Silicon has dominated the microelectronics industry for the past several decades and the future Si technology for high volume manufacturing remains strong with novel devices like fin shaped Field Effect Transistors (FinFETs). The research and development in silicon technology has changed substantially in the last decade due to the increasing costs of development and consolidation of the industry. Microelectronic industry is now focusing on FinFETs for sub 20nm gate devices. In this regime, direct optical lithography fails to work due to the FIN pitch being below optical resolution. FINFETs have the advantage of high drive currents with low off currents that would meet the requirements for sub 20nm technologies. The term FINFET was coined in 1999 for this non-planar trigate device and identified as the right technology below 20 nm node products. This talk discusses FinFETs technology & and its manufacturability with a focus on the current trends in the industry foundries.
Dr. Lakshmanna Vishnubhotla completed M.Sc in Nuclear Physics from Andhra University (1978) and M.Tech in Materials Science from IIT Mumbai (1982). Subsequently, Dr. Vishnubhotla obtained his Ph.D on Silicon Devices from Tata Institute of Fundamental Research in 1988 and later he pursued a post-doctoral fellowship at Yale University, CT in USA. Dr. Vishnubhotla has been working in silicon semiconductor technology development for the last 25 years and had worked in USA, France and Germany. Currently he is a technical lead in Globalfoundries, Malta, USA working on 7nm FINFET technology development.