Apurba Laha

laha.jpg

Contact Information

Department of Electrical Engineering
IIT Bombay, Powai
Mumbai 400076, India
Email : laha[AT] ee.iitb.ac.in

Phone :(O) +91 22 2576 9408

     (R) +91 22 2576 8408

Fax: +91 22 – 2572 3707

**Postdoctoral/Scientist positions available**

To work on 1. “Molecular Beam Epitaxial Growth of Gallium Nitride related semiconductors and Heterostructures for High Electron Mobility Transistor (HEMT)
2. Fabrication and Characterization of III-Nitride HEMT devices

        

The work involves 1. Growth and Characterization of High quality epitaxial GaN, AlGaN layers and their heterostructures on Sapphire, SiC and Si substrates using “Molecular Beam Epitaxy Technique”. 2) “Fabrication and characterization of III-Nitride HEMT devices”. Monthly salary: Rs.40000-70000 depending on experience and qualification.

Candidates who have prior knowledge on MBE growth and/or HEMT devices are encouraged to apply.

For application and any further information, please contact Prof. A. Laha, Department of Electrical Engineering, IIT Bombay. Email: laha@ee.iitb.ac.in

Research Interests

* III-Nitride semiconductors and heterostructures: Growth using Molecular Beam Epitaxy. Application: Optoelectronics devices

* Ge on Si, Ge on insulator (GOI), Strained SiGe etc. for Si based technology

* Oxide based electronics: Epitaxial rare earth oxides (high-K dielectrics) on Si, Ge and SiGe substrates for gate dielectric application in next generation CMOS, oxide heterostructures.

* Si and Ge based magnetic semiconductors for spintronic application.

* Physics of thin film growth

* Solid phase epitaxy of semiconductor and oxide materials, Encapsulated solid phase epitaxy, Molecular Beam epitaxy, Mismatch epitaxy.

Academic Background

  • PhD (2004) (Materials Science): Indian Institute of Science, Bangalore, India
  • MSc (1999) (Physics) Jadavpur University, Kolkata, India

Work Experience

  • September 2014-Present: Associate Professor, Department of Electrical Engineering, IIT Bombay.
  • January 2012 – August 2014: Assistant Professor, Department of Electrical Engineering, IIT Bombay.
  • January 2009- December 2011: Group Leader, Institute of Electronic Materials and Devices (MBE), Leibniz University, Hannover,

Germany

  • January 2007 - December 2008: Senior Research Scientist, Institute of Electronic Materials and Devices (MBE), Leibniz

University, Hannover, Germany

  • May 2005 - December 2006: Alexander von Humboldt Research Fellow, Institute of Electronic Materials and Devices (MBE),

Leibniz University, Hannover, Germany.

  • July 2003 – February 2005: Research Associate, Indian Institute of Science Bangalore

Awards

  • Nominated among the best three researchers from Leibniz Universität Hannover for Heinz-Maier-Leibnitz-Price of German Research

Foundation (DFG)

  • International Einstein Award for Scientific Achievement by International Biographical Center, Cambridge, England
  • Cited in Marquis Who’s Who in Science, 2010 edition.
  • Alexander von Humboldt Research Fellowship, 2005.
  • Best Poster Award in the National Seminar on Ferroelectrics and Dielectrics (NSFD) 2002, Bangalore, India.
  • National Talent Scholarship (1993) awarded by Govt. of West Bengal, India
  • Member of editorial board, ISRN Material Science, Hindawi Publishing Corp

Students

* Kankat Ghosh (PhD)
* Sudipta Das (PhD)
* Ravindra Singh Pokharia (PhD)
* Ritam Sarkar (PhD)
* Souvik Datta (PhD)
* Hanuman Bana (PhD)(with Prof. A. Tulapurkar, EE, IITB)
* Swagata Bhunia (PhD)
* Santosh Verma (PhD)

Research Publications

* Refereed Journals and Conf. Proceedings: 84, h-index: 18, i10-index: 28 (Google Scholar)
* Book chapters: 2
* Invited talks: 20
* Conference contribution: 60

Selected publications

49. S. Das, K. R Khiangte, R. S. Fandan, J. S. Rathore, R. S. Pokharia, S. Mahapatra and A. Laha “On the correlation of growth, structural and electrical properties of epitaxial Ge grown on Si by solid source molecular beam epitaxy” Current Applied Physics 17 327 (2017).

