Nanoscale complementary metal–oxide–semiconductor (CMOS) devices face today many fundamental limits in terms of performance and power consumption. Devices such as the Tunnel Field-Effect Transistor (TFET) have been already proposed as replacements of the standard CMOS for low-power applications to overcome the limitations of the latter. This presentation explains why a new device is needed for electronic applications. The limitations of the CMOS devices when the device scaling is performed are discussed first. Secondly, the operation principle of the TFET is explained by using quantum mechanics. It is shown that, the TFETs are excellent switches for ultra low-power applications that break the theoretical limit for switching of 60mV/dec imposed by CMOS. A second advantage of the TFET is the OFF state current that is extremely low. Finally, the state of the art in the development of these “green” devices is discussed in detail and it is shown that the performance of the TFETs can be improved by using several boosters.
Costin Anghel received the B.S. and M.S. degrees in Engineering from the Polytechnic Institute of Bucharest, Bucharest, Romania, in 1998, and 1999, and the Ph.D. degree from the Swiss Federal Institute of Technology, Lausanne, Switzerland in 2004. Dr. Anghel has been an IEEE member since 2008 and a “senior member” since 2012. He held a Post-Doctoral Fellow position at CEA-LETI, Grenoble, France between 2006 and 2008, being involved in the development of nanostructures using carbon nanotubes. Dr. Anghel has joined ISEP in 2008 as Assistant Professor. He holds the position of Associate Professor with ISEP, being currently the Head of LISITE-MINARC research team. In this capacity he conducts and supervises research projects in the area of simulation and modeling of the novel devices. His research interests are related to the TFETs, MOSFETs, non-volatile memories, CNTFETs and organic/molecular devices. Dr. Anghel is an expert of the “Nanoelectronics” section of the Observatory for Micro and Nano Technologies (www.omnt.fr).