Veeresh Babu, Sumantra Seth and A.N.Chandorkar,“Design of RF Tuner for Cable Modem application”,Proc. 17th International Conference on VLSI Design, 7th to 9th January 2004,Mumbai, India.
Srinjoy Mitra and A.N.Chandorkar, Design of Rail-to-Rail CMR with 1Volt Supply, Proc. 17th International Conference on VLSI Design, 7th to 9th January 2004,Mumbai, India.
Rajeshwar Sable, Ravi Saraf, R. Parekhji and A.N.Chandorkar BIST technique for Selective detection of NPSFs in Memories,(Poster paper). Proc. 17th International Conference on VLSI Design, 7th to 9th January 2004,Mumbai, India.
S.J.Vaidya, D.G.Borse, D.K.Sharma and A.N.Chandorkar.Isochronal Annealing Effects on Neutron Radiation Induced Trapped charge”Proc of 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits, Singapore, July 2003
S.J.Vaidya, D.K.Sharma, A.M.Shaikh and A.N.Chandorkar, ” Neutron Induced Degradation in Nitrided Pyrogenic Field Oxide MOS Capacitors“, Nuclear Instruments and Methods in Physics Research B, 194, pp311-318, 2003
Ravi Saraf, R. Parekhji and A.N.Chandorkar, “Architecture for Programmable Memory BIST, VLSI Design And Test Workshops 2001, Bangalore, August 16-18, 2001.
S.R.Shevgaonkar, A.N.Chandorkar and Dinesh Sharma,” Optically Controlled Microwave Phase shifter using Mach-Zender Interferometer Geometry, Microwave and Optical Technology Lett.28, pp15-21, 2001.
S.R.Shevgaonkar, A.N.Chandorkar and D.K.Sharma,”Microwave Transfer through an optically excited microstrip gap”, Proc. Symp. On Advances in Microwave and Light wave Tech.pp239-242, 1998.
S.R.Shevgaonkar, A.N.Chandorkar and D.K.Sharma,”Analysis of cylindrical Semiconductor Antenna”, Proc. International Conference on Computers and Devices for Communications, CODEC-98, pp53-56, 1998
S.R.Shevgaonkar, A.N.Chandorkar and D.K.Sharma,”Analysis of photo-induced Semiconductor Antenna”, PHOTONICS-98, pp223-226, 1998.
D.G.Borse, S.J. Vaidya and A.N.Chandorkar,” Study of interface trap generation due to high field stressing and its temperature dependence in 2.2 nm Gate Dielectrics”, IEEE Trans. Electron Devices, vol.49( no.4) April 2002 .
D.G.Borse, Manjula Rani K.N., A.N.Chandorkar, J.Vasi, V.Ramgopal Rao, B.Cheng, and J.C.S Woo.,” Optimisation and Realization of sub 100nm channel Length lateral Asymmetric p-MOSFETs”, IEEE Trans. Electron Devices, vol. 49(no.6), June 2002
D.G.Borse, S.J.Vaidya and A.N.Chandorkar, ”Comparison of 4 nm Gate Dielectrics Grown in O2 and N2O ambient on the basis of SLIC and Interface State generation due to Field stressing” Proceedings of International Conference on Communications, Computers and Devices (ICCCD-2000)”IIT Kharagpur,vol.1, pp257-260, Dec.2000.
D.G. Borse, S.J.Vaidya and A.N.Chandorkar, “Study of high quality Ultra thin Oxides for scaled MOS devices from Reliability point of view” Proc. of National Seminar on VLSI System, Design and Technology (VSDT-2000),pp24-27,Dec.2000.
D.G.Borse, S.J.Vaidya, and A.N.Chandorkar, “Comparison of 4 nm.dry and N2O Grown Gate dielectrics from reliability point of view”, 43rd DAE Solid State Physics Symposium, Mumbai, Dec.2000.
Pallavi Krishnamurthy, A N Chandorkar, “Growth and study of High-K Ta2O5 Films Deposited by Ta Sputtering Followed By its Thermal Oxidation, Proceedings of the Eleventh International Workshop on the Physics Semiconductor Devices, 2001, Vol2, pp.1307-1309.
