Understanding electron transport in semiconductor devices has led to the unprecedented development of the electronic industry and human progress. Facing the improbable challenge of further miniaturization of electronic devices, Spintronics has been steadily emerging as an alternate technology for the next generation of devices, where instead of the charge of the electron, spin is exploited. In this context, understanding transport mechanisms that involve spin of the electron are significant. Here I present experimental data of semiconductor nanostructure devices where spin-related transport is observed. Transport in one-dimensional devices has attracted wide interest since the discovery of conductance quantization in a short one-dimensional ballistic constriction defined by gating techniques in a GaAs/AlGaAs heterostructure in 1988. Interest has since grown steadily, mainly due to several theoretical predictions of many body effects due to Coulomb interactions. In this talk, I shall present experimental evidence of spin-related transport in quantum wires. Starting with the discovery of an additional conductance structure at 0.7(2e2 /h) called the 0.7 structure  in ballistic quantum wires which is understood to be a many body spin effect, experimental evidence for a fully spin polarized state achieved by manipulating the symmetry of the potential confinement using a scanning gate will be presented. Several theoretical models were proposed to explain the 0.7 structure including spin polarization, Kondo effect, spin-incoherent transport, and Wigner crystallization. Recent experimental results from quantum wires fabricated with an additional top gate to examine the effect of confinement strength and density show that spin waves are reflected in a certain energy range, giving rise to a structure at e2 /h due to spin-incoherent transport.
Current Position: 2012 – Till date: Senior Research Associate. Five year (2012-2017) EPSRC funded project “Nanoelectronic Based Quantum Physics: Technology and Applications” PI - Professor Sir Michael Pepper. Affiliation: London Centre for Nanotechnology & Department of Electrical Engineering, University College London. Field of Work: Low temperature electrical transport measurements in semiconductor nanostructures. Academic qualifications: Ph. D (Physics): 1993-98, Cavendish Laboratory, Cambridge University, UK. Academic career: Junior Research Fellow: 1987-1991, Indian Institute of Technology, Madras, India Research Assistant: 1992-1993, Indian Institute of Science, Bangalore, India Post-Doctoral Research Fellow: 1998 – 2000, Cavendish Laboratory, Cambridge University, UK Royal Society Research Fellow: 2000-2008, Cavendish Laboratory, Cambridge University, Senior Research Associate: 2008 September – 2009 February, Cavendish Laboratory, Cambridge University. Associate Professor: 2009 – 2012, Department of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon (Under World Class University Programme of Govt. of Korea.) Research: Condensed matter physics,Nanoelectronics: Design, fabrication and electrical transport measurements of low dimensional electron systems, Quantum transport in nanostructure devices – Quantum wires. Highlights: Spin polarized state in quantum wires: 0.7 Conductance Anomaly, Spin incoherent transport in quantum wires, Double row formation in quantum wires at weak confinement.