Nanoelectronics Building, 6th Floor
Department of Electrical Engineering
IIT Bombay, Mumbai, India
Email : sganguly[AT]ee.iitb.ac.in
Phone: +91 22 25767403 (Office)

https://www.google.com/calendar/embed?src=swaroop.ganguly%40gmail.com&ctz=Asia/Mumbai

• Chief Investigator, Nanoelectronics Network for Research and Applications (earlier Centre of Excellence in Nanoelectronics) IIT Bombay, 2016 – present.
• Co-Professor-in-Charge, IIT Bombay Research Park, 2015 – 2019.
• Co-Author, Solid State Devices section of ICT, TIFAC Technology Vision 2035, 2016.
• Member, FICCI Space Committee, 2018 – present.
• IIT Bombay faculty liaison for National Chaio Tung University (Taiwan), 2016 – present.
• Member-Convener, Alumni & Corporate Outreach Committee, Department of Electrical Engineering, IIT Bombay, 2018 – present.
• Member, Executive Committee, Parimal and Pramod Chaudhari Centre for Learning and Teaching, IIT Bombay, 2018 – present.

• Ph.D. (2005) University of Texas at Austin
• MSE (2001) University of Texas at Austin
• B.Tech. (1999) IIT Kharagpur

• Professor, IIT Bombay, Dec 2018 - present
• Visiting Faculty, National Chaio Tung University, Sep 2018 - present
• Associate Professor, IIT Bombay, Sep 2014 - present
• Assistant Professor, IIT Bombay, Jul 2009 - Aug 2014
• Visiting Scientist, IBM T.J. Watson Research Center, May 2010 - Jul 2010
• Post-doctoral Fellow, University of Texas at Austin, Aug 2008 - Jul 2009
• Research Scientist, Tokyo Electron Limited, Feb 2006 - Jul 2008 (assigned to IMEC Jul 2006 - Jul 2008)
• R&D Engineer, Freescale Semiconductor (earlier Motorola SPS), May 2005 - Feb 2006 (Intern in 2002, 2003, 2004)

• Member, Executive Committee, Parimal and Pramod Chaudhari Centre for Learning and Teaching, 2018 – present.
• Member, Inter-Disciplinary Program in Educational Technology, 2016 – present.
• Co-Author, Solid State Devices section, TIFAC Technology Vision 2035, 2016.
• IIT Bombay Research Paper Award, 2015.
• IBM-IUSSTF Fellowship in Nanotechnology, 2009.
• IEEE Golden List, 2004.
• Jagadis Bose National Science Talent Search Scholar, 1995 - 1999.
• National Talent Search Scholar, 1993 - 1995.

• https://www.thehindu.com/sci-tech/iit-bombay-new-way-to-characterise-thickness-of-layered-2d-materials/article25642886.ece
• https://www.thehindu.com/sci-tech/technology/an-electronic-nose-from-iit-bombay/article22480820.ece
• https://www.thehindu.com/sci-tech/science/iit-bombay-birds-eye-view-and-quantum-biology/article18191268.ece

• Prospective postdoctoral fellows: in the area of Quantum Biomimetic Electronic Nose (required: strong grasp of and interest in some subset of the following - nanoscale device physics and fabrication, ab initio materials modeling, biophysics, sensor electronics, machine learning) or Transistor Physics & Modeling (required: strong grasp of and interest in solid-state devices, interest in device modeling for high-speed and high-power applications all the way from ab initio materials modeling to system modeling)
• Prospective Ph.D. students: same as above
• Prospective M.Tech. students: same as above
• Prospective Research Assistants (project staff): same as above
• Prospective (internal, i.e. IITB) interns: Drop me an email to set up an appointment
• Prospective (external, i.e. non-IITB) interns: Please apply for IITB Research Internship (http://www.iitb.ac.in/en/education/research-internship)

• Quantum Biomimetic Technologies

These are technologies inspired by Quantum Biology - the study of biological systems where quantum mechanics might be playing a non-trivial role. Our earlier work here was on the Avian Compass - terrestrial magnetic field sensing by migratory birds which enables their navigation, and biomimetic magnetic field sensing based on similar principles. At this time, we are focused in particular on Quantum Biomimetic Olfaction, aka Quantum Electronic Nose. Police dogs sniffing for drugs or explosives at public hubs hint at the fact that our electronic nose sensors are yet to achieve the power of biological olfaction, the sense of smell. Realization of such sensitivity in man-made sensors would be a path-breaking development for myriad applications, like food/agri-tech, industrial automation, healthcare, environment, and defence/aerospace. The short-to-medium term goal is to design and realize an electronic nose sensor inspired by biological olfaction, specifically the Vibration Theory of Olfaction (which posits that it is transduced by an inelastic tunneling process). Our work has spanned atomistic device design, sensor circuitry design, and application of machine learning for odorant classification. The long-term vision here is to digitize smell, i.e. to convert olfactory information into electrical signals, to store communicate and recreate it - similar to what we routinely do with audio and visual information today.

• Semiconductor Modeling & Simulation - from Materials to Devices to Circuits

Our earlier work here mostly targeted next-generation (silicon/germanium based) logic/memory transistor technologies. These days, it is oriented more towards wide-bandgap material (e.g. GaN, SiC) based transistors for high-speed and high-power applications. Our interest has been to connect materials modeling to device design, and device design to circuit simulation. We use a combination of commercial simulation tools as well as simple tools developed in-house (e.g. MATLAB based, especially for aspects of device modeling). The overarching goal here is to relate emerging physical effects at the material or device level to their circuit-level impact.

• “Nanoelectronics Network for Research and Applications IIT Bombay”, Ministry of Electronics & Information Technology + Department of Science & Technology, 2018 – 2022.

• “AlGaN/GaN power transistor based platform technology and modules for smart-grid applications”, Department of Science & Technology (Mission Innovation), 2018 – 2021.

• “Development of GaN HEMT Based Power Electronic Interfaces Enabled by Device-to-System Characterization and Modeling”, MHRD + DST (IMPRINT), 2017 - 2020.

• “Growth and Characterization of AlGaN/GaN Heterostructure by Plasma Assisted Molecular Beam Epitaxy (PA-MBE) Technique for High Mobility Electron Transistor”, ISRO, 2017 - 2020.

• “Development of Ohmic Contact and Schottky Contact on Gallium Nitride (GaN) HEMT”, ISRO, 2015 - 2017.

• “IIT Bombay Research Park”, MHRD, 2014 - 2019.

• “Indian Nanoelectronics Users Programme”, Department of Electronics & Information Technology, 2013 – 2018.

• “Si/SiGe/Ge Vertical Gate All Around Transistor Pathfinding Project”, Applied Materials, 2013 - 2016

• “Centre of Excellence in Nanoelectronics”, Department of Electronics & Information Technology, 2011 – 2016.

• “Germanium Transistor Pathfinding Project”, Applied Materials, 2011 – 2013.

• “Modelling and simulation of germanium-based devices”, Synopsys Inc., 2011 – 2013.

• “Silicon-compatible spintronic devices”, Department of Science & Technology, 2010 – 2013.

• “Metal nanocrystals for flash memory technologies”, Semiconductor Research Corporation, 2010 – 2013.

• “Modelling and Simulation of Advanced NVM Devices”, Micron Technology, 2009 – 2012.

• “Semiconductor-based spintronic devices and circuits”, IRCC IIT Bombay, 2009 – 2012.

