Subhananda Chakrabarti

• III-V Compound semiconductor materials growth and characterization
• Optoelectronic Devices of interest includes quantum dot photodetectors and Solar cells
• III-V device integration on germanium

EE672 Microelectronics Lab

EE221 Digital Electronics(Minor)

EE728 Growth and Characterization of Nanoelectronic Materials and Devices

EE457 Compound Semiconductor Materials and Devices (Honours)

Ph.D Calcutta University

M.Sc Calcutta University

ASSOCIATE PROFESSOR: DEPT. OF ELECTRICAL ENGINEERING, INDIAN INSTITUTE OF TECHNOLOGY BOMBAY, POWAI, MUMBAI 400 076, MAHARASHTRA, INDIA; FROM FEB. 2009.

ASSISTANT PROFESSOR: DEPT. OF ELECTRICAL ENGINEERING, INDIAN INSTITUTE OF TECHNOLOGY BOMBAY, POWAI, MUMBAI 400 076, MAHARASHTRA, INDIA; FROM SEP. 2007- FEB. 2009.

SENIOR RESEARCHER (RA2): DEPT. OF ELECTRONICS & ELECTRICAL ENGINEERING., UNIVERSITY OF GLASGOW (GLASGOW, UK) AUG, 2006-SEP. 2007.

SENIOR RESEARCHER: NATIONAL CENTER FOR PLASMA SCIENCE & TECHNOLOGY, SCHOOL OF PHYSICAL SCIENCES, DUBLIN CITY UNIVERSITY (DUBLIN, IRELAND),NOV, 2005- AUG, 2006.

SENIOR RESEARCH FELLOW: DEPT. OF ELEC. ENGR. & COMP. SC., UNIVERSITY OF MICHIGAN (ANN ARBOR, MI,USA)MAY, 2001-SEP, 2005.

LECTURER: DEPT. OF PHYSICS; ST. XAVIER’S COLLEGE; 30 PARK STREET; CALCUTTA 700 016; INDIA. 1997-2000.

1. “A DETAILED PHOTOLUMINESCE INVESTIGATION OF THE IMPACT OF ANNEALING ON NANO-SCALE In(Ga)As/GaAs-BASED QUANTUM DOT HETEROSTRUCTURES”, Department of Science and Technology, India. Principal Investigator (COMPLETED. Adjudged “EXCELLENT” by the SERC-DST EECS Review panel.

2. “DEVELOPMENT OF FERROELECTRIC AND MULTIFERROIC MEMS DEVICES”, Naval Research Board. Principal Investigator

3. “CONTROL AND OPTIMIZATION OF PULSED LASER DEPOSITION TECHNIQUE FOR GROWTH OF ZnO BASED MATERIALS AND DEVICES” Department of Science and Technology, India. Co-Principal Investigator

4. “AN INVESTIGATION INTO THE IMPACT OF ANNEALING ON THE OPTICAL, ELECTRICA AND SPECTRAL CHARACTERISTICS OF InAs/GaAS - BASED NANO-SCALE QUANTUM DOT HETEROSTRUCTURES” Department of Science and Technology, India. Principal Investigator.

• Have successfully grown multi-layer electronically-coupled quantum dot heterostructures to be used for Intermediate Band Solar Cells.

• Have successfully demonstrated the optimized growth of III-V GaAs-AlGaAs Quantum Wells on Germanium.

• Demonstrated p-type behavior in nitrogen-doped ZnO from 220 to 450K grown by plasma-assisted PLD.

• Demonstrated photo-induced p-type behavior in nitrogen-doped ZnO.

• Conducted extensive MBE of GaAs-based strained and lattice-matched heterostructures leading to the growth of state-of-the-art quantum dot infrared photodetectors (QDIPs). In particular, we demonstrated increased quantum dot density using Al-bearing compounds, which led in part to high responsivity (2.5 A/W at 78 K) from an InAs QDIP incorporating an AlAs/GaAs periodic barrier.

• Demonstrated high-temperature (175 K) operation in QDIPs using 70 InAs/GaAs quantum dot layers. Also demonstrated high detectivity (1011 cmHz1/2/W at 78 K) and low noise-equivalent temperature difference (10 mK at 78 K) with the 70-layer QDIP. These values represent the state-of-the-art in QDIP operation.

• Demonstrated the first three color infrared response from InGaAs QDIP. This work also established the first voltage-tunable two-color response from a QDIP at temperatures >80K.

• Demonstrated long wavelength response λcutoff = 8.5 µm from InGaAs QDIP operating at temperatures > 200K.

• Demonstrated the first room temperature Resonant tunnel QDIP.

• Conducted extensive characterization of QDIP performance (such as gain, spectral response, responsivity, detectivity, and uniformity) at the U.S. Army Research Laboratory and NASA-Jet Propulsion Laboratory .

• Advanced QDIPs from an experimental ‘curiosity’ to a device that is a serious contender for other IR technologiesand may emerge as the only IR detector suitable for high temperature ( 200 K) focal plane arrays.

• Establishment of low-temperature MBE growth techniques for successful growth of (In,Mn)As diluted magnetic quantum dots. Measured very high Curie temperature (~345K) in as-grown dots. This is the highest Tc measured in a III-Mn-V system.

• Demonstration of electrical spin-injection into quantum dots using GaMnAs spin injector and measurement of spin-polarized light from quantum dot LED at temperatures beyond 80K.

• First demonstration of spin-polarized light emission from quantum dot LED with InMnAs quantum dots as the spin injector layer upto a temperature of 180K. This is the highest temperature of operation for any spin-polarizeddevice.

• First demonstration of electrically-injected spin-polarized vertical-cavity surface-emitting laser for polarization modulation of coherent light emission.

• Demonstrated ion-detection with Photonic Crystal microcavities.

Department of Electrical Engineering
IIT Bombay, Powai
Mumbai 400 076, India
Email : subho[AT]ee.iitb.ac.in
Phone (Internal(O)) : (0091 22) - 2576 7421
Phone (Internal(R)) : 8421
Office room no:
Fax: (0091 22) - 25723707
Personal homepage

2012

74. S. Sengupta, J. O. Kim, A.V. Barve, S. Adhikary, Y.D. Sharma, N. Gautam, S. J. Lee, S. K. Noh, S. Chakrabarti and S. Krishna, “Sub-monolayer quantum dots in confinement enhanced dots-in-a-well heterostructure,” Applied Physics Letters, Vol.100, pp.191111, 2012, http://dx.doi.org/10.1063/1.4711214 .

73. A.V. Barve, S. Meesala, S. Sengupta, J. O. Kim, S. Chakrabarti and S. Krishna, “Investigation of Non-uniform Electric Field in Intersubband Quantum Infrared Photodetectors” Applied Physics Letters, Vol.100, pp.191107, 2012, http://dx.doi.org/10.1063/1.4712601 .

72. N. Halder, S. Adhikary and S. Chakrabarti”,Inhibition of emission wavelength blueshift in annealed InAs/GaAs quantum dot stacks: An important observation for their potential application in photovoltaic devices” to be published in Applied Physics A: Materials Science and Processing, http://dx.doi.org/10.1007/s00339-012-6852-3.

71. A. Mandal, N. Halder, U. Verma and S. Chakrabarti,”The impact of monolayer coverage, barrier thickness and growth rate on the thermal stability of photoluminescence of coupled InAs/GaAs quantum dot hetero-structure with quaternary capping of InAlGaAs” Materials Research Bulletin, http://dx.doi.org/10.1016/j.materresbull.2011.12.047 .

