| Juzer M. Vasi |
Juzer M. Vasi obtained his B.Tech. from the Indian Institute of Technology, Bombay in 1969 and the Ph.D. from The Johns Hopkins University in 1973. He taught at The Johns Hopkins University and the Indian Institute of Technology, Delhi, before moving to the Indian Institute of Technology, Bombay in 1981, where he is currently a Professor. He was Head of the Department of Electrical Engineering during 1992-94. Dr. Vasi's research interests are in the area of MOS devices and technology. He has worked on the growth and characterization of MOS insulators, radiation effects in MOS devices, degradation and reliability of MOS devices, and modelling and simulation of MOS devices. He has published and presented over 100 papers in these areas, and acted as a referee for leading Indian and international journals. Dr. Vasi has interacted widely with industries in India and abroad, and been involved with many sponsored projects from government agencies and industries. He was Editor of the IEEE Transactions on Electron Devices for the MOS Devices and Technology area for over 5 years during 1997-2003. He is a Distinguished Lecturer (DL) of IEEE Electron Devices Society, Fellow of IETE, a Fellow of the Indian National Academy of Engineering, and a Senior Member of IEEE.
email:vasi@ee.iitb.ac.in