Dipankar Saha

ASCII

Curriculum Vitae

Education

  • University of Michigan, Ph.D.
  • Indian Institute of Technology Bombay, M. Tech
  • Jadavpur University, B.E.

Experience

  • Associate Professor, IIT Bombay, Powai, India, 2015 Onward
  • Assistant Professor, IIT Bombay, Powai, India, 2009-2015
  • Visiting Research Scientist University of Michigan, Ann Arbor, MI, Summer 2010
  • Research Engineer, Intel, Portland, 2008-2009
  • Research Associate, Solid State Electronics Laboratory, MI, Summer 2006
  • Teaching Assistant, EECS, IIT Bombay, India, 2003-2005
  • Developer, IBM India, 2001-2003

Major Honors

  • Associate, Indian Academy of Sciences, India 2011-2014
  • Nominated for the best doctoral thesis, University of Michigan, Ann Arbor, MI 2009
  • Rackham Predoctoral Fellow, University of Michigan, Ann Arbor, MI 2007-2008
  • Electrical Engineering and Computer Science Department Fellow, University of Michigan, Ann Arbor, MI 2005-2006
  • Tata Consultancy Services Fellow, Indian Institute of Technology, Bombay, India 2003-2005

Research Projects

Research Areas

  • GaN-LEDs, lasers and detectors
  • GaN Based High Electron Mobility Transistors
  • RF transistor design, fabrication, characterization and modelling
  • Power HEMTs
  • GaN based nano-wire transistor

Research Projects

  • Evaluate the effect of InGaN and AlGaN back barrier on high frequency performance of GaN based HEMTs - Supported by ASemiT, DRDO
  • Development of Ohmic and Schottky Contacts on Gallium Nitride - Supported by Indian Space Research Organization (ISRO)
  • Spintronic Devices Based on GaN Heterostructures and Materials (Supported by DST)
  • GaN High Electron Mobility Transistor (part of Centre of Excellence in Nanoelectronics-II) - Supported by Department of Information Technology.
  • Development and Fabrication of GaN/AlGaN HEMTs - Supported by Defence Research and Development Organization, India.
  • 3D Simulation of Metal Nanodot Memory - Supported by Semiconductor Research Corporation, USA.
  • Modeling and Simulation of Advanced NVM Devices - Supported by Micron Technology, Inc, USA.
  • Spintronic Devices using Electrical Spin Injection, Transport and Detection in GaAs - Supported by IRCC, IIT Bombay, India.
  • Spin-Based Memory Device Using III-V and II-VI Semiconductors - Supported by Department of Science and Technology, India.

Students

Ph.D Students

  1. Ankit Udai
  2. Tarni Aggarwal
  3. Vikas Pandem
  4. Jaya Jha
  5. Yogendra Kumar Yadav
  6. Pratim Saha
  7. Bhanu Bhakta Upadhyay
  8. Pankaj Upadhyay
  9. Shonal Chouksey
  10. Mudassar Imam Yahya Meer
  11. Akhil Kumar S
  12. Navneet Bhardwaj
  13. Vivek Surana
  14. Akankhsa Rawat
  15. Sandeep Sankaranarayan
  16. Pragati Chaturvedi, (Co-advisor, Ph.D (2017))
  17. Kuldeep Takhar, (Ph.D (2017), Joined Global Foundries, Singapore)
  18. Debashree Banerjee, (Ph.D (2016), Joined Post-doc in Uppsala University, Sweden)
  19. Rama Bhadra Rao Adari (Ph.D (2014) , Joined TSMC Taiwan)

M.Tech Students

  1. Manisha Kumari (M. Tech, IIT Bombay, 2016, Joined Bosch)
  2. Dolar Khachariya (M. Tech, IIT Bombay, 2015, Joined Ph.D at EPFL)
  3. Aakash Diwan (M. Tech, IIT Bombay, 2015, Joined Ganghi Jayanti Fellowship)
  4. Aakash Jain (M. Tech, IIT Bombay, 2014, Joined PhD at IITD)
  5. Nakul Pande (M. Tech, IIT Bombay, 2013, Joined Qualcomm)
  6. Arun V (M. Tech, IIT Bombay, 2013, Joined PhD in Germany)
  7. Tanmoy Pramanik (M. Tech, IIT Bombay, 2012, Joined Ph.D program at University of Texas)
  8. Abhisekh Kamath (M. Tech, IIT Bombay, 2012, Joined Intel Corp.)
  9. Prashant Singhal (M. Tech, IIT Bombay, 2012, Joined Sandisk)
  10. Kunal Naidu (DD, IIT Bombay, 2012)
  11. Lalit Agarwal (M. Tech, IIT Bombay, 2011, Joined NVIDIA)
  12. Kshitij Agarwal (M. Tech, IIT Bombay, 2011, Joined PhD program at Cornell University)
  13. Prantik Mahajan (M. Tech, IIT Bombay, 2010, Joined GLOBALFOUNDRIES Dresden)
  14. Sreenivas Subramanian (M. Tech, IIT Bombay, 2010, Joined Intel Corp.)

