In the recent years there has been significant progress in the area of crystalline silicon surface passivation, especially for solar cell application. High-quality passivation of the front and rear surface is key for achieving higher efficiency of crystalline silicon (*c*-Si) wafer solar cells. Thin films of thermal oxide, silicon nitride, amorphous silicon and recently aluminum oxide have successfully been used for this purpose. Based on experimental results achieved in SERIS, it will be shown that every industrially relevant silicon surface can now be effectively passivated, which is imperative for very high-efficiency silicon wafer solar cells. Together with the thermal stability and desired optical performance of these films in the solar cell devices the ideal surface passivation film for each specific c-Si surface can now be selected.
Dr Shubham Duttagupta was born in India and educated in India and Singapore. He holds Bachelor of Engineering (B.E.) and PhD degree in Electrical Engineering. His PhD research focused on the development of advanced multifunctional materials required for high-efficiency (industrial) larger-area silicon wafer solar cells. He has developed several processes that are currently considered for transfer into industrial production. In 2015 he won the ‘Institute of Microelectronics Prize’ by the National University of Singapore (NUS) for his excellent research contribution. In 2014 he won the ‘Most Outstanding Research Award’ at the European PV conference in the category ‘Wafer-Based Silicon Solar Cells and Materials Technology’. In the same year, for his PhD thesis, he was a runner-up for the prestigious SolarWorld Junior Einstein Award. Dr Duttagupta is the Head of the Monocrystalline Silicon Wafer Solar Cell group at SERIS managing a large R&D group working on multiple large R&D projects that are both government- & industry-funded.