70. S. Shah, N. Halder, S. Sengupta and S. Chakrabarti, “Comparison of Luminescence Properties of Bilayer and Multilayer InAs/GaAs Quantum Dots” Materials Research Bulletin, Vol. 47, No.1, pp. 130-134, January 2012, http://dx.doi.org/10.1016/j.materresbull.2011.09.013.

69. S. Nagar and S. Chakrabarti,”Effect of phosphorus irradiation on the structural, electrical, and optical characteristics of ZnO thin films,” Journal of Luminescence,Vol. 132, pp. 1089-1094, 2012, http://dx.doi.org/10.1016/j.jlumin.2011.12.058.

68. S. Banerjee, N. Halder and S. Chakrabarti, “Self-assembled InGaAs/GaAs Quantum Dot Photodetector on Germanium substrate” Physica Status Solid C, Vol. 9, No.2,pp.322-325,2012,http://dx.doi.org/10.1002/pssc.201100252.

2011

67. R. Makhijani, N. Halder, S. Sengupta and S. Chakrabarti, “Temperature Dependent Photoluminescence Investigation of the Effect of Growth Pause Induced Ripening in InAs/GaAs Quantum Dot Heterostructures” Materials Research Bulletin, http://dx.doi.org/10.1016/j.materresbull.2011.11.059.

66. S. Chakrabarti, S. Adhikary, N. Halder, Y. Aytac and A. G. U. Perera, “High-performance, long-wave (~10.2 µm) InGaAs/GaAs quantum dot infrared photodetector with quaternary In0.21Al0.21Ga0.58As capping” Applied Physics Letters, Vol.99, No. 18,pp.181102, 2011 .

65. E. McCarthy, R. T. Rajendra Kumar, B. Doggett, S. Chakrabarti, R. J. O’haire, S. B. Newcomb, J. -P. Mosnier, M. O. Henry and E. McGlynn, “Effect of the crystallite mosaic spread on integrated peak intensities in 2Θ-ω measurements of highly crystallographically textured ZnO thin films,” Journal of Physics D: Applied Physics, Vol.44, pp.375401, 2011.

64. R. Sreekumar, A. Mandal and S. Chakrabarti, “Effect of high energy proton irradiation on InAs/GaAs quantum dots: Enhancement of photoluminescence efficiency (upto ~ 7 times) with minimum spectral signature shift”, Materials Research Bulletin,Vol.46, No.11,pp.1786-1793, Nov 2011 ,http://dx.doi.org/10.1016/j.materresbull.2011.07.048.

63. K. Ghosh, S. Kundu, N. Halder, S. Messala and S. Chakrabarti, “Annealing of In0.45Ga0.55As/GaAs quantum dots overgrown with large monolayer (11 ML) coverage for applications in thermally stable optoelectronic devices” Solid State Communication,Vol.151, pp.1394-1399, October 2011.

62. S Adhikary, N Halder and S Chakrabarti, “Thermal stability of the peak emission wavelength in multilayer InAs/GaAs QDs capped with a combination capping of InAlGaAs and GaAs”, Journal of Nanoscience and Nanotechnology, Vol.11, NO.5, pp.4067-4072, May 2011.

61. S. Sengupta, S. Shah, N. Halder and S. Chakrabarti,”Investigation of larger monolayer coverage in the active layer of the bilayer InAs/GaAs quantum dot structure and effects of post-growth annealing”, Applied Physics A: Materials Science and Processing, Vol. 103, No.1, pp.245-250, April 2011.

2010

60. R. Sreekumar, A. Mandal and S. Chakrabarti,”Effect of heavy ion implantation on self assembled single layer InAs/GaAs quantum dots,” Journal of Physics D: Applied Physics, Vol.43, pp.505302, 2010.

59. S. Sengupta, N. Halder and S. Chakrabarti, “Effect of post-growth rapid thermal annealing on bilayer InAs/GaAs quantum dot heterostructure grown with very thin spacer thickness” Materials Research Bulletin, Vol. 45, No.11, pp. 1593-1597, November 2010.

58. S. Adhikary,K. ghosh, s. Chowdhury, N. Halder and S. Chakrabarti, “An approach to suppress the blueshift of photoluminescence peaks in coupled multilayer InAs/GaAs quantum dots by high temperature post growth annealing” Materials Research Bulletin, Vol. 45, No.10, pp. 1466-1469, October 2010

57. S. Sengupta, S. Shah, N. Halder and S. Chakrabarti, “Comparison of single-layer and bilayer InAs/GaAs quantum dots with a higher InAs coverage”, Opto-Electronics Review, Vol.18, No.3, pp. 295-299, September 2010.

56. T. Patil, P. Mahajan and S. Chakrabarti, “Effect of progressive annealing on Silicon Nanostructures grown by Hot Wire Chemical Vapor Deposition,” Superlattices and Microstructures, Vol. 48, No. 2, pp.190-197, August 2010.

55. S. Banerjee, N. Halder and S. Chakrabarti, “Stranski-Krastanow growth of multilayer In(Ga)As/GaAs QDs on Germanium substrate” Applied Physics A: Material Science and Processing, Vol.99, No.4, pp.791-795, June 2010.

54. Srujan M, K Ghosh, S. Sengupta and S. Chakrabarti, “Presentation and experimental validation of a model for the effect of thermal annealing on the photoluminescence of self-assembled InAs/GaAs quantum dots” Journal of Applied Physics, Vol. 107, pp.123107, June 2010.

53. S. Adhikary, N. Halder and S. Chakrabarti, “Investigation of strain in self assembled multilayer InAs/GaAs Quantum Dot heterostructures” Journal of Crystal Growth, Vol.312, No.5, pp.724-729 ,15th February 2010.

52. S. Chowdhury, S. Adhikary, N. Halder and S. Chakrabarti “A Novel Approach to increase emission wavelength of InAs/GaAs quantum dots by using a quaternary capping layer” Opto-Electronics Review, Vol.18, No.3, pp.246-249, September 2010.

51. S. Nagar and S. Chakrabarti, “Evidence of p-doping in ZnO films deposited on GaAs,” Thin Solid Films, Vol. 518, No.16, pp.4542-4545, June 2010.

50. N.Halder, Suseendran. J, S. Chakrabarti, M. Herrera, M. Bonds and N. Browning,”Effect of InAlGaAs and GaAs combination barrier thickness on the duration of dot formation in different layers of stacked InAs/GaAs quantum dot heterostructure grown by MBE,” Journal of Nanoscience and Nanotechnology, Vol.10, No. 8, pp. 5202-5206(5), August 2010 .

2009

49. Suseendran J, N. Halder, S. Chakrabarti,” Stacking of multilayer InAs quantum dots with combination capping of InAlGaAs and high temperature grown GaAs” Superlattices and Microstructures,Vol.46, No.6,pp.900-906,December 2009 .

48. S. Sengupta, N. Halder and S. Chakrabarti,”Investigation of effect of varying growth pauses on the structural and optical properties of InAs/GaAs quantum dots heterostructure” Superlattices and Microstructures,Vol.46, No.4, pp.611-617, October 2009.

