Atomically thin semiconducting transition metal dichalcogenides (TMDCs) have attracted a lot of attention towards creating high performance devices. We have studied material synthesis using chemical vapor deposition (CVD) techniques and characterizations of monolayer molybdenum disulfide (MoS2) and tungsten diselenide (WSe2) 2D crystals. After short introduction of photodetectors based on individual semiconducting nanostructures (i.e. nanobelts and nanosheets), I will discussed the outlook of our recent studies including the broadband absorber, surface-enhanced Raman scattering (SERS) sensor and excitoplasmonic sensor based on thin TMDCs material. The developed permittivity model is introduced to represent the monolayer MoS2 for the design and simulation of MoS2 based devices. Furthermore simulation results on the implementation of monolayer MoS2 in a finite Bragg stack geometry and plasmonic nanoparticle decorated monolayer MoS2 will also be discussed.
Bablu Mukherjee is currently working as Post-doctoral Scientist at the George Washington University, Washington, DC, USA since March 2014. He received his B.Sc. degree in Physics from University of Calcutta, Kolkata, India in 2007 and the M.Sc. degree in Physics from the Indian Institute of Technology (IIT) Madras in 2009. He received his Ph.D. degree in Physics from the National University of Singapore (NUS) in 2013. After that he worked as Research Assistant in Electrical & Computer Engineering, NUS. His research interests include experimental studies on semiconducting nanostructures, nanofabrication, photodetectors and sensing properties of nanodevices, and the simulation of nanoplasmonics and nanophotonics.