B.Tech Students

  1. Indrasen Bhattacharya (B. Tech, IIT Bombay 2012, Joined Ph.D program at University of Berkeley)
  2. Jithendra Anumula (B. Tech, IIT Bombay, 2014)
  3. Smarak Maity (B. Tech, IIT Bombay, 2015, Joined Ph.D at Harvard)

Publications

Journal Publications

  1. “Strong Size Dependency on the Carrier and Photon Dynamics in InGaN/GaN Single Nanowalls Determined Using Photoluminescence and Ultrafast Transient Absorption Spectroscopy”, S. Chouksey, S. Sankaranarayanan, V. Pendem, P. K. Saha, S. Ganguly, and D. Saha, Nanoletters (2017).[https://doi.org/10.1021/acs.nanolett.7b00970]
  2. “Temperature independent optical transition with sub-nanometer linewidth in thermally diffused Gd in GaN”, P. Saha, S. Chouksey, S. Ganguly, and D. Saha, Optics Letters 42, 2161 (2017).[https://doi.org/10.1364/OL.42.002161]
  3. “Impact of Wet-oxidized Al2O3/AlGaN Interface on AlGaN/GaN 2-DEGs”, Meer, Mudassar; Majety, Sridhar; Takhar, Kuldeep; Ganguly, Swaroop; Saha, Dipankar, Semiconductor Science and Technology 32, 04LT02 (2017).[https://doi.org/10.1088/1361-6641/aa60a3]
  4. “Performance Improvement and Better Scalability of Wet-Recessed and Wet-Oxidized AlGaN/GaN High Electron Mobility Transistors”, K. Takhar, M. Meer, B. B. Upadhyay, S. Ganguly, and D. Saha, Solid State Electronics 131C, 39-44 (2017).[http://dx.doi.org/10.1016/j.sse.2017.02.002]
  5. “Fringe field control of one-dimensional room temperature sub-band resolved quantum transport in site controlled AlGaN/GaN lateral nanowires”, A. S. Kumar, D. Khachariya, M. Meer, S. Ganguly and D. Saha, Physica Status Solidi A: Applications and Material Science 214, 1600620 (2016). [http://dx.doi.org/10.1002/pssa.201600620] (Selected as the Feburary 2017 front cover page)
  6. “Giant peak to valley ratio in a GaN based resonant tunnel diode with barrier width modulation”, S. Sankaranarayanan, and D. Saha, Superlattices and Microstructures 98, 174 (2016).[http://dx.doi.org/10.1016/j.spmi.2016.08.017]
  7. “Superluminescent light emitting diodes on naturally survived InGaN/GaN lateral nanowires”, D. Banerjee, S. Sankaranarayanan, D. Khachariya, M. B. Nadar, S. Ganguly, and D. Saha, Appl. Phys. Lett 109, 031111(2016).[http://dx.doi.org/10.1063/1.4959562]
  8. “Source Extension Region Scaling for AlGaN/GaN High Electron Mobility Transistors using non-nalloyed Ohmic Contacts”, K. Takhar, A Kumar S, M. Meer, B. Upadhyay, D. Khachariya, P. Upadhyay, S. Ganguly, and D. Saha, Solid State Electronics 122, 70 (2016).[http://dx.doi.org/10.1016/j.sse.2016.04.005] (Editor’s choice paper)
  9. “Pulsed laser deposition of highly oriented stoichiometric thin films of topological insulator Sb2Te3“, B. Saha, P. Chaturvedi, A. K. Yadav, D. Saha and S. Ganguly, Jour. of Vacuum Sci. and Tech. 34, 021806 (2016). [http://dx.doi.org/10.1116/1.4943026]
  10. “Carrier and photon dynamics in a topological insulator Bi2Te3/GaN type II staggered heterostructure”, P. Chaturvedi, S. Chouksey, D. Benerjee, S. Ganguly, and D. Saha, Appl. Phys. Lett. 107, 192105(2015).[http://dx.doi.org/10.1063/1.4935554] (Editor’s choice paper)
  11. “Electrically injected ultra-low threshold room temperature InGaN/GaN-based lateral triangular nanowire laser”, D. Banerjee , K. Takhar , S. Sankaranarayanan , P. Upadhyay , R. Ruia , S. Chouksey , D. Khachariya , S. Ganguly, and D. Saha, Appl. Phys. Lett. 107, 101108(2015).[http://dx.doi.org/10.1063/1.4930825]
  12. “Observation of quantum oscillation of work function in ultrathin-metal/semiconductor junctions”, Kuldeep Takhar, Mudassar Meer1, Dolar Khachariya, Swaroop Ganguly and Dipankar Saha, J. Vac. Sci. Technol. A 33, 05E126 (2015). [http://dx.doi.org/10.1116/1.4928413]
  13. “Large excitonic binding energy in GaN based superluminescent light emitting diode on naturally survived sub-10 nm lateral nanowires”, Debashree Banerjee, Maharaja B Nadar, Pankaj Upadhyay, Raksha Singla, Sandeep Sankaranarayanan, Dolar Khachariya, Nakul Pande, Kuldeep Takhar, Swaroop Ganguly, Dipankar Saha, arXiv preprint arXiv:1503.02279.
