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Dipankar Saha

ASCII

Curriculum Vitae

Education

  • University of Michigan, Ph.D.
  • IIT Bombay, M. Tech
  • BE, Jadavpur University

Research Highlights

Experience

  • Professor, IIT Bombay, Powai, India, 2019
  • Associate Professor, IIT Bombay, Powai, India, 2015-2019
  • Assistant Professor, IIT Bombay, Powai, India, 2009-2015
  • Visiting Research Scientist University of Michigan, Ann Arbor, MI, Summer 2010
  • Research Engineer, Intel, Portland, 2008-2009
  • Research Associate, Solid State Electronics Laboratory, MI, Summer 2006
  • Teaching Assistant, EECS, IIT Bombay, India, 2003-2005
  • IBM India, 2001-2003

Major Honors

  • Associate, Indian Academy of Sciences, India 2011-2014
  • Nominated for the best doctoral thesis, University of Michigan, Ann Arbor, MI 2009
  • Rackham Predoctoral Fellow, University of Michigan, Ann Arbor, MI 2007-2008
  • Electrical Engineering and Computer Science Department Fellow, University of Michigan, Ann Arbor, MI 2005-2006
  • Tata Consultancy Services Fellow, Indian Institute of Technology, Bombay, India 2003-2005

Research Projects

Research Areas

  • Microelectronics, Nanotechnology
  • Novel and engineered materials
  • LEDs, lasers and detectors
  • Novel Transistors
  • RF transistor design, fabrication, characterization and modelling
  • Power electronic devices

Research Projects

  • GaN Technology and MMIC [2022-2024]
  • GaN Power HEMT Simulation and Optimization [2022-2023]
  • Underwater Object Detection [2022-2024]
  • GaN Based Power Amplifier - Supported by Bharat Electronics Limited [2020-2021]
  • Assessment of GaN Fab [2021]
  • High speed carrier and photo dynamics in GaN nano-structure LEDs and lasers and resulting effect in high frequency performance (DST) [2018-2021]
  • AlGaN/GaN Power Transistor Based Platform Technology and Modules for Smart Grid Applications - Supported by DST-MI [2018-2022]
  • Development of GaN HEMT Based Power Electronic Interfaces Enabled by Device-to-System Characterization and Modeling (Supported by MHRD & DST under IMPRINT) [2018-2021]
  • Indian Nanoelectronics Users Program-II (Supported by MeitY) [2016-2021]
  • Evaluate the effect of InGaN and AlGaN back barrier on high frequency performance of GaN based HEMTs - Supported by ASemiT, DRDO [2017-2018]
  • Development of Ohmic and Schottky Contacts on Gallium Nitride - Supported by Indian Space Research Organization (ISRO) [2015-2017]
  • Development of magneto-opto electronic integrated circuit chip - Supported by Bilcare Research [2014-2015]
  • Spintronic Devices Based on GaN Heterostructures and Materials (Supported by DST) [2013-2016]
  • GaN High Electron Mobility Transistor (part of Centre of Excellence in Nanoelectronics-II) - Supported by Department of Information Technology. [2011-2016]
  • Development and Fabrication of GaN/AlGaN HEMTs - Supported by Defence Research and Development Organization, India. [2012-13]
  • 3D Simulation of Metal Nanodot Memory - Supported by Semiconductor Research Corporation, USA. [2010-2012]
  • Modeling and Simulation of Advanced NVM Devices - Supported by Micron Technology, Inc, USA. [2010-2012]
  • Spintronic Devices using Electrical Spin Injection, Transport and Detection in GaAs - Supported by IRCC, IIT Bombay, India. [2009-2012]
  • Spin-Based Memory Device Using III-V and II-VI Semiconductors - Supported by Department of Science and Technology, India. [2009-2012]

Students

Ph.D Students

Advisor

Ongoing

  1. Shaizan Bhat
  2. Subhajit Basak
  3. Jyoti Sahu
  4. Kanchan Singh Rana
  5. Navneet Thakur
  6. Mahalaxmi Patil
  7. Arpit Sahu
  8. Netaji Suvachintak
  9. Prachi Pohekar
  10. Bazila Parvez
  11. Ankit Udai

Pre-synopsys Given

  1. Navneet Bhardwaj (Pre-syn)
  2. Shankar Kesarwani (Pre-syn)
  3. Vivek Surana (Pre-syn, Micron Singapore)

Completed

  1. Pratim Saha (Ph.D. (2022), Post-doc University of Chicago)
  2. Sreenadh Surapaneni (Ph.D. (2022), Intel)
  3. Tarni Aggarwal (Ph.D. (2021), Post-doc CEA France)
  4. Vikas Pendem (Ph.D. (2021), Intel)
  5. Pankaj Upadhyay (Ph.D. (2021), Post-doc Duke University)
  6. Jaya Jha (Co-advisor, Ph.D. (2021), Finwave Semiconductor USA)
  7. Bhanu Bhakta Upadhyay (Ph.D. (2021), Post-doc, IIT Bombay,Engaged in technology development)
  8. Shonal Chouksey (Ph.D. (2021), Applied Materials)
  9. Yogendra Kumar Yadav (Ph.D. (2021), Applied Materials)
  10. Mudassar Imam Yahya Meer (Ph.D. (2020), Micron Technology, USA)
  11. Akankhsa Rawat (Ph.D. (2020), Micron Technology, Singapore)
  12. Akhil Kumar S, (Ph.D. (2020), Post-doc at the University of Bristol)
  13. Sandeep Sankaranarayan, (Ph.D. (2018), Post-doc at UIC)
  14. Vishvendra Poonia, (Ph.D. (2018), Co-advisor, Post-doc Weizmann Institute of Science)
  15. Pragati Chaturvedi, (Co-advisor, Ph.D. (2017), Visiting Researcher UNICAMP)
  16. Kuldeep Takhar, (Ph.D. (2017), Infineon, Germany)
  17. Debashree Banerjee, (Ph.D. (2016), Post-doc at Uppsala University, Sweden)
  18. Rama Bhadra Rao Adari (Ph.D. (2014) , TSMC Taiwan)

Co-Advisor

  1. Subrat Kumar Pradhan
  2. Rajat Shukla
  3. Binit Mallick

M.Tech Students

  1. Manijith Pendota (213070103)
  2. Pradhi Kumar (M. Tech 2022, TSMC)
  3. Nagasai Goud Padamati (M. Tech, 2022, Intel)
  4. Rishikesh Meshram (DD 2022)
  5. Prabhanshu Chandra (M. Tech, IIT Bombay, 2021, Joined Intel)
  6. Mudimadugu Naresh Kumar (M. Tech, IIT Bombay, 2021, Joined Intel)
  7. Navya Sri G. (M. Tech, IIT Bombay, 2018, Joined Ph.D at Lund University)
  8. Manisha Kumari (M. Tech, IIT Bombay, 2016, Joined Bosch)
  9. Dolar Khachariya (M. Tech, IIT Bombay, 2015, Joined Ph.D at EPFL)
  10. Aakash Diwan (M. Tech, IIT Bombay, 2015, Joined Ganghi Jayanti Fellowship)
  11. Aakash Jain (M. Tech, IIT Bombay, 2014, Joined PhD at IITD)
  12. Nakul Pande (M. Tech, IIT Bombay, 2013, Joined Qualcomm)
  13. Arun V (M. Tech, IIT Bombay, 2013, Joined PhD in Germany)
  14. Tanmoy Pramanik (M. Tech, IIT Bombay, 2012, Joined Ph.D program at University of Texas)
  15. Abhisekh Kamath (M. Tech, IIT Bombay, 2012, Joined Intel Corp.)
  16. Prashant Singhal (M. Tech, IIT Bombay, 2012, Joined Sandisk)
  17. Kunal Naidu (DD, IIT Bombay, 2012)
  18. Lalit Agarwal (M. Tech, IIT Bombay, 2011, Joined NVIDIA)
  19. Kshitij Agarwal (M. Tech, IIT Bombay, 2011, Joined PhD program at Cornell University)
  20. Prantik Mahajan (M. Tech, IIT Bombay, 2010, Joined GLOBALFOUNDRIES Dresden)
  21. Sreenivas Subramanian (M. Tech, IIT Bombay, 2010, Joined Intel Corp.)

