Photovoltaic technology prevalently relies on p-n junction for device fabrication. However, p-n junction solar cells are neither thermodynamically nor practically optimum. The talk will introduce to the audience; a device structure termed ‘Carrier Selective Contact ‘(CSC) device. CSC devices allow selective extraction of carriers by utilizing inversion and accumulation of surfaces, thereby circumventing the necessity of p-n junction. A few of the practical implementation of CSC devices include silicon heterostructure technology, metal-insulator-semiconductor devices, and organic solar cells. In this talk, amongst the CSC technologies, the focus will be on silicon heterostructure. The talk will cover in detail the device physics of silicon heterostructure technology. The emphasis will be on the equilibrium band diagram, carrier transport at the ordered/disordered interface and photogeneration-recombination mechanisms in the device. Additionally, the talk will include initial results on the open-circuit voltage of non-metallized flexible solar cells utilizing silicon heterostructure technology.