CMOS technology has scaled down from micro-meter feature sizes to the nano scale regime in order to achieve lower power and higher performance devices and circuits. Device geometries have been aggressively scaled with the gate length (LG), gate dielectric thickness (Tox) and junction depth having been decreased by about three orders of magnitude in the last few decades. For lower OFF current (Ioff), a better gate control of the channel is needed in the OFF state. In order to meet the ON current (Ion) requirements, the threshold voltage (Vth) needs to be scaled with VDD. However, Ioff increases exponentially with Vth reduction. For this reason, it is desirable to explore device options that give rise to a sub-threshold swing value below the theoretical limit of 60 mV/dec. In a conventional MOSFET, SS is a non-scalable parameter and minimum subthreshold swing (SSmin) is 60mV/dec at room temperature. We have recently come up with nano-electro-mechanical switches to address the standby power problem in CMOS applications. In this work we show the requirements for such mechanical switches needed for CMOS and show a practical realization of one such switch in the CEN (IITBNFF) at IIT Bombay.