Gallium Nitride devices have received a lot attention because of its immense potential for high frequency, power and optoelectronic devices. GaN has a large bandgap of 3.4 eV and covers a wide bandgap range of 0.7-6.4 eV through its other family members InN and AlN. I will discuss about GaN based high electron mobility transistors for RF applications. The design, fabrication, characterization of these devices will be discussed for S, C, X and Ku bands. The various challenges will be elaborated. Power amplifier are then designed using these devices by using appropriate back-end processing. I will also discuss about the carrier and photon dynamics in GaN nanostructrue LEDs. The fundamental physical processes will be elaborated through investigation by transient absorption spectroscopy and photo-luminescence.
Prof. Dipankar Saha completed his B. Tech from Jadavpur University, M. Tech from IIT Bombay and Ph.D from University of Michigan. He has worked briefly at IBM and Intel before joining IIT Bombay as an Assistant Professor. He is currently working as an Associate Professor. His work involves various electronic and optoelectronic devices.