1. Nidhi Pandey, Debasattam Pal, Dipankar Saha, Swaroop Ganguly, “Vibration-based biomimetic odor classification”, Scientific Reports (2021).
2. S. Nayak, S. Lodha, S. Ganguly, “Stress Engineering for Drive Current Enhancement in Silicon Carbide (SiC) Power MOSFETs”, IEEE Journal of the Electron Devices Society (2021).
3. Ashutosh Mahajan and Swaroop Ganguly, “An analytical model for electron tunneling in triangular quantum wells”, Semiconductor Science and Technology (2021).
4. Rakshit Jain, Vishvendra S Poonia, Kasturi Saha, Dipankar Saha, Swaroop Ganguly, “The avian compass can be sensitive even without sustained electron spin coherence”, Proceedings of the Royal Society A (2021).
5. N. Bhardwaj, B. Upadhyay, Y. Yadav, S. Surapaneni, S. Ganguly, D. Saha, “Thermally grown Nb-oxide for GaN-based MOS-diodes”, Applied Surface Science (2021).
6. S Sreenadh, Jaya Jha, Vikas Pendem, Yogendra Kumar Yadav, Swaroop Ganguly, Dipankar Saha, “Low-field mobility in an electrostatically confined 2D rectangular nanowire: Effect of density of states and phonon confinement”, Nanotechnology (2021).
7. Tarni Aggarwal, Ankit Udai, Debashree Banerjee, Vikas Pendem, Shonal Chouksey, Pratim Saha, Sandeep Sankaranarayanan, Swaroop Ganguly, Pallab Bhattacharya, Dipankar Saha, “Investigation of Ultrafast Carrier Dynamics in InGaN/GaN‐based Nanostructures using Femtosecond Pump‐Probe Absorption Spectroscopy”, Physica Status Solidi B (2021).
8. Jaya Jha, Sreenadh Surapaneni, Akhil S Kumar, Swaroop Ganguly, Dipankar Saha, “Effect of width scaling on RF and DC performance of AlGaN/GaN-based Ku-band multi-finger 250 nm high electron mobility transistor technology”, Solid-State Electronics (2021).
9. Jaya Jha, Swaroop Ganguly, Dipankar Saha, “GaN-based complementary inverter logic gate using InGaN/GaN superlattice capped enhancement-mode field-effect-transistors”, Nanotechnology (2021).
10. Ritam Sarkar, Bhanu B Upadhyay, Swagata Bhunia, Ravindra S Pokharia, Dhiman Nag, S Surapaneni, Jori Lemettinen, Sami Suihkonen, Philipp Gribisch, Hans-Jörg Osten, Swaroop Ganguly, Dipankar Saha, Apurba Laha, “Epi-Gd₂O₃-MOSHEMT: A Potential Solution Toward Leveraging the Application of AlGaN/GaN/Si HEMT With Improved ION/IOFF Operating at 473 K”, IEEE Transactions on Electron Devices (2021).
11. Bazila Parvez, Jaya Jha, Pankaj Upadhyay, Navneet Bhardwaj, Yogendra Yadav, Bhanu Upadhyay, Swaroop Ganguly, Dipankar Saha, “Improvements From SiC Substrate Thinning in AlGaN/GaN HEMTs: Disparate Effects on Contacts, Access and Channel Regions”, IEEE Electron Device Letters (2021).
12. Dhiman Nag, Tarni Aggarwal, Shreekant Sinha, Ritam Sarkar, Swagata Bhunia, Yi-Fan Chen, Swaroop Ganguly, Dipankar Saha, Ray-Hua Horng, Apurba Laha, “Carrier-Induced Defect Saturation in Green InGaN LEDs: A Potential Phenomenon to Enhance Efficiency at Higher Wavelength Regime”, ACS Photonics (2021).
13. Suvendu Nayak, Boddepalli SanthiBhushan, Saurabh Lodha, Swaroop Ganguly, “Silicon carbide planar junctionless transistor for low-medium voltage power electronics”, Journal of Physics Communications (2021).
14. Sandeep Pandey, Manoj Karakoti, Karan Surana, Pawan Singh Dhapola, Boddepalli SanthiBhushan, Swaroop Ganguly, Pramod K Singh, Ali Abbas, Anurag Srivastava, Nanda Gopal Sahoo, “Graphene nanosheets derived from plastic waste for the application of DSSCs and supercapacitors”, Scientific Reports (2021).
15. Tarni Aggarwal, Swaroop Ganguly, Dipankar Saha, “Carrier Recovery from Sub-Bandgap States in a GaN-Based Quantum-Confined Structure: Identification of Carrier Reservoirs through Femtosecond Pump-Probe Spectroscopy”, The Journal of Physical Chemistry C (2021).
16. Vikas Pendem, Pratim Kumar Saha, Shonal Chouksey, Swaroop Ganguly, Dipankar Saha, “Nanosecond pulsed-bias-actuated and exciton-dynamics-induced chirp in InGaN/GaN LEDs towards realizing electrically-tunable broadband light emitters”, Journal of Luminescence (2021).
17. Narendra Rai, Ashutosh Mahajan, Dipankar Saha, and Swaroop Ganguly, “Efficient modeling of barrier resistance for an Improved Lumped Element Model of GaN-based MIS-HEMT gate stack”, IEEE Journal of the Electron Devices Society (2020).
18. Vikas Pendem, Pratim K. Saha, Shonal Chouksey, Swaroop Ganguly, and Dipankar Saha, “Nanosecond pulsed-bias-actuated and exciton-dynamics-induced chirp in InGaN/GaN LEDs towards realizing electrically-tunable broadband light emitters”, Journal of Luminescence (2020].
19. Y. Yadav, B. Upadhyay, J. Jha, S. Ganguly, and D. Saha, “Impact of Relative Gate Position on DC and RF Characteristics of High Performance AlGaN/GaN HEMTs”, IEEE Transactions on Electron Devices (2020).
20. Pratim K. Saha, Tarni Aggarwal, Ankit Udai, Vikas Pendem, Swaroop Ganguly, and Dipankar Saha, “Femto-second Carrier and Photon Dynamics in Site Controlled Hexagonal InGaN/GaN Isolated Quantum Dots: Natural radial potential well and its dynamic modulation”, ACS Photonics (2020).
21. Jaya Jha, Mudassar Meer, Swaroop Ganguly and Dipankar Saha, “Off-State Degradation and Recovery in Oxide/AlGaN/GaN Hetero-Interfaces: Importance of band-offset, electron and hole trapping”, ACS Applied Electronic Materials, (2020).
22. Shonal Chouksey, Pratim Saha, Vikas Pendem, Tarni Aggarwal, Ankit Udai, Swaroop Ganguly, and Dipankar Saha, “Femto-second transient absorption spectroscopy for probing near-surface carrier-photon dynamics in gallium nitride”, Applied Surface Science 518, 146225(2020).
23. D. Nag, Ritam Sarkar, S. Bhunia, Tarni Aggarwal, Kankat Ghosh, Shreekant Sinha, Swaroop Ganguly, Dipankar Saha, Ray-Hua Horng, and Apurba Laha, “Role of defect saturation in improving optical response from InGaN nanowires in higher wavelength regime”, Nanotechnology (2020).
24. Mihir Date, Sudipta Mukherjee, Joydeep Ghosh, Dipankar Saha, Swaroop Ganguly, Apurba Laha, Prasenjit Ghosh, “Efficient ab initio plus analytic calculation of the effect of GaN layer tensile strain in AlGaN/GaN heterostructures”, Japanese Journal of Applied Physics 58, 094001 (2019).
25. A. Rawat, V. Surana, S. Ganguly, and D. Saha, “Tensile Strain and Fermi Level Alignment in Thermally Grown TiO2 and Al2O3 Based AlGaN/GaN MOS-HEMTs”, Solid State Electronics (2019).
26. Mudassar Meer, Akanksha Rawat, Kuldeep Takhar, Swaroop Ganguly and Dipankar Saha, “Interface dynamics in ohmic contact optimization on AlGaN/GaN heterostructure by the formation of TiN”, Microelectronic Engineering 219, 111144 (2020).
27. Vivek Kumar Surana, Navneet Bhardwaj, Akanksha Rawat, Yogendra Kumar Yadav, Swaroop Ganguly, Dipankar Saha, “Realization of high quality silicon nitride deposition at low temperatures”, Journal of Applied Physics 126, 115302 (2019).
28. A. Rawat , V. Surana, M. Meer, N. Bhardwaj, S. Ganguly, and D. Saha, “Gate Current Reduction and Improved DC/RF Characteristics in GaN-Based MOS-HEMTs using Thermally Grown TiO2 as a Dielectric”, IEEE Transactions on Electron Devices (2019).
29. Ritam Sarkar, S. Bhunia, D. Nag, B. C. Barik, K. Das Gupta, D. Saha, S. Ganguly, Apurba Laha, Jori Lemettinen, Christoffer Kauppinen, Iurii Kim, Sami Suihkonen, Philipp Gribisch, and Hans-Jörg Osten, “Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application”, Appl. Phys. Lett. 115, 063502 (2019).
