The continuous scaling of Complementary-Metal-Oxide-Semiconductor (CMOS) devices to increase the performance and functionality of modern microelectronic-based systems has stimulated research in alternative materials and device structures. The addition of new materials and new device concepts lead to new interactions at the atomic scale often resulting in unexpected electrical characteristics of the devices. To physically understand the interactions leading to such electrical characteristics, metrology of these devices is required to determine layer compositions, layer thickness, dopant distributions, interface characteristics etc. and, all this in 3-D. Atom Probe Tomography is a powerful metrology tool and provides a way to probe the atomic distribution of the sample in 3- D and sub-nanometer resolution (0.5Å – 3Å)
Ir. Arul Kumar received the M.Tech. degree in Nanoelectronics in 2011 from Amity University, India. He is currently in his final stages of acquiring a Ph.D. degree in Physics both from the KU Leuven, Belgium and IMEC, Belgium. His main research interest are growth and metrology of thin films and semiconductor devices. He is author/co-author of about 17 publications, which also includes a patent on growth of thin a-Si:H layers for application in photovoltaics. His Ph.D. research, titled “Qualitative and quantitative analysis of compound semiconductors using Atom probe Tomography”, aims to gain insight on the various aspects of Atom Probe tomography which effect data quality and also a fundamental understanding of light interactions with nanoscale structures during atom probe measurements.