  14. “Improved Ohmic contact to GaN and AlGaN/GaN two-dimensional electron gas using trap assisted tunneling by B implantation”, P. Upadhyay, M. Meer, K. Takhar, D. Khachariya, A. Kumar S, D. Banerjee, S. Ganguly, A. Laha and D. Saha physica status solidi (b) 252, 989-995 (2015).[http://dx.doi.org/10.1002/pssb.201451586]
  15. “State transitions and decoherence in the avian compass”, VS Poonia, D Saha, S Ganguly Phys. Rev. E 91, (052709).[http://dx.doi.org/10.1103/PhysRevE.91.052709]
  16. “Polarization Modulation in GaN Based Double Barrier Resonant Tunneling Diodes”, S. Sankaranarayanan, S. Ganguly and D. Saha, Applied Physics Express 7, 095201 (2014).[http://dx.doi.org/10.7567/APEX.7.095201]
  17. “Fermi-level depinning at metal/GaN interface by an insulating barrier”, R. Adari, D. Banerjee, S. Ganguly, and D. Saha, Thin Solid Films 550, 564 (2014). [http://dx.doi.org/10.1016/j.tsf.2013.11.041]
  18. “Electrical Spin Injection using GaCrN in a GaN based Spin Light Emitting Diode”, D. Banerjee, R. Adari, S. Sankaranarayan, A. Kumar, S. Ganguly, R. W. Aldhaheri, M. A. Hussain, A. S. Balamesh, and D. Saha, Appl. Phys. Lett. 103, 242408 (2013).[http://dx.doi.org/10.1063/1.4848836]
  19. “Memory Elements Using Multiterminal Magnetoresistive Devices”, R. Adari, D. Banerjee, S. Ganguly, and D. Saha, Applied Physics Express 6, 043002 (2013). [http://dx.doi.org/10.7567/APEX.6.043002]
  20. “Room temperature ferromagnetism in thermally diffuses Cr in GaN”, P. Suggisetti, D. Banerjee, R. Adari, N. Pande, T. Patil, S. Ganguly and D. Saha, AIP Advances 3, 032143 (2013). [http://dx.doi.org/10.1063/1.4799716]
  21. “Double Channel AlGaN/GaN High Electron Mobility Transistor with InGaN Back-Barrier”, A. Kamath, T. Patil, R. Adari, S. Ganguly, R. W. Aldhaheri, M. A. Hussain, and D. Saha, IEEE Electron Device Letters 33, 1690 (2012). [http://dx.doi.org/10.1109/LED.2012.2218272]
  22. “Effects of Device Geometry on Output Circular Polarization in a Spin-LED”, D. Banerjee, R. Adari, T. Pramanik, S. Ganguly, and D. Saha, IEEE Transactions on Magnetics 48, 2761 (2012). [http://dx.doi.org/10.1109/TMAG.2012.2195649]
  23. “GaN etch rate and surface roughness evolution in Cl-2/Ar based inductively coupled plasma etching”, DS Rawal, H. Arora, VR Agarwal, S. Vinayak, A. Kapoor, BK Sehgal, R. Muralidharan, D. Saha, HK Malik, Thin Solid Films 520, 7212 (2012). [http://dx.doi.org/10.1016/j.tsf.2012.07.117].
  24. “Gate Control and Amplification of Magnetoresistance in a Three-Terminal Device”, H. Kum, S. Jahangir, D. Basu, D. Saha, and P. Bhattacharya, Appl. Phys. Lett. 99, 152503 (2011). [http://dx.doi.org/10.1063/1.3652765]
  25. “Modulation Bandwidth of Spin Laser”, D. Banerjee, R. Adari, M. Murthy, P. Suggisetti, S. Ganguly, and D. Saha, Jour. of Appl. Phys. 109, 07C317 (2011). [http://dx.doi.org/10.1063/1.3556959]
  26. “Quantum dot polarized light sources”, P. Bhattacharya, D. Basu, A. Das, and D. Saha, Semiconductor Science and Technology 26, 014002 (2011). [http://dx.doi.org/10.1088/0268-1242/26/1/014002]
  27. “Characteristics of a high temperature vertical spin valve”, D. Basu, H. Kum, P. Bhattacharya, and D. Saha, Appl. Phys. Lett. 97, 232505 (2010). [http://dx.doi.org/10.1063/1.3524820]
  28. “Enhanced magnetoresistance in lateral spin-valve”, R. Adari, T. Patil, M. Murthy, R. Maheshwari, G. Vaidya, S. Ganguly, and D. Saha, Appl. Phys. Lett. 97, 112505 (2010). [http://dx.doi.org/10.1063/1.3488818]
  29. “High-frequency dynamics of spin-polarized carriers and photons in a laser”, D. Saha, D. Basu, and P. Bhattacharya, Phys. Rev. B. 82, 205309 (2010). [http://dx.doi.org/10.1103/PhysRevB.82.205309]
  30. “Electronic transport driven spin-dynamics”, L. Siddiqui, D. Saha, S. Datta, and P.Bhattacharya, arXiv:0811.0204 (2009).