30. Vikas Pendem, Ankit Udai, Tarni Aggarwal, Swaroop Ganguly, Dipankar Saha, “Theoretical Modelling of Exciton Binding Energy, Steady-State and Transient Optical Response of GaN/InGaN/GaN and AlGaN/GaN/AlGaN Core-Shell Nanostructures”, Nanotechnology (2019).
31. D Nag, T Aggarwal, R Sarkar, S Bhunia, S Ganguly, D Saha, A Laha, “Engineering V-shaped pits in InGaN layers grown by PA-MBE toward optimizing the active region of green LEDs”, JOSA B 36 (3), 616-623 (2019).
32. Kuldeep Takhar, Bhanu B Upadhyay, Yogendra K Yadav, Swaroop Ganguly, and Dipankar Saha, “Al2O3 formed by post plasma oxidation of Al as a Gate dielectric for AlGaN/GaN MIS-HEMTs”, Applied Surface Science 481, 219 (2019).
33. Tarni Aggarwal, Vikas Pendem, Ankit Udai, Pratim Kumar Saha, Shonal Chouksey, Swaroop Ganguly, and Dipankar Saha, “Impact of DBR on Carrier and Photon Dynamics in GaN-based Surface Emitting Diodes Manifested by Ultrafast Transient Absorption Spectroscopy”, Japanese Journal of Applied Physics 58, (2019).
34. P. Harsha Vardhan, S. Ganguly, U. Ganguly, “An Accurate Expression to Estimate the Metal Gate Granularity Induced Threshold Voltage Variability in NWFETs”, Solid State Electronics (2019).
35. Shonal Chouksey, S Sreenadh, Swaroop Ganguly, Dipankar Saha, “Determination of Size Dependent Carrier Capture in InGaN/GaN Quantum Nanowires by Femto-second Transient Absorption Spectroscopy: Effect of Optical Phonon, Electron-Electron Scattering and Diffusion”, Nanotechnology 30, 194003 (2019).
36. Pratim Kumar Saha, Vikas Pendem, Shonal Chouksey, Tarni Aggarwal, Ankit Udai, Swaroop Ganguly and Dipankar Saha, “Enhanced Luminescence from InGaN/GaN Nano-disk in a wire Array Caused by Surface Potential Modulation during Wet Treatment”, Nanotechnology 30, 104001 (2019).
37. Y. Yadav, B. Upadhyay, M. Meer, S. Ganguly and D. Saha, “Ti/Au/Al/Ni/Au low contact resistance and sharp edge acuity for highly scalable AlGaN/GaN HEMTs”, IEEE Electron Dev. Lett. 40, 67 (2019).
38. Dhirendra Vaidya, Saurabh Lodha, and Swaroop Ganguly, “Electrical-Equivalent van der Waals Gap for Two-Dimensional Bilayers”, Physical Review Applied 10, 034070 (2018).
39. Joydeep Ghosh and Swaroop Ganguly, “Modeling and Simulation of AlGaN/InGaN/GaN Double Heterostructures Using Distributed Surface Donor States”, Japanese Journal of Applied Physics 57, 080305 (2018).
40. Ashlesha Patil, Dipankar Saha and Swaroop Ganguly, “A Quantum Biomimetic Electronic Nose Sensor”, Scientific Reports 8, 128 (2018).
41. Jaya Jha, Bhanu B. Upadhyay , Kuldeep Takhar, Navneet Bhardwaj, Swaroop Ganguly, and Dipankar Saha, “Evolution of Field Dependent Carrier Trapping during Off-state Degradation for GaN Based Metal Oxide Semiconductor High Electron Mobility Transistors”, Jour. of Appl. Phys. 124, 165704 (2018).
42. A. Rawat , M. Meer, V. Surana, N. Bhardwaj, V. Pendem, N. Garigapati, Y. Yadav, S. Ganguly, and D. Saha, “Thermally Grown TiO2 and Al2O3 for GaN Based MOS-HEMTs”, IEEE Transactions on Electron Devices 65, 3725 (2018).
43. Sandeep Sankaranarayanan, Shonal Chouksey, Pratim Saha, Vikas Pendem, Ankit Udai, Tarni Aggarwal, Swaroop Ganguly, and D. Saha, “Determination of strain relaxation in InGaN/GaN nanowalls from quantum confinement and exciton binding energy dependent photoluminescence peak”, Sci. Rep. 8, 8404 (2018).
44. B. Upadhyay, K. Takhar, J. Jha, S. Ganguly, and D. Saha, “Surface Stoichiometry Modification and Improved DC/RF Characteristics by Plasma Treated and Annealed AlGaN/GaN HEMTs”, Solid State Elec., 141, 1 (2018).
45. Vishvendra Poonia, Dipankar Saha and Swaroop Ganguly, “Quantum Biomimetic Modeling of Diamond NV– Center Spin Dynamics”, IEEE Transactions on Nanotechnology (2018).
46. Joydeep Ghosh,Dipankar Saha, Swaroop Ganguly, and Apurba Laha, “Charge Density and Bare Surface Barrier Height in GaN/AlGaN/GaN Heterostructures: A Modeling and Simulation Study”, Journal of RF and Microwave Computer-Aided Engineering 28, e21455 (2018).
47. B. Upadhyay, J. Jha, K. Takhar, S. Ganguly, and D. Saha, “Geometric contribution leading to anomalous estimation of two-dimensional electron gas density in GaN based heterostructures”, Journal of Applied Physics 123, 205702(2018).
48. Kapil K. Sharma and Swaroop Ganguly, “Positive impact of decoherence on spin squeezing in GHZ and W states” J. Phys. Commun., 2, 015012 (2018).
49. S. Mittal, Amita, S. Ganguly, U. Ganguly, “Analytical Model to estimate FinFET’s ION, IOFF, SS and VT distribution due to FER” IEEE Transactions on Electron Devices, 64 (8), 3489 (2017).
50. P. Harsha Vardhan, S. Mittal, S. Ganguly, and U. Ganguly “Analytical Estimation of Threshold Voltage Variability by Metal Gate Granularity in FinFET”, IEEE Transactions on Electron Devices 64 (8), 3071 (2017).
51. Vishvendra Poonia, Kiran Kondabagil, Dipankar Saha and Swaroop Ganguly, “Functional Window of the Avian Compass”, accepted for publication in Phys. Rev. E 95, 052417 (2017).
52. Dhirendra Vaidya, Saurabh Lodha and Swaroop Ganguly, “Ab-initio Study of NiGe/Ge Schottky Contact”, Journal of Applied Physics 121, 145701 (2017).
53. Bhanu B. Upadhyay, Kuldeep Takhar, Jaya Jha, Swaroop Ganguly, Dipankar Saha, “Surface stoichiometry modification and improved DC/RF characteristics by plasma treated and annealed AlGaN/GaN HEMTs”, Solid State Electronics (2017).
54. S. Chouksey, S. Sankaranarayanan, V. Pendem, P. K. Saha, S. Ganguly, and D. Saha, “Strong Size Dependency on the Carrier and Photon Dynamics in InGaN/GaN Single Nanowalls Determined Using Photoluminescence and Ultrafast Transient Absorption Spectroscopy”, Nanoletters (2017).
55. P. Saha, S. Chouksey, S. Ganguly, and D. Saha, “Temperature independent optical transition with sub-nanometer linewidth in thermally diffused Gd in GaN”, Optics Letters 42, 2161 (2017).
56. Mudassar Meer, Sridhar Majety, Kuldeep Takhar, Swaroop Ganguly and Dipankar Saha, “Impact of Wet-oxidized Al2O3/AlGaN Interface on AlGaN/GaN 2-DEGs”, Semiconductor Science and Technology 32, 04LT02 (2017).
57. K. Takhar, M. Meer, B. B. Upadhyay, S. Ganguly and D. Saha, “Performance Improvement and Better Scalability of Wet-Recessed and Wet-Oxidized AlGaN/GaN High Electron Mobility Transistors”, Solid State Electronics 131C, 39 (2017).
58. S. Kothari, C. Joishi, D. Biswas, D. Vaidya, S. Ganguly and S. Lodha, “Improved n-channel Ge gate stack performance using HfAlO high-k dielectric for varying Al concentration”, Applied Physics Express 9, 071302 (2016).
59. D Banerjee, S Sankaranarayanan, D Khachariya, M B Nadar, Swaroop Ganguly and Dipankar Saha, “Superluminescent light emitting diodes on naturally survived InGaN/GaN lateral nanowires”, Applied Physics Letters 109, 031111 (2016).
60. Biswajit Saha, Pragati Chaturvedi, Anil K. Yadav, Dipankar Saha and Swaroop Ganguly, “Pulsed laser deposition of highly oriented stoichiometric thin films of topological insulator Sb2Te3”, Journal of Vacuum Science and Technology B 34, 021806 (2016).
