Power engineering has been made a big progress by the development of various kind of semiconductor power devices for the past years. Regarding the semiconductor power devices, silicon devices, such as thyristor, GTO, MOSFET, and IGBT has been dominated the market, because of its low defect density and low cost. On the other hand, there has been significant progress in SiC and GaN devices recently, and they are now being introduced into advanced high-efficiency power conversion systems. In the meanwhile, Si power devices are still attractive for the large market, and therefore, innovation in the field of Si power devices is still desirable to achieve an energy-saving society. In this talk, recent progress on Si IGBT and GaN HEMT devices is explained.
Hiroshi Iwai received the B.E. and Ph.D. degrees in electrical engineering from the University of Tokyo and worked in the development of integrated circuit devices for 26 years in Toshiba. After retirement of Toshiba, he joined Tokyo Institute of Technology and engaged in the research of semiconductor device technology for 19 years. He is now an emeritus professor Tokyo Institute of technology, a vice dean and Distinguished Chair Professor, National Chiao Tung University, Taiwan, and D.J. Gandhi Distinguished Visiting Professor, IITB. He has authored and coauthored more than 1000 international journal and conference papers and 500 domestic (or Japanese) ones and the recipient of many IEEE awards. He served the President of the IEEE EDS, the Director of IEEE Division I and a member of IEEE Board. He is an IEEE Life Fellow, a fellow of JSAP, IEICE, and IEEJ.