  31. Optical polarization modulation and gain anisotropy in an electrically injected spin laser”, D. Basu, D. Saha, and P. Bhattacharya, Phys. Rev. Lett. 102,093904 (2008). Also selected by virtual Journal of Nanoscale Science and Technology. [http://dx.doi.org/10.1103/PhysRevLett.102.093904]
  32. “Quantum dot lasers: From promise to high-performance device”, P. Bhattacharya, Z. Mi, J. Yang, D. Basu, and D. Saha, Journal of Crystal Growth 311, 1625 (2009). [http://dx.doi.org/10.1016/j.jcrysgro.2008.09.035]
  33. “A monolithically integrated magneto-opto-electronic circuit”, D. Saha, D. Basu, and P. Bhattacharya, Appl. Phys. Lett., 93, 194104 (2008). Also selected by virtual Journal of Nanoscale Science and Technology.[http://dx.doi.org/10.1063/1.3028092]
  34. “Electrically driven spin-dynamics of paramagnetic impurities”, D. Saha, L. Siddiqui, P.Bhattacharya, S. Datta, D. Basu and M. Holub, Phys. Rev. Lett. 100, 196603 (2008). Also selected by virtual Journal of Nanoscale Science and Technology. [http://dx.doi.org/10.1103/PhysRevLett.100.196603]
  35. “Characteristics of an electrically injected InAs/GaAs quantum dot spin laser operating at 200 K”, D. Basu, D. Saha, C. C. Wu, M. Holub, Z. Mi and P. Bhattacharya, Appl. Phys. Lett. 92, 091119 (2008). Also selected by virtual Journal of Nanoscale Science and Technology. [http://dx.doi.org/10.1063/1.2883953]
  36. “Two dimensional spin diffusion in multi-terminal lateral spin-valves”, D. Saha, D. Basu, M. Holub, and P. Bhattacharya, Appl. Phys. Lett. 92, 022507 (2008). Also selected by virtual Journal of Nanoscale Science and Technology. [http://dx.doi.org/10.1063/1.2834853]
  37. “Amplification of spin-current polarization”, D. Saha, M. Holub, and P. Bhattacharya, Appl. Phys. Lett. 91, 072513 (2007). Also selected by virtual Journal of Nanoscale Science and Technology. [http://dx.doi.org/10.1063/1.2772660]
  38. “Spin injection and threshold current reduction in a semiconductor laser”, M. Holub, J. Shin, D. Saha, and P. Bhattacharya, Phys. Rev. Lett. 98, 146603 (2007).[http://link.aps.org/doi/10.1103/PhysRevLett.98.146603]
  39. “Electron spin injection from a regrown Fe layer in a spin-polarized vertical-cavity-surface emitting laser”, M. Holub, P. Bhattacharya, J. Shin, and D. Saha, J. Crys. Growth 301, 602 (2007).[http://dx.doi.org/10.1016/j.jcrysgro.2006.11.164]
  40. “Magnetoresistance of fully epitaxial MnAs/GaAs lateral spin-valves”, M. Holub, D. Saha, and P. Bhattacharya, J. Vac. Sci. and Technol. B 25, 1004 (2007).[http://dx.doi.org/10.1116/1.2715991]
  41. “Physical Mechanism and Gate Insulator Material Dependence of Generation and Recovery of Negative-Bias Temperature Instability in p-MOSFETs”, D. Varghese, G. Gupta, L. M. Lakkimsetti, D. Saha, K. Ahmed, F. Nouri, and S. Mahapatra, IEEE Trans. Electron Devices 54, 1672 (2007).[http://dx.doi.org/10.1109/TED.2007.899425]
  42. “Epitaxially grown MnAs/GaAs lateral spin valves”, D. Saha, M. Holub, P. Bhattacharya, and Y. C. Liao, Appl. Phys. Lett. 89, 142504 (2006). Also selected by virtual Journal of Nanoscale Science and Technology.[http://dx.doi.org/10.1063/1.2358944]
  43. “On the generation and recovery of hot carrier induced interface traps: A Critical Examination of the 2D Reaction Diffusion Model”, D. Saha, D. Varghese, and S. Mahapatra, IEEE Electron Device Lett. 27, 188 (2006).
  44. “On the generation and recovery of interface traps in MOSFETs subjected to NBTI, FN and HCI stress”, S. Mahapatra, D. Saha, D. Varghese, and P. Bharath Kumar, IEEE Trans. Electron Devices 53, 1583 (2006).
  45. “Role of anode hole injection and valence band hole tunneling on interface trap generation during hot carrier injection stress”, D. Saha, D. Varghese, and S. Mahapatra, IEEE Electron Device Lett. 27, 585 (2006).
  46. “Spin-polarized surface-emitting lasers”, P. Bhattacharya, M. Holub, and D. Saha, Phys. stat. sol. ( c ) 3, 4396 (2006).
  47. “Negative bias temperature instability in CMOS devices”, S. Mahapatra, M.A. Alam, P. Bharath Kumar, T.R. Dalei, D. Varghese and D. Saha, Microelectronic Engineering 80, 114 (2005).