B.Tech Students

  1. Indrasen Bhattacharya (B. Tech, IIT Bombay 2012, Joined Ph.D program at University of Berkeley)
  2. Jithendra Anumula (B. Tech, IIT Bombay, 2014)
  3. Smarak Maity (B. Tech, IIT Bombay, 2015, Joined Ph.D at Harvard)

Publications

Journal Publications

  1. “Improved RF-DC Characteristics and Reduced Gate Leakage in GaN MOS-HEMTs using Thermally Grown Nb2O5 Gate Dielectric,” Navneet Bhardwaj, Bhanu B. Upadhyay, Bazila Parvez, Prachi Pohekar, Yogendra Yadav, Arpit Sahu, Mahalaxmi Patil, Subhajit Basak, Jyoti Sahu, Farheen Shamim Ahmed Sabiha, Swaroop Ganguly and Dipankar Saha, Physica Scripta (2022). [ https://doi.org/10.1088/1402-4896/aca438 ]
  2. “Room temperature single-photon emission from InGaN quantum dot ordered arrays in GaN nano-needles,” Pratim Kumar Saha, Kanchan Singh Rana, Navneet Thakur, Bazila Parvez, Shazan Ahmad Bhat, Swaroop Ganguly, and Dipankar Saha, Applied Physics Letters (2022). [ https://doi.org/10.1063/5.0111026 ]
  3. “Real-time observation of delayed excited-state dynamics in InGaN/GaN quantum-wells by femtosecond transient absorption spectroscopy,” Ankit Udai, Swaroop Ganguly, Pallab Bhattacharya, and Dipankar Saha, Nanotechnology 33, 475202 (2022). [ https://doi.org/10.1088/1361-6528/ac8a50 ]
  4. “Simplified inelastic electron tunneling spectroscopy based on low-noise derivatives,” Shankar Kesarwani, Shobhna Misra, Dipankar Saha, Maria Luisa Della Rocca, Indrajit Roy, Swaroop Ganguly and Ashutosh Mahajan, Scientific Reports volume 12, Article number: 19216 (2022). [ https://doi.org/10.1038/s41598-022-21302-4 ]
  5. “Modeling optical second harmonic generation for oxide semiconductor interface characterizatio”, Solid State Electronics, B. Mallick, D. Saha, A. Dutta, and S. Ganguly (2022). [ https://doi.org/10.1016/j.sse.2022.108502 ]
  6. “Performance improvement in AlGaN/GaN high electron mobility transistors by low-temperature ICP-CVD SiNx as gate dielectric and surface passivation,” V. Surana, S. Ganguly, and D. Saha, pssa Applications and Materials Science (2022). [ https://doi.org/10.1002/pssa.202200509 ]
  7. “Heat diffusion governing universal trend in saturation current and power in AlGaN/GaN high electron mobility transistors in pulsed operation,” B. Parvez, P. Pohekar, S. Ganguly, and D. Saha, Solid State Electronics (2022). [ https://doi.org/10.1016/j.sse.2022.108425 ]
  8. “Evidence of distributed energy border traps at Al2O3/p-diamond interface,” P. Pohekar, B. Parvez, S. Ganguly, and D. Saha, Diamond & Related Materials (2022). [ https://doi.org/10.1016/j.diamond.2022.109239 ]
  9. “Performance Improvement in NiOx-based GaN MOS-HEMTs,” M. Meer, P. Pohekar, B. Parvez, S. Ganguly, and D. Saha, Semuconductor Science and Technology (2022). [ https://doi.org/10.1088/1361-6641/ac77ad ]
  10. “High-performance GaN HEMTs with ION/IOFF ~1010 and gate leakage current <10-11 A/mm using Ta2O5 dielectric,” Bhanu B. Upadhyay, Sreenadh Surapaneni, Yogendra K. Yadav, Navneet Bhardwaj, Netaji Suvachintak, Swaroop Ganguly, and Dipankar Saha (2022). [ https://dx.doi.org/10.1002/pssa.202100839 ]
  11. “Low Leakage and High ION/IOFF Ratio in Partial Gated AlGaN/GaN Nanowire Field-Effect Transistors,” Akhil S. Kumar, Swaroop Ganguly, and Dipankar Saha, Phys. Status Solidi RRL (2022). [ https://doi.org/10.1002/pssr.202200100 ]
  12. “Reduced Auger Coefficient through Efficient Carrier Capture and Improved Radiative Efficiency from Broadband Optical Cavity: Mechanism for Potential Droop Mitigation in InGaN/GaN LEDs,” Tarni Aggarwal, Ankit Udai, Pratim K Saha, Swaroop Ganguly, Pallab K. Bhattacharya, Dipankar Saha, ACS Applied Materials and Interfaces (2022). [ https://doi.org/10.1021/acsami.1c20003 ]
  13. “True fractional dimensional nature of semiconductor nanostructures: Removing the anomaly in the estimation of quantum mechanical properties,” V. Pendem, S. Ganguly, and D. Saha, IEEE Transactions on Nanotechnology (2021). [ https://dx.doi.org/10.1109/TNANO.2021.3140185 ]
  14. “Thermally Grown Nb-oxide for GaN-Based Metal-Oxide-Semiconductor Devices,” N. Bhardwaj, B. Upadhyay, Y. Yadav, S. Surapaneni, S. Ganguly, and D. Saha, Applied Surface Science (2021). [ https://doi.org/10.1016/j.apsusc.2021.151332 ]
  15. “Gradual carrier filling effect in 'Green' InGaN/GaN quantum-dots: Femtosecond carrier kinetics with sequential two-photon absorption,” Udai, Ankit; Aiello, Anthony; Aggarwal, Tarni; Saha, Dipankar; Bhattacharya, Pallab, ACS Applied Materials & Interfaces (2021). [ https://doi.org/10.1021/acsami.1c11096 ]
  16. “Low-field mobility in an electrostatically confined 2D rectangular nanowires: Effect of density of states and phonon confinement,” Sreenadh Surapaneni, Jaya Jha, Vikas Pendem, Yogendra Kumar Yadav, Swaroop Ganguly, and Dipankar Saha, Nanotechnology (2021). [ https://doi.org/10.1088/1361-6528/ac1a3f ] [Invited]
  17. “Investigation of Ultrafast Carrier Dynamics in InGaN/GaN-based Nanostructures using Femtosecond Pump-Probe Absorption Spectroscopy,” Tarni Aggarwal, Ankit Udai, Debashree Banerjee, Vikas Pendem, Shonal Chouksey, Pratim Saha, Sandeep Sankaranarayanan, Swaroop Ganguly, Pallab Bhattacharya, and Dipankar Saha, physica status solidi (b) - basic solid state physics (2021). [ https://doi.org/10.1002/pssb.202100223 ][Invited]
  18. “Effect of Width Scaling on RF and DC Performance of AlGaN/GaN-Based Ku-Band Multi-finger 250 nm High Electron Mobility Transistor Technology”, J. Jha, S. Surapaneni, A. Kumar, S. Ganguly, and D. Saha, Solid State Electronics (2021). [ https://doi.org/10.1016/j.sse.2021.108138 ]
  19. “GaN-based complementary inverter logic gate using InGaN/GaN superlattice capped enhancement-mode field-effect-transistors”, J. Jha, S. Ganguly, and D. Saha, Nanotechnology 32, 315206 (2021).[ https://doi.org/10.1088/1361-6528/abfb99 ]
  20. “Improvements from SiC Substrate thinning in AlGaN/GaN HEMTs: Disparate Effects on Contacts, Access and Channel Regions”, Bazila Parvez, Jaya Jha, Pankaj Upadhyay, Navneet Bhardwaj, Yogendra Yadav, Bhanu Upadhyay, Swaroop Ganguly, and Dipankar Saha, IEEE Electron Dev. Lett. (2021). [ http://dx.doi.org/10.1109/LED.2021.3068863 ]
  21. “Carrier recovery from sub-bandgap states in a GaN-based quantum-confined structure: Identification of carrier reservoirs through femtosecond pump-probe spectroscopy”, T. Aggarwal, S. Ganguly, and D. Saha, The Journal of Physical Chemistry C 125, 3535 (2021).[ https://dx.doi.org/10.1021/acs.jpcc.0c09892 ]
  22. “Carrier-Induced Defect Saturation in Green InGaN LEDs: A Potential Phenomena to Enhance Efficiency at Higher Wavelength Regime”, Dhiman Nag, Tarni Aggarwal, Shreekant Sinha, Ritam Sarkar, Swagata Bhunia, Yi-Fan Chen, Swaroop Ganguly, Dipankar Saha, Ray-Hua Horng, Apurba Laha, ACS Photonics 8, 926 (2021). [ https://doi.org/10.1021/acsphotonics.0c01969 ]
  23. “Nanosecond pulsed-bias-actuated and exciton-dynamics-induced chirp in InGaN/GaN LEDs towards realizing electrically-tunable broadband light emitters”, Vikas Pendem, Pratim K. Saha, Shonal Chouksey, Swaroop Ganguly, and Dipankar Saha, Journal of Luminescence 229, 117703 (2021].[ https://doi.org/10.1016/j.jlumin.2020.117703 ]
