Pre-requisties Physics of Nanoelectronic Devices Ior equivalent, undergraduate-level engineering mathematics linear algebra, differential equations, Fourier analysis (MA 106, MA108, MA205, MA207 or equivalent), engineering physics (PH103 or equivalent), and post-graduate level solid-state devices (EE661 or equivalent).;Atomic structure: crystal structure, defects in solids.; Electronic structure: energy bands in solids, electron-electron interactions, bandstructure calculations, bandstructure engineering, Mechanical properties: Phonon engineering, elasticity and strain engineering, Semi-classical transport properties: dynamics of Bloch electrons, Zener tunneling and its device applications, the Boltzmann Transport Equation and its moments, drift-diffusion, hydrodynamic equations and Monte-Carlo simulation of semiconductor devices, thermoelectric and magnetoelectric phenomena.; Nanoscale transport properties: scattering formalism, ballistic nano-transistors, Greens functions, Feynman paths, quantum-interference devices.; Optical properties: Maxwells equations in dielectric media, polarization in insulators, ferroelectrics, polarons and polaritons, direct and indirect transitions in semiconductors, excitons, optoelectronic and photovoltaic devices, frequency response of metals skin-depth, plasma frequency, plasmonic devices.; Magnetic properties: Diamagnetism and paramagnetism of ions and electrons, magnetic interactions and ferromagnetic ordering, mean field theory, symmetry-breaking and phase transitions, spintronic devices.