In this talk, the main advantages of Silicon Heterojunction (SHJ) solar cells with respect to traditional crystalline silicon (c-Si) devices will be presented. In the SHJ technology the emitter and back contact are based on thin hydrogenated amorphous silicon layers deposited at low temperature ( < 300oC), typically by Plasma-Enhanced Chemical Vapor Deposition. An overview to the state-of-the-art of this technology will be presented, including the impressive conversion efficiency of 23.7% reported by Panasonic (formerly Sanyo) for the HIT (Heterojunction with Intrinsic Thin layer) structure. The talk will also discuss the main physical and technological aspects related to the fabrication of high-efficiency SHJ solar cells. Finally, the main activities developed in this field at the Polytechnic University of Catalonia will be presented.
Dr. Cristobal Voz was born in Barcelona (Spain) in 1972. He obtained the Ph.D. degree in Physics from the University of Barcelona in 2001. During his thesis, he studied the fabrication technology and physical modeling of thin-film microcrystalline silicon solar cells. Later on, he joined the Polytechnic University of Catalonia (UPC), where he became an Associate Professor in 2003 at the Department of Electronic Engineering. His main research interests are the physics and technology of semiconductor devices, with special focus on high-efficiency silicon heterojunction solar cells. To date, he has authored more than 50 research papers in scientific journals.