  24. “Epi-Gd2O3-MOSHEMT: A potential Solution Towards Leveraging the Application of AlGaN/GaN/Si HEMT with Improved ION/IOFF Operating at 473 K”, Ritam Sarkar, Bhanu B. Upadhyay, Swagata Bhunia, Ravindra S. Pokharia, Dhiman Nag, S. Surapaneni, Jori Lemettinen, Sami Suihkonen, Philipp Gribisch, Hans-Jörg Osten, Swaroop Ganguly, Dipankar Saha, and Apurba Laha, IEEE Transactions on Electron Devices 68, 2653 (2021). [ http://dx.doi.org/10.1109/TED.2021.3070838 ]
  25. “Vibration-based biomimetic odor classification”, N Pandey, D Pal, D Saha, and S Ganguly, Scientific reports 11 (1), 1-8 (2021).[ https://doi.org/10.1038/s41598-021-90592-x ]
  26. “The avian compass can be sensitive even without sustained electron spin coherence”, Rakshit Jain, Vishvendra S. Poonia, Kasturi Saha, Dipankar Saha, and Swaroop Ganguly, Proc. R. Soc. A477, 20200778 (2021). [ https://doi.org/10.1098/rspa.2020.0778 ]
  27. “Impact of Relative Gate Position on DC and RF Characteristics of High Performance AlGaN/GaN HEMTs”, Y. Yadav, B. Upadhyay, J. Jha, S. Ganguly, and D. Saha, IEEE Transactions on Electron Devices 67, 4141 (2020) . [ http://dx.doi.org/10.1109/TED.2020.3019359 ]
  28. “Femto-second Carrier and Photon Dynamics in Site Controlled Hexagonal InGaN/GaN Isolated Quantum Dots: Natural radial potential well and its dynamic modulation”, Pratim K. Saha, Tarni Aggarwal, Ankit Udai, Vikas Pendem, Swaroop Ganguly, and Dipankar Saha, ACS Photonics 7, 2555(2020). [ https://doi.org/10.1021/acsphotonics.0c00905 ]
  29. “Off-State Degradation and Recovery in Oxide/AlGaN/GaN Hetero-Interfaces: Importance of band-offset, electron and hole trapping”, Jaya Jha, Mudassar Meer, Swaroop Ganguly and Dipankar Saha, ACS Applied Electronic Materials, 2, 2071(2020).[ https://pubs.acs.org/doi/10.1021/acsaelm.0c00322 ]
  30. “Femto-second transient absorption spectroscopy for probing near-surface carrier-photon dynamics in gallium nitride”, Shonal Chouksey, Pratim Saha, Vikas Pendem, Tarni Aggarwal, Ankit Udai, Swaroop Ganguly, and Dipankar Saha, Applied Surface Science 518, 146225(2020).[ https://doi.org/10.1016/j.apsusc.2020.146225 ]
  31. “Efficient modeling of barrier resistance for an Improved Lumped Element Model of GaN-based MIS-HEMT gate stack”, Narendra Rai, Ashutosh Mahajan, Dipankar Saha, and Swaroop Ganguly, IEEE IEEE Journal of the Electron Devices Society 8, 1145(2020).[ http://dx.doi.org/10.1109/JEDS.2020.3025176 ]
  32. “Role of defect saturation in improving optical response from InGaN nanowires in higher wavelength regime”, D. Nag, Ritam Sarkar, S. Bhunia, Tarni Aggarwal, Kankat Ghosh, Shreekant Sinha, Swaroop Ganguly, Dipankar Saha, Ray-Hua Horng, and Apurba Laha, Nanotechnology 31, 495705(2020).[ https://doi.org/10.1088/1361-6528/abaadd ]
  33. “Tensile Strain and Fermi Level Alignment in Thermally Grown TiO2 and Al2O3 Based AlGaN/GaN MOS-HEMTs”, A. Rawat, V. Surana, S. Ganguly, and D. Saha, Solid State Electronics 164, 107702(2020). [ https://doi.org/10.1016/j.sse.2019.107702 ]
  34. “Interface dynamics in ohmic contact optimization on AlGaN/GaN heterostructure by the formation of TiN”, Mudassar Meer, Akanksha Rawat, Kuldeep Takhar, Swaroop Ganguly and Dipankar Saha, Microelectronic Engineering 219, 111144(2020).[ https://doi.org/10.1016/j.mee.2019.111144 ]
  35. “Implementation of the Taguchi method to optimize p-ohmic contact for InGaN/GaN LEDs”, Shonal Chouksey and Dipankar Saha, Microelectronic Engineering 218, 111135(2019).[ http://dx.doi.org/10.1016/j.mee.2019.111135 ]
  36. “Realization of high quality silicon nitride deposition at low temperatures”, Vivek Kumar Surana, Navneet Bhardwaj, Akanksha Rawat, Yogendra Kumar Yadav, Swaroop Ganguly, Dipankar Saha, Journal of Applied Physics 126, 115302 (2019).[ https://doi.org/10.1063/1.5114927 ]
  37. “Low field mobility in electrostatically evolved AlGaN/GaN one-dimensional channel from a two-dimensional electron gas system”, A. Kumar, N. Garigapati, and D. Saha, Appl. Phys. Lett. 115, 032105 (2019). [ https://doi.org/10.1063/1.5098864 ]
  38. “Efficient ab initio plus analytic calculation of the effect of GaN layer tensile strain in AlGaN/GaN heterostructures”, Mihir; Mukherjee, Sudipta; Ghosh, Joydeep; Saha, Dipankar; Ganguly, Swaroop; Laha, Apurba; Ghosh, Prasenjit, Jap. Journal of Applied Physics.[ https://doi.org/10.7567/1347-4065/ab39d0 ]
  39. “Gate Current Reduction and Improved DC/RF Characteristics in GaN-Based MOS-HEMTs using Thermally Grown TiO2 as a Dielectric”, A. Rawat , V. Surana, M. Meer, N. Bhardwaj, S. Ganguly, and D. Saha, IEEE Transactions on Electron Devices (2019).[ http://dx.doi.org/10.1109/TED.2019.2910608 ]
  40. “Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application”, Ritam Sarkar, S. Bhunia, D. Nag, B. C. Barik, K. Das Gupta, D. Saha, S. Ganguly, Apurba Laha, Jori Lemettinen, Christoffer Kauppinen, Iurii Kim, Sami Suihkonen, Philipp Gribisch, and Hans-Jörg Osten, , Appl. Phys. Lett. 115, 063502 (2019).[ https://doi.org/10.1063/1.5109861 ][http://www.semiconductor-today.com/news_items/2019/sep/iit-200919.shtml]
  41. “Theoretical Modelling of Exciton Binding Energy, Steady-State and Transient Optical Response of GaN/InGaN/GaN and AlGaN/GaN/AlGaN Core-Shell Nanostructures”, Pendem, Vikas; Udai, Ankit; Aggarwal, Tarni; Ganguly, Swaroop; Saha, Dipankar, Nanotechnology (2019).[ https://doi.org/10.1088/1361-6528/ab1154 ]
  42. “Engineering V-shaped pits in InGaN layers grown by PA-MBE toward optimizing the active region of green LEDs”, D Nag, T Aggarwal, R Sarkar, S Bhunia, S Ganguly, D Saha, A Laha, JOSA B 36 (3), 616-623 (2019).[ https://doi.org/10.1364/JOSAB.36.000616 ]
  43. “Al2O3 formed by post plasma oxidation of Al as a Gate dielectric for AlGaN/GaN MIS-HEMTs”, Kuldeep Takhar, Bhanu B Upadhyay, Yogendra K Yadav, Swaroop Ganguly, and Dipankar Saha, Applied Surface Science 481, 219 (2019).[ https://doi.org/10.1016/j.apsusc.2019.03.065 ]
  44. “Impact of DBR on Carrier and Photon Dynamics in GaN-based Surface Emitting Diodes Manifested by Ultrafast Transient Absorption Spectroscopy”, Tarni Aggarwal, Vikas Pendem, Ankit Udai, Pratim Kumar Saha, Shonal Chouksey, Swaroop Ganguly, and Dipankar Saha, Japanese Journal of Applied Physics 58, SCCC15(2019).[ https://doi.org/10.7567/1347-4065/ab09df ]
  45. “Determination of Size Dependent Carrier Capture in InGaN/GaN Quantum Nanowires by Femto-second Transient Absorption Spectroscopy: Effect of Optical Phonon, Electron-Electron Scattering and Diffusion”, Shonal Chouksey, S Sreenadh, Swaroop Ganguly, Dipankar Saha, Nanotechnology 30, 194003 (2019).[ https://doi.org/10.1088/1361-6528/ab0035 ]
  46. “Ti/Au/Al/Ni/Au low contact resistance and sharp edge acuity for highly scalable AlGaN/GaN HEMTs”, Y. Yadav, B. Upadhyay, M. Meer, S. Ganguly and D. Saha, IEEE Electron Dev. Lett. 40, 67 (2019). [ https://doi.org/10.1109/LED.2018.2884155 ]
  47. “Enhanced Luminescence from InGaN/GaN Nano-disk in a wire Array Caused by Surface Potential Modulation during Wet Treatment”, Pratim Kumar Saha, Vikas Pendem, Shonal Chouksey, Tarni Aggarwal, Ankit Udai, Swaroop Ganguly and Dipankar Saha, Nanotechnology 30, 104001 (2019).[ https://doi.org/10.1088/1361-6528/aaf8de ]
  48. “Evolution of Field Dependent Carrier Trapping during Off-state Degradation for GaN Based Metal Oxide Semiconductor High Electron Mobility Transistors”, Jaya Jha, Bhanu B. Upadhyay , Kuldeep Takhar, Navneet Bhardwaj, Swaroop Ganguly, and Dipankar Saha, Jour. of Appl. Phys. 124, 165704 (2018).[ https://doi.org/10.1063/1.5044590 ]
