Advances in SiC and GaN devices are enabling power electronics applications with higher efficiency, power density, volumetric density cost effectively. The power electronics converter systems requires similar advances in magnetics materials and thermal management. We will highlight both SiC and GaN devices enabled converters and applications. Research trends in new SiC devices (Monolithically integrated SiC BiFET (Bidirectional MOSFET) to enable novel power converters will be discussed.
Subhashish Bhattacharya received his B.E. (Hons), M.E. and PhD degrees in Electrical Engineering from Indian Institute of Technology-Roorkee (formerly University of Roorkee), India in 1986, Indian Institute of Science (IISc), Bangalore, India in 1988, and University of Wisconsin-Madison in 2003, respectively. He worked in the FACTS (Flexible AC Transmission Systems) and Power Quality group at Westinghouse R&D Center in Pittsburgh which later became part of Siemens Power Transmission & Distribution, from 1998 to 2005. He joined the Department of Electrical and Computer Engineering at North Carolina State University (NCSU) in August 2005, where he is the ABB Term Professor, and also a founding faculty member and co-PI of NSF ERC FREEDM systems center (www.freedm.ncsu.edu), Advanced Transportation Energy Center [ATEC] (www.atec.ncsu.edu) and the newly established DOE initiative on WBG based Manufacturing Innovation Institute – PowerAmerica - at NCSU. He has authored over 250 peer-reviewed technical articles, 2 book chapters, and has 4 issued patents to his credit. A part of his PhD research on active power filters was commercialized by York Corp. for their air-conditioner chiller application. His research interests are Solid-State Transformers, MV power converters, FACTS, Utility applications of power electronics and power quality issues; high-frequency magnetics, active filters, and application of new power semiconductor devices such as SiC for converter topologies.