Conference Presentations

  1. “Radiative Atomic Transition from Rare Earth Doped GaN”, Pratim Kumar Saha, Swaroop Ganguly and Dipankar Saha, 12th International Conference on Nitride Semiconductors, Strasbourg, France, July 24 - 28, 2017.
  2. “An Asymmetric Resonant Tunneling Diode as an Efficient Quantum Biomimetic Electronic Nose”, Ashlesha Patil, Dipankar Saha and Swaroop Ganguly, Quantum Effects in Biological Systems, Jerusalem, March 2017 (BEST POSTER AWARD)
  3. “Emulating Photosynthetic Reaction Center Using Coupled Quantum Dots”, Vishvendra Poonia, Dipankar Saha and Swaroop Ganguly, Quantum Effects in Biological Systems, Jerusalem, March 2017.
  4. “Non-Alloyed Ohmic Contacts to AlGaN/GaN High Electron Mobility Transistors for Better Scalability of Source Extension Region”, Kuldeep Takhar, Akhil Kumar S, Mudassar Meer, Bhanu B. Upadhyaya, Pankaj Upadhyay, Dolar Khachariya, Swaroop Ganguly and Dipankar Saha, International Workshop on Nitride Semiconductors, Orlando, Florida, Oct 2-7 (2016).
  5. “Giant Peak to Valley Ratio in a GaN Based Tunnel Diode with Barrier Width Modulation”, S. Sankaranarayanan, Swaroop Ganguly and Dipankar Saha, International Workshop on Nitride Semiconductors, Orlando, Florida, Oct 2-7 (2016).
  6. “Performance Improvement and Better Scalability of Wet-Oxide AlGaN/GaN High Electron Mobility Transistors”, Kuldeep Takhar, Mudassar Meer, Yogendra K. Yadav, Akhil Kumar S, Pankaj Upadhyay, Bhanu B. Upadhyay, Swaroop Ganguly and Dipankar Saha, International Workshop on Nitride Semiconductors, Orlando, Florida, Oct 2-7 (2016).
  7. “GaN Nanowire Transistors”, A. Kumar S, S. Ganguly, and D. Saha, EMN Meeting on Nanowires, Amsterdam, Netherlands, May 16-19, 2016.
  8. “Molecular wire for quantum biomimetic electronic nose”, A. Patil, D. Saha, and S.Ganguly, 2016 IEEE 16th International Conference on Nanotechnology, Aug 22-25, Sendai, Japan (2016).
  9. “Role of laser energy density on growth of highly oriented topological insulator Bi2Se3 thin films”, P. Chaturvedi, B. Saha, D. Saha, and S. Ganguly, AIP Conference Proceedings 1731, 080056 (2016). [http://dx.doi.org/10.1063/1.4947934]
  10. “GaN based nanowire laser”, D. Banerjee, S. Ganguly and D. Saha, IWPSD 2015, IISc, Bangalore, India, Dec 7-10 2015.
  11. “Metal work function and barrier height tuning by using double layer ultra-thin metals”, K. Takhar, S. Maity, and D. Saha, Fourth International Conference on Multifunctional, Hybrid and Nanomaterials, Sitges, Barcelona, Spain, Mar 9-13 2015.
  12. “Pre-deposition and thermal diffusion of Cr for GaCrN dilute magnetic semiconductor”, A. Sharma, D. Banerjee, A. Diwan, and D. Saha, Fourth International Conference on Multifunctional, Hybrid and Nanomaterials, Sitges, Barcelona, Spain, Mar 9-13 2015.
  13. “GaN Based Nanowire Devices”, D. Saha, 2nd IEEE International Conference on Emerging Materials, IISc, Bangalore (2015). (Invited)
  14. “High Electron Mobility Transistor using Unalloyed Ohmic Contacts”, K. Takhar, A. Jain, S. Ganguly and D. Saha, 2nd IEEE International Conference on Emerging Materials, IISc, Bangalore (2015).
  15. “Effect of polarization on the performance of III-nitride Double Barrier Resonant Tunneling Diodes”, S. Sankaranarayan, S.Ganguly and D. Saha, International Workshop on Nitride Semiconductors, Wroclaw, Poland, Aug 24-29 2014.
  16. “AlGaN/GaN 1-D Channel for High Electron Mobility Transistors “, D. Khachariya, K. Takhar, P. Upadhyay, and D. Saha, International Workshop on Nitride Semiconductors, Wroclaw, Poland, Aug 24-29 2014.
  17. “Nanowire Formation on InGaN-based Quantum Well LED Hetero-structure by Wet Chemical Etching”, D. Banerjee, P. Upadhyay, M. Nadar, S.Ganguly and D. Saha, Iterntional Workshop on Nitride Semiconductors, Wroclaw, Poland, Aug 24-29 2014.