Pallavi Krishnamurthy, and A N Chandorkar, “Reliability studies of 100 nm. Ta2O5 films, used as high-K dielectric in MOS Devices with and without nitridation in NH3, Proc.of the International conference on Micro and Nano Engineering, 2001. Grenoble, France, pp1307-1309
Pallavi Krishnamurthy and A. N. Chandorkar, “Ta2O5: A Potential Candidate for future DRAM generations in VLSI”, Proceedings of National Conference on Advanced Computing, 2002. pp.23-27.
S.J.Vaidya, B.G.Tiwari, D.G.Borse, A.N.Chandorkar, D.K.Sharma, and A.M.Shaikh, Neutron Irradiation Effects on Nitrided Pyrogenic Field Oxide”, 43rd Department of Atomic Energy Solid State Physics Symposium 2000, December 2000.
S.J.Vaidya, B.G.Tiwari, D.G.Borse, A.N.Chandorkar, D.K.Sharma, and A.M.Shaikh, “ Non –Ionising radiation effects on MOS structures, International Conference on Communications, Computing and Devices (ICCCD-2000), pp 163-165, December 2000.
M.Y.Joshi, B.K.Sarkar and A.N.Chandorkar, “ Design and fabrication of Microwave Resonator using Cr.-Au film on Al2O3 substrate and HTSC Film on LaAl2O3 substrate and their comparison, International Conference on Communications, Computing and Devices (ICCCD-2000), pp 337-339, December 2000.
A.N.Chandorkar and Yogesh J.Pitkar,” MOSFET Reliability Simulation using Fast Timing Simulator ILLIAD”, Proc. of the International Conference on Quality, Reliability and Control (ICQRC-2001), Mumbai, Dec.2001.
Anil Thosar and A.N.Chandorkar,”Combined effect of Temperature and Humidity on Thin SiO2 films”, Proc. of the International Conference on Quality, Reliability and Control (ICQRC-2001), Mumbai, Dec.2001.
K.T.Oomman Tharkan, A.N.Chandorkar and S.S.S.P.Rao,”Development of an abstract model for Non-volatile Static Random Access Memory”, Defence Science Journal, December 2003
R.M. Vadjikar, A.Nath, and A.N.Chandorkar,”Growth and Formation Model of Porous Silicon”, Nanostructures Materials vol.8,173,(1997)
Ranjeet Ranade, Sanjay Bhandari and A.N. Chandorkar, “VLSI Implementation of Artificial Neural Network Based Digital Multiplier and Adder,” Proc. 9th International Conference on VLSI Design, Bangalore, India, (1996)
B.M. Deb and A.N. Chandorkar, Theory of hopping transport of holes in amorphous SiO2,” J. Appl. Phys. 77, 5248 (1995)
B.M.Deb and A.A. Diwan and A.N.Chandorkar, “Quantum Mechanical transport of holes in Silicon Dioxide”, Proc. of the Eighth International Workshop on Semiconductor Devices, New Delhi (1995)
R.M.Vadjikar, A.N.Chandorkar and D.K.Sharma,”Diffusion limited Aggregation Model application to Porous Silicon Growth,” Nanostructures Materials, vol.5,273,(1995)
A. Mallik, A.N. Chandorkar and J. Vasi, “Capture cross-section of hole traps in Reoxidized nitrided oxide measured by irradiation,” Solid - State Electronics 38, 1851 (1995)
S.S. Moharir, A.N. Chandorkar and J. Vasi, “Data and Modelling of HCl Oxidation of Silicon,” Journal of the Institution of Engineering (India) 76, 2 (1995)
A. Shanware, N. Godambe, J. Vasi, A.N. Chandorkar and A.Das, “Modelling and Characterisation of Commercial CMOS IC’s Under Radiation,” Proc. of the Eighth International Workshop on Physics of Semiconductor Devices, New Delhi (1995)
R.M.Vadjikar, R.M.Nandedkar, D.D.Bhawalkar.R.Dussane, and A.N.Chandorkar Fabrication and Study of Porous Silicon morphology by SEM techniques, J.Material Science Letters, vol. 13.222,(1994)
R.M.Vadjikar, B.Jain, D.D.Bhawalkar, R.V.Nandedkar, R.Sriniwasa, and A.N.Chandorkar, “Effects of Chemical Treatment in HF and NH4F solutions on Photoluminescence of Porous Silicon,” Material Science and Engineering B,Vol.23, L13,(1994)
A. Mallik, J. Vasi and A.N. Chandorkar, “A Study of Radiation Effects on Reoxidized Nitrided Oxide MOSFETs, Including Effects on Mobility, Solid State Electron, 36,1359 (1993)
A. Mallik, J. Vasi and A.N. Chandorkar, “The nature of the hole traps in Reoxidized nitrided oxide gate dielectrics,” J. Appl. Phys. 74, 2665 (1993)
A. Mallik, J. Vasi and A.N. Chandorkar, “Electron Trapping during Irradiation in Reoxidized Nitrided Oxide,” IEEE Trans. Nucl. Sci. NS-40, 1380 (1993)
A. Mallik, J. Vasi and A.N. Chandorkar, “Hole traps in RNO gate dielectrics,”Proc. of the Seventh International Workshop on the Physics of Semiconductor Devices, New Delhi (1993).
