My GIF image! dinesh


Email Address: dinesh@ee.iitb.ernet.in]

Address for Correspondence

Resume:

Research Interests:

Research work undertaken:

Courses offered:

Publications:

Dinesh Sharma obtained his M.Sc. from B.I.T.S. Pilani and his Ph.D. from the Tata Institute of Fundamental Research, University of Bombay. He was with the Solid state Electronics group at T.I.F.R. during 1971-1991 except for 1976-78, when he was a visiting scientist at L.E.T.I., Grenoble, France and 1985-87, when he was with the Microelectronics Center of North Carolina in the U.S.A. He has been at the EE deptt. of IIT Bombay since 1991, where is currently a Professor. <\p>

Dr. Sharma's interests are in the area of MOS device modeling, VLSI design and technology. He has worked in the areas of technology development, process and device simulation, electro-thermal modeling and characterization of MOS devices. 50 papers in these areas. <\p>

Dr. Sharma maintains close contact with the microelectronics industry in India. He is a consultant to many leading VLSI industries, and has conducted training courses for them in the areas of VLSI technology and design. <\p>

He is a senior member of IEEE and serves on the editorial board of Pramana, the journal of Physics published by the Indian Academy of Science. <\p>

Semiconductor Devices, VLSI Design, Embedded Systems

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[ 1997-98 I EE 425 IC Design and Technology EE 705 Modern Electronic Design Techniques 1997-98 II EE 310 Electronic Design Project Lab EE 672 Microelectronics laboratory

List of Publications ,

D. Sharma, G. Gautier, and G. Merckel, ``A high voltage S.O.S. MOS circuit,'' in Digest of Technical Papers ESSCIRC-77, p. 174, 1977.

D. Sharma, J. Gautier, and G. Merckel, ``A high voltage circuit for driving liquid crystal displays,'' IEEE Journal of Solid State Circuits, vol. SC-13, p. 375, 1978.

D. Sharma, J. Gautier, and G. Merckel, ``Negative dynamic resistance in MOS devices,'' IEEE Journal of Solid State Circuits, vol. SC-13, p. 378, 1978.

P. Raghavan and D. Sharma, ``A general purpose IEEE-488 interface,'' Journal of I.E.T.E., vol. 28, p. 140, 1982.

D. Sharma, ``Computer aids for V.L.S.I. design,'' in Digest of Invited Papers CSI-82, p. 31, 1982.

D. Sharma and K. Ramanathan, ``Modeling thermal effects on MOS I-V characteristics,'' IEEE Electron Device Letters, vol. EDL-4, p. 362, 1983.

D. Sharma, ``Comments on a negative drain conductance property in super thin buried channel MOSFET on a buried insulator,'' IEEE Trans. Electron Devices, vol. ED-31, p. 1004, 1984.

D. Sharma and K. Ramanathan, ``Modification of MOST I-V characteristics by self heating,'' Solid State Electronics, vol. 27, p. 984, 1984.

C. Kim, S. Goodwin-Johannson, and D. Sharma, ``Constant current contours plots for the description of short channel effects in MOS transistors,'' IEEE Trans. Electron Devices, vol. ED-33, p. 1619, 1986.

D. Sharma, S. Goodwin-Johansson, D. Wen, C. Kim, and C. Osburn, ``A 1 micron CMOS technology with low temperature processing,'' in Digest of Papers I International symposium on Ultra Large scale Integrated Circuit Science and technology, Philadelphia PA U.S.A., pp. 49-63, 1987.

C. Osburn, T. Brat, D. Sharma, N. Parikh, W.-K. Chu, D. Griffis, S. Corcoran, and S. Lin, ``The effects of tittanium silicide formation on dopant redistribution,'' in Digest of Papers I International symposium on Ultra Large scale Integrated Circuit Science and technology, Philadelphia PA U.S.A., pp. 402-433, 1987.

D. Sharma, ``Submicron CMOS technology,'' in Proceedings of IV International Workshop on the Physics of Semiconductor Devices, 1987.

