3D-stacked multilayer nonvolatile memory crosspoint arrays can enable Storage Class Memory which aims to combine the high performance and reliability of solid-state memory with the low cost of nonvolatile storage. To make this concept a reality, the resistive memory element, such as Phase Change Memory (PCM), Resistive RAM (RRAM), etc. at each crosspoint intersection should be in series with an access device that is capable of high ON-state current density when selected, low OFF-state leakage when unselected, and which is also compatible with a Back-End-Of-the-Line (BEOL) IC fabrication process. In this talk, we will give an overview of our research on novel access devices based on Cu-containing Mixed Ionic Electronic Conduction (MIEC) materials. These devices not only meet all of the requirements listed above but also allow bipolar memory operation as a result of their highly nonlinear bidirectional current-voltage characteristics. We will show some experimental results on prototype MIEC access devices including studies of their speed, cycling endurance, and scalability.
Rohit Shenoy received a B.Tech. degree in Engineering Physics from the Indian Institute of Technology, Bombay and M.S. and Ph.D. degrees in Electrical Engineering from Stanford University. In 2005, he joined IBM Research - Almaden where he is a Research Staff Member. Dr. Shenoy’s research activities have mainly been in the area of nanoscale devices and technology specifically aimed towards realizing Storage Class Memory. He is part of a team that has developed a novel BEOL-compatible crosspoint memory access device based on Mixed Ionic Electronic Conduction (MIEC) materials. His other research interests include reconfigurable logic and non-Von Neumann computing.