47. N. Halder, R. Rashmi, S. Chakrabarti, C. R. Stanley, M. Herrera and N. D. Browning, “A comprehensive study of the effect of in situ annealing at high growth temperature on the morphological and optical properties of self assembled InAs/GaAs QDs” Applied Physics A: Material Science and Processing, Vol.95, pp.713-720, April 2009.

2008

46. S. Chakrabarti, N. Halder, S. Sengupta, J. Charthad, S. Ghosh and C. R. Stanley “A detailed PL investigation on the effect of barrier thickness and monolayer coverage on bilayer InAs/GaAs QDs grown at a reduced growth rate”, Journal of Nanoelectronics and Optoelectronics,Vol.3, No.3, pp. 277-280(4), December 2008.

45. S. Chakrabarti, N. halder, S. Sengupta, J. Charthad, S. Ghosh and C. R. Stanley, “Vertical Ordering and Electronic Coupling in Bilayer Nanoscale InAs/GaAs Quantum Dots Separated by a Thin Spacer Layer”, Nanotechnology, Vol.19, pp.505704, December 2008.

44. N. Halder, S. Chakrabarti and C. R. Stanley, “Tunability of Photoluminescence of InAs/GaAs Quantum Dots By growth Pause Induced Ripening” Journal of Nanoscience and Nanotechnology, Vol.8,pp.6232–6237, December 2008.

43. A. G. U. Perera, G. Ariyawansa, V. M. Apalkov, S. G. Mastik, X. H. Su, S. Chakrabarti and P. Bhattacharya, “Wavelenght and Poarization Selective Multi-band Tunneling quantum dot infrared detectors,” Opto-Electronics Review, Vol.15, No.4, pp. 223-228, 2007.

42. R. T. Rajendra Kumar, E. McGlynn, C. McLoughlin, S. Chakrabarti, M. Biswas, M. O. Henry, J. –P. Mosnier, K. Kumarappan and G. Hughes, “Control of ZnO Nanorod Array Density By Zn Supersaturation Variation and Effects on Field Emission”, Nanotechnology, Vol.18, pp.215704(6 pages), 2007.

41. Z. K. Wu, H. Choi, X. H. Su, S. Chakrabarti, P. Bhattacharya and T. B. Norris, “Ultrafast Electronic Dynamics in Unipolar n-doped InGaAs/GaAs Self-Assembled Quantum Dots, IEEE Journal of Quantum Electronics, Vol.43, No.6, pp.486-496, June 2007.

40. G. Ariyawansa, A. G. U. Perera, X. H. Su, S. Chakrabarti and P. Bhattacharya, “Multi-color Tunneling quantum dot infrared photodetectors operating at room temperature,” Iinfrared Physics and Technology, Vol.50, pp.156-161, 2007.

39. B. Doggett, S. Chakrabarti, R O’Haire, A. Meaney, E. McGlynn, M. O. Henry, and J. –P. Mosnier, “A Characterization of Phosphorus-doped ZnO Thin Films grown by Pulsed Laser Deposition,” to be published in Superlattices and Microstructures, Vol.42, pp.72-78, 2007.

38. S. Chakrabarti, B. Doggett, R O’Haire, E. McGlynn, M. O. Henry, A. Meaney and J. –P. Mosnier, “Characterization of Nitrogen-doped ZnO Thin Films grown by Plasma-Assisted Pulsed Laser Deposition on Sapphire Substrates,” Superlattices and Microstructures, Vol.42, pp.21-25, 2007.

37. S. Chakravarty, P. Bhattacharya and S. Chakrabarti, Y. Kang and M. E. Meyerhoff, “Multimodal Lasing in Photonic Crystal Microcavities,” Optics Letters, Vol.32, No.10, pp.1296-1298, 2007.

36. S. Chakrabarti, B. Doggett, R O’Haire, E. McGlynn, M. O. Henry, A. Meaney and J. –P. Mosnier, “P-type behavior above room temperature in Nitrogen-doped ZnO Thin film grown by plasma-assisted pulsed laser deposition,” Electronics Letters, Vol.42, No.20, pp.1181-1182, 28th Septemper 2006.

35. M. Holub, J. Shin, S. Chakrabarti and P. Bhattacharya, “Spin-polarized Vertical-Cavity Surface-Emitting Laser: Epitaxial Growth Issues and Device Properties”, Journal of Vacuum Science and Technology B, Vol.24, No.3, pp.1510-1513, May/June 2006.

34. L. A. Farina, X. Bai, C. Kurdak, S. Chakrabarti and P. Bhattacharya, “Study of Quantum Hall Edge States with a Single Electron Transistor Coupled to an Antidot,” Physica E: Low Dimensional Systems & Nanostructures, Vol.34, pp.187-190, 2006.

33. X. Bai, T. Eckhause, S. Chakrabarti, P. Bhattacharya, R. Merlin and C. Kurdak, “Phonon detection Using Quasi-One Dimensional Quantum Wires,” Physica E: Low Dimensional Systems & Nanostructures, Vol.34, pp.592-595, 2006.

32. J. Topolancik, S. Chakravarty, S. Chakrabarti and P. Bhattacharya, “Electrically injected quantum dot photonic crystal microcavity light sources,” Optics Letters , Vol.31, No.2, pp.232-234, January 2006.

31. S. Chakravarty, J. Topolancik, P. Bhattacharya, S. Chakrabarti, Y. Kang and M. E. Meyerhoff, “Ion Detection With Photonic Crystal Microcavities,” Optics Letters, Vol.30, No. 19, pp.2578-2580, October 2005.

30. S. Chakravarty, Y. Kang, J. Topolancik, P. Bhattacharya, M. E. Meyerhoff and S. Chakrabarti, “Photonic Crystal Microcavity source-based Chemical Sensor,” Proc. SPIE 6005, 600504, 2005.

29. M. Holub, J. Shin, S. Chakrabarti and P. Bhattacharya, “Electrically-injected spin-polarized vertical-cavity surface-emitting laser,” Applied Physics Letters, Vol. 87, No. 19, pp.091108 (3 pages), August 2005..

28. X. H. Su, S. Chakrabarti, P. Bhattacharya, G. Ariyawansa and A. G. U. Perera, “A Resonant tunneling quantum Dot Infrared photodetector,” IEEE Journal of Quantum Electronics, Vol.41, No. 7, pp.974-979, July 2005 .

27. S. Chakrabarti, A. D. Stiff-Roberts, X. H. Su, P. Bhattacharya, G. Ariyawansa and A. G. U. Perera, “High Performance Mid-Infrared Quantum Dot Infrared Photodetectors,” Journal of Physics D: Applied Physics, Special issue”Self Organized Quantum dots”, July 2005.

26. P. Bhattacharya, X. H. Su, S. Chakrabarti, G. Ariyawansa and A. G. U. Perera, “Characteristics of a tunneling quantum dot infrared photodetector operating at room temperature,” Applied Physics Letters, Vol. 86, No. 19, pp.191106 (3 pages), May 2005.

25. S. Chakrabarti, M. Holub, P. Bhattacharya, T. D. Mishima, M. B. Santos, M. B. Johnson and D. A. Blom, “Spin Polarized Light Emitting Diodes with Mn-doped InAs Quantum dots Nanomagnets as Spin Aligner,” Nano Letters, Vol. 5, No.2, pp.209-212, February 2005.

24. J. N. Gleason, M. E. Hjelmstad, V. D. Dasika, R. S. Goldman, S. Fathpour, S. Chakrabarti and P. Bhattacharya, “Nanometer-scale studies of point defect distributions in GaMnAs alloys,” Applied Physics Letters, Vol. 86, pp.011911(3-pages), January 2005.

