1.2 Thin Films of PbTiO3
on <100> silicon were first reported
from our group by
using si-doped PbTiO3
target. This resulted in highly c-axis oriented films even at low temperatures
like 625C. This is very crucial for the silicon VLSI technology as it allows
very low thermal budgets around 650C.
In the field of PbTiO3 thin films the following new ideas will be
evaluated. We are working towards improving the failure of FE in films
(fatigue after about 1 million cycles) through better grain growth and
grain boundary control, ultimately leading to epitaxial films and hence
increase the fatigue failure limit by several orders of magnitude.