The MOS transistor: Pao-Sah and Brews models; Short channel effects in MOS transistors. Hot-carrier effects in MOS transistors; Quasi-static compact models of MOS transistors; Measurement of MOS transistor parameters; Scaling and transistors structures for ULSI; Silicon-on-insulator transistors; High-field and radiation effects in transistors.;The bipolar transistor: Ebers-Moll model; charge control model; small-signal and switching characteristics; Graded-base and graded-emitter transistors; High-current and high- frequency effects; Heterojunction bipolar transistors; Junction FETs; JFET, MESFET and heterojunction FET.
N. D. Arora, MOSFET Models for VLSI Circuit Simulation, Springer-Verlag, 1993.
E. J. Roulston, Bipolar Semiconductor Devices, McGraw-Hill, 1990.
S. M. Sze, Physics of Semiconductor Devices, (2e), Wiley Eastern, 1981.
Y. P. Tsividis, Operation and Modelling of the MOS Transistor, McGraw-Hill, 1987.
E. Takeda, Hot-carrier Effects in MOS Trasistors, Academic Press, 1995.