61. Sundara Murthy Mopurisetty, Mohit Bajaj and Swaroop Ganguly , “Beyond optical enhancement due to embedded metal nanoparticles in thin-film solar cells”, Applied Physics Express 9, 032301 (2016).
62. A. S. Kumar, D. Khachariya, M. Meer, S. Ganguly and D. Saha, “Fringe field control of one-dimensional room temperature sub-band resolved quantum transport in site controlled AlGaN/GaN lateral nanowires”, Physica Status Solidi A: Applications and Material Science 214, 1600620 (2016).
63. K. Takhar, A Kumar S, M. Meer, B. Upadhyay, D. Khachariya, P. Upadhyay, S. Ganguly, and D. Saha, “Source Extension Region Scaling for AlGaN/GaN High Electron Mobility Transistors using non-nalloyed Ohmic Contacts”, Solid State Electronics 122, 70 (2016).
64. P. Chaturvedi , S. Chouksey , D. Banerjee , S. Ganguly, and D. Saha, “Carrier and photon dynamics in a topological insulator Bi2Te3/GaN type II staggered heterostructure”, Appl. Phys. Lett. 107, 192105 (2015).
65. D. Banerjee , K. Takhar , S. Sankaranarayanan , P. Upadhyay , R. Ruia , S. Chouksey , D. Khachariya , S. Ganguly, and D. Saha, “Electrically injected ultra-low threshold room temperature InGaN/GaN-based lateral triangular nanowire laser”, Appl. Phys. Lett. 107, 101108 (2015).
66. V.S. Poonia, D. Saha, and S. Ganguly, “State transitions and decoherence in the avian compass”, Phys. Rev. E 91, 052709 (2015).
67. S.M. Mopurisetty, M. Bajaj, N.D. Sathaye, S. Ganguly, “Coupled optical and electrical analysis for thin-film solar cells with embedded dielectric nanoparticles”, Applied Physics Letters 106 (2), 021120 (2015).
68. P. Upadhyay, M. Meer, K. Takhar, D. Khachariya, A. Kumar S, D. Banerjee, S. Ganguly, A. Laha and D. Saha, “Improved Ohmic contact to GaN andAlGaN/GaN two-dimensional electron gas using trap assisted tunneling by B implantation”, physica status solidi (b) 1-7 (2015).
69. Kuldeep Takhar, Mudassar Meer, Dolar Khachariya, Swaroop Ganguly and Dipankar Saha, “Observation of quantum oscillation of work function in ultrathin-metal/semiconductor junctions”, J. Vac. Sci. Technol. A 33, 05E126 (2015).
70. S. Sankaranarayanan, S. Ganguly and D. Saha, “Polarization Modulation in GaN Based Double Barrier Resonant Tunneling Diodes”, Applied Physics Express 7, 095201 (2014).
71. R. Adari, D. Banerjee, S. Ganguly, and D. Saha, “Fermi-level depinning at metal/GaN interface by an insulating barrier”, Thin Solid Films 550, 564 (2014).
72. Saurabh Sant, Saurabh Lodha, Udayan Ganguly, Souvik Mahapatra, Frederick O. Heinz, Lee Smith, Victor Moroz and Swaroop Ganguly, “Band gap bowing and band offsets in relaxed and strained Si1-xGex alloys by employing a novel non-linear interpolation scheme”, Journal of Applied Physics 113, 033708 (2013).
73. D. Banerjee, R. Adari, S. Sankaranarayan, A. Kumar, S. Ganguly, R. W. Aldhaheri, M. A. Hussain, A. S. Balamesh, and D. Saha, “Electrical Spin Injection using GaCrN in a GaN based Spin Light Emitting Diode”, Appl. Phys. Lett. 103, 242408 (2013).
74. P. Suggisetti, D. Banerjee, R. Adari, N. Pande, T. Patil, S. Ganguly and D. Saha, “Room temperature ferromagnetism in thermally diffused Cr in GaN”, AIP Advances 3, 032143 (2013).
75. Rama Adari, Debashree Banerjee, Swaroop Ganguly and Dipankar Saha, “Memory elements using multiterminal magnetoresistive devices”, Applied Physics Express 6, 043002 (2013).
76. D. Banerjee, R. Adari, T. Pramanik, S. Ganguly and D. Saha, “Effect of Device Geometry on Output Circular Polarization in a Spin-LED”, IEEE Transactions on Magnetics 48, 2761 (2012).
77. A. Kamath, T. Patil, R. Adari, I. Bhattacharya, S. Ganguly, R.W. Aldaheri, M.A. Hussain and D. Saha, “Double channel AlGaN/GaN High Electron Mobility Transistor with Back Barrier IEEE Electron Device Letters 33, 1690 (2012).
78. Suresh Gundapaneni, Mohit Bajaj, Rajan K. Pandey, Kota V. R. M. Murali, Swaroop Ganguly and Anil Kottantharayil, “Effect of Band-to-Band Tunneling on Junctionless Transistors”, IEEE Transactions on Electron Devices 59, 1023 (2012).
79. Yaksh Rawal, Maryam Shojaei Baghini, and Swaroop Ganguly “Fabrication and characterization of new Ti-TiO2-Al and Ti-TiO2-Pt tunnel diodes”, Active and Passive Electronic Components, 694105 (2012).
80. D.A. Ferrer, S. Guchhait, H. Liu, F. Ferdousi, C. Corbet, H. Xu, M. Doczy, G. Bourianoff, L. Mathew, R. Rao, S. Saha, M. Ramon, S. Ganguly, J.T. Markert and S.K. Banerjee, “Origin of shape anisotropy effects in solution-phase synthesized FePt nanomagnets”, J. Appl. Phys. 110, 014316 (2011).
81. S. Gundapaneni. S. Ganguly, and A. Kottantharayil, “Enhanced electrostatic integrity of short-channel junctionless transistor with high-k spacer”, IEEE Elec. Dev. Lett. 32, 1325 (2011).
82. S. Gundapaneni, S. Ganguly, W. Van Roy, S. Kaushal and K. Sugishima, “Effect of sputtering on ferromagnet-oxide-silicon spin injection contacts”, J. Vac. Sc. & Tech. B 29, 040602 (2011); JVSTB top-downloaded: http://avspublications.org/jvstb/top_20_most_downloaded?month=9&year=2011 http://avspublications.org/jvstb/top_20_most_downloaded?month=7&year=2011
83. S. Gundapaneni. S. Ganguly, and A. Kottantharayil, “Bulk Planar Junctionless Transistor (BPJLT): An attractive device alternative for scaling”, IEEE Elec. Dev. Lett. 32, 261 (2011); Synopsys Newsletter: http://www.synopsys.com/Community/Universityprogram/pages/NewsletterJul11.aspx
84. D. Banerjee, R. Adari, M. Murthy, S.Ganguly, and D. Saha, “Modulation bandwidth of a spin laser”, J. Appl. Phys. 109, 07C317 (2011).
85. R. Adari, T. Patil, S. Murthy, S. Ganguly, and D. Saha, “Enhanced magnetoresistance in lateral spin-valves”, Appl. Phys. Lett. 97, 112505 (2010).
86. Swaroop Ganguly, L.F.Register, A.H.MacDonald and S.K.Banerjee, “Scattering Dependence of Magnetization Switching in Ferromagnetic Resonant Tunneling Diodes”, Phys. Rev. B 74, 153314 (2006); VJ Nano. Sci. Tech.
87. Swaroop Ganguly, L.F.Register, A.H.MacDonald, S.K.Banerjee, “Two-level Voltage Controlled Magnetization Switch Using a Ferromagnetic Semiconductor Resonant-tunneling Diode”, IEEE Trans. Nanotech. 5 (1), 30,(2006).
88. Swaroop Ganguly, S.Banerjee, L.F.Register and A.H.MacDonald, “Intrinsic Curie Temperature Bistability in Ferromagnetic Resonant Tunneling Diodes”, Phys. Rev. B. 73, 033310 (2005); VJ Nano. Sci. Tech.
89. Swaroop Ganguly, S.Banerjee, L.F.Register and A.H.MacDonald, “Bias Voltage Controlled Magnetization Switch in Ferromagnetic Semiconductor Resonant Tunneling Diodes”, Phys. Rev. B. 71, 245306 (2005); VJ Nano. Sci. Tech.
90. Swaroop Ganguly, Li Lin, Puneet Kohli, Hong-Jyh Li, Taras Kirichenko, Raghu Srinivasa, Vikas Agarwal, Sanjay Banerjee, “Comparison of Low Energy BF2, BCl2 and BBr2 Implants for the Fabrication of Ultrashallow P+/N Junctions”, Journal of Applied Physics, 91(4), 2023, (2002).
91. P.Kohli, S.Ganguly, T.Kirichenko, H-J.Li, S.Banerjee, E.Graetz, M.Shevelev, “Microwave Annealing for Ultra-shallow Junction Formation”, Journal of Electronic Materials, 31(3), 214, (2002).
92. H-J.Li, P.Kohli, S.Ganguly, T.Kirichenko, S.Banerjee, P.Zeitzoff, “B diffusion in Si in presence of other species”, Applied Physics Letters 77(17), 2683, (2000).

