UV (Ultraviolet) detectors are devices that have a range of applications in medicine, space communication, plasma research, chemical and biological sensing and defense. Solid state UV photodetector cum with transistor are more efficient and can be easily incorporated in different type of novel micro/nanosystems with multifunctional applications. ZnO is recognized as a very promising optoelectronic material to fabricate high sensitivity UV photodetectors. ZnO nanostructures can be synthesized by a variety of techniques viz. hydrothermal growth, radio frequency sputtering, sol-gel, pulsed laser deposition, vapor-liquid-solid, chemical vapor deposition (CVD), thermal evaporation etc. In comparison to the other techniques, hydrothermal methods have the advantage of simple, inexpensive and environmental friendly processing. Hydrothermal technique was utilized for the facile growth of ZnO NRs network. The influence of various parameters viz. in-situ addition of salts like KMnO4, K2Cr2O7 and post growth thermal annealing were carried out in detail to understand their correlation with the optoelectronic properties of grown ZnO NRs. Further, the hydrothermally grown ZnO NRs were utilized for demonstrating the field effect transistors (FETs). Finally, high photosensitive FETs were demonstrated by coating a nanolayer of noble metals viz. gold (Au) and platinum (Pt) nanoparticles (NPs), utilizing the surface plasmon resonance (SPR) phenomena
Ashish Kumar received the Master’s degree (M. Tech.) in microelectronics and VLSI design from Kurukshetra University, Kurukshetra, India, in 2012, and submitted his Ph.D. thesis in discipline of Electrical Engineering, IIT Indore, India, in October 2016. He worked as a research intern at IIT Bombay from 6th Jan 2012 to 6th July 2012. His research interests include ZnO nanostructures and their applications.