  49. “Charge density and bare surface barrier height in GaN/AlGaN/GaN heterostructures: A modeling and simulation study”, Joydeep Ghosh, Dipankar Saha, Swaroop Ganguly, Apurba Laha, International Journal of RF and Microwave Computer‐Aided Engineering 28, e21455 (2018).[ https://doi.org/10.1002/mmce.21455 ]
  50. “Thermally Grown TiO2 and Al2O3 for GaN Based MOS-HEMTs”, A. Rawat , M. Meer, V. Surana, N. Bhardwaj, V. Pendem, N. Garigapati, Y. Yadav, S. Ganguly, and D. Saha, IEEE Transactions on Electron Devices 65, 3725 (2018).[ http://dx.doi.org/10.1109/TED.2018.2857468 ]
  51. “Determination of strain relaxation in InGaN/GaN nanowalls from quantum confinement and exciton binding energy dependent photoluminescence peak”, Sandeep Sankaranarayanan, Shonal Chouksey, Pratim Saha, Vikas Pendem, Ankit Udai, Tarni Aggarwal, Swaroop Ganguly, and D. Saha, Sci. Rep. 8, 8404 (2018).[ http://dx.doi.org/10.1038/s41598-018-26725-6 ]
  52. “Geometric contribution leading to anomalous estimation of two-dimensional electron gas density in GaN based heterostructures”, B. Upadhyay, J. Jha, K. Takhar, S. Ganguly, and D. Saha, Jour. of Appl. Phys. 123, 205702(2018).[ https://doi.org/10.1063/1.5026167 ]
  53. “Improved Mg dopant activation in p-GaN and enhanced electroluminescence in InGaN/GaN LEDs by plasma immersion ion implantation of Phosphorus”, P. Upadhyay and D. Saha, Physica Status Solidi A 1800174, 1(2018).[ https://doi.org/10.1002/pssa.201800174 ]
  54. “Surface Stoichiometry Modification and Improved DC/RF Characteristics by Plasma Treated and Annealed AlGaN/GaN HEMTs”, B. Upadhyay, K. Takhar, J. Jha, S. Ganguly, and D. Saha, Solid State Elec., 141, 1 (2018).[ https://doi.org/10.1016/j.sse.2017.11.001 ]
  55. “A Quantum Biomimetic Electronic Nose Sensor”, Ashlesha Patil, Dipankar Saha, and Swaroop Ganguly, Scientific reports 8, 128 (2018).[ http://doi.org/10.1038/s41598-017-18346-2 ]
  56. “Quantum Biomimetic Modeling of Diamond NV- Center Spin Dynamics”, Vishvendra Singh Poonia; Dipankar Saha; S. Ganguly, IEEE Transactions on Nanotechnology, 1(2018).[ http://doi.org/10.1109/TNANO.2018.2789824 ]
  57. “Reduced contact resistance and improved transistor performance by surface plasma treatment on ohmic regions in AlGaN/GaN HEMT heterostructures”, Y. Yadav, B. B. Upadhyay, M. Meer, S. Ganguly, and D. Saha, Physica Status Solidi A., 2017, 1700656 (2017).[ https://doi.org/10.1002/pssa.201700656 ]
  58. “Strong Size Dependency on the Carrier and Photon Dynamics in InGaN/GaN Single Nanowalls Determined Using Photoluminescence and Ultrafast Transient Absorption Spectroscopy”, S. Chouksey, S. Sankaranarayanan, V. Pendem, P. K. Saha, S. Ganguly, and D. Saha, Nanoletters 17, 4596(2017).[ https://doi.org/10.1021/acs.nanolett.7b00970 ]
  59. “Temperature independent optical transition with sub-nanometer linewidth in thermally diffused Gd in GaN”, Pratim Saha, Shonal Chouksey, Swaroop Ganguly, and D. Saha, Optics Letters 42, 2161 (2017).[ https://doi.org/10.1364/OL.42.002161 ]
  60. “Functional window of the avian compass”, V. S. Poonia,K. Kondabagil, D. Saha, and S. Ganguly, Phys. Rev. E. 95, 052417 (2017)[ https://doi.org/10.1103/PhysRevE.95.052417 ]
  61. “Impact of Wet-oxidized Al2O3/AlGaN Interface on AlGaN/GaN 2-DEGs”, Meer, Mudassar; Majety, Sridhar; Takhar, Kuldeep; Ganguly, Swaroop; Saha, Dipankar, Semiconductor Science and Technology 32, 04LT02 (2017).[ https://doi.org/10.1088/1361-6641/aa60a3 ]
  62. “Performance Improvement and Better Scalability of Wet-Recessed and Wet-Oxidized AlGaN/GaN High Electron Mobility Transistors”, K. Takhar, M. Meer, B. B. Upadhyay, S. Ganguly, and D. Saha, Solid State Electronics 131C, 39-44 (2017).[ http://dx.doi.org/10.1016/j.sse.2017.02.002 ]
  63. “Fringe field control of one-dimensional room temperature sub-band resolved quantum transport in site controlled AlGaN/GaN lateral nanowires”, A. S. Kumar, D. Khachariya, M. Meer, S. Ganguly and D. Saha, Physica Status Solidi A: Applications and Material Science 214, 1600620 (2016). [ http://dx.doi.org/10.1002/pssa.201600620 ] (Selected as the Feburary 2017 front cover page)
  64. “Giant peak to valley ratio in a GaN based resonant tunnel diode with barrier width modulation”, S. Sankaranarayanan, and D. Saha, Superlattices and Microstructures 98, 174 (2016).[ http://dx.doi.org/10.1016/j.spmi.2016.08.017 ]
  65. “Superluminescent light emitting diodes on naturally survived InGaN/GaN lateral nanowires”, D. Banerjee, S. Sankaranarayanan, D. Khachariya, M. B. Nadar, S. Ganguly, and D. Saha, Appl. Phys. Lett 109, 031111(2016).[ http://dx.doi.org/10.1063/1.4959562 ]
  66. “Source Extension Region Scaling for AlGaN/GaN High Electron Mobility Transistors using non-nalloyed Ohmic Contacts”, K. Takhar, A Kumar S, M. Meer, B. Upadhyay, D. Khachariya, P. Upadhyay, S. Ganguly, and D. Saha, Solid State Electronics 122, 70 (2016).[ http://dx.doi.org/10.1016/j.sse.2016.04.005 ] (Editor's choice paper)
  67. “Pulsed laser deposition of highly oriented stoichiometric thin films of topological insulator Sb2Te3”, B. Saha, P. Chaturvedi, A. K. Yadav, D. Saha and S. Ganguly, Jour. of Vacuum Sci. and Tech. 34, 021806 (2016). [ http://dx.doi.org/10.1116/1.4943026 ]
  68. “Carrier and photon dynamics in a topological insulator Bi2Te3/GaN type II staggered heterostructure”, P. Chaturvedi, S. Chouksey, D. Benerjee, S. Ganguly, and D. Saha, Appl. Phys. Lett. 107, 192105(2015).[ http://dx.doi.org/10.1063/1.4935554 ] (Editor's choice paper)
  69. “Electrically injected ultra-low threshold room temperature InGaN/GaN-based lateral triangular nanowire laser”, D. Banerjee , K. Takhar , S. Sankaranarayanan , P. Upadhyay , R. Ruia , S. Chouksey , D. Khachariya , S. Ganguly, and D. Saha, Appl. Phys. Lett. 107, 101108(2015).[ http://dx.doi.org/10.1063/1.4930825 ]
  70. “Observation of quantum oscillation of work function in ultrathin-metal/semiconductor junctions”, Kuldeep Takhar, Mudassar Meer1, Dolar Khachariya, Swaroop Ganguly and Dipankar Saha, J. Vac. Sci. Technol. A 33, 05E126 (2015). [ http://dx.doi.org/10.1116/1.4928413 ]
  71. “Large excitonic binding energy in GaN based superluminescent light emitting diode on naturally survived sub-10 nm lateral nanowires”, Debashree Banerjee, Maharaja B Nadar, Pankaj Upadhyay, Raksha Singla, Sandeep Sankaranarayanan, Dolar Khachariya, Nakul Pande, Kuldeep Takhar, Swaroop Ganguly, Dipankar Saha, arXiv preprint arXiv:1503.02279.
  72. “Improved Ohmic contact to GaN and AlGaN/GaN two-dimensional electron gas using trap assisted tunneling by B implantation”, P. Upadhyay, M. Meer, K. Takhar, D. Khachariya, A. Kumar S, D. Banerjee, S. Ganguly, A. Laha and D. Saha physica status solidi (b) 252, 989-995 (2015).[ http://dx.doi.org/10.1002/pssb.201451586 ]
  73. “State transitions and decoherence in the avian compass”, VS Poonia, D Saha, S Ganguly Phys. Rev. E 91, (052709).[ http://dx.doi.org/10.1103/PhysRevE.91.052709 ]
  74. “Polarization Modulation in GaN Based Double Barrier Resonant Tunneling Diodes”, S. Sankaranarayanan, S. Ganguly and D. Saha, Applied Physics Express 7, 095201 (2014).[ http://dx.doi.org/10.7567/APEX.7.095201 ]
  75. “Fermi-level depinning at metal/GaN interface by an insulating barrier”, R. Adari, D. Banerjee, S. Ganguly, and D. Saha, Thin Solid Films 550, 564 (2014). [ http://dx.doi.org/10.1016/j.tsf.2013.11.041 ]