1. Suvendu Nayak, Saurabh Lodha, Swaroop Ganguly, “Fully/partially suspended gate SiC-based FET for power applications” IEEE LAEDC, (Virtual) April 2021.
2. Suvendu Nayak, Saurabh Lodha, Swaroop Ganguly, “Hybrid gate dielectric with Si3N4 stressor for LDMOSFET”, IEEE LAEDC, (Virtual) April 2021.
3. Sudipta Mukherjee, Kasturi Saha, Dipankar Saha, Apurba Laha, Swaroop Ganguly, “Loss Reduction in a Grid-Connected Photovoltaic System Operated with P-&-O Algorithm based MPPT Control by introducing Diamond MOSFET”, International Symposium on Devices, Circuits and Systems, (Virtual) March 2021.
4. Sudipta Mukherjee, Dipankar Saha, Apurba Laha, Swaroop Ganguly, “Stability Enhancement of High Frequency DC Distribution Network by Incorporating Wide Bandgap β-Ga2O3 Power MOSFET as Switching Element”, IEEE PES/PELS EPEC, Edmonton, November 2020.
5. Suvendu Nayak, Saurabh Lodha, Swaroop Ganguly, “Effect of interface trap distribution on SiC-based power MOS device and circuit characteristics”, International Semiconductor Conference (CAS), Sinaia, October 2020.
6. Sudipta Mukherjee, Somnath Chakraborty, Deven Diwakar, Apurba Laha, Udayan Ganguly, Swaroop Ganguly, “Investigation of Structural Parameter Variation on Extended Gate TFET for Bio-Sensor Applications”, IEEE EECSI, Yogyakarta, October 2020.
7. Sudipta Mukherjee, Dipankar Saha, Apurba Laha, Swaroop Ganguly, “Enhancing Efficiency of PMA Standard Wireless Mobile Charging System in Automobiles by incorporating state-of-the-art Wide Bandgap Switch”, IEEE PES/IAS PowerAfrica, Nairobi, August 2020.
8. Narendra Rai, Ashutosh Mahajan, Dipankar Saha, Swaroop Ganguly, “Improved Lumped Element Model for GaN-based MIS-HEMT gate stack in the spill-over regime”, IEEE EDTM, Penang, April 2020.
9. Sudipta Mukherjee, Dipankar Saha, Apurba Laha, Swaroop Ganguly, “Variation of the Efficiency of GaN Junctionless FinFET based Boost Converter with Subthreshold Swing as a Unified Device Parameter”, IEEE EDTM, Penang, April 2020.
10. Sudipta Mukherjee, Souvik Dutta, Joydeep Ghosh, Apurba Laha, Dipankar Saha and Swaroop Ganguly, “Temperature Dependent Variability Analysis of Threshold Voltage and On-Current for Optimum Switching Performance by Gallium Nitride-based Junctionless FinFET”, IEEE EDTM, Singapore, March 2019.
11. Swetapadma Sahoo, Nidhi Pandey, Dipankar Saha and Swaroop Ganguly, “Atomistic analysis of receptor structure in quantum biomimetic olfactory sensor”, IEEE Sensors, New Delhi, September 2018.
12. Shankar Kesarwani, Ashutosh Mahajan and Swaroop Ganguly, “IETS in MIS contacts: towards a quantum biomimetic electronic nose”, IEEE Sensors, New Delhi, September 2018.
13. Swetapadma Sahoo, Nidhi Pandey, Dipankar Saha and Swaroop Ganguly, “Atomistic design of quantum biomimetic electronic nose”, SISPAD, Austin, September 2018.
14. Nidhi Pandey, Swetapadma Sahoo and Swaroop Ganguly, “Graph theoretic unification of Shape and Vibration theory of olfaction”, Quantum Effects in Biological Systems, Vilnius, July 2018.
15. Swetapadma Sahoo, Nidhi Pandey and Swaroop Ganguly, “Atomistic modeling of inelastic tunneling through odorant molecules”, Quantum Effects in Biological Systems, Vilnius, July 2018.
16. Joydeep Ghosh, Dmitry Osintsev, Viktor Sverdlov, and Swaroop Ganguly, “Multilevel Parallelization Approach to Estimate Spin Lifetime in Silicon: Performance Analysis”, IEEE EUROSOI-ULIS, Granada, March 2018.
17. T. G. Lakshmi, Soumya Narayana, H. Penugonda, D. Vaidya, V. Poonia, S. Ganguly, S. Murthy, “PIVOTeeING: A Flipped Approach in a Postgraduate Solid State Devices Course”, 25th International Conference on Computers in Education (ICCE), Christchurch, December 2017.
18. D. Vaidya, Saurabh Lodha and Swaroop Ganguly, “Comparison of basis sets for efficient ab-initio modeling of semiconductors”, SISPAD, Kamakura, September 2017.
19. S. Emekar, J. Jha, S. Mukherjee, M. Meer, K Takhar, D Saha, S Ganguly, “Modified Angelov model for an exploratory GaN-HEMT technology with short, few-fingered gates”, SISPAD, Kamakura, September 2017.
20. Yogendra K. Yadav, Bhanu B. Upadhyay, Mudassar Meer, Swaroop Ganguly, Dipankar Saha, “Improvement of Ohmic Contact by Surface Plasma Treatment on AlGaN/GaN Heterostructures”, 12th International Conference on Nitride Semiconductors, Strasbourg, July, 2017.
21. Sandeep Sankaranarayanan, Swaroop Ganguly, Dipankar Saha, “Estimation of strain relaxation in InGaN/GaN nanowires through excitonic binding energy”, 12th International Conference on Nitride Semiconductors, Strasbourg, July 2017.
22. Akanksha Rawat, Vivek K. Surana, Yogendra K. Yadav, Bhanu B. Upadhyay, Swaroop Ganguly, Dipankar Saha,“Improved Characteristics for Thermally Grown TiO2 and Al2O3 Based MOS-HEMTs”, 12th International Conference on Nitride Semiconductors, Strasbourg, July 2017.
23. P. Upadhyay, K. Takhar, Bhanu B. Upadhyay, Yogendra K. Yadav and D. Saha, “Improved p-type conduction in Gallium Nitride using Phosphorus Doping”, 12th International Conference on Nitride Semiconductors, Strasbourg, July 2017.
24. Kuldeep Takhar, Bhanu B. Upadhyay, Swaroop Ganguly and Dipankar Saha, “Post dielectric under gate N2-plasma for improved performance of wet grown Al2O3/AlGaN/GaN MISHEMTs”, 12th International Conference on Nitride Semiconductors, Strasbourg, July 2017.
25. Joydeep Ghosh, Apurba Laha, Dipankar Saha, and Swaroop Ganguly, “Modeling the Effect of the Two-Dimensional Hole Gas in a GaN/AlGaN/GaN Heterostructure”, IEEE Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Athens, April 2017.
26. Ashlesha Patil, Dipankar Saha and Swaroop Ganguly, “An Asymmetric Resonant Tunneling Diode as an Efficient Quantum Biomimetic Electronic Nose”, Quantum Effects in Biological Systems, Jerusalem, March 2017; BEST POSTER AWARD.
27. Vishvendra Poonia, Dipankar Saha and Swaroop Ganguly, “Emulating Photosynthetic Reaction Center Using Coupled Quantum Dots”, Quantum Effects in Biological Systems, Jerusalem, March 2017.
28. Kuldeep Takhar, Akhil Kumar S, Mudassar Meer, Bhanu B. Upadhyaya, Pankaj Upadhyay, Dolar Khachariya, Swaroop Ganguly and Dipankar Saha, “Non-Alloyed Ohmic Contacts to AlGaN/GaN High Electron Mobility Transistors for Better Scalability of Source Extension Region”, International Workshop on Nitride Semiconductors, Orlando, October 2016.
29. S. Sankaranarayanan, Swaroop Ganguly and Dipankar Saha, “Giant Peak to Valley Ratio in a GaN Based Tunnel Diode with Barrier Width Modulation”, International Workshop on Nitride Semiconductors, Orlando, October 2016.
30. Kuldeep Takhar, Mudassar Meer, Yogendra K. Yadav, Akhil Kumar, Pankaj Upadhyay, Bhanu B. Upadhyay, Swaroop Ganguly and Dipankar Saha, “Performance Improvement and Better Scalability of Wet-Oxide AlGaN/GaN High Electron Mobility Transistors”, International Workshop on Nitride Semiconductors, Orlando, October 2016.
31. A. Kumar S, S. Ganguly and D. Saha, “GaN Nanowire Transistors” in EMN Meeting on Nanowires, Amsterdam, May 2016.
32. Sundara Murthy Mopurisetty, Mohit Bajaj and Swaroop Ganguly, “TCAD Calibration for Cu2ZnSnS4 Solar Cell Simulation”, IEEE PVSC, June 2016.
33. P Harsha Vardhan, Sushant Mittal, A. S. Shekhawat, S. Ganguly and U.Ganguly, “Analytical modeling of Metal gate granularity induced Vt variability in NWFETs”, 74th Device Research Conference, Newark, June 2016.
34. Vishvendra Singh Poonia, Dipankar Saha and Swaroop Ganguly, “Quantum Biomimetic Modeling of Magnetic Field Sensing using Diamond NV- Centers”, IEEE NANO, Sendai, August 2016.
35. Ashlesha Patil, Dipankar Saha and Swaroop Ganguly, “Molecular Wire for Quantum Biomimetic Electronic Nose”, IEEE NANO, Sendai, August 2016.
36. P. Chaturvedi, B. Saha, D. Saha and S. Ganguly, “Role of laser energy density on growth of highly oriented topological insulator Bi2Se3 thin films”, AIP Conference Proceedings, 080056, 2016.
37. D. Banerjee, S. Chouksey, Pratim Bhattacharya, S. Sankaranarayanan, S. Ganguly, D. Saha, “Single-mode GaN Nanowire Laser”, EMN, Bangkok, November 2015.
38. D. Vaidya, A. Nainani, N. Yoshida, B. Wood, S. Lodha, S. Ganguly, “Integrated modeling platform for high-k/alternate channel material heterostructure stacks”, SISPAD, Washington DC, September 2015.
39. S. Kothari, C. Joishi, D. Vaidya, H. Nejad, B. Colombeau, S. Ganguly, S. Lodha,”Metal Gate VT Modulation Using PLAD N2 Implants for Ge P-FinFET Applications”, ESSDERC, Graz, September 2015.
40. G. S. Rao, Sundara Murthy Mopurisetty, R. Sharma, M.S. Islam, G. Srinivas, S. Ganguly, D. Gupta, “Incorporation of Ag NPs for performance enhancement of P3HT:PCBM solar cell with rGO: ZnO nano-composite as an electron transport layer”, ICMAT 2015, Singapore, June 2015.
41. Shraddha Kothari, Chandan Joishi, Dipankar Biswas, Dhirendra Vaidya, Swaroop Ganguly, Saurabh Lodha, “Enhanced Ge n-channel gate stack performance using HfAlO high-k dielectric”, Device Research Conference, Columbus, June 2015.
42. M.S.Murthy, Balakrishnan Ananthoju, Mohit Bajaj, M. Aslam, Swaroop Ganguly, “Broadband absorption enhancement in lower absorption coefficient region in CZTS solar cells with embedded aluminum nanoparticles into absorber layer”, IEEE PVSC, New Orleans, June 2015.
43. Balakrishnan Ananthoju, M.S.Murthy, Himanshu Tyagi, D. Bahadur, N.V. Medhekar, Swaroop Ganguly, M. Aslam, “Efficiency enhancement in Cu2ZnSnS4 solar cells with silica nanoparticles embedded in absorber layer”, IEEE PVSC, New Orleans, June 2015.
44. G. S. Rao, Sundara Murthy Mopurisetty, R. Sharma, M.S. Islam, G. Srinivas, S. Ganguly, D. Gupta, “Performance enhancement of P3HT:PCBM based organic solar cells with embedded gold nanoparticles”, IEEE PVSC, New Orleans, June 2015.
45. Vishvendra Poonia, Dipankar Saha, and Swaroop Ganguly, “Modeling of the Functional Window in the Avian Compass”, Quantum Effects in Biological Systems Workshop, Singapore, December 2014.
46. Biswajit Saha, Pragati Chaturvedi, Alok Shukla, Dipankar Saha and Swaroop Ganguly, “Sb2Te3 nanowires grown by a novel PLD technique”, MRS Fall Meeting, Boston, November 2014.