C. Osburn, T. Brat, D. Sharma, D. Griffis, S. Corcoran, S. Lin, W.-K. Chu, and N. Parikh, ``The effects of tittanium silicide formation on dopant redistribution,'' Journal of Electrochemical Society, vol. 135, pp. 1490-1504, 1988.

D. Sharma, K. Narasimhan, S. Kumar, B. Arora, W. Paul, and W. Turner, ``Current transport in a-Si:Ge alloy,'' Journal of Applied Physics, vol. 65, pp. 1996-1999, 1989.

S. Chakravarty, S. Subramanian, D. Sharma, and B. Arora, ``Deep level admittance spectroscopy of Dx centers in Sn doped AlGaAs,'' Journal of Applied Physics, vol. 66, p. 3955, 1989.

D. Sharma and K. Narasimhan, ``Automated electrical characterisation of semiconductors,'' Indian Journal of Pure and Applied Physics, vol. 27, p. 382, 1989.

B. Lakshmi, K. Chalapati, A. Srivastava, B. Arora, S. Subramanian, and D. Sharma, ``Gallium Arsenide photo MESFETS,'' IEEE Trans. Electron Devices, vol. ED-37, p. 1234, 1990.

D. Sharma and K. Narasimhan, ``Analysis of high frequency capacitance in amorphous Si - crystalline Si heterojunctions,'' Philosophical Magazine, vol. B-63, p. 543, 1991.

D. Sharma, K. Narasimhan, N. Periaswamy, and D. Bapat, ``Temperature dependence of the electron drift mobility in doped and undoped amorphous silicon,'' Phys. Rev., vol. B-44, p. 12806, 1991.

S. Prabhu, K. Narasimhan, and D. Sharma, ``Comments on the steady state photocarrier grating technique to measure diffusion lengths,'' Journal of Applied Physics, vol. 71, p. 5727, 1992.

A. Phanse, D. K. Sharma, A. Mallik, and J. Vasi, ``Carrier mobility degradation in MOSFETs due to oxide charge,'' J. Applied Physics, vol. 74, p. 757, 1993.

M. Reddy and D. Sharma, ``Optimization of growth conditions of dry thermal oxides for radiation hard applications,'' in Proceedings of the VII International Workshop on the Physics of Semiconductor Devices, p. 328, Narosa Publishing House, New Delhi, 1993.

S. Ekbote, D. Tambe, P. Zaman, H. dangat, M. Khare, P. Sinha, M. Rodd, N. Bhukhanwala, J. Vasi, D. Sharma, and A. Das, ``Simulation of radiation effects in MOSFETS,'' in Proceedings of the VIII International Workshop on the Physics of Semiconductor Devices, 1995.

V. R. Rao, D. K. Sharma, and J. Vasi, ``Neutral trap generation under irradiation in reoxidized nitrided oxide gate dielectrics,'' Solid State Electronics, vol. 43, p. 1467, 1996.

V. R. Rao, W. Hansch, H. Baumgartner, I. Eisele, D. K. Sharma, and J. Vasi, ``Charge trapping behaviour in deposited and grown thin mos gate dielectrics,'' in Proc. of E-MRS 1996 Spring Meeting, Strasbourg, France, 1996.

S. Subbaraman, D. K. Sharma, and A. Das, ``Predicting degradation of irradiated mos devices by monte carlo simulation of dispersive transport of holes/H ions in silicon di oxide,'' Solid State Physics (India), vol. 40(C), p. 265, 1997.

S. Subbaraman, A. Das, and D. K. Sharma, ``HOTMOS: A 2-D MOS device simulator for hot carrier effects,'' in Proceedings of the International Workshop on Physics of Semiconductor Devices, 1997.

D. Sharma, S. Ekbote, P. Zaman, S. Subbaraman, A. Das, and J. Vasi, ``Device simulation for radiation and hot carrier effects,'' in Proceedings of the International Workshop on Physics of Semiconductor Devices, 1997.

S. Subbaraman, D. K. Sharma, J. Vasi, and A. Das, ``A monte carlo approach for incorporation of memory effect in switched gate bias experiments,'' J. Applied Physics, vol. 83(6), p. 3419, 1998.

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