  18. “Improved Ohmic Contact to Gallium Nitride using Trap Assisted Tunneling”, P. Upadhyay, D. Khachariya, K. Takhar, M. Meer, A. Kumar, and D. Saha, International Workshop on Nitride Semiconductors, Wroclaw, Poland, Aug 24-29 2014.
  19. “Design optimization of gate-all-around vertical nanowire transistors for future memory applications”, T. K. Agarwal, O. Badami, S. Ganguly, S. Mahapatra, and D. Saha, IEEE International Conference on electron-devices and circuits, Honk Kong, June 3-5, 2013.
  20. “Double channel high electron mobility transistors”, A. Kamath and D. Saha, International Union of Materials Research and Society, IIsc Bangalore, Dec 16-20, 2013 (Invited).
  21. “Characteristics of Ferromagnetic Schottky Diodes on Heavily n-Doped GaN Semiconductor”, R. Adari, D. Banerjee, S. Ganguly, R. W. Aldhaheri, M. A. Hussain, and D. Saha, IEEE International Conference on electron-devices and circuits, Bangkok, Thailand, Dec 3-5 2012.
  22. “Memory Elements using Multiterminal Magnetoresistive Devices”, WUN-SPIN 2012, Sydney, Australia, July 23-25, 2012 (Invited).
  23. “Cl2/Ar Based Dry Etching of GaCrN using Inductively Coupled Plasma” in AMEE Workshop on Nanoelectronics and Optoelectronics (IWNO) Tarkeshwar Patil, Nakul Pande, Rama BhadraAdari, Praveen Suggisetti, Neha Raorane, Swaroop Ganguly, Rabah W. Aldhaheri, Mohammad A. Hussain and Dipankar Saha, , Hong Kong, Jan. 2012.
  24. “Effects of Hole and Electric Field on Spin Injection and Transport Through Ferromagnet/Semiconductor Junction”, WUN-SPIN 2012, Sydney, Australia, July 23-25, 2012.
  25. “Effect of Device Geometry on Output Circular Polarization in a Spin-LED”, D. Banerjee, S. Ganguly, and D. Saha, IEEE International Magnetics Conference, Vancouver, Canada, May 2011.
  26. “Room-temperature Ferromagnetism in Homogeneous Cr-doped GaN”, P. Suggisetti, T. Patil, R. Adari, D. Banerjee, T. Pramanik, D. Saha, and S. Ganguly, 56th Annual Conference on Magnetism and Magnetic Materials, Arizona, USA, Oct 2011.
  27. “Effect of Drift on Spin Polarization in a Spin-LED”, D. Banerjee, T. Pramanik, R. Adari, T. Patil, P. Suggisetti, S. Ganguly, and D. Saha, 56th Annual Conference on Magnetism and Magnetic Materials, Arizona, USA, Oct 2011.
  28. “Temperature Dependent Characteristics of Fe-GaN Schottky Diodes”, R. Adari, B. Sarkar, T. Patil, D. Banerjee, P. Suggisetti, S. Ganguly, and D. Saha, 2011 International Conference on Solid State Devices and Materials, Nagoya Japan, Sep 2011.
  29. “High frequency dynamics and output polarization of a spin laser”, P. Bhattacharya, D. Saha, and D. Basu, APS March Meeting, Dallas, Texas, Mar 2011
  30. A. Kamath, T. Patil, R. Adari, D. Saha, “GaN based High Electron Mobility Transistors with & without InGaN Back Barriers”. IWPSD, India (2011) (Invited talk).
  31. R. Adari, Debashree, S. Ganguly and D. Saha, “Fabrication and characterization of Co/GaN Schottky tunnel contacts”, Int. Workshop on Physics of Semiconductor Devices, India (2011).
  32. “Ferromagnet/semiconductor spin based electronic and optoelectronic devices”, D. Banerjee, R. Adari, T. Patil, S. Ganguly, D. Saha, IITB-Monash Research Academy Annual Symposium, Bombay, India, Feb 2011.
  33. “Geometrical enhancement of spin accumulation in lateral spin-valves”, R. Adari, D. Banerjee, T. Patil, S. Ganguly, and D. Saha, 55th Annual Conference on Magnetism and Magnetic Materials, Atlanta, Georgia, Nov 2010.
  34. “Modulation bandwidth of a spin laser”, D. Banerjee, R. Adari, T. Patil, S. Ganguly, and D. Saha, 55th Annual Conference on Magnetism and Magnetic Materials, Atlanta, Georgia, Nov 2010.
  35. “Computational Nanoelectronics” (INVITED), S. Ganguly, D. Saha et al., Workshop of High-Performance Computing, Bangalore, September 2010.
  36. “Logic beyond CMOS the promise of spintronics” (INVITED), S. Ganguly, D. Saha et al., IUMRSICEM, Seoul, South Korea, August 2010.