  76. “Electrical Spin Injection using GaCrN in a GaN based Spin Light Emitting Diode”, D. Banerjee, R. Adari, S. Sankaranarayan, A. Kumar, S. Ganguly, R. W. Aldhaheri, M. A. Hussain, A. S. Balamesh, and D. Saha, Appl. Phys. Lett. 103, 242408 (2013).[ http://dx.doi.org/10.1063/1.4848836 ]
  77. “Memory Elements Using Multiterminal Magnetoresistive Devices”, R. Adari, D. Banerjee, S. Ganguly, and D. Saha, Applied Physics Express 6, 043002 (2013). [ http://dx.doi.org/10.7567/APEX.6.043002 ]
  78. “Room temperature ferromagnetism in thermally diffuses Cr in GaN”, P. Suggisetti, D. Banerjee, R. Adari, N. Pande, T. Patil, S. Ganguly and D. Saha, AIP Advances 3, 032143 (2013). [ http://dx.doi.org/10.1063/1.4799716 ]
  79. “Double Channel AlGaN/GaN High Electron Mobility Transistor with InGaN Back-Barrier”, A. Kamath, T. Patil, R. Adari, S. Ganguly, R. W. Aldhaheri, M. A. Hussain, and D. Saha, IEEE Electron Device Letters 33, 1690 (2012). [ http://dx.doi.org/10.1109/LED.2012.2218272 ]
  80. “Effects of Device Geometry on Output Circular Polarization in a Spin-LED”, D. Banerjee, R. Adari, T. Pramanik, S. Ganguly, and D. Saha, IEEE Transactions on Magnetics 48, 2761 (2012). [ http://dx.doi.org/10.1109/TMAG.2012.2195649 ]
  81. “GaN etch rate and surface roughness evolution in Cl-2/Ar based inductively coupled plasma etching”, DS Rawal, H. Arora, VR Agarwal, S. Vinayak, A. Kapoor, BK Sehgal, R. Muralidharan, D. Saha, HK Malik, Thin Solid Films 520, 7212 (2012). [ http://dx.doi.org/10.1016/j.tsf.2012.07.117 ].
  82. “Gate Control and Amplification of Magnetoresistance in a Three-Terminal Device”, H. Kum, S. Jahangir, D. Basu, D. Saha, and P. Bhattacharya, Appl. Phys. Lett. 99, 152503 (2011). [ http://dx.doi.org/10.1063/1.3652765 ]
  83. “Modulation Bandwidth of Spin Laser”, D. Banerjee, R. Adari, M. Murthy, P. Suggisetti, S. Ganguly, and D. Saha, Jour. of Appl. Phys. 109, 07C317 (2011). [ http://dx.doi.org/10.1063/1.3556959 ]
  84. “Quantum dot polarized light sources”, P. Bhattacharya, D. Basu, A. Das, and D. Saha, Semiconductor Science and Technology 26, 014002 (2011). [ http://dx.doi.org/10.1088/0268-1242/26/1/014002 ]
  85. “Characteristics of a high temperature vertical spin valve”, D. Basu, H. Kum, P. Bhattacharya, and D. Saha, Appl. Phys. Lett. 97, 232505 (2010). [ http://dx.doi.org/10.1063/1.3524820 ]
  86. “Enhanced magnetoresistance in lateral spin-valve”, R. Adari, T. Patil, M. Murthy, R. Maheshwari, G. Vaidya, S. Ganguly, and D. Saha, Appl. Phys. Lett. 97, 112505 (2010). [ http://dx.doi.org/10.1063/1.3488818 ]
  87. “High-frequency dynamics of spin-polarized carriers and photons in a laser”, D. Saha, D. Basu, and P. Bhattacharya, Phys. Rev. B. 82, 205309 (2010). [ http://dx.doi.org/10.1103/PhysRevB.82.205309 ][Editor suggested paper]
  88. “Electronic transport driven spin-dynamics”, L. Siddiqui, D. Saha, S. Datta, and P.Bhattacharya, arXiv:0811.0204 (2009).
  89. Optical polarization modulation and gain anisotropy in an electrically injected spin laser”, D. Basu, D. Saha, and P. Bhattacharya, Phys. Rev. Lett. 102,093904 (2008). Also selected by virtual Journal of Nanoscale Science and Technology. [ http://dx.doi.org/10.1103/PhysRevLett.102.093904 ]
  90. “Quantum dot lasers: From promise to high-performance device”, P. Bhattacharya, Z. Mi, J. Yang, D. Basu, and D. Saha, Journal of Crystal Growth 311, 1625 (2009). [ http://dx.doi.org/10.1016/j.jcrysgro.2008.09.035 ]
  91. “A monolithically integrated magneto-opto-electronic circuit”, D. Saha, D. Basu, and P. Bhattacharya, Appl. Phys. Lett., 93, 194104 (2008). Also selected by virtual Journal of Nanoscale Science and Technology.[ http://dx.doi.org/10.1063/1.3028092 ]
  92. “Electrically driven spin-dynamics of paramagnetic impurities”, D. Saha, L. Siddiqui, P.Bhattacharya, S. Datta, D. Basu and M. Holub, Phys. Rev. Lett. 100, 196603 (2008). Also selected by virtual Journal of Nanoscale Science and Technology. [ http://dx.doi.org/10.1103/PhysRevLett.100.196603 ]
  93. “Characteristics of an electrically injected InAs/GaAs quantum dot spin laser operating at 200 K”, D. Basu, D. Saha, C. C. Wu, M. Holub, Z. Mi and P. Bhattacharya, Appl. Phys. Lett. 92, 091119 (2008). Also selected by virtual Journal of Nanoscale Science and Technology. [ http://dx.doi.org/10.1063/1.2883953 ]
  94. “Two dimensional spin diffusion in multi-terminal lateral spin-valves”, D. Saha, D. Basu, M. Holub, and P. Bhattacharya, Appl. Phys. Lett. 92, 022507 (2008). Also selected by virtual Journal of Nanoscale Science and Technology. [ http://dx.doi.org/10.1063/1.2834853 ]
  95. “Amplification of spin-current polarization”, D. Saha, M. Holub, and P. Bhattacharya, Appl. Phys. Lett. 91, 072513 (2007). Also selected by virtual Journal of Nanoscale Science and Technology. [ http://dx.doi.org/10.1063/1.2772660 ]
  96. “Spin injection and threshold current reduction in a semiconductor laser”, M. Holub, J. Shin, D. Saha, and P. Bhattacharya, Phys. Rev. Lett. 98, 146603 (2007).[ http://link.aps.org/doi/10.1103/PhysRevLett.98.146603 ]
  97. “Electron spin injection from a regrown Fe layer in a spin-polarized vertical-cavity-surface emitting laser”, M. Holub, P. Bhattacharya, J. Shin, and D. Saha, J. Crys. Growth 301, 602 (2007).[ http://dx.doi.org/10.1016/j.jcrysgro.2006.11.164 ]
  98. “Magnetoresistance of fully epitaxial MnAs/GaAs lateral spin-valves”, M. Holub, D. Saha, and P. Bhattacharya, J. Vac. Sci. and Technol. B 25, 1004 (2007).[ http://dx.doi.org/10.1116/1.2715991 ]
  99. “Physical Mechanism and Gate Insulator Material Dependence of Generation and Recovery of Negative-Bias Temperature Instability in p-MOSFETs”, D. Varghese, G. Gupta, L. M. Lakkimsetti, D. Saha, K. Ahmed, F. Nouri, and S. Mahapatra, IEEE Trans. Electron Devices 54, 1672 (2007).[ http://dx.doi.org/10.1109/TED.2007.899425 ]
  100. “Epitaxially grown MnAs/GaAs lateral spin valves”, D. Saha, M. Holub, P. Bhattacharya, and Y. C. Liao, Appl. Phys. Lett. 89, 142504 (2006). Also selected by virtual Journal of Nanoscale Science and Technology.[ http://dx.doi.org/10.1063/1.2358944 ]
  101. “On the generation and recovery of hot carrier induced interface traps: A Critical Examination of the 2D Reaction Diffusion Model”, D. Saha, D. Varghese, and S. Mahapatra, IEEE Electron Device Lett. 27, 188 (2006).[ http://dx.doi.org/10.1109/LED.2006.870241 ]
  102. “On the generation and recovery of interface traps in MOSFETs subjected to NBTI, FN and HCI stress”, S. Mahapatra, D. Saha, D. Varghese, and P. Bharath Kumar, IEEE Trans. Electron Devices 53, 1583 (2006).[ http://dx.doi.org/10.1109/TED.2006.876041 ]
  103. “Role of anode hole injection and valence band hole tunneling on interface trap generation during hot carrier injection stress”, D. Saha, D. Varghese, and S. Mahapatra, IEEE Electron Device Lett. 27, 585 (2006).[ http://dx.doi.org/10.1109/LED.2006.876310 ]
  104. “Spin-polarized surface-emitting lasers”, P. Bhattacharya, M. Holub, and D. Saha, Phys. stat. sol. ( c ) 3, 4396 (2006).[ https://doi.org/10.1002/pssc.200672883 ]
  105. “Negative bias temperature instability in CMOS devices”, S. Mahapatra, M.A. Alam, P. Bharath Kumar, T.R. Dalei, D. Varghese and D. Saha, Microelectronic Engineering 80, 114 (2005).[ https://doi.org/10.1016/j.mee.2005.04.053 ]