23. P. Bhattacharya, M. Holub, J. Shin and S. Chakrabarti, “Spin-polarized Semiconductor Light Sources,” Proc. SPIE 5734, 31, 2005.

22. S. Chakrabarti, X. H. Su, P. Bhattacharya, G. Ariyawansa and A. G. U. Perera, “Characteristics of a multi-color InGaAs/GaAs quantum dot infrared photodetector,” IEEE Photon. Technol. Lett., Vol. 17, pp.178-180, January 2005.

21. D. Chen, T. E. Murphy, S. Chakrabarti and J. D. Phillips, “Optical Waveguiding In BaTiO3/MgO/AlxOy/GaAs Heterostructures ,” Applied Physics Letters, Vol. 85, pp.5206-5208, November 2004.

20. X. H. Su, S. Chakrabarti, A. D. Stiff-Roberts, J. Singh and P. Bhattacharya, “Novel Quantum Dot Photodetector Design Based on Double Barrier Resonant Tunneling,” Electronics Letters, Vol.40, pp.1082-1083, August 2004.

19. M. Holub, S. Chakrabarti, S. Fathpour, P. Bhattacharya, Y. Lei, and S. Ghosh, “Mn-doped InAs self-organized diluted magnetic quantum dot layers with Curie temperatures above 300K,” Applied Physics Letters, Vol.85, pp.973-975, August 2004.

18. S. Chakrabarti, A. D. Stiff-Roberts, P. Bhattacharya, and S. Kennerly, “Heterostructures for Achieving Very Large Responsivity in InAs/GaAs Quantum Dot Infrared Photodetectors,” Virtual Journal of Nanoscience and Technology, Vol.9, No.24, June 2004.

17. S. Fathpour, M. Holub, S. Chakrabarti and P. Bhattacharya, “Spin-polarized quantum dot light emitting diodes with high polarization efficiency at high temperatures,” Electronics Letters, Vol.40, No.4, pp.694-695, May 2004.

16. S. Chakrabarti, A. D. Stiff-Roberts, P. Bhattacharya, and S. Kennerly, “Heterostructures for Achieving Very Large Responsivity in InAs/GaAs Quantum Dot Infrared Photodetectors,” Journal of Vacuum Science and Technology B, Vol.22, No.3, pp.1499-1502, May/June 2004.

15. S. Chakrabarti, A. D. Stiff-Roberts, P. Bhattacharya, S. Gunapala, S. Bandara, S.B. Rafol and S. W. Kennerly, “High temperature operation of InAs/GaAs quantum dot infrared photodetector with large responsivity and detectivity,” IEEE Photonics Technology Letters , Vol.16, No.5, pp. 1361-1363, May 2004.

14. S. Chakrabarti, S. Fathpour, K. Moazzami, J. Phillips, N. Browning and P. Bhattacharya, “Pulsed laser annealing of self-organized InAs/GaAs quantum dots,” Journal of Electronic Materials(letters), Vol.33, No.4, pp. L5- L8, April 2004.

13. P. Bhattacharya, S. Fathpour, S. Chakrabarti, M. Holub and S. Ghosh, “Application of Dilute Magnetic Semiconductors and Quantum Dots to Spin Polarized Light Sources,” Mater. Res. Soc. Symp. Proc., 794, pp.T8.1.1-T8.1.11 (2004).

12. A. D. Stiff-Roberts, X. H. Su, S. Chakrabarti and P. Bhattacharya, “Contribution of field-assisted tunneling emission to dark current in InAs/GaAs quantum dot infrared photodetectors,” IEEE Photonics Technology Letters, Vol.16, No.3, pp.867-869, March 2004.

11. S. Chakrabarti, A. D. Stiff-Roberts, P. Bhattacharya and S. W. Kennerly, “High responsivity AlAs/InAs/GaAs superlattice quantum dot infrared photodetector,” Electronics Letters, Vol.40, No.3, pp.197-198, February 2004.

10. S. Chakrabarti, P. Bhattacharya, A. D. Stiff-Roberts, Y. Y. Lin, J. Singh, Y. Lei, and N. Browning, “Intersubband absorption in annealed InAs/GaAs quantum dots: a case for polarization-sensitive infrared detection,” Journal of Physics D: Applied Physics, vol. 36, pp. 1794-1797, July 2003.

9. B. Kochman, A. D. Stiff-Roberts, S. Chakrabarti, J. D. Phillips, S. Krishna, J. Singh, and P. Bhattacharya, “Absorption, carrier lifetime, and gain in InAs/GaAs quantum dot infrared photodetectors,” IEEE Journal of Quantum Electronics, vol. 39, pp. 459-467, March 2003.

8. A. D. Stiff-Roberts, S. Chakrabarti, S. Pradhan, B. Kochman, P. Bhattacharya, “Raster-scan imaging with normal-incidence, mid-infrared InAs/GaAs quantum dot infrared photodetectors,” Applied Physics Letters, vol. 80, pp. 3265-3267, May 2002. 7. S. Dhar and S. Chakrabarti, “Large photoresponse of CdO/Porous Si diodes,” Semicond. Sci. Technol., vol.15, L.39-L40, Nov. 2000.

6. S. Chakrabarti and S. Dhar, “Temperature-dependent behavior of chalcogenide thin-film contacts on porous silicon,” Solid State Phenomena, Vol.55, pp.77-79, 1997.

5. S. Chattopadhyay, L. K. Bera, K. Maharatna, S. Chakrabarti, S. Dhar, S. K. Ray and C. K. Maiti, “Schottky diode characteristics of Ti on strained-Si,” Solid State Electronics, Vol. 41, pp.1891-1893, Dec.1997.

4. S. Dhar and S. Chakrabarti, “Properties of chemically deposited Cu2S films on porous silicon,” J. Appl. Phys.., vol.82, pp.655-657, Jul. 1997.

3. S. Dhar and S. Chakrabarti, “Electroless Ni plating on n- and p-type porous Si for ohmic and rectifying contacts,” Semicond. Sci. Technol., vol.11, pp.1231-1234, Aug. 1996. 2. S. Dhar and S. Chakrabarti, “Electroless Nickel Plated contacts on Porous silicon,” Applied Physics Letters, vol.68, pp.1392-1394, March 1996.

1. P. Chattopadhyay, D. P. Haldar, S. Chakrabarti and M. Ray, “Effect of Deep-level Impurities on the Grain-Boundary Potential of a Polycrystalline Semiconductor,” Phys Stat SolidiA-Applied Research, vol. 142, pp. 117-125, March 1994.

“Analysis of Thermal Stability of PL Peak Wavelength in GaAs1-xNx Capped InAs Quantum Dots”, MRS Spring Meeting, San Francisco, USA, April 2012.

“10-Fold Enhancement in Photoluminescence Efficiency Due to Low Energy H- Ion Irradiation over InAs/GaAs Quantum Dots”, MRS Spring Meeting, San Francisco, USA, April 2012.

“Impact of Barrier Thickness on the Structural and Optical Properties of Multilayer(x10) Coupled InAs/GaAs Quantum Dots Using Bilayer(X2) Quantum Dots as the Seed for Strain Patterning”, MRS Spring Meeting, San Francisco, USA, April 2012.