  37. “Polarization amplification in a spinlaser”, R. Adari, S. Murthy, S. Ganguly, and D. Saha, SPINMAT , University of Illinois Urbana Chanpaign, IL, Jun 2010.
  38. “Spin diffusion in lateral spin valves and spin lasers”, D. Basu, P. Bhattcharya, and D. Saha, SPIE Symposium on SPIE Nanoscience Engineering, San Diego, CA, Aug 2009.
  39. “A spin capacitor using Mn impurities embedded in a GaAs channel”, D. Saha, D. Basu, and P. Bhattacharya, Device Research Conference, Santa Barbara, CA, Jun 2008.
  40. “Threshold Current Reduction and Electrical Modulation of Degree of Circular Polarization in InAs/GaAs Quantum Dot Spin-VCSELs”, (Invited) D. Basu, C. C. Wu, D. Saha, Z. Mi, and P. Bhattacharya, Conference on Lasers and Electro-Optics, San Jose, CA, May, 2008.
  41. “Measurement of Spin Relaxation Time of Diluted Paramagnetic Mn Impurities in GaAs”, D. Saha, M. Holub, and P. Bhattacharya, North American Molecular Beam Epitaxy Conference, The University of New Mexico, Albuquerque, NM, Sep 2007.
  42. “Spin-Based Memory Using MnAs/GaAs Multi-Terminal Non-local Spin-Valves”, D. Saha, M. Holub, and P. Bhattacharya, 52nd Magnetism and Magnetic Materials Conference, Tampa, FL, Nov 2007.
  43. “Spin injection and accumulation in epitaxially grown MnAs/GaAs lateral spin valves”, D. Saha, M. Holub and P. Bhattacharya, 10th Joint MMM/Intermag Conference, Balti more, MD, Jan 2007.
  44. “Threshold Current Reduction and Output Power Enhancement with Magnetic Field in Sub-Monolayer InAs Quantum Dot VCSELs”, D. Basu, C. C. Wu, D. Saha, M. Holub, Z. Mi, and P. Bhattacharya, 20th Annual Meeting of the IEEE Lasers and Electro-Optics Society, Buena Vista, FL, Oct 2007.
  45. “On the Physical Mechanism of NBTI in Silicon Oxynitride p-MOSFETs: Can Differences in Insulator Processing Conditions Resolve the Interface Trap Generation versus Hole Trapping Controversy?”, S. Mahapatra, K. Ahmed, D. Varghese, A. E. Islam, G. Gupta, L. Madhav, D. Saha, and M. A. Alam, IEEE International Reliability Physics Symposium, Phoenix, AZ, Apr 2007.
  46. “Magnetoresistance of fully-epitaxial MnAs/GaAs lateral spin-valves”, M. Holub, D. Saha, and P. Bhattacharya, 24th North American Molecular Beam Epitaxy Conference, Durham, NC, Oct 2006.
  47. “Spin-polarized surface-emitting lasers” (INVITED), P. Bhattacharya, M. Holub, and D. Saha, 4th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors, Sendai, Japan, Aug 2006.
  48. “Threshold current reduction in a vertical-cavity-surface-emitting laser via electron spin injection”, M. Holub, J. Shin, D. Saha, and P. Bhattacharya, IEEE Lasers and Electro Optics Society Conference, Montreal, Que, Oct 2006.
  49. “Electrical spin injection from a regrown Fe layer in a spin-polarized vertical-cavity-surfaceemitting-laser”, M. Holub, P. Bhattacharya, J. Shin, and D. Saha, 14th International conference on Molecular Beam Epitaxy, Tokyo, Japan, Sep 2006.
  50. “On the dispersive versus arrhenius temperature activation of NBTI time evolution in plasma nitrided gate oxides: Measurements, theory and implications”, D. Varghese, D. Saha, S. Mahapatra, K. Ahmed, F. Nouri, and M. Alam, IEEE International Electron Devices Meeting, Washington, DC, Dec 2005.
  51. “Impact of Substrate Bias on p-MOSFET Negative Bias Temperature Instability”, P. Bharath Kumar, T. R. Dalei, D. Varghese, D. Saha, S. Mahapatra, and M. A. Alam, IEEE International Reliability Physics Symposium, San Jose, CA, Apr 2005.
  52. “Mechanism of Negative Bias Temperature Instability in CMOS Devices: Degradation, Recovery and Impact of Nitrogen” (INVITED), S. Mahapatra, M. A. Alam, P. Bharath Kumar, T. R. Dalei, and D. Saha, IEEE International Electron Devices Meeting, San Francisco, CA, Dec 2005.
  53. “Negative bias temperature instability in CMOS devices”, S. Mahapatra, M. A. Alam, P. Bharath Kumar, T. R. Dalei, D. Varghese, and D. Saha, Insulating Films on Semiconductors, Leuven, Belgium, Jun 2005.

