Graphene is the smallest and most versatile atomic scale laboratory available for physicists, chemists and materials researchers to date. From technology point of view what is appreciable is that graphene is compatible with well-established the complementary metal oxide semiconductor (CMOS) processes and hence its implication in day-to-day electronics devices is becoming reality. In the first decade of this technology most of the proof-of-the-concept devices have been fabricated and measured in vacuum. Due to the atomic layer thickness of graphene, its electronic structure gets affected easily by atmospheric humid air, organic solvents, photo and electron beam resists, reactive ions, etc. fabrication processes. For real life application, encapsulation of the electronic circuits is an essential step in the device fabrication and packaging. The first part of this talk will provide insights into solving industrial scale problems in graphene based field effect device performance. The air stable graphene transistors operation needs encapsulation to passivate from the environmental effects. It is achieved by growing high quality aluminum oxide and its implications in functional devices such as integrated inverters, ring oscillators and RF transistors working in GHz frequency ranges will be discussed. Thus encapsulated devices are robust towards additional microelectronic processes, storable and measureable consistently in air. The second part will confer on van der Waals heterostructure devices using boron nitride and graphene. The 2D BN/G/BN heterostructure devices fabricated with 1D electrical contacts showed outstanding performance to produce record high sensitive Hall sensors at room temperature.
Dr. Sagade completed graduation and post-graduation from Shivaji University, Kolhapur in 2003 and 2005, respectively. He then started working on a DRDO funded project on copper sulfide ammonia gas sensor at room temperature at Dr. B.A.M.Univ. Aurangabad. Simultaneously he worked at IUAC New Delhi on pelletron for ion beam irradiation of materials. He obtained his Ph.D. from Dr. B.A.M.Univ. Aurangabad in 2009. For six months worked as CSIR-SRF. Immediately after thesis submission started working at JNCASR Bangalore and earned DST-NANO postdoc fellowship. After working here for 3 years now at AMO GmbH working on Graphene Flagship Project, till Jan.2015. Dr. Sagade has published 28 international journal publications and successfully submitted 3 US patents applications. He is also a reviewer for many journals.