48. K Ghosh, J. S. Rathore and A. Laha “Tuning the effective band gap and finding the optimal growth condition of InN thin films on GaN/sapphire substrates by plasma assisted molecular beam epitaxy technique” Superlattices and Microstructures 101,405-414 (2017).

47. Nikhilendu Tiwary, Ritam Sarkar, V Ramgopal Rao, Apurba Laha “CPiezoresponse force microscopy (PFM) characterization of GaN nanowires grown by Plasma assisted Molecular beam epitaxy (PA-MBE)” 2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop (ISAF/ECAPD/PFM).

46. Kankat Ghosh, Sudipta Das, Andreas Fissel, H. Jörg Osten, and Apurba Laha: “Long-Term Stability of Epitaxial (Nd1−xGdx)2O3 Thin Films Grown on Si(001) for Future CMOS Devices” IEEE TRANSACTIONS ON ELECTRON DEVICES, 63 (7), 2852 (2016).

45. Ritam Sarkar, R Fandan, Krista R Khiangte, S Chouksey, AM Josheph, S Das, S Ganguly, D Saha, Apurba Laha: “Comprehensive investigation on the correlation of growth, structural and optical properties of GaN nanowires grown on Si (111) substrates by plasma assisted molecular beam epitaxy technique” arXiv preprint arXiv:1603.08603

44. S. Manna, R. Aluguri, A. Katiyar, S. Das, A. Laha, H.J. Osten, and S. K. Ray: “MBE grown Si and Si1-xGex quantum dots embedded within epitaxial Gd2O3 on Si (111) substrate for floating gate memory device” Nanotechnology 24 (2013) 505709 “http://nanotechweb.org/cws/article/lab/55431

43. Kankat Ghosh, Sudipta Das, A. Fissel, H.J. Osten, and Apurba Laha: “Epitaxial Gd2O3 on strained Si1-xGex virtual substrate for next generation complementary metal oxide semiconductor device application” Appl. Phys. Lett. 103 (2013) 153501-1/4

42. Apurba Laha, Andreas Fissel, and H. Joerg Osten. “Effective control on flat band voltage of epitaxial lanthanide oxide based MOS capacitors by interfacial carbon” Applied Physics Letters 102 (2013) 202902-1/3

41. Ke Xu, R. Ranjith, A.P. Milanov, H. Parala, R.A. Fischer, A. Laha, E. Bugiel, J. Feydt, S. Irsen, T. Toader, C. Bock, D. Rogalla, H.J. Osten, U. Kunze, and A. Devi: “Atomic layer deposition of Gd2O3 and Dy2O3: A study on the ALD characteristics, structural and electrical properties” Chemistry of Materials 24 (2012) 651.

40. Apurba Laha, Bin Ai, P. R. P. Babu, Andreas Fissel, and H. Joerg Osten. “Impact of carbon incorporation into epitaxial Gd2O3 thin films on silicon: An experimental study on electrical properties” Applied Physics Letters 99 (2011) 152902-1/3

39. Apurba Laha, A. Fissel and H. J. Osten Effect of Ge passivation on interfacial properties of crystalline Gd2O3 thin films grown on Si substrates Applied Physics Letters 96 (2010) 072903-1/3.

38. A. P. Milanov, K. Xu, A. Laha, E. Bugiel, R. Ranjith, D. Schwendt, H. J. Osten, H. Parala, R. A. Fischer, A. Devi Growth of crystalline Gd2O3 thin films with high quality interface on Si(100) by low temperature H2O assisted atomic layer deposition J. Am. Chem. Soc. 132 (2010) 36-37.

37. A. Fissel, R. Dargis, E. Bugiel, D. Schwendt, T. Wietler, J. Krügener, A. Laha, H.J. Osten JACS Single-crystalline Si grown on single-crystalline Gd2O3 by modified solid-phase epitaxy Thin Solid Films 518 (2010) 2546-2550.

36. A. Laha, E. Bugiel, M. Jestremski, R. Ranjith, A. Fissel, and H.J. Osten, Encapsulated solid phase epitaxy of a Ge quantum well embedded in an epitaxial rare earth oxide Nanotechnology 20, (2009) 475604 (***one of the top 10 research publications in Nanotechnology during last two years, source: www.bmlsearch.com).