“A Detailed Investigation into Strain-coupled Bi-layer InAs/GaAs Quantum Dots: Impact of Variation in Deposition Rate, Barrier Thickness and Monolayer Coverage” MRS Spring Meeting, San Francisco, USA, April 2012.

“The impact of growth rate and barrier thickness on the thermal stability of photoluminescence for coupled InAs/GaAs quantum dot heterostructures with quaternary(InAlGaAs) capping,” SPIE PHOTONIC WEST,San Francisco, California United States, 21-26 January 2012.

“Ground state energy trend in single and multilayered coupled InAs/GaAs QDs capped with InGaAs layers: effect of thickness of InGaAs layer and the RTA treatment,” SPIE PHOTONIC WEST,San Francisco, California United States, 21-26 January 2012.

“Theoretical and experimental investigation on the large monolayer In0.45Ga0.55As/GaAs quantum dots for thermally stable optoelectronic devices” 38th International Symposium on Compound Semiconductors,Berlin, Germany, May 22-26, 2011.

“Optical and Structural Investigation of MBE grown In(Ga)As/GaAs Quantum Dot Detector Structure on Germanium Substrate”, 38th International Symposium on Compound Semiconductors,Berlin, Germany, May 22-26, 2011.

75. S. Nagar, S. Chakrabarti and S. K. Gupta, “Influence of Li implantation on the optical and electrical properties of ZnO film,” SPIE Photonic West, San Francisco, USA, January 22-27, 2011.

74. S. Banerjee, N. Halder and S. Chakrabarti, “Molecular beam epitaxial growth of GaAs/AlGaAs multi quantum well on germanium substrate,” SPIE Photonic West, San Francisco, USA, January 22-27, 2011.

73. A. Mandal,S. Chakrabarti and S. K. Gupta,”Photoluminescence and Hall study for the production and recovery of defects in phosphorus implanted ZnO films,” SPIE Photonic West, San Francisco, USA, January 22-27, 2011.

72. S. Shah, S. Sengupta and S. Chakrabarti, “Room-temperature Long-wavelength (~1.45μm) Emission from Self-assembled InAs/GaAs Quantum Dots,” Materials Research Society Meeting, Boston, USA, Nov. 29 - Dec. 3, 2010.

71. R. Sreekumar, S. Chakrabarti and S.K. Gupta,”Effect of Low Energy Proton Irradiation on Single Layer InAs/GaAs Quantum Dot Heterostructure,” Materials Research Society Meeting, Boston, USA, Nov. 29 - Dec. 3, 2010.

70. S. Messala, K. Ghosh, S. Sengupta and S. Chakrabarti, “Theoretical Model on Thermal Annealing of Self-assembled InAs/GaAs Quantum Dots and Its Experimental Validation,” Materials Research Society Meeting, Boston, USA, Nov. 29 - Dec. 3, 2010.

69. R. Sreekumar, S.Sengupta, S. Chakrabarti, S. K. Gupta,”Enhancement of Luminescence Efficiency in InAs/GaAs Quantum Dots by Proton Irradiation”, Electronic Materials conference 2010, Notre Dame, USA, June 22-25th, 2010.

68. N. Halder, S. Adhikary and S.Chakrabarti,”Thermal Stability in Emission Peak in Multilayer InAs/GaAs Quantum Dot Heterostructure in Laser Application”, Electronic Materials conference 2010, Notre Dame, USA, June 22-25th, 2010

67. S. Banerjee, N. Halder and S. Chakrabarti, “Self Assembled Growth of Nanostructures on Germanium Substrate by Molecular Beam Epitaxy”, European Material Research society (EMRS) Meeting 2010, Congress Center, Strasbourg, France, June 7-11th, 2010.

66. R. Sreekumar, S. Sengupta, S. Chakrabarti, and S. K. Gupta, “Investigation of degradation of photoluminescence efficiency in InAs/GaAs quantum dots on heavy ion bombardment”, European Material Research society (EMRS) Meeting 2010, Congress Center, Strasbourg, France, June 7-11th, 2010.

65. Srujan M, K. Ghosh, S. Chakrabarti and S. Sengupta, “Theoretical modelling on thermal annealing of self-assembled InAs/GaAs quantum dots and its experimental validation” European Material Research society (EMRS) Meeting 2010, Congress Center, Strasbourg, France, June 7-11th, 2010.

64. A. Mandal, S. Kala and S. Chakrabarti, “High Hall mobility in Antimony-doped p-type ZnO film”, European Material Research society (EMRS) Meeting 2010, Congress Center, Strasbourg, France, June 7-11th, 2010.

63. A. Mandal and S. Chakrabarti, “Structural and electrical properties of rectifying p-ZnO/n+-InP heterojunction.” SPIE Photonics West in San Francisco, California, USA 23-28 January 2010.

62. A. Mandal and S. Chakrabarti, “Realization of Stable p-type Behavior of ZnO Thin Films Deposited on InP,” MRS Fall Meeting 2009, Boston, USA, Nov 30 - Dec 4, 2009.

61. S. Sengupta, N. Halder and S. Chakrabarti, “Strain Induced Stoppage of the Emission Peak Blueshift of Annealed Bilayer Quantum Dot Structures Separated by Thin Spacer,” MRS Fall Meeting 2009, Boston, USA, Nov 30 - Dec 4, 2009.

60. A. Mandal and S. Chakrabarti,”High P-type conductivity in Phosphorus-doped ZnO film,” European Material Research society (EMRS)Fall Meeting 2009, Warsaw Institute of Technology, Warsaw,Poland,September 14-18, 2009.

59. S. Chowdhury, S. Adhikary and S. Chakrabarti,”Increasing the size of InAs/GaAs multilayer coupled quantum dots with low defect density by using a InAlGaAs quarternary capping layer,” European Material Research society (EMRS)Fall Meeting 2009, Warsaw Institute of Technology, Warsaw,Poland,September 14-18, 2009.

58. S. Sengupta and S. Chakrabarti,”A Comparative study of single layer and bi-layer InAs/GaAs quantum dots (QDs) with higher InAs monolayer coverage,” European Material Research society (EMRS)Fall Meeting 2009, Warsaw Institute of Technology, Warsaw,Poland,September 14-18, 2009.

57. Suseendran J, N. Halder and S. Chakrabarti, “Strain -induced modifications of dot formation time of InAs quantum dot heterostructure grown by molecular beam epitaxy”, 17th American Conference on Crystal Growth and Epitaxy, Lake Geneva, Wisconsin, USA, August 9 - 14, 2009.

56. S. Nagar and S. Chakrabarti, “Evidence of p-doping in ZnO films deposited on GaAs,”European Material Research society (EMRS) Meeting 2009, Congress Center, Strasbourg, France, June 8-12th, 2009.

55. S. Adhikary and S. Chakrabarti, “Ivestigation of structural and optical properties of coupled multilayer InAs/GaAs quantum dots with combinational In0.21Al0.21Ga0.58As/ GaAs capping,”European Material Research society (EMRS) Meeting 2009, Congress Center, Strasbourg, France, June 8-12th, 2009.

54. Suseendran J, N. Halder and S. Chakrabarti “Effect of InAlGaAs and GaAs combination barrier thickness on the stacking of coupled InAs/GaAs quantum dot layers grown by MBE,” European Material Research society (EMRS) Meeting 2009, Congress Center, Strasbourg, France, June 8-12th, 2009.