Conference Presentations

  1. “Carrier de-trapping from sub-bandgap states: A novel mechanism in InGaN/GaN systems manifested by ultrafast pump-probe spectroscopy”, Tarni Aggarwal, Swaroop Ganguly, Dipankar Saha, 23rd Photonics North Conference 2021, virtual meeting, 31 May-2 June 2021. [ https://doi.org/10.1109/PN52152.2021.9598002 ]
  2. “Confined electron-phonon interaction in GaN/InGaN quantum wells”, Tarni Aggarwal, Swaroop Ganguly, Dipankar Saha, Novel Optical Materials, and Applications-OSA Advanced Photonics Congress 2021, virtual meeting, 26 July-30 July 2021. [ https://doi.org/10.1364/PVLED.2021.PvTu4C.3 ]
  3. “Determining carrier decay kinetics in QCSE exhibiting materials”, Ankit Udai, Tarni Aggarwal, Swaroop Ganguly, Dipankar Saha, 23rd Photonics North Conference 2021, virtual meeting, 31 May-2 June 2021. [ https://doi.org/10.1109/PN52152.2021.9597914 ]
  4. “High Power Broad C-band Amplifier Using AlGaN/GaN Based High Electron Mobility Transistors”, J. Jha, Y. Yadav, B. Upadhyay, S. Surapaneni, N. Bhardwaj, Swaroop Ganguly and Dipankar Saha, 2021 8th International Conference on Electrical and Electronics Engineering (ICEEE), Istanbul, Turkey, April 9-11, 2021.[ https://doi.org/10.1109/ICEEE52452.2021.9415912 ]
  5. “Carrier-Photon Dynamics in InGaN/GaN Quantum-Dots Emitting Green Light”, Ankit Udai, Anthony Aiello, Tarni Aggarwal, Pratim K. Saha, Dipankar Saha, Pallab Bhattacharya, Electronic Materials Conference 2021, Virtual Conference, 23–25 June 2021.
  6. “Carrier de-trapping from sub-bandgap states: A novel mechanism in InGaN/GaN systems manifested by ultrafast pump-probe spectroscopy”, Tarni Aggarwal, Swaroop Ganguly, Dipankar Saha, 23rd Photonics North Conference 2021, virtual meeting, 31 May-2 June 2021. [proceeding in IEEE digital library, waiting for DOI]
  7. “Confined electron-phonon interaction in GaN/InGaN quantum wells”, Tarni Aggarwal, Swaroop Ganguly, Dipankar Saha, Novel Optical Materials and Applications-OSA Advanced Photonics Congress 2021, virtual meeting, 26 July-30 July 2021. [proceeding in OSA Technical Digest, waiting for DOI]
  8. “Determining the Carrier Decay Kinetics in QCSE-exhibiting materials: An Accurate Interpretation of Transient Absorption Spectroscopy Data”, Ankit Udai, Tarni Aggarwal, Vikas Pendem, Swaroop Ganguly, Dipankar Saha, Photonics North 2021, Virtual Conference, 31 May–2 June 2021.
  9. “Angle-Dependent Pump-Probe Differential Transient Absorption Spectroscopy as a Novel Technique to Examine Surface Properties of Semiconductor Nanostructures”, Vikas Pendem, Pratim Saha, Tarni Aggarwal, Shonal Chouksey, Ankit Udai, Swaroop Ganguly, Dipankar Saha, Optical Devices and Materials for Solar Energy and Solid-state Lighting 2019, Burlingame, California United States, 29 July–2 August 2019. [https://www.osapublishing.org/abstract.cfm?uri=PVLED-2019-PW3C.4 ]
  10. “Multi-finger high power Gallium Nitride based high electron mobility transistors”, Jaya Jha, Sreenadh Surapaneni, Akhil Kumar S., Swaroop Ganguly and Dipankar Saha, IEEE International Conference on Electrical and Electronics Engineering, Istanbul, Turkey, April 16-17, 2019.[https://doi.org/10.1109/ICEEE2019.2019.00046 ]
  11. “Atomistic Analysis of Receptor Structure in Quantum Biomimetic Olfactory Sensor”, IEEE Sensors 2018, Swetapadma Sahoo ; Nidhi Pandey ; Dipankar Saha ; Swaroop Ganguly, New Delhi, India, 2018.
  12. “Contact resistance improvement in alloyed ohmic contact on AlGaN/GaN heterostructure”, Mudassar Imam Yahya Meer, Kuldeep Takhar, Swaroop Ganguly, and Dipankar Saha, IWN2018, Kanazawa, Japan, Nov 11-16, 2018.
  13. “Metal stack for sharp edge acuity and low contact resistance with high scalability for AlGaN/GaN HEMTs”, Yogendra Kumar Yadav, Bhanu Bhakta Upadhyay, Mudassar Meer, Navneet Bhardwaj, Swaroop Ganguly, and Dipankar Saha, IWN2018, Kanazawa, Japan, Nov 11-16, 2018.
  14. “Reduction in interface trap density and improvement in DC and RF performance using wet oxidation of AlGaN/GaN HEMTs”, Mudassar Imam Yahya Meer, Akanksha Rawat, Yogendra Yadav, Swaroop Ganguly, and Dipankar Saha, IWN2018, Kanazawa, Japan, Nov 11-16, 2018.
  15. “High Quality SiNx Deposited by ICP-CVD for III-Nitride HEMTs”, Vivek Surana, Navneet Bhardwaj, Akanksha Rawat, YogendraK Yadav, Swaroop Ganguly, and Dipankar Saha, IWN2018, Kanazawa, Japan, Nov 11-16, 2018.
  16. “Fringe Field Controlled AlGaN/GaN Nanowire Field Effect Transistors”, Akhil Kumar S,Swaroop Ganguly, and Dipankar Saha, IWN2018, Kanazawa, Japan, Nov 11-16, 2018.
  17. “Fabrication of low loss and compact size inter-digitated capacitor on GaN using Si3N4”, Navneet Bhardwaj, Yogendra K Yadav, Swaroop Ganguly and Dipankar Saha, IWN2018, Kanazawa, Japan, Nov 11-16, 2018.
  18. “Interface Trap characterization of Thermally Grown TiO2 and Al2O3 based MOS-capacitors using Deep level Transient and Conductance Spectroscopy”, Akanksha Rawat, Vivek Surana, Mudassar Meer, Swaroop Ganguly, and Dipankar Saha, IWN2018, Kanazawa, Japan, Nov 11-16, 2018.
  19. “Study of photon dynamics at the outer edge of GaN-based Vertical Cavity Surface Emitting Laser Diodes”, Tarni Aggarwal, Ankit Udai, Vikas Pendem, Swaroop Ganguly, and Dipankar Saha, IWN2018, Kanazawa, Japan, Nov 11-16, 2018.
  20. “Optimization of number of fingers and finger length for AlGaN/GaN RF HEMTs”, Mudassar Imam Yahya Meer, Kuldeep Takhar, Swaroop Ganguly, and Dipankar Saha, IWN2018, Kanazawa, Japan, Nov 11-16, 2018.
  21. “Lateral 1-D Transistors on AlGaN/GaN Heterostructure with Non-Contacting Side Gate” , Akhil S. Kumar, Dolar Khachariya, Kuldeep Takhar, Swaroop Ganguly and Dipankar Saha, E-MRS 2017 Fall Meeting, Warsaw, Poland, September 18 - 21, 2017.
  22. “Modeling the effect of the two-dimensional hole gas in a GaN/AlGaN/GaN heterostructure”, Joydeep Ghosh ; Apurba Laha ; Dipankar Saha ; Swaroop Ganguly, 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Athens, Greece, 2017. [http://dx.doi.org/0.1109/ULIS.2017.7962588]
  23. “Modified Angelov model for an exploratory GaN-HEMT technology with short, few-fingered gates”, S. Emekar, J. Jha, S. Mukherjee, M. Meer, K. Takhar, D. Saha, S. Ganguly,SISPAD kamakura, Japan, 2017.[https://doi.org/10.23919/SISPAD.2017.8085278]
  24. “Improvement of Ohmic Contact by Surface Plasma Treatment on AlGaN/GaN Heterostructures”, Yogendra K. Yadav, Bhanu B. Upadhyay, Mudassar Meer, Swaroop Ganguly, Dipankar Saha, 12th International Conference on Nitride Semiconductors, Strasbourg, France, July 24 - 28, 2017.
  25. “Estimation of strain relaxation in InGaN/GaN nanowires through excitonic binding energy”, Sandeep Sankaranarayanan, Swaroop Ganguly, Dipankar Saha, 12th International Conference on Nitride Semiconductors, Strasbourg, France, July 24 - 28, 2017.
  26. “Improved Characteristics for Thermally Grown TiO2 and Al2O3 Based MOS-HEMTs”, Akanksha Rawat, Vivek K. Surana, Yogendra K. Yadav, Bhanu B. Upadhyay, Swaroop Ganguly, Dipankar Saha, 12th International Conference on Nitride Semiconductors, Strasbourg, France, July 24 - 28, 2017.
  27. “Improved p-type conduction in Gallium Nitride using Phosphorus Doping”, P. Upadhyay, K. Takhar, Bhanu B. Upadhyay, Yogendra K. Yadav and D. Saha, 12th International Conference on Nitride Semiconductors, Strasbourg, France, July 24 - 28, 2017.
  28. “Post dielectric under gate N2-plasma for improved performance of wet grown Al2O3/AlGaN/GaN MISHEMTs”, Kuldeep Takhar, Bhanu B. Upadhyay, Swaroop Ganguly and Dipankar Saha, 12th International Conference on Nitride Semiconductors, Strasbourg, France, July 24 - 28, 2017.
  29. “Carrier and Photon Dynamics in InGaN/GaN Lateral Nanowires”, Shonal Chouksey, Pratim Saha, Swaroop Ganguly and Dipankar Saha, 12th International Conference on Nitride Semiconductors, Strasbourg, France, July 24 - 28, 2017.
  30. “Enhanced Performance of Pre-Gate N2- Plasma Processed AlGaN/GaN HEMTs and Schottky Diodes”, Bhanu B. Upadhyay, Kuldeep Takhar, Yogendra K. Yadav and Dipankar Saha, 12th International Conference on Nitride Semiconductors, Strasbourg, France, July 24 - 28, 2017.
  31. “Radiative Atomic Transition from Rare Earth Doped GaN”, Pratim Kumar Saha, Swaroop Ganguly and Dipankar Saha, 12th International Conference on Nitride Semiconductors, Strasbourg, France, July 24 - 28, 2017.
  32. “An Asymmetric Resonant Tunneling Diode as an Efficient Quantum Biomimetic Electronic Nose”, Ashlesha Patil, Dipankar Saha and Swaroop Ganguly, Quantum Effects in Biological Systems, Jerusalem, March 2017 (BEST POSTER AWARD)
  33. “Emulating Photosynthetic Reaction Center Using Coupled Quantum Dots”, Vishvendra Poonia, Dipankar Saha and Swaroop Ganguly, Quantum Effects in Biological Systems, Jerusalem, March 2017.
  34. “Non-Alloyed Ohmic Contacts to AlGaN/GaN High Electron Mobility Transistors for Better Scalability of Source Extension Region”, Kuldeep Takhar, Akhil Kumar S, Mudassar Meer, Bhanu B. Upadhyaya, Pankaj Upadhyay, Dolar Khachariya, Swaroop Ganguly and Dipankar Saha, International Workshop on Nitride Semiconductors, Orlando, Florida, Oct 2-7 (2016).
  35. “Quantum biomimetic modeling of magnetic field sensing using diamond NV−centers”, Vishvendra S Poonia, Dipankar Saha, Swaroop Ganguly, 2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO), Vishvendra S. Poonia ; Dipankar Saha ; Swaroop Ganguly. [http://dx.doi.org/10.1109/NANO.2016.7751335]
  36. “Giant Peak to Valley Ratio in a GaN Based Tunnel Diode with Barrier Width Modulation”, S. Sankaranarayanan, Swaroop Ganguly and Dipankar Saha, International Workshop on Nitride Semiconductors, Orlando, Florida, Oct 2-7 (2016).
  37. “Performance Improvement and Better Scalability of Wet-Oxide AlGaN/GaN High Electron Mobility Transistors”, Kuldeep Takhar, Mudassar Meer, Yogendra K. Yadav, Akhil Kumar S, Pankaj Upadhyay, Bhanu B. Upadhyay, Swaroop Ganguly and Dipankar Saha, International Workshop on Nitride Semiconductors, Orlando, Florida, Oct 2-7 (2016).
  38. “GaN Nanowire Transistors”, A. Kumar S, S. Ganguly, and D. Saha, EMN Meeting on Nanowires, Amsterdam, Netherlands, May 16-19, 2016.
  39. “Molecular wire for quantum biomimetic electronic nose”, A. Patil, D. Saha, and S.Ganguly, 2016 IEEE 16th International Conference on Nanotechnology, Aug 22-25, Sendai, Japan (2016). [http://dx.doi.org/10.1109/NANO.2016.7751334]
  40. “Role of laser energy density on growth of highly oriented topological insulator Bi2Se3 thin films”, P. Chaturvedi, B. Saha, D. Saha, and S. Ganguly, AIP Conference Proceedings 1731, 080056 (2016). [http://dx.doi.org/10.1063/1.4947934]
  41. “GaN based nanowire laser”, D. Banerjee, S. Ganguly and D. Saha, IWPSD 2015, IISc, Bangalore, India, Dec 7-10 2015.