47. S. Mittal, S. Kurude, S. Dutta, P. Debashis, S. Ganguly, S. Lodha, A. Laha, U. Ganguly, “Epitaxial Rare Earth Oxide (EOx) FinFET: a variability-resistant Ge FinFET architecture with multi VT,” Device Research Conference, Santa Barbara, June 2014.
48. Yaksh Rawal, Debashree Burman, Prashanth P. Manik, Piyush Bhatt, Anoop C., Saurabh Lodha, Swaroop Ganguly, Maryam Shojaei Baghini, “Performance Comparison of MIM and MIS Diodes for Energy Harvesting Applications,” IEEE EDSSC, Chengdu, June 2014.
49. S. Sankaranarayan, S.Ganguly and D. Saha, “Effect of polarization on the performance of III-nitride Double Barrier Resonant Tunneling Diodes”, International Workshop on Nitride Semiconductors, Wroclaw, August 2014.
50. D. Banerjee, P. Upadhyay, M. Nadar, S.Ganguly and D. Saha, “Nanowire Formation on InGaN-based Quantum Well LED Hetero-structure by Wet Chemical Etching”, Interntional Workshop on Nitride Semiconductors, Wroclaw, August 2014.
51. D. Vaidya, S. Sant, A. Hegde, S. Lodha, U. Ganguly and S. Ganguly, “Modeling Charge Control in Heterostructure Nanoscale Transistors”, IWPSD, Delhi, Invited talk, December 2013.
52. Pragati Chaturvedi, Biswajit Saha, Alok Shukla, Dipankar Saha and Swaroop Ganguly, “Pulsed Laser Deposited Thin films of Topological Insulator Bi2Se3 for Device Applications”, IUMRS-ICA, Bangalore, December 2013.
53. Hardik Mehta, Saurabh Lodha and Swaroop Ganguly, “Calibration of the Density-Gradient TCAD Model for Germanium FinFETs”, IEEE-RSM, Langkawi, September 2013.
54. Oves Badami, Dipankar Saha and Swaroop Ganguly, “Efficient Wigner Function Simulation for Nanowire MOSFETs and Comparison to Quantum Drift-Diffusion”, SISPAD, Glasgow, September 2013.
55. M.S. Murthy, Mohit Bajaj, Ninad Sathaye, K.V.R.M. Murali and Swaroop Ganguly, “Combined Optical and Electrical Analysis of Efficiency Enhancement in Solar Cells with Embedded Dielectric Nanoparticles”, IEEE PVSC, Tampa, July 2013.
56. R. K. Mishra, U. Ganguly, S. Ganguly, S. Lodha, A. Nainani, M. Abraham, “Nickel germanide with rare earth interlayers for Ge CMOS applications”, EDSSC, Hong Kong, June 2013.
57. T.K. Agrawal, O. Badami, S. Ganguly, S. Mahapatra, and D. Saha, “Design Optimization of Gate-all-around Vertical Nanowire Transistors for Future Memory Applications”, IEEE EDSSC, Hong Kong, June 2013.
58. S. Sant, S. Lodha, U. Ganguly and S. Ganguly, “Novel nonlinear interpolation for Si1-xGex bandstructure parameters”, IEEE EDSSC, Bangkok, December 2012.
59. Oves Badami, Dipankar Saha, and Swaroop Ganguly, “Quantum Drift-Diffusion and Quantum Energy-Balance Simulation of Nanowire Transistors”, SISPAD, Denver, September 2012.
60. Sundara Murthy, Saurabh Tembhurne and Swaroop Ganguly, “Co-optimization of Plasmonic and Solar Cell Structures”, IEEE NANO 2012, Birmingham, July 2012.
61. Rama Adari, Debashree Banerjee, Swaroop Ganguly and Dipankar Saha, “Memory Elements using Multi-terminal Magnetoresistive Devices”, WUN-SPIN 2012, Sydney, July 2012.
62. Swaroop Ganguly, Tanmoy Pramanik, and Dipankar Saha, “Effect of Holes and Electric Fields on Spin Injection and Transport through Ferromagnet/Semiconductor Junction”, WUN-SPIN 2012, Sydney, Invited Talk, July 2012.
63. Oves Badami, Nikhil Kumar, Dipankar Saha, and Swaroop Ganguly, “Quantum Drift-Diffusion and Quantum Energy-Balance Simulation of Nanowire Junctionless Transistor”, Silicon Nanoelectronics Workshop, Honolulu, June 2012.
64. Debashree Banerjee, Swaroop Ganguly and Dipankar Saha, “Effect of Device Geometry on Output Circular Polarization in a Spin-LED”, International Magnetics Conference, Vancouver, May 2012.
65. Tarkeshwar Patil, Nakul Pande, Rama Bhadra Adari, Praveen Suggisetti, Neha Raorane, Swaroop Ganguly, Rabah W. Aldhaheri, Mohammad A. Hussain, and Dipankar Saha, “Cl2/Ar Based Dry Etching of GaCrN using Inductively Coupled Plasma”, AMEE International Workshop on Nanoelectronics and Optoelectronics, Hong Kong, January 2012.
66. Suresh Gundapaneni, Swaroop Ganguly and Anil Kottantharayil, “Effect of Quantum Confinement on the Performance of the Junctionless Transistor”, International Semiconductor Device Research Symposium, College Park, December 2011.
67. Anil Kottantharayil, Swaroop Ganguly and Suresh Gundapaneni, “Junctionless Field Effect Transistor: Challenges and Prospects in the Deca Nanometer Regime”, XVI International Workshop on the Physics of Semiconductor Devices, Kanpur, December 2011 (invited).
68. A. Kamath, T. Patil, I. Bhattacharya, R. Adari, S. Ganguly and D. Saha, “GaN High Electron Mobility Transistors”, XVI International Workshop on the Physics of Semiconductor Devices, Kanpur, December 2011 (invited).
69. T. Patil, N. Pande, R. Adari, P. Suggisetti, S. Subramanian, S. Ganguly and D. Saha, “Dry Etching of GaCrN using Inductively Coupled Cl2 /Ar Chemistry”, XVI International Workshop on the Physics of Semiconductor Devices, Kanpur, December 2011.
70. Praveen Suggisetti, Tarkeshwar Patil, Ramabhadra Rao Adari, Debashree Banerjee, Tanmoy Pramanik, Dipankar Saha and Swaroop Ganguly, “A homogeneous ferromagnetic semiconductor above room-temperature: Cr-doped GaN”, XVI International Workshop on the Physics of Semiconductor Devices, Kanpur, December 2011.
71. R. Adari, B. Sarkar, D. Banerjee, P. Suggisetti, T. Patil, S. Ganguly and D. Saha, “Electrical Characterization of Co/n-GaN Schottky Diodes” XVI International Workshop on the Physics of Semiconductor Devices, Kanpur, December 2011.
72. D. Banerjee, T. Pramanik, R. Adari, T. Patil, P. Suggisetti, S. Ganguly and D. Saha, “Effect of drift on spin polarization in a spin-LED”, 56th Annual Conference on Magnetism and Magnetic Materials, Scottsdale, November 2011.
73. P. Suggisetti, T. Patil, R. Adari, D. Banerjee, T. Pramanik, D. Saha and S. Ganguly, “Room-temperature ferromagnetism in homogeneous Cr-doped GaN”, 56th Annual Conference on Magnetism and Magnetic Materials, Scottsdale, November 2011.
74. R. Adari, B. Sarkar, T. Patil, D. Banerjee, P. Suggisetti, S. Ganguly, and D. Saha, “Temperature dependent characteristics of Fe/n-GaN Schottky diodes”, International Conference on Solid State Devices and Materials, Nagoya, September 2011.
75. R. Adari, M. Murthy, T. Patil, R. Maheshwari, G. Vaidya, S. Ganguly, and D. Saha, “Geometric Enhancement of Spin Injection and Detection in Semiconductors for High-Temperature Operation”, 55th Annual Conference on Magnetism and Magnetic Materials, Atlanta, November 2010.
76. D. Banerjee, R. Adari, M. Murthy, P. Suggisetti, S. Ganguly and D. Saha, “Modulation bandwidth of a spin laser”, 55th Annual Conference on Magnetism and Magnetic Materials, Atlanta, November 2010.
77. S. Ganguly, D. Saha et al., “Computational Nanoelectronics”, Workshop of High-Performance Computing, Bangalore, September 2010 (invited).
78. S. Ganguly, D. Saha et al., “Logic beyond CMOS – the promise of spintronics”, IUMRS-ICEM, Seoul, South Korea, August 2010 (invited)
79. R.B.R. Adari, M.S. Murthy, S. Ganguly and D. Saha, “Amplification of Optical Polarization in a Spin Laser”, 3rd International Conference on Spintronics Materials and Technology, Urbana, June 2010.
80. S. Ganguly, W. Van Roy, R. Lieten, R. Jansen, S. Kaushal and K. Sugishima, “Source/drain contact engineering for silicon/germanium spin transistors”, International Workshop on the Physics of Semiconductor Devices, New Delhi, December 2009.
81. S. Ganguly, “Voltage-controlled magnetization switching in ferromagnetic resonant tunneling diodes”, DAE Theme Meeting on Quantum Structures, Mumbai, November 2009 (invited).
82. S. Ganguly, W. Van Roy, R. Lieten, R. Jansen, S. Kaushal and K. Sugishima, “Engineering Optimal Spin Injection/Detection Contacts on Silicon and Germanium”, Nanotech Conference and Expo, Houston, May 2009.
83. W. Van Roy, P-J. Vandormael, P. Van Dorpe, R. Vanheertum, S. Ganguly, and G. Borghs, “Self-consistent Treatment of a Semiconductor between Magnetic Source and Drain”, Spintech IV, Maui, June 2007.
84. Swaroop Ganguly, L.F. Register, A.H. MacDonald, and S.K. Banerjee, “Scattering Dependence of Magnetization Switching in Ferromagnetic Resonant Tunneling Diodes”, European Materials Research Society Fall Meeting, Warsaw, September 2006.
85. Swaroop Ganguly, S. Banerjee, L.F. Register and A.H. MacDonald, “Bias Controlled Magnetization Switch in a Magnetic Semiconductor Resonant-tunneling Diode”, Nanoscale Devices and Systems Integration, Houston, April2005.
86. Hong-Jyh Li, Taras A. Kirichenko, Swaroop Ganguly, Puneet Kohli, Sanjay Banerjee, David Sing, Peter Zeitzoff, Kenneth Torres, Steve McCoy, Kiefer Elliot, “A Study of Ultra-high Ramp Rate Thermal Annealing”, ECS International Semiconductor Technology Conference, Shanghai, China, May 2001.
87. Hong-Jyh Li, Taras A. Kirichenko, Swaroop Ganguly, Puneet Kohli, Sanjay Banerjee, David Sing, Peter Zeitzoff, Kenneth Torres, Steve McCoy, Kiefer Elliot, “A Study of Rapid Thermal Annealing of Shallow BF2 Implants”, Ultra Shallow Junctions, Napa CA, April 2001.
88. Hong-Jyh Li, Puneet Kohli, Swaroop Ganguly, Taras A. Kirichenko, Peter Zeitzoff, Kenneth Torres, and S.Banerjee, “Boron Diffusion and Activation in the presence of other species”, International Conference on Computational Nanoscience and Nanotech., South Carolina, March 2001.
89. P.Kohli, S.Ganguly, T.Kirichenko, H-J.Li, S.K.Banerjee, E.Graetz, M.Shevelev, “Microwave Annealing of P/N Ultra Shallow Junctions”, USJ Workshop 2001.
90. Hong-Jyh Li, Puneet Kohli, Swaroop Ganguly, Taras A. Kirichenko, Peter Zeitzoff, Kenneth Torres, and S.Banerjee, “Boron Diffusion and Activation in the presence of other species”, IEDM Tech. Digest, 515, Dec 2000, San Francisco.
91. S.Banerjee, P.Kohli, H.Li, T.Kirichenko, and S.Ganguly, “High Ramp Rate Rapid Thermal Annealing for Ultrashallow Junctions”, Invited paper, Electrochem. Soc. Proc., Toronto, 2000.