53. P.Mahajan, T. Patil and S. Chakrabarti, “HWCVD-grown Silicon Nanocrystals : A Study of the Effect of Annealing on Structures Evolved with Varying Growth Rates,” MRS Spring Meeting 2009, San Francisco, USA, April 13-17th, 2009.

52. Suseendran J, N.Halder, S. Sengupta, S. Chakrabarti and T. D. Mishima,”Optimized Stacking of Nanoscale InAs/GaAs Quantum Dots in Multilayer Heterostructures”, 2nd International conference on Frontiers in Nanoscience and Technology (Cochin Nano 2009), Cochin, India. January 3-6, 2009.

51. S. Sengupta, N. Halder, S. Chakrabarti, M. Herrera and N. G. Browinng, “Investigation of the effect of varying dot ripening time on the structural and optical properties of Nanoscale InAs/GaAs Quantum Dots layer”, 2nd International conference on Frontiers in Nanoscience and Technology (Cochin Nano 2009), Cochin, India. January 3-6, 2009.

50. N. Halder, J. Charthad and S. Chakrabarti, “TEM and PL Characterization of InAs-GaAs Bi-layer QDs” PHOTONICS 2008: The International Conference on Fiber Optics and Photonics, New Delhi, India, December 14-17, 2008.

49. J. Charthad, N.Halder, S. Chakrabarti, Miriam Herrera, Nigel D. Browning and C.R. Stanley, “A Detailed Investigation of the Effect of Ripening Pause on the Structural and Optical Characteristics of InAs/GaAs Quantum Dot” 2008 Asian Conference on Nanoscience and Nanotechnology(AsiaNANO2008),Biopolis, Singapore, November 3-7, 2008.

48. Prashanthi K, S.P.Duttagupta, S. Chakrabarti and V. R. Palkar,” C-V characteristics of multiferroic Bi0.7Dy0.3FeO3 thin films directly integrated on <100>Silicon”, 53rd Magnetism and Magnetic Materials Conference, Austin Texas, USA, November 10-14, 2008.

47. Prashanthi K, S. Chakrabarti and V. R. Palkar,”Integration of novel multiferroic thin films on GaN/Sapphire and GaAs substrates for high frequency device applications”, 53rd Magnetism and Magnetic Materials Conference,Austin Texas, USA, November 10-14, 2008.

46. S. Chakrabarti, N. Halder, J. Charthad, S. Ghosh and C. R. STanley, “Effect of Monolayer Coverage and Spacer Thickness on InAs/GaAs Bi-layer QDs grown at a reduced growth rate,” ISCS2008, 35th International Symposium on Compound Semiconductors, Europa-Park, Rust, Germany, September 21-24, 2008.

45. S. Chakrabarti, N. Halder and C. R. Stanley, “Optical and Structural Characterization of Coupled Multi-layer InAs/GaAs Quantum Dot Heterostructures Grown by Molecular Beam Epitaxy”,IUMRS-ICEM 2008,International Conference on Electronic Materials, Hilton Sydney, Sydney, Australia - 28th July to 1st August 2008

44. S. Chakrabarti, " A High Temperature Two-Color In(Ga)As/GaAs Quantum Dot-based infrared Photodetector”, International Conference on Sensors and Related Networks (SenNet’07), December 12-14, 2007

43. N. Halder and S. Chakrabarti,”Effect of Ripening pause on the Optical and Structural characteristics of InAs/GaAs Quantum Dots” International Conference on Emerging Technologies and applications in Engineering, Technology and Sciences,Rajkot, Gujrat,India, January 13-14, 2008

42. S. Chakrabarti, “Molecular Beam Epitaxial Growth of InAs/GaAs quantum Dot Heterostructures for Intermediate Band Solar Cells,” International conference on solar Cells (IC SOLACE 2008), January 21-23, 2008.

41. N. Halder and S. Chakrabarti, “Tunability of Photoluminescence of InAs/GaAs Quantum Dots by a Combination of Dot Pause and In0.21Al0.21Ga0.58As Quarternary Capping” Third international Conference on Luminescence and its Applications (ICLA 2008), National Physical Laboratory, New Delhi, India, February 13-16, 2008.

40. Z. –K. Wu, H. Choi, T. B. Norris, X. H. Su, S. Chakrabarti and P. Bhattacharya, “Investigation of spin-induced Pauli blocking on electron dynamics in n-type In0.4Ga0.6As/GaAs quantum dots”, Conference on Lasers and Electro-Optics, 2007.

39. S. Chakrabarti and C. Stanley, “III-V growth on Ge”, UK MBE-user Meeting, University of Manchester, Manchester, 4th and 5th April, 2007.

38. J. P. Mosnier, S. Chakrabarti and B. Doggett, “Material Properties of Nitrogen- and Phosphorus-doped ZnO Thin Films Grown by Plasma-assisted Pulsed Laser Deposition on Sapphire Substrates” submitted to 4th International workshop on ZnO and Related Materials, Germany, October 2006

37. G. Ariyawansa, A. G. U. Perera, X. H. Su, S. Chakrabarti and P. Bhattacharya, “Multi-color Tunneling quantum dot infrared photodetectors operating at room temperature,” International Workshop on Quantum Well Infrared Photodetectors, Kandy, Sri Lanka, June 2006

36. S. Chakrabarti, B. Doggett, M. Novotny, R. O’Haire, E. McGlynn, M. O. Henry, A. Meaney, and J. P. Mosnier, “Material Properties of Nitrogen-doped ZnO Thin Films Grown by Plasma-assisted Pulsed Laser Deposition on Sapphire Substrates” European Material Research Society 2006, Nice, France, May 2006

35. B. Doggett, S. Chakrabarti, R. O’Haire, E. McGlynn, M. O. Henry and J. P. Mosnier, “ A Study of the Material Properties of Phosphorus-doped ZnO Thin Films” European Material Research Society 2006, Nice, France, May 2006.

34. R. O’Haire, A. Meaney, B. Doggett, S. Chakrabarti, E. McGlynn, M. O. Henry and J. P. Mosnier, “ Growth and Characterization of ZnO Nanostructures Grown on Bare and Patterned Sapphire Substrates Using Pulsed Laser Deposition” European Material Research Society 2006, Nice, France, May 2006.

33. Z. K. Wu, H. Choi, T. B. Norris, S. Chakrabarti, X. H. Su and P. Bhattacharya, “Electron Dynamics in n-doped In0.4Ga0.6As/GaAs Quantum Dot Infrared Detector Structures” Conference on Lasers and Electro-Optics, 2006.

32. P. Bhattacharya, S. Chakrabarti, X. H. Su and A. D. Stiff-Roberts (INVITED), “Quantum Dot Infrared Photodetectors,” 2005 II-VI Workshop, Boston, MA, September 2005.

31. M. Holub, J. Shin, S. Chakrabarti and P. Bhattacharya, “Spin-VCSEL: Epitaxial Growth Issues and Device Properties”, submitted to North American Molecular Beam Epitaxy Conference, Santa Barbara, CA, September 2005.

30. X. H. Su, S. Chakrabarti, P. Bhattacharya, G. Ariyawansa and A. G. U. Perera, “A Tunnel Quantum Dot Infrared Photodetectors”, submitted to 8th International Conference on Intersubband Transition in Quantum Wells, Boston, MA, September 2005.

29. M. Holub, J. Shin, S. Chakrabarti and P. Bhattacharya, “Spin Injection and Polarization Switching in a Vertical-Cavity Surface-Emitting Laser: A Spin VCSEL”, submitted to Conference on Lasers and Electro-Optics, Baltimore, MD, May 2005.

