The presentation highlights the efforts of understanding the 15 kV SiC IGBTs for power conversion. The medium voltage gate driver development and its evaluation up to 11 kV; the IGBT switching characterization and heat-run evaluation process; the subsequent demonstration of two-level and three-level converters with 10 kV dc bus will be discussed. The presentation also includes different mechanisms to extract better performance from these state-of-the-art IGBTs. Finally, demonstration results of these IGBTs on a 4.16kV, 3 phase, Solid State Transformer (SST) will be briefly discussed.
Arun Kadavelugu is currently working for ABB Corporate Research, Raleigh, USA. He has completed his PhD (Power Electronics) from North Carolina State University in 2014. His advisory committee includes Prof. Subhashish Bhattacharya, Prof. Jayant Baliga and Prof. Iqbal Husain. Prior to joining in PhD, he was a Senior Project Associate at IIT Kanpur working on a NaMPET project. He completed M.Tech (Power Electronics) from IIT Kanpur in the year 2007, and B.E (Electrical Engineering) from Osmania University Campus in the year 2005. He has worked on gate driver development for a 15-kV SiC IGBT, characterizing 10-kV SiC MOSFETs and 15-kV SiC IGBTs, and two-level and three-level converter design and demonstration using these high-voltage devices.