1. Large Drive Current Enhancement with Channel Stress in Silicon Carbide Power MOSFETs (pending)
2. A Planar Junctionless Transistor (pending)
3. Suspended Gate Power MOSFET (pending)
4. Method and System for obtaining Inelastic Tunneling Spectra from Current-Voltage Characteristics (pending)
5. Light Emitting Diode Made of Indium-Gallium Nitride Based Nanowires & Method of Manufacture (pending).
6. Polarization Modulation in GaN Based Double Barrier Resonant Tunneling Diodes (pending).
7. GaN Based High Electron Mobility Transistor for Read/Write Memory with Gd Schottky Con­tact (pending).
8. GaN Based Schottky Diode for Read/Write Memory and the method of forming Gd Schottky Contact (pending).
9. Double-channel High Electron Mobility Transistor with Back-barrier.
10. US 7342244 (2008), WO 2008/111911, Spintronic Transistor.

• Shanthi Bhushan Boddepalli (now faculty at IIIT Kottayam, India)
• Ashutosh Mahajan (now faculty at Vellore Institute of Technology, Vellore, India)
• Joydeep Ghosh (now Research Scientist at the National University of Singapore)
• Kapil Sharma (now Senior Researcher, Joint Institute of Nuclear Research, Dubna, Russia)
• Biswajit Saha (now faculty at Institute of Engineering & Management, Kolkata, India)