28. S. Chakravarty, Y. Kang, J. Topolancik, P. Bhattacharya, M. E. Meyerhoff and S. Chakrabarti, “Photonic Crystal Microcavity source-based Ion Sensor,” IEEE Sensors, Irvine, CA, October-November 2005.

27. S. Chakravarty, Y. Kang, J. Topolancik, P. Bhattacharya, M. E. Meyerhoff and S. Chakrabarti, “Photonic Crystal Microcavity source-based Chemical Sensor,” Optics East, Boston, MA, October 2005.

26. S. Chakravarty, J. Topolancik, S. Chakrabarti and P. Bhattacharya, “Electrically Injected Quantum Dot Bottom-emitting Photonic Crystal Single Mode Microcavity Light Source”, Device Research Conference, University of California-Santa Barbara, Santa Barbara, CA, June 2005.

25. M. Holub, J. Shin, S. Chakrabarti and P. Bhattacharya, “Electrically-injected spin-polarized quantum well vertical-cavity surface-emitting lasers”, Device Research Conference, University of California-Santa Barbara, Santa Barbara, CA, June 2005.

24. X. Bai, T. Eckhause, S. Chakrabarti, P. Bhattacharya, R. Merlin and C. Kurdak, “Phonon detection Using Quasi-One Dimensional Quantum Wires,” submitted to Electronic Properties of Two-Dimensional systems(EP2DS), Albuquerque, NM, July 2005.

23. L. A. Farina, X. Bai, C. Kurdak, S. Chakrabarti and P. Bhattacharya, “Study of Quantum Hall Edge States with a Single Electron Transistor Coupled to an Antidot,” Electronic Properties of Two-Dimensional systems(EP2DS), Albuquerque, NM, July 2005.

22. S. Chakrabarti, X. H. Su, G. Ariyawansa, A. G. U. Perera and P. Bhattacharya, “Room Temperature Operation of Resonant Tunneling Quantum Dot Infrared Detectors”, Conference on Lasers and Electro-Optics, Baltimore, MD, May 2005.

21. P. Bhattacharya, M. Holub, J. Shin and S. Chakrabarti, (INVITED) “Spin-polarized Semiconductor Light Sources,” Photonics West 2005, San Jose, CA, January 2005.

20. P. Bhattacharya, M. Holub, J. Shin and S. Chakrabarti, A. R. Kovsh, S. S. Mikhrin, I. L. Kresnikov, A. V. Kozhukov and N. N. Ledentsov, (INVITED) “High Performance Quantum Dot Lasers”, US-Korea Conference, Research Triangle Park, NC, August 2004.

19. J.N. Gleason, M.E. Hjelmstad, V.D. Dasika, S. Fathpour, S. Chakrabarti, P.K. Bhattacharya, and R.S. Goldman, “Nanometer-Scale Studies of Point Defect Distributions in GaMnAs Films”, Gordon Research Conference on Defects in Semiconductors, Colby-Sawyer College, New London, NH, July 2004.

18. M. Holub, S. Fathpour, S. Chakrabarti, J. Topol’ancik, P. Bhattacharya and Y. Lei, “High-temperature spin-polarized quantum dot light-emitting diodes,” Device Research Conference, Notre Dame University, Notre Dame, IN, June 2004.

17. S. Fathpour, Z. Mi, S. Chakrabarti, P. Bhattacharya, A. R. Kovsh, S. S. Mikhrin, I. L. Krestnoikov, A. V. Kozhukov and N. N. Ledenstov, “Characteristics of High-Performance 1μm and 1.3μm Quantum Dot Lasers: Impact of p-doping and Tunnel Injection,” Device Research Conference, Notre Dame University, Notre Dame, IN, June 2004.

16. X. H. Su, A. D. Stiff-Roberts, S. Chakrabarti, J. Singh and P. Bhattacharya, “Resonant Tunneling Quantum Dot Infrared Photodetector (RT-QDIP): Separating Dark Current and Photocurrent,”Device Research conference, Notre Dame University, Notre Dame, IN, June 2004.

15. M. Holub, S. Chakrabarti, S. Fathpour, P. Bhattacharya, Y. Lei, T. D. Mishima, M. B. Santos, M. B. Johnson and D. A. Blom, “Mn-doped InAs self-organized quantum dos with Curie temperature above 300K,” Electronics Materials Conference, Notre Dame University, Notre Dame, IN, June 2004.

14. J.N. Gleason, M.E. Hjelmstad, V.D. Dasika, S. Fathpour, S. Chakrabarti, P.K. Bhattacharya, and R.S. Goldman, “Nanometer-Scale Studies of Point Defect Distributions in GaMnAs Films”, Electronics Materials Conference, Notre Dame University, Notre Dame, IN, June 2004.

13. J. N. Gleason, M. E. Hjelmstad, V. D. Dasika, , S. Fathpour, S. Chakrabarti, P. Bhattacharya and R. S. Goldman, “Coss Sectional Scanning Tunneling Microscopy Studies of Mn distribution in Ga1-xMxAs,” 31st Conference on the Physics and Chemistry of Semiconductor Interfaces, Kailua-Kona, HI, January 2004.

12. A. D. Stiff-Roberts, S. Chakrabarti, P. Bhattacharya, and S. Kennerly, “Tailoring of Quantum Dot Infrared Photodetector Performance with AlAs/GaAs Superlattice Barriers,” Lasers and Electro-Optics Society Meeting, Tucson, AZ, October 2003.

11. P. Bhattacharya, S. Fathpour, S. Chakrabarti, M. Holub and S. Ghosh, (INVITED) “Application of Dilute Magnetic Semiconductors and Quantum Dots to Spin Polarized Light Sources,” Mater. Res. Soc. Symp. Proc., Boston , 2003, 794, (2003) T8-1.

10. S. Chakrabarti, A. D. Stiff-Roberts, P. Bhattacharya, and S. Kennerly, “Heterostructures for Achieving Very Large Responsivity in InAs/GaAs Quantum Dot Infrared Photodetectors,” North American Conference on Molecular Beam Epitaxy, Keystone, CO, September 2003.

9. S. Chakrabarti, K. Moazzami, S. Fathpour, P. Bhattacharya and J. Phillips, “Pulsed Laser Annealing of Self-Organized InAs/GaAs Quantum Dots,” Electronics Materials Conference, Salt Lake City, UT, June 2003

8. A. D. Stiff-Roberts, S. Chakrabarti, S. Kennerly, and P. Bhattacharya, “High-responsivity, polarization-sensitive, 70-layer InAs/GaAs quantum dot infrared photodetector,” Conference on Lasers and Electro-Optics, Baltimore, MD, June 2003.

7. P. Bhattacharya, A. Stiff-Roberts, S. Chakrabarti, S. Krishna, C. Fischer, T. Norris and J. Uriyama, (INVITED) “Carrier Dynamics in self-organized In(Ga)As/Ga(Al)As quantum dots and their application long wavelength sources and detectors”, Compound semiconductors2002 Institute of Physics Conference Series 174, pp. 117-124, 2003.

6. P. Bhattacharya, A. Stiff-Roberts, S. Chakrabarti, S. Kennerly, and S. Krishna, (INVITED) “Quantum Dot Inter-sublevel Transition-Based Devices,” Nano-Optoelectronics Workshop, Berlin, Germany, July 2002.

