In this presentation, I would like to discuss the optimized results of the growth conditions of thin films of undoped ZnO, p-type Sb-doped ZnO and n-type Ga-doped ZnO materials grown by dual ion beam sputtering deposition system (DIBSD). Optimization of growth conditions in terms of optical, elemental, electrical, crystalline and morphological properties of these films has been performed. Photoluminescence (PL) spectroscopy, X-ray photoelectron spectroscopy (XPS), Hall measurements, X-ray diffraction (XRD), and Atomic force microscope (AFM) measurements were carried out to determine and correlate amongst optical, elemental, electrical, crystalline and morphological properties of these films, respectively. Subsequently, the results related to fabrication of Sb-ZnO/Cd-ZnO/Ga-doped ZnO heterojunction light emitting diode emanating blue at around 445 nm wavelength will also be shown in the presentation.
This is Sushil Kumar Pandey, a Ph.D. student in the discipline of Electrical Engineering at Indian Institute of Technology (IIT) Indore, India. I have done B.Tech degree in 2011 in electronics and communication engineering from Shri Mata Vaishno Devi University, Udhampur, Jammu. I was born on 15 may 1989 in village Gothwara of Faizabad district, Uttar Pradesh.