We demonstrate a novel method for nanowire formation by natural selection during wet chemical etching in boiling Phosphoric acid. It is observed that wire lateral dimensions of sub-10 nm and lengths of 700 nm or more have been naturally formed during the wet etching. The dimension variation is controlled through etching times wherein the underlying cause is the merging of the nearby crystallographic hexagonal etch pits. The emission processes involving excitons are found to be efficient and lead to enhanced emission characteristics. We have observed superluminescent behaviour of the LEDs formed on these nanowires. The gain offered by the material with the nanowire acting as a cavity shows lasing by coupling a mirror made of PMMA-air dielectric lateral stack. The present work thus provides an innovative and cost effective manner of device fabrication on the formed nanowires and proves the immediate performance enhancement achievable.
Debashree has obtained her B.Sc degree in Physics from Bethune College, Univ. of Calcutta, then went on to do her B.Tech specialization in RadioPhyscics and Electronics at the Univ. of Calcutta. She is currently working on her PhD thesis under the guidance of Prof. Dipankar Saha and Prof. Swaroop Ganguly at IIT Bombay, and IITB-Monash Research Academy joint venture, in the area of III-Nitride based light sources . She has worked on both spin and conventional light sources.