5. S. Chakrabarti and S. Dhar, “Current components in a Cu2S-PSi junctions,” 10th International Workshop on Physics of Semiconductor Devices, New Delhi, India, December 1999.

4. S. Chakrabarti and S. Dhar, “Photoresponse of CdO/Porous Si junction,” 1st International Conference on Computes and Devices for Communication, Calcutta, India, January 1998.

3. S. Chakrabarti and S. Dhar, “Temperature dependent behavior of chalcogenide thin-film contacts on porous silicon,” International Conference on Fiber Optics and Photonics – PHOTONICS’96, Madras, India, December 1996.

2. S. Chakrabarti and S. Dhar, “A Chalcogenide- Porous Si Photodiode,” 3rd International Conference on Semiconductor Material and Technology, New Delhi, India, December 1996.

1. S. Chakrabarti and S. Dhar, “Ohmic Contacts to Porous Silicon by electroless nickel plating,” 8th International Workshop on Physics of Semiconductor Devices, New Delhi, India, December 1995.

20. S. Chakrabarti, “Quaternary Capped Nanoscale In(Ga)As/GaAs Quantum Dot based Devices for High Temperature Infrared Detection” , International Workshop on Physics of Semiconductor Devices (IWPSD) 2011, JMI, New Delhi, December 2011.

19. S. Chakrabarti, “Quaternary Capped Nanoscale In(Ga)As/GaAs Quantum Dot based Devices for High Temperature Infrared Detection” International Conference on Trends in Optics and Photonics (ICONTOP 11), University of Calcutta, December 7-9, 2011

18. S. Chakrabarti, “Quaternary Capped Nanoscale In(Ga)As/GaAs Quantum Dot based Devices for High Temperature Infrared Detection” , Indian Vacuum Society symposium on thin films: science and technology (TFST) 2011, BARC, Mumbai, November 9-12, 2011.

17. S. Chakrabarti, “Quantum dot infrared detectors and its potential for future IR detector applications,” International Conference on contemorary trens in optics and opto-electronics, Indian Institute of Space Science and Technology, Thirunvanthapuram, India, January 17-19, 2011.

16. S. Chakrabarti, “Molecular Beam epitaxial growth of InAs/GaAs Quantum Dot Heterostructures and the impact of annealing on strain-coupled Quantum Dot Heterostructure,” Indo-Italian Advanced Level Workshop on semicondctor nanostructures, Ultra thin films and applications, Anna University, Chennai, India, September 8-10, 2010.

15. S. Chakrabarti, “Molecular Beam epitaxial growth of In(Ga)As/GaAs Quantum Dot Heterostructures for High Temperature Infrared detection”, International Workshop on Physics of Semiconductor Devices 2009 (IWPSD 2009), New Delhi, India, December 14-17, 2010.

14. S. Chakrabarti, “Molecular Beam Epitaxial Growth and Characterization of Nano-scale In(Ga)As/GaAs based Quantum Dot Heterostructures,” SEMI-NANO, University of Calcutta, Calcutta, India, June 13-14 2008.

13. S. Chakrabarti, “Molecular Beam Epitaxial Growth and Characterization of InAs-GaAs Bi-layer Quantum Dots,” IUMRS-ICAM 2007, IISC Bangalore, Banglore, India October 2007.

12. S. Chakrabarti, “High Temperature Quantum Dot-based Infrared Sensors”, International Conference on Sensors and Related Networks(SENNET 07), Vellore, December 12-14, 2007.

11. S. Chakrabarti, “Quantum Dot Infrared Photodetector for High Temperature Imaging Applications,” Dept. of Radip-Physics and Electronics, University of Calcutta, 4th August 2006

10. S. Chakrabarti, “Quantum Dot Infrared Photodetector for High Temperature Imaging Applications,” Dept. of Electrical Engineering, Indian Institute of Technology, Mumbai, 21th July 2006

9. S. Chakrabarti, “Quantum Dot Infrared Photodetector for High Temperature Imaging Applications,” Dept. of Electrical Engineering, Indian Institute of Technology, Chennai, 17th July 2006

8. S. Chakrabarti, “Quantum dot Infrared Photodetectors”, School of Physical Sciences, Dublin City University, Dublin, Ireland, 23rd March 2006.

7. S. Chakrabarti, “Nano-scale Quantum Dot-based Devices for High Temperature Infrared Detection and Spintronic Applications,” Department of Physics, Lancaster University, UK, 1st February, 2006.

6. S. Chakrabarti, “Quantum Dot Infrared Photodetector for High Temperature Imaging Applications,” Dept. of Physics., University College Cork, Cork, Ireland, November 29th, 2005

5. S. Chakrabarti, “Quantum Dot Infrared Photodetector for High Temperature Imaging Applications,” National Chao Tung University, Taipei, Taiwan, October 26th, 2005

4. S. Chakrabarti, “Quantum Dot Infrared Photodetector for High Temperature Imaging Applications,” Academia Sinica, Taipei, Taiwan, October 25th, 2005

3. S. Chakrabarti, “Quantum Dot Infrared Photodetector for High Temperature Imaging Applications,” Dept. of Elec. Engr. & ComputerSc., University of Waterloo, ON, Canada, October 17th, 2005

2. S. Chakrabarti, X. H. Su, A. D. Stiff-Roberts and P. Bhattacharya, “Quantum Dot Infrared Photodetectors,” III-V IR Detector workshop, Army Research Laboratory, Baltimore, MD, April 2005.

1. S. Chakrabarti, A. D. Stiff-Roberts, P. Bhattacharya and S. Kennerly, “Heterostructures for Achieving Very Large Responsivity in InAs/GaAs Quantum Dot Infrared Photodetector,” International Conference on Computers and Devices for Communication (CODEC 2004), Calcutta, India, January 2004.

3. P. Bhattacharya, A. D. Stiff-Roberts, X. H. Su, S. Chakrabarti and C. H. Fischer, “Intersubband Transition in Quantum Dots,” published in Intersubband Optoelectronic Devices, Edited by R. Paiella and O. Manasreh, McGraw-Hill, New York (2005)..

2. A. D. Stiff-Roberts, S. Chakrabarti, X. H. Su and P. Bhattacharya, “III-V Quantum Dot for High-Operating Temperature, Mid-Infrared Photodetectors,” Laser Focus World, May 2005.

1. P. Bhattacharya, A. D. Stiff-Roberts and S. Chakrabarti, “Mid-Infrared Quantum Dot Photodetectors,” Book Series Springer Series in Optical Sciences, Publisher Springer Berlin / Heidelberg,ISSN 0342-4111 (Print) 1556-1534 (Online),Volume 118/2006.

Prof. Colin Stanley Dept. of Electronics and Electrical Engineering University of Glasgow, UK

Dr. Adrienne Stiff-Robert Dept. of Electrical and Computer Engineering Duke University, USA

Dr. Sanjay Krishna Center for High Technology Material University of New Mexico, USA

Dr. Jamie D. Phillips Dept. of Electrical Engineering and Computer Science University of Michigan, USA

Prof. Nigel Browning Dept. of Chemical Engineering and Material Science University of California Davis, USA

Dr. Siddharta Ghosh Dept. of Electrical and Computer Engineering University of Illinois at Chicago, USA

Dr. Tetsuya D. Mishima Dept. of Physics and Astronomy University of Oklahoma