  42. “Metal work function and barrier height tuning by using double layer ultra-thin metals”, K. Takhar, S. Maity, and D. Saha, Fourth International Conference on Multifunctional, Hybrid and Nanomaterials, Sitges, Barcelona, Spain, Mar 9-13 2015.
  43. “Pre-deposition and thermal diffusion of Cr for GaCrN dilute magnetic semiconductor”, A. Sharma, D. Banerjee, A. Diwan, and D. Saha, Fourth International Conference on Multifunctional, Hybrid and Nanomaterials, Sitges, Barcelona, Spain, Mar 9-13 2015.
  44. “Impact of GaN buffer layer thickness on structural and optical properties of AlGaN/GaN based high electron mobility transistor structure grown on Si(111) substrate by plasma assisted molecular beam epitaxy technique”, Ankit Ghosh ; Sudipta Das ; S. Ganguly ; D. Saha ; Apurba Laha, Proceedings of the 2015 Third International Conference on Computer, Communication, Control and Information Technology (C3IT), Hooghly, India. [http://dx.doi.org/10.1109/C3IT.2015.7060230]
  45. “GaN Based Nanowire Devices”, D. Saha, 2nd IEEE International Conference on Emerging Materials, IISc, Bangalore (2015). (Invited)
  46. “High Electron Mobility Transistor using Unalloyed Ohmic Contacts”, K. Takhar, A. Jain, S. Ganguly and D. Saha, 2nd IEEE International Conference on Emerging Materials, IISc, Bangalore (2015).
  47. “Effect of polarization on the performance of III-nitride Double Barrier Resonant Tunneling Diodes”, S. Sankaranarayan, S.Ganguly and D. Saha, International Workshop on Nitride Semiconductors, Wroclaw, Poland, Aug 24-29 2014.
  48. “AlGaN/GaN 1-D Channel for High Electron Mobility Transistors ”, D. Khachariya, K. Takhar, P. Upadhyay, and D. Saha, International Workshop on Nitride Semiconductors, Wroclaw, Poland, Aug 24-29 2014.
  49. “Nanowire Formation on InGaN-based Quantum Well LED Hetero-structure by Wet Chemical Etching”, D. Banerjee, P. Upadhyay, M. Nadar, S.Ganguly and D. Saha, Iterntional Workshop on Nitride Semiconductors, Wroclaw, Poland, Aug 24-29 2014.
  50. “Improved Ohmic Contact to Gallium Nitride using Trap Assisted Tunneling”, P. Upadhyay, D. Khachariya, K. Takhar, M. Meer, A. Kumar, and D. Saha, International Workshop on Nitride Semiconductors, Wroclaw, Poland, Aug 24-29 2014.
  51. “Design optimization of gate-all-around vertical nanowire transistors for future memory applications”, T. K. Agarwal, O. Badami, S. Ganguly, S. Mahapatra, and D. Saha, IEEE International Conference on electron-devices and circuits, Honk Kong, June 3-5, 2013.
  52. “Efficient Wigner function simulation for nanowire MOSFETs and comparison to Quantum Drift-Diffusion”, O. Badami ; D. Saha ; S. Ganguly, 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, UK, 2013. [http://dx.doi.org/10.1109/SISPAD.2013.6650627]
  53. “Double channel high electron mobility transistors”, A. Kamath and D. Saha, International Union of Materials Research and Society, IIsc Bangalore, Dec 16-20, 2013 (Invited).
  54. “Characteristics of Ferromagnetic Schottky Diodes on Heavily n-Doped GaN Semiconductor”, R. Adari, D. Banerjee, S. Ganguly, R. W. Aldhaheri, M. A. Hussain, and D. Saha, IEEE International Conference on electron-devices and circuits, Bangkok, Thailand, Dec 3-5 2012. [http://dx.doi.org/10.1109/EDSSC.2012.6482839]
  55. “Memory Elements using Multiterminal Magnetoresistive Devices”, WUN-SPIN 2012, Sydney, Australia, July 23-25, 2012 (Invited).
  56. “Cl2/Ar Based Dry Etching of GaCrN using Inductively Coupled Plasma” in AMEE Workshop on Nanoelectronics and Optoelectronics (IWNO) Tarkeshwar Patil, Nakul Pande, Rama BhadraAdari, Praveen Suggisetti, Neha Raorane, Swaroop Ganguly, Rabah W. Aldhaheri, Mohammad A. Hussain and Dipankar Saha, , Hong Kong, Jan. 2012.
  57. “Effects of Hole and Electric Field on Spin Injection and Transport Through Ferromagnet/Semiconductor Junction”, WUN-SPIN 2012, Sydney, Australia, July 23-25, 2012.
  58. “Quantum Drift-Diffusion and Quantum Energy Balance simulation of nanowire junctionless transistors”, O Badami, N Kumar, D Saha, S Ganguly, 2012 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 2012. [http://dx.doi.org/10.1109/SNW.2012.6243303]
  59. “Cl2/Ar based inductively coupled plasma etching of GaN/AlGaN structure”, DS Rawal, Henika Arora, VR Agarwal, Ashok Kapoor, Seema Vinayak, BK Sehgal, R Muralidharan, Dipankar Saha, HK Malik, 16th International Workshop on Physics of Semiconductor Devices, 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India.[https://doi.org/10.1117/12.925529]
  60. “Effect of Device Geometry on Output Circular Polarization in a Spin-LED”, D. Banerjee, S. Ganguly, and D. Saha, IEEE International Magnetics Conference, Vancouver, Canada, May 2011.
  61. “Room-temperature Ferromagnetism in Homogeneous Cr-doped GaN”, P. Suggisetti, T. Patil, R. Adari, D. Banerjee, T. Pramanik, D. Saha, and S. Ganguly, 56th Annual Conference on Magnetism and Magnetic Materials, Arizona, USA, Oct 2011.
  62. “Effect of Drift on Spin Polarization in a Spin-LED”, D. Banerjee, T. Pramanik, R. Adari, T. Patil, P. Suggisetti, S. Ganguly, and D. Saha, 56th Annual Conference on Magnetism and Magnetic Materials, Arizona, USA, Oct 2011.
  63. “Temperature Dependent Characteristics of Fe-GaN Schottky Diodes”, R. Adari, B. Sarkar, T. Patil, D. Banerjee, P. Suggisetti, S. Ganguly, and D. Saha, 2011 International Conference on Solid State Devices and Materials, Nagoya Japan, Sep 2011.
  64. “High frequency dynamics and output polarization of a spin laser”, P. Bhattacharya, D. Saha, and D. Basu, APS March Meeting, Dallas, Texas, Mar 2011
  65. A. Kamath, T. Patil, R. Adari, D. Saha, “GaN based High Electron Mobility Transistors with & without InGaN Back Barriers”. IWPSD, India (2011) (Invited talk).
  66. R. Adari, Debashree, S. Ganguly and D. Saha, “Fabrication and characterization of Co/GaN Schottky tunnel contacts”, Int. Workshop on Physics of Semiconductor Devices, India (2011).
  67. “Ferromagnet/semiconductor spin based electronic and optoelectronic devices”, D. Banerjee, R. Adari, T. Patil, S. Ganguly, D. Saha, IITB-Monash Research Academy Annual Symposium, Bombay, India, Feb 2011.
  68. “Geometrical enhancement of spin accumulation in lateral spin-valves”, R. Adari, D. Banerjee, T. Patil, S. Ganguly, and D. Saha, 55th Annual Conference on Magnetism and Magnetic Materials, Atlanta, Georgia, Nov 2010.
  69. “Modulation bandwidth of a spin laser”, D. Banerjee, R. Adari, T. Patil, S. Ganguly, and D. Saha, 55th Annual Conference on Magnetism and Magnetic Materials, Atlanta, Georgia, Nov 2010.
  70. “Computational Nanoelectronics” (INVITED), S. Ganguly, D. Saha et al., Workshop of High-Performance Computing, Bangalore, September 2010.
  71. “Logic beyond CMOS the promise of spintronics” (INVITED), S. Ganguly, D. Saha et al., IUMRSICEM, Seoul, South Korea, August 2010.
  72. “Polarization amplification in a spinlaser”, R. Adari, S. Murthy, S. Ganguly, and D. Saha, SPINMAT , University of Illinois Urbana Chanpaign, IL, Jun 2010.
  73. “Spin diffusion in lateral spin valves and spin lasers”, D. Basu, P. Bhattcharya, and D. Saha, SPIE Symposium on SPIE Nanoscience Engineering, San Diego, CA, Aug 2009.
  74. “A spin capacitor using Mn impurities embedded in a GaAs channel”, D. Saha, D. Basu, and P. Bhattacharya, Device Research Conference, Santa Barbara, CA, Jun 2008.
  75. “Threshold Current Reduction and Electrical Modulation of Degree of Circular Polarization in InAs/GaAs Quantum Dot Spin-VCSELs”, (Invited) D. Basu, C. C. Wu, D. Saha, Z. Mi, and P. Bhattacharya, Conference on Lasers and Electro-Optics, San Jose, CA, May, 2008.
  76. “Measurement of Spin Relaxation Time of Diluted Paramagnetic Mn Impurities in GaAs”, D. Saha, M. Holub, and P. Bhattacharya, North American Molecular Beam Epitaxy Conference, The University of New Mexico, Albuquerque, NM, Sep 2007.
  77. “Spin-Based Memory Using MnAs/GaAs Multi-Terminal Non-local Spin-Valves”, D. Saha, M. Holub, and P. Bhattacharya, 52nd Magnetism and Magnetic Materials Conference, Tampa, FL, Nov 2007.
  78. “Spin injection and accumulation in epitaxially grown MnAs/GaAs lateral spin valves”, D. Saha, M. Holub and P. Bhattacharya, 10th Joint MMM/Intermag Conference, Balti more, MD, Jan 2007.
  79. “Threshold Current Reduction and Output Power Enhancement with Magnetic Field in Sub-Monolayer InAs Quantum Dot VCSELs”, D. Basu, C. C. Wu, D. Saha, M. Holub, Z. Mi, and P. Bhattacharya, 20th Annual Meeting of the IEEE Lasers and Electro-Optics Society, Buena Vista, FL, Oct 2007.
  80. “On the Physical Mechanism of NBTI in Silicon Oxynitride p-MOSFETs: Can Differences in Insulator Processing Conditions Resolve the Interface Trap Generation versus Hole Trapping Controversy?”, S. Mahapatra, K. Ahmed, D. Varghese, A. E. Islam, G. Gupta, L. Madhav, D. Saha, and M. A. Alam, IEEE International Reliability Physics Symposium, Phoenix, AZ, Apr 2007.
  81. “Magnetoresistance of fully-epitaxial MnAs/GaAs lateral spin-valves”, M. Holub, D. Saha, and P. Bhattacharya, 24th North American Molecular Beam Epitaxy Conference, Durham, NC, Oct 2006.
  82. “Spin-polarized surface-emitting lasers” (INVITED), P. Bhattacharya, M. Holub, and D. Saha, 4th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors, Sendai, Japan, Aug 2006.
  83. “Threshold current reduction in a vertical-cavity-surface-emitting laser via electron spin injection”, M. Holub, J. Shin, D. Saha, and P. Bhattacharya, IEEE Lasers and Electro Optics Society Conference, Montreal, Que, Oct 2006.
  84. “Electrical spin injection from a regrown Fe layer in a spin-polarized vertical-cavity-surfaceemitting-laser”, M. Holub, P. Bhattacharya, J. Shin, and D. Saha, 14th International conference on Molecular Beam Epitaxy, Tokyo, Japan, Sep 2006.
  85. “On the dispersive versus arrhenius temperature activation of NBTI time evolution in plasma nitrided gate oxides: Measurements, theory and implications”, D. Varghese, D. Saha, S. Mahapatra, K. Ahmed, F. Nouri, and M. Alam, IEEE International Electron Devices Meeting, Washington, DC, Dec 2005.
  86. “Impact of Substrate Bias on p-MOSFET Negative Bias Temperature Instability”, P. Bharath Kumar, T. R. Dalei, D. Varghese, D. Saha, S. Mahapatra, and M. A. Alam, IEEE International Reliability Physics Symposium, San Jose, CA, Apr 2005.
  87. “Mechanism of Negative Bias Temperature Instability in CMOS Devices: Degradation, Recovery and Impact of Nitrogen” (INVITED), S. Mahapatra, M. A. Alam, P. Bharath Kumar, T. R. Dalei, and D. Saha, IEEE International Electron Devices Meeting, San Francisco, CA, Dec 2005.
  88. “Negative bias temperature instability in CMOS devices”, S. Mahapatra, M. A. Alam, P. Bharath Kumar, T. R. Dalei, D. Varghese, and D. Saha, Insulating Films on Semiconductors, Leuven, Belgium, Jun 2005.

