The growing demand for clean electricity leads to an drastic increase in high efficient silicon-based solar cells. The way from current industrial standard silicon solar cells towards emerging cell structures is shown. The use of passivating contacts together with the so called interdigitated back contact (IBC) cell structure allows to approach the ultimate efficiency limit of 29.4 % for silicon. We will present the advantages of passivating contacts based on the polysilicon on oxide (POLO) technology compared to conventional metal semiconductor contacts. The most important benefits of the former are low contact resistivity and extremly low contact recombination.
Jan Krugener received the Diploma and Ph.D. degrees in electrical engineering from Leibniz University Hannover, Germany, in 2008 and 2012, respectively. He is a Senior Scientist at the Institute of Electronic Materials and Devices, Leibniz University Hannover. His research interests include fabrication and characterization of advanced high-efficiency silicon solar cells. The transfer from microelectronic technologies for photovoltaic applications is the main focus of his work.