Dr. Mukesh V. Khare is a Director at IBM Research, leading semiconductor technology research for sub-14nm node at IBM's Nano Technology Research Center in Albany and T.J. Watson Research Center in Yorktown Heights, New York. He joined IBM in 1998 working on 0.18um SOI technology and has been actively pursuing research and development in CMOS technology at various engineering and management positions since then. Dr. Khare led the development and implementation of high-k metal gate technology starting from fundamental research to full implementation in 32nm technology node at IBM. As a technical champion, he led engineering team through development and qualification of the 90nm SOI technology from the basic definition to the transfer in 300mm manufacturing Fab and volume production. Dr. Khare is a recipient of the Outstanding Technical Achievement Award at IBM. He serves as technical committee member at the IEEE sponsored Symposia on VLSI Technology & is a senior IEEE member. He has authored and co-authored more than 55 research papers, holds several U.S. and international patents and is regularly invited to review IEEE Letters and Journal papers. Dr. Khare received his M.S., M. Phil., and Ph.D. degrees from Yale University, USA and M. Tech. degree from India Institute of Technology, Bombay all in Electrical Engineering.