High-fidelity two-qubit entanglement operations pose new challenges for spin qubits. Although spin orbit-coupling (SOC) can simplify entanglement via electric fields and microwave photons, it exposes conventional spin qubits to electrical noise. Here we devise a gate-tunable single-acceptor spin-orbit qubit in silicon having a sweet spot where the electric dipole spin resonance (EDSR) is maximized, and the qubit is simultaneously insensitive to dephasing from low-frequency electrical noise. The sweet spot protects the qubit during rapid single-qubit EDSR and two-qubit dipole-dipole mediated operations, and is only obtained by treating SOC non-perturbatively. More than 10^4 one-qubit and 10^3 two-qubit operations are possible in the predicted relaxation time, as necessary for surface codes. Moreover, circuit quantum electrodynamics with single dopants is feasible in this scheme, including dispersive single-spin readout, cavity-mediated two-qubit entangement, and strong Jaynes-Cummings coupling. Our approach provides a scalable route for controlling electrical and photon-mediated interactions between spins of individual dopants in silicon.
Dimitrie Culcer obtained his PhD from the University of Texas at Austin in 2005. He worked as a postdoctoral research fellow first at Argonne National Laboratory between 2006-2008, and subsequently at the University of Maryland, College Park, 2008-2010. He became a faculty member at the University of Science and Technology of China in Hefei in 2010, where he was a member of the International Center for Quantum Design of Functional Materials. In 2013 he moved to the University of New South Wales in Sydney where he is currently a Senior Lecturer.