A. Mallik, V. Ramgopal Rao, A.N. Chandorkar and J. Vasi, “Trap generation upon Irradiation in RNO gate dielectrics,” Proc. of the Seventh International Workshop on the Physics of Semiconductor Devices, New Delhi (1993)
A. Mallik, A.N. Chandorkar and J. Vasi, “Electron trapping in RNO during irradiation, 30th IEEE Nuclear and Space Radiation Effects Conference, Snowbird, USA(1993)
A.J.Choksi, R.Lal, and A.N.Chandorkar,” Electrical Properties of Silicon Dioxide Films grown by Inductively coupled R.F.Plasma Anodisation”, Solid State Electronics, vol34, No. 7,765,(1991).
S.V. Kolluri, A.N. Chandorkar and A. Dhaul, “Indium Doping of Silicon Using an Evaporated Indium Film,” J. Vac. Sci. Technology (1993)
V.A. Surlekar, U.B. Desai and A.N. Chandorkar, “VLSI Implementation of FIR Digital Filter using Residue Number System Arithmetic,” Texas Instruments Technical Journal, Vol9, No 4, 47 (1992)
A.N. Chandorkar, A.J. Choksi and C. Elizabeth, “Influence of RF Plasma Anneal on Dry and Pyrogenic oxides under radiation,” Proc. of 23rd IEEE Semiconductor Interface Specialist Conference, San Diego, USA, (1992)
K.Ramesh, A.Agarwal, A.N.Chandorkar, and J.Vasi,”Role of Electron Traps in the Radiation Hardness of Thermally Nitrided Silicon Dioxide,” IEEE Electron Device Lett.,Vol.12,No.12,(1991)
R.M. Patrikar, A.Mallik, L.Vijayraghvan, R.Lal. A.N.Chandorkar, “Flat band Voltage shift due to Irradiation of Pyrogenic Oxide,” Proc. of the Sixth International Workshop on Semiconductor Devices, New Delhi (1991)
A.J.Choksi, R.Lal, and A.N.Chandorkar,” Electrical Properties of Silicon Dioxide Films grown by Inductively coupled R.F.Plasma Anodisation” ,Solid State Electronics, vol34, No. 7,765,(1991).