Book Chapter

  • Comprehensive Semiconductor Science and Technology, Chapter 6.15 - Spin-Based Semiconductor Heterostructure Devices, Pages 563-614, D. Saha, M. Holub, P. Bhattacharya, D. Basu.

Patents

  1. “METHOD AND SYSTEM FOR OBTAINING INELASTIC TUNNELING SPECTRA FROM CURRENT(I)-VOLTAGE(V) CHARACTERISTICS,” (Filed).
  2. “Optical Second Harmonic Based Method for Noninvasive Characterization of Semiconductor/Insulator Interfaces,” (Filed).
  3. “GaN-based complementary inverter logic gate using InGaN/GaN superlattice capped enhancement-mode field-effect-transistors”, Patent Application No. 202121016813, App. Number TEMP/E-1/18598/2021-MUM.
  4. “Non-volatile and electrically rewritable Group III-V Schottky memory device and method of fabricating the same”, Patent Application No. 201721011530.
  5. “Light Emitting Diode Made of Indium-Gallium Nitride Based Nanowires & Method of Manufacture”, Patent No. 413307.
  6. “Polarization Modulation in GaN Based Double Barrier Resonant Tunneling Diodes”, Patent Application No. 3805/MUM/2014.
  7. “Gallium nitride based high-electron mobility transistor for non-volatile memory device and method of fabricating thereof”, Patent No. 362238.
  8. “Gallium nitride based Schottky diode for non-volatile memory device and the method of fabricating thereof”, Patent No. 362226.
  9. “Double Channel High Electron Mobility Transistor with Back-Barrier”, Patent No. 325139.

Contact Information

Department of Electrical Engineering
IIT Bombay, Powai
Mumbai 400 076, India
Email : dipankarsaha[AT]iitb.ac.in
Office room no: 244
Fax: (0091 22) - 25723707

faculty/dsaha.txt · Last modified: 2022/12/14 12:21 by Dipankar Saha