List of Publications ,
D. Sharma, G. Gautier, and G. Merckel, ``A high voltage S.O.S. MOS circuit,''
in Digest of Technical Papers ESSCIRC-77, p. 174, 1977.
D. Sharma, J. Gautier, and G. Merckel, ``A high voltage circuit for driving
liquid crystal displays,'' IEEE Journal of Solid State Circuits,
vol. SC-13, p. 375, 1978.
D. Sharma, J. Gautier, and G. Merckel, ``Negative dynamic resistance in MOS
devices,'' IEEE Journal of Solid State Circuits, vol. SC-13, p. 378,
1978.
P. Raghavan and D. Sharma, ``A general purpose IEEE-488 interface,''
Journal of I.E.T.E., vol. 28, p. 140, 1982.
D. Sharma, ``Computer aids for V.L.S.I. design,'' in Digest of Invited
Papers CSI-82, p. 31, 1982.
D. Sharma and K. Ramanathan, ``Modeling thermal effects on MOS I-V
characteristics,'' IEEE Electron Device Letters, vol. EDL-4, p. 362,
1983.
D. Sharma, ``Comments on a negative drain conductance property in super thin
buried channel MOSFET on a buried insulator,'' IEEE Trans. Electron
Devices, vol. ED-31, p. 1004, 1984.
D. Sharma and K. Ramanathan, ``Modification of MOST I-V characteristics by
self heating,'' Solid State Electronics, vol. 27, p. 984, 1984.
C. Kim, S. Goodwin-Johannson, and D. Sharma, ``Constant current contours plots
for the description of short channel effects in MOS transistors,''
IEEE Trans. Electron Devices, vol. ED-33, p. 1619, 1986.
D. Sharma, S. Goodwin-Johansson, D. Wen, C. Kim, and C. Osburn, ``A 1 micron
CMOS technology with low temperature processing,'' in Digest of Papers
I International symposium on Ultra Large scale Integrated Circuit Science and
technology, Philadelphia PA U.S.A., pp. 49-63, 1987.
C. Osburn, T. Brat, D. Sharma, N. Parikh, W.-K. Chu, D. Griffis, S. Corcoran,
and S. Lin, ``The effects of tittanium silicide formation on dopant
redistribution,'' in Digest of Papers I International symposium on Ultra
Large scale Integrated Circuit Science and technology, Philadelphia PA
U.S.A., pp. 402-433, 1987.
D. Sharma, ``Submicron CMOS technology,'' in Proceedings of IV
International Workshop on the Physics of Semiconductor Devices, 1987.
C. Osburn, T. Brat, D. Sharma, D. Griffis, S. Corcoran, S. Lin, W.-K. Chu, and
N. Parikh, ``The effects of tittanium silicide formation on dopant
redistribution,'' Journal of Electrochemical Society, vol. 135,
pp. 1490-1504, 1988.
D. Sharma, K. Narasimhan, S. Kumar, B. Arora, W. Paul, and W. Turner, ``Current
transport in a-Si:Ge alloy,'' Journal of Applied Physics, vol. 65,
pp. 1996-1999, 1989.
S. Chakravarty, S. Subramanian, D. Sharma, and B. Arora, ``Deep level
admittance spectroscopy of Dx centers in Sn doped AlGaAs,''
Journal of Applied Physics, vol. 66, p. 3955, 1989.
D. Sharma and K. Narasimhan, ``Automated electrical characterisation of
semiconductors,'' Indian Journal of Pure and Applied Physics, vol. 27,
p. 382, 1989.
B. Lakshmi, K. Chalapati, A. Srivastava, B. Arora, S. Subramanian, and
D. Sharma, ``Gallium Arsenide photo MESFETS,'' IEEE Trans. Electron
Devices, vol. ED-37, p. 1234, 1990.
D. Sharma and K. Narasimhan, ``Analysis of high frequency capacitance in
amorphous Si - crystalline Si heterojunctions,'' Philosophical
Magazine, vol. B-63, p. 543, 1991.
D. Sharma, K. Narasimhan, N. Periaswamy, and D. Bapat, ``Temperature dependence
of the electron drift mobility in doped and undoped amorphous silicon,''
Phys. Rev., vol. B-44, p. 12806, 1991.
S. Prabhu, K. Narasimhan, and D. Sharma, ``Comments on the steady state
photocarrier grating technique to measure diffusion lengths,'' Journal
of Applied Physics, vol. 71, p. 5727, 1992.
A. Phanse, D. K. Sharma, A. Mallik, and J. Vasi, ``Carrier mobility degradation
in MOSFETs due to oxide charge,'' J. Applied Physics, vol. 74,
p. 757, 1993.
M. Reddy and D. Sharma, ``Optimization of growth conditions of dry thermal
oxides for radiation hard applications,'' in Proceedings of the VII
International Workshop on the Physics of Semiconductor Devices, p. 328,
Narosa Publishing House, New Delhi, 1993.
S. Ekbote, D. Tambe, P. Zaman, H. dangat, M. Khare, P. Sinha, M. Rodd,
N. Bhukhanwala, J. Vasi, D. Sharma, and A. Das, ``Simulation of radiation
effects in MOSFETS,'' in Proceedings of the VIII International
Workshop on the Physics of Semiconductor Devices, 1995.
V. R. Rao, D. K. Sharma, and J. Vasi, ``Neutral trap generation under
irradiation in reoxidized nitrided oxide gate dielectrics,'' Solid State
Electronics, vol. 43, p. 1467, 1996.
V. R. Rao, W. Hansch, H. Baumgartner, I. Eisele, D. K. Sharma, and J. Vasi,
``Charge trapping behaviour in deposited and grown thin mos gate
dielectrics,'' in Proc. of E-MRS 1996 Spring Meeting, Strasbourg,
France, 1996.
S. Subbaraman, D. K. Sharma, and A. Das, ``Predicting degradation of irradiated
mos devices by monte carlo simulation of dispersive transport of
holes/H ions in silicon di oxide,'' Solid State Physics
(India), vol. 40(C), p. 265, 1997.
S. Subbaraman, A. Das, and D. K. Sharma, ``HOTMOS: A 2-D MOS device
simulator for hot carrier effects,'' in Proceedings of the International
Workshop on Physics of Semiconductor Devices, 1997.
D. Sharma, S. Ekbote, P. Zaman, S. Subbaraman, A. Das, and J. Vasi, ``Device
simulation for radiation and hot carrier effects,'' in Proceedings of
the International Workshop on Physics of Semiconductor Devices, 1997.
S. Subbaraman, D. K. Sharma, J. Vasi, and A. Das, ``A monte carlo approach for
incorporation of memory effect in switched gate bias experiments,'' J.
Applied Physics, vol. 83(6), p. 3419, 1998.
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