M.H.Madhusudan Reddy, S.R.Jawalekar, and A.N.Chandorkar, “Analogy between Electrical and Structural properties of Electron -Beam deposited SnO2“,Thin Solid Films, 187,171.(1990)
M.Madhusudan Reddy, S.R.Jawalekar, and A.N.Chandorkar, “The Effects of Heat treatment on the Structural Properties of Electron - Beam Evaporated SnO2 Films” , Thin Solid Films, 169,117,(1989)
K.Ramesh, A.N.Chandorkar, and J.Vasi,”Study of Traps in Silicon Dioxide due to Mobile Sodium Ions at the Si -SiO2 Interface,” J.I.E.T.E., Vol.33, No.1,(1987)
Urvish Medh, A.N. Chandorkar and J.M. Vasi, “Some Development in Systolic Structures,” CAD Workshop at SCL, Chandigarh,(1985)
Anant Adke, A.N. Chandorkar, P.S. Subramanian and S.S.S.P. Rao, “Placement and User Interface for a Gate Array design system,” Workshop on CAD at SCL, Chandigarh, (1985)
Jitendra Apte, A.N. Chandorkar, P.S. Subramniam and S.S.S.P. Rao,Hierarchical Gate-Array Router,” Workshop on CAD at SCL, Chandigarh, (1985)
Sudha V. Kolluri, A.N. Chandorkar and Prakash R. Apte, “Studies of Indium doping for Infra-red Sensors,” III rd International Workshop an Physics of Semiconductor Devices I.I.T. Madras, (1985)
K. Ramesh, A.N. Chandorkar, J.M. Vasi, “Study of Sodium - related Electron Traps in SiO2 by B-T Stressing,” III rd International Workshop an Physics of Semiconductor Devices, I.I.T. Madras, (1985)
A.N. Chandorkar, V.T. Karulkar and K.V. Ramanathan, “Dependence of Partial Pressure on Pyrogenics Growth of Silicon Dioxide,J.Elect.Chem.Soc.2, P 415(1985)
A.N. Chandorkar, A.S. Vengurlekar and K.V. Ramanathan, “X-Ray Photoelectron Spectroscopy Study of Chlorine Incorporation in Thermally Grown HCl Oxides on Silicon,” Thin Solid Films, 114, 285, (1984)
A.S. Vengurlekar, A.N. Chandorkar and K.V. Ramanathan, “MOS C-V Characteristics and dielectric properties of Ion - Implanted Thermal Oxides on Silicon”, Phy. Stat. Solidi (a), 81, (1984)
A.N. Chandorkar, V.T. Karulkar and D.K. Sharma, “Anomalous behaviour of VLSI compatible Thin Silicon dioxide Films,” II nd International Workshop on Physics of Semiconductor Devices, New Delhi, (1983)
A.N. Chandorkar, Avinash Joshi and S. Pai, “Study and Growth of Phosphorous doped oxides as diffusion source,” Silver Jubilee Symposium on Electronics and Communication in 80’s, I.I.T. Bombay, (1983)
A.N. Chandorkar and V.T. Karulkar, “Study and Growth of Pyrogenic oxides for CMOS Technology,” I st International Conference on Physics of Semiconductor Devices, New Delhi, (1981)
A.N. Chandorkar and Prakash R. Apte, “On Life - time Characteristics in PIN diodes,” International Symposium on Microwaves and Communication, I.I.T. Kharagpur,(1981)
A.N. Chandorkar and Prakash R. Apte, Fabrication of 2000 V. PIN diode,”International Symposium on Microwaves and Communications, I.I.T. Kharagpur,(1981)
A.N. Chandorkar, Prakash R. Apte and M.C. Kumar, “Self Aligned Schottky Barrier diode fabrication using Lift - off Technique,” DAE Symposium, Hyderabad, (1980)
A.N. Chandorkar and M.M. Hasan, “Fabrication of transmission lines in Silicon for Monolithic microwave integrated circuits,” IETE Symposium,Nov 1978, New Delhi.
P.S. Bhatnagar and A.N. Chandorkar, “Radiation resistance of Dipole Antenna with an unsymmetrical displaced feed points by method of moments,” J. Inst. Engg., Vol. 36, ET-2, Dec. 1975
P.S. Bhatnagar and A.N. Chandorkar, “Method of moments for radiation Resistances of Non-linear dipole antennas having transversally displaced feed oints,” J.I.E.R.E., 24 March, 1975.
B.R. Singh, A.N. Chandorkar and B.R. Marathe, “Surface State Distribution and Ion Migration in Thermally Grown Silicon Dioxide Films,” Biannual Conference of Electrochemical Society (U.S.A.) at Sanfransisco (U.S.A.), (1974)
A.N. Chandorkar, W.S. Khokle and Amarjit Singh, “J-V Characteristics of Tunnelling Schottky Barriers,” International Journal of Electronics, (1974)
A.N. Chandorkar, W.S. Khokle and Amarjit Singh, “Band Structure effects in Calculations of J-V characteristics of tunnelling Schottky Barriers,” Proc. of Symposium on Solid State Devices, Univ. of Calcutta, Calcutta, (1972)
A.N. Chandorkar, W.S. Khokle and Amarjit Singh, “Ohmic contacts to GaAs,” Solid State Microwave Devices Symposium, Proc. Of Symposium Univ. of Roorkee, Roorkee, (1971)