Insulated Gate Bipolar Transistor is a classic MOS-Bipolar Transistor device, and in Silicon, it has been the main power semiconductor device for over three decades now and will continue to be so for a long time to come. There are two lectures on the advances of IGBT: the first one covers the basics of the device leading up the latest approaches made today; this lecture will also cover a MOS Controlled thyristor technology, called the Clustered IGBT, which is emerging as a chip-for-chip replacement to IGBT. The second one covers the latest approaches termed as scaling rule for IGBTs. This lecture will cover various advances being made to bring IGBT technologies in line with Moore's law. Advances in both IGBT and CIGBT are addressed and an attempt is made to forecast further developments.
Professor E.M. Sankara Narayanan @ Shankar N Ekkanath Madathil was born in India, in 1962. He received his B.Sc, M.Sc degrees from PSG College of Technology, Coimbatore, M.Tech from Indian Institute of Science, Bangalore in India and Ph.D degree from the Cambridge University. He was a Maudslay Engineering Research Fellow of Pembroke College, Cambridge and Research Associate in Cambridge University between 1992 and 1994. Between 1994 and 2007, he was employed at De Montfort University as the Director of the Emerging Technologies Research Centre, which he set up to undertake research in microelectronics. Presently, he holds the Royal Academy of Engineering/Rolls Royce Professorship in Power Electronics Systems at Sheffield University. His research interests include semiconductor devices, integrated and discrete power devices and technologies, aspects relating to design for manufacturability, functional materials, thin film transistors and technology strategies in microelectronics. He has published over 200 articles and 8 patents (approved/pending approval) and has helped develop many innovative technologies towards manufacture. He is a Fellow of IET and IoP and a Senior Member of IEEE. He is involved in the technical program committees of ISPSD, ISPS, IWPSD and other international conferences. He is a member of the IEEE Ad Com committee in the area of compact modelling.