In this talk, I will cover a broad range of topics related to the radiation effects of semiconductor devices in general, and related to single-event induced soft error in particular 1. radiation effects on semiconductor devices and estimation of soft-error rate. a)TCAD simulation using Cogenda and compact modeling of TID effects; i.Physics-based 3D TCAD simulation of TID effects ii.SPICE model of TID effects in CMOS transistor b) TCAD simulation of single-event effects semiconductor devices; i. Charge collection and funneling effects; ii. Charge sharing at multiple nodes; iii. Well potential collapse and parasitic transistors; iv. Domino-propagation of single-event latchup; v. Multi-Bit Upset (MBU) and clustered upset; c) Simulation of radiation effects in advanced CMOS technologies d) Simulation of radiation effects in silicon and compound power devices. 2. Radiation hardened memory and logic circuit design; a)Mitigation of TID effects in deep-submicron technologies; b)Mitigation of SEL effects; c)Hardening of flipflops against SEU and SET.
Dr. SHEN Chen received his Ph.D in Microelectronics from National University of Singapore. His research at NUS covered topics including CMOS reliability physics, device modeling and simulation,and novel non-volatile memory technology. He co-founded two research-oriented companies, Cogenda (Singapore) in 2008 and Ke Jing Da Electronics (Suzhou) in 2011, where he served as Director of Technology. His current research focus on multi-physics numerical simulation, radiation-effects in semiconductor devices and radiation-hardened design.He has author and co-authored over 40 technical papers in peer-reviewed journals and conferences. Dr Shen is also an adjunct lecturer at Fudan University, Shanghai, where he teaches a course on computational microelectronics.