D. Banerjee, T. Pramanik, D. Saha and S. Ganguly, “Room-temperature ferromagnetism in homogeneous Cr-doped GaN”, 56th Annual Conference on Magnetism and Magnetic Materials, Scottsdale, November 2011.

R. Adari, B. Sarkar, T. Patil, D. Banerjee, P. Suggisetti, S. Ganguly, and D. Saha, “Temperature dependent characteristics of Fe/n-GaN Schottky diodes”, International Conference on Solid State Devices and Materials, Nagoya, September 2011.

R. Adari, M. Murthy, T. Patil, R. Maheshwari, G. Vaidya, S. Ganguly, and D. Saha, “Geometric Enhancement of Spin Injection and Detection in Semiconductors for High-Temperature Operation”, 55th Annual Conference on Magnetism and Magnetic Materials, Atlanta, November 2010.

D. Banerjee, R. Adari, M. Murthy, P. Suggisetti, S. Ganguly and D. Saha, “Modulation bandwidth of a spin laser”, 55th Annual Conference on Magnetism and Magnetic Materials, Atlanta, November 2010.

S. Ganguly, D. Saha et al., “Computational Nanoelectronics”, Workshop of High-Performance Computing, Bangalore, September 2010 (invited).

S. Ganguly, D. Saha et al., “Logic beyond CMOS – the promise of spintronics”, IUMRS-ICEM, Seoul, South Korea, August 2010 (invited)

R.B.R. Adari, M.S. Murthy, S. Ganguly and D. Saha, “Amplification of Optical Polarization in a Spin Laser”, 3rd International Conference on Spintronics Materials and Technology, Urbana, June 2010.

S. Ganguly, W. Van Roy, R. Lieten, R. Jansen, S. Kaushal and K. Sugishima, “Source/drain contact engineering for silicon/germanium spin transistors”, International Workshop on the Physics of Semiconductor Devices, New Delhi, December 2009.

S. Ganguly, “Voltage-controlled magnetization switching in ferromagnetic resonant tunneling diodes”, DAE Theme Meeting on Quantum Structures, Mumbai, November 2009 (invited).

S. Ganguly, W. Van Roy, R. Lieten, R. Jansen, S. Kaushal and K. Sugishima, “Engineering Optimal Spin Injection/Detection Contacts on Silicon and Germanium”, Nanotech Conference and Expo, Houston, May 2009.

W. Van Roy, P-J. Vandormael, P. Van Dorpe, R. Vanheertum, S. Ganguly, and G. Borghs, “Self-consistent Treatment of a Semiconductor between Magnetic Source and Drain”, Spintech IV, Maui, June 2007.

Swaroop Ganguly, L.F. Register, A.H. MacDonald, and S.K. Banerjee, “Scattering Dependence of Magnetization Switching in Ferromagnetic Resonant Tunneling Diodes”, European Materials Research Society Fall Meeting, Warsaw, September 2006.

Swaroop Ganguly, S. Banerjee, L.F. Register and A.H. MacDonald, “Bias Controlled Magnetization Switch in a Magnetic Semiconductor Resonant-tunneling Diode”, Nanoscale Devices and Systems Integration, Houston, April2005.

Hong-Jyh Li, Taras A. Kirichenko, Swaroop Ganguly, Puneet Kohli, Sanjay Banerjee, David Sing, Peter Zeitzoff, Kenneth Torres, Steve McCoy, Kiefer Elliot, “A Study of Ultra-high Ramp Rate Thermal Annealing”, ECS International Semiconductor Technology Conference, Shanghai, China, May 2001.

Hong-Jyh Li, Taras A. Kirichenko, Swaroop Ganguly, Puneet Kohli, Sanjay Banerjee, David Sing, Peter Zeitzoff, Kenneth Torres, Steve McCoy, Kiefer Elliot, “A Study of Rapid Thermal Annealing of Shallow BF2 Implants”, Ultra Shallow Junctions, Napa CA, April 2001.

Hong-Jyh Li, Puneet Kohli, Swaroop Ganguly, Taras A. Kirichenko, Peter Zeitzoff, Kenneth Torres, and S.Banerjee, “Boron Diffusion and Activation in the presence of other species”, International Conference on Computational Nanoscience and Nanotech., South Carolina, March 2001.

P.Kohli, S.Ganguly, T.Kirichenko, H-J.Li, S.K.Banerjee, E.Graetz, M.Shevelev, “Microwave Annealing of P/N Ultra Shallow Junctions”, USJ Workshop 2001.

Hong-Jyh Li, Puneet Kohli, Swaroop Ganguly, Taras A. Kirichenko, Peter Zeitzoff, Kenneth Torres, and S.Banerjee, “Boron Diffusion and Activation in the presence of other species”, IEDM Tech. Digest, 515, Dec 2000, San Francisco.

S.Banerjee, P.Kohli, H.Li, T.Kirichenko, and S.Ganguly, “High Ramp Rate Rapid Thermal Annealing for Ultrashallow Junctions”, Invited paper, Electrochem. Soc. Proc., Toronto, 2000.

Double-channel High Electron Mobility Transistor with Back-barrier (pending).

US 7342244 (2008), WO 2008/111911, Spintronic Transistor.

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