Book Chapter

  • Comprehensive Semiconductor Science and Technology, Chapter 6.15 - Spin-Based Semiconductor Heterostructure Devices, Pages 563-614, D. Saha, M. Holub, P. Bhattacharya, D. Basu.

Patents

  1. “Non-volatile and electrically rewritable Group III-V Schottky memory device and method of fabricating the same”, Patent Application No. 201721011530.
  2. “Light Emitting Diode Made of Indium-Gallium Nitride Based Nanowires & Method of Manufacture”, Patent Application No. 202/MUM/2015.
  3. “Polarization Modulation in GaN Based Double Barrier Resonant Tunneling Diodes”, Patent Application No. 3805/MUM/2014.
  4. “GaN Based High Electron Mobility Transistor for Read/Write Memory with Gd Schottky Con­tact”, Patent Application No. 66/MUM/2013.
  5. “GaN Based Schottky Diode for Read/Write Memory and the method of forming Gd Schottky Contact”, Patent Application No. 65/MUM/2013.
  6. “Double Channel High Electron Mobility Transistor with Back-Barrier”, Patent Application No. 1294/MUM/2012.

Contact Information

Department of Electrical Engineering
IIT Bombay, Powai
Mumbai 400 076, India
Email : dsaha[AT]ee.iitb.ac.in
Phone (Internal(O)) : (0091 22) - 2576 7443
Phone (Internal(R)) :
Office room no: 244
Fax: (0091 22) - 25723707

 
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