Basic device models: Theory of bipolar and MOS transistors. Small-signal models of bipolar and MOS transistors, Gummel-Poon model.;High current effects in diodes: Dependence of lifetime on high-level injection, non-uniform current distribution under high current injection.;Power biploar transistors: Onset of high-current effects in transistors; Theories of Kirk effect, crowding, pinch-in effects, second breakdown, etc; Emitter geometries for high current and HF operation.;SCR : Theories of operation; Relation between shorted emitter and dv/dt ratings; Gate turn-off devices, inverter grade SCRs, special diffusion techniques for SCRs. Power VMOS devices.;Heat transfer in power devices; Power MOS devices : VMOS & DMOS device structure and models; device packaging.
S.M. Sze, Physics of Semiconductor Devices, 2nd ed., Wiley, 1981.