35. V. V. Afanas’ev, M. Badylevich, A. Stesmans, A. Laha, H.J. Osten, and A. Fissel: Size-dependent interface band alignment between Si nanocrystals and lattice-matched Gd2O3 Appl. Phys. Lett. 95 (2009)102107-1/3

34. T. F. Wietler, A. Laha, E. Bugiel, M. Czernohorsky, R. Dargis, A. Fissel, and H.J. Osten: Epitaxial growth of Gd2O3 on Ge films grown by surfactant-mediated epitaxy on Si(001) substrates Solid State Electronics 53 (2009) 833-836 33. J. Wang, A. Laha, A. Fissel, D. Schwendt, R. Dargis, T. Watahiki, R. Shayduka, W. Braun,T.M. Liu, and H. J. Osten: Crystal structure and strain state of molecular beam epitaxial grown Gd2O3 on Si(1 1 1) substrates: a diffraction study Semiconductor Science and Technology 24 (2009) 045021.

32. H.J. Osten, A. Laha, M. Czernohorsky, E. Bugiel, R. Dargis, and A. Fissel: Introducing crystalline rare-earth oxides into Si technologies physica status solidi (a) 205 (2008) 695.

31. A. Laha, E. Bugiel, H. J. Osten, and A. Fissel: Epitaxial Rare Earth Oxide Thin Film: Potential Candidate for Future Microelectronic Devices In Rare Earths: Research and Applications Editor: Keith N. Delfrey, Nova Science Publishers, Inc. 2008, pp. 301.

30. Qing-Qing Sun, A. Laha, Shi-Jin Ding, D. W. Zhang, H. J. Osten, A. Fissel: Effective Passivation of Intrinsic Dangling Bonds at the Interface of Single Crystalline Gd2O3 and Si(100) Appl. Phys. Lett. 92 (2008) 152908.

29. Qing-Qing Sun, A. Laha, Shi-Jin Ding, D. W. Zhang, H. J. Osten, and A. Fissel: Observation of near interface oxide traps in single crystalline Nd2O3 on Si(111) by quasistatic C-V method Appl. Phys. Lett. 93 (2008) 083509.

28. A. Laha, E. Bugiel, J. X. Wang, Q. Q. Sun, A. Fissel, and H. J. Osten: Effect of domain boundaries on the electrical properties of crystalline Gd2O3 thin film Appl. Phys. Lett. 93 (2008) 182907.

27. V. V. Afanas’ev, M. Badylevich, A. Stesmans, A. Laha, H. J. Osten, A. Fissel, W. Tian, L. F. Edge, and D. G. Schlom: Band offsets between Si and epitaxial rare earth sesquioxides (RE2O3, RE=La, Nd, Gd, Lu): Effect of 4f-shell occupancy Appl. Phys. Lett. 93 (2008) 192105.

26. A. Laha, D. Kühne, E. Bugiel, A. Fissel, and H. J. Osten: Embedding silicon nanoclusters into epitaxial rare earth oxide for nonvolatile memory applications Semiconductor Science and Technology 23 (2008) 085015.

25. A. Laha, A. Fissel, E. Bugiel, and H.J. Osten: Epitaxial multi-component rare earth oxide for high-K application Thin Solid Films 515 (2007) 6512.

24. A. Laha, A. Fissel, and H.J. Osten: Influence of interface layer composition on the electrical properties of epitaxial Gd2O3 thin films for high-K application Appl. Phys. Lett. 90 (2007) 113508.

23. H.J. Osten, D. Kühne, A. Laha, M. Czernohorsky, E. Bugiel, and A. Fissel: Integration of functional epitaxial oxides into silicon: From high-K application to nanostructures J. Vac. Sci & Techn. B 25 (2007) 1039.

22. A. Laha, A. Fissel, and H.J. Osten: Engineering the interface between epitaxial lanthanide oxide thin films and Si substrates: a route towards tuning the electrical properties Microelectronic Engineering 84 (2007) 2282.

21. M. Badylevich, S. Shamuilia, V. V. Afanas’ev, A. Stesmans, A. Laha, H. J. Osten, and A. Fissel: Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientations Appl. Phys. Lett. 90 (2007) 252101

20. H.J.Osten, A. Laha, , E. Bugiel, D. Schwendt, and A.Fissel Crystalline rare-earth oxides as high-κ materials for future CMOS technologies ECS Transactions 11(2007) 287-297

19. A. Laha, H.J. Osten, A. Fissel: Impact of Si substrate orientations on electrical properties of crystalline Gd2O3 thin films for high-K application Appl. Phys. Lett. 89 (2006) 143514:

18. A. Laha, E. Bugiel, H. J. Osten, A. Fissel: Crystalline ternary rare-earth oxide with capacitance equivalent thickness below 1 nm for high-K application” Appl. Phys. Lett. 88 (2006) 172107:

17. A. Laha, S. B. Krupanidhi, A. Balamurugan, S. Rajagopalan and S. Tyagi: Dielectric phase-transition and polarization studies in stepped and compositionally graded lead magnesium niobate–lead titanate relaxor thin films J. Appl. Phys. 98 (2005) 014105

16. R. Ranjith, Apurba Laha, and S. B. Krupanidhi l: Enhanced tunability and phase transition studies in compositionally varying lead magnesium niobate–lead titanate multilayered thin films Appl. Phys. Lett. 86 (2005) 092902

15. A. R. Chaudhuri A. Laha, S.B. Krupanidhi: Enhanced ferroelectric properties of vanadium doped bismuth titanate (BTV) thin films grown by pulsed laser ablation technique, Solid State Communication, 133 (2005) 611

14. P. Venkateswarlu, A. Laha, and S. B. Krupanidhi: Dielectric Study of La doped PbTiO3 thin films grown by pulsed laser abltation technique Thin Solid Films 474 (2005)1

13. A. Laha, S. Bhattacharyya, and S. B. Krupanidhi: Impact of Microstructure on Dielectric properties of 0.7Pb(Mg1/3Nb2/3)O3 - 0.3PbTiO3 Thin Films Mat. Sci. Engg. B 106 (2004)111

12. A. Laha and S. B. Krupanidhi: Field Induced Dielectric Response of 0.7Pb(Mg1/3Nb2/3)O3 - 0.3PbTiO3 Thin Films Mat. Sci. Engg. B 113(2004)190

11. A. Laha, S. Saha and S. B. Krupanidhi,: Role of La0.5Sr0.5CoO3 template layers on dielectric and electrical properties of pulsed-laser ablated Pb(Nb2/3Mg1/3)O3 - PbTiO3 thin films Thin Solid Films, 424 (2003) 274

10. A. Laha and S. B. Krupanidhi: Dielectric Response and Impedance Spectroscopy of 0.7Pb(Mg1/3Nb2/3)O3 - 0.3PbTiO3 Thin Films Mat. Sci. Engg. B 98, 204 (2003)

9. P. Venkateswarlu, A. Laha, and S. B. Krupanidhi: Relaxor like behavior of La doped PbTiO3 thin films grown by pulsed laser ablation technique Solid State Communication, 127 (2003) 247

8. P. Venkateswarlu, A. Laha, and S. B. Krupanidhi,: Effect of AC and DC Field on the Dielectric Response of (Pb,La)TiO3 Thin Films Integrated Ferroelectrics, 52 (2003) 665

7. A. Laha, P. Victor and S. B. Krupanidhi: Study of relaxor behavior of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 thin films Integrated Ferroelectrics, 46 (2002)143

6. A. Laha and S. B. Krupanidhi: Leakage current conduction of pulsed excimer laser ablated BaBi2 Nb2 O9 thin films J. Appl. Phys. 91(2002) 415

5. S. Bhattacharyya, A. Laha, and S. B. Krupanidhi: Analysis of leakage current conduction phenomenon in SrBi2Ta2O9 films grown by excimer laser ablation J. Appl. Phys. 91 (2002) 4543

4. S. Bhattacharyya, A. Laha, P. Victor and S. B. Krupanidhi: The thickness dependence of the electrical and dielectric properties in the laser ablated SrBi2Nb2O9 thin films Integrated Ferroelectrics 50 (2002)159

3. S. Bhattacharyya, A. Laha, and S. B. Krupanidhi: Impact of Sr content on dielectric and electrical properties of pulsed laser ablated SrBi2Ta2O9 thin films J. Appl. Phys. 92 (2002) 1056

2. S. Bharadwaja, A. Laha, S. Halder and S. B. Krupanidhi: Reversible and irreversible switching processes in pure and lanthanum modified lead zirconate thin films Mat. Sci. Engg. B 94 (2002) 218

1. A. Laha and S. B. Krupanidhi: Growth and characterization of excimer laser-ablated BaBi2Nb2O9 thin films Appl. Phys. Lett. 77 (2000) 3818

 
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