• Sudipta Mukherjee, EE, 2022 (expected)
• Suvendu Nayak, EE, 2022 (expected)
• Narendra Rai, EE, 2022 (expected)
• Nidhi Pandey, EE, 2022 (expected)
• Shankar Kesarwani, EE, 2022 (expected)
• Binit Mallik, EE, 2022 (expected)
• Vandana Shishoo, EE, 2022 (expected)
• Vivek Surana, EE, 2022 (expected)
• Jaya Jha, EE, 2021
• Akanksha Rawat, EE, 2020 (co-advisor)
• Yogendra Yadav, EE, 2020 (co-advisor)
• Harshavardhan Penugonda, EE, 2019 (co-advisor; now at TSMC)
• Sandeep S, EE, 2018 (co-advisor)
• Dhirendra Vaidya, EE, 2018 (now at TSMC)
• Vishvendra Poonia, EE, 2018 (now at IIT Roorkee)
• Sandeep Sankaranarayan, EE 2018 (co-advisor; now at UIC)
• Pragati Chaturvedi, Physics, 2017 (co-advisor)
• Kuldeep Takhar, EE, 2017 (co-advisor; now at Globalfoundries)
• M. Sundara Murthy, EE, 2016
• Debashree Banerjee, EE (IITB-Monash), 2016 (co-advisor; now at CEERI)
• Ramabhadra Rao Adari, EE, 2014 (co-advisor; now at TSMC)
• Suresh Gundapaneni, EE, 2013 (co-advisor)

• Deepak Gaira, EE, 2021
• Ronak Kedia, EE, 2021
• Sumit Emekar, EE, 2016 (now at Qualcomm)
• Oves Badami, EE, 2013 (now at University of Glasgow)
• Abin Asaf, EE, 2013 (now at Cypress Semiconductor)
• Amit Gaur, EE, 2012 (co-advisor; now at ST-Ericsson)
• Tanmoy Pramanik, EE, 2012 (co-advisor; now Ph.D. student at University of Texas at Austin}
• Abhishek Kamath, EE, 2012 (co-advisor; now at Intel)
• Prashant Singhal, EE, 2012 (co-advisor; now at Sandisk)
• Naveen Neelapala, EE, 2012 (now at Micron Technology)
• Srihari Rao, EE, 2012 (now at Intel)
• Shanky Jain, EE, 2012 (now at Micron Technology)
• Debarsi Chakraborty, EE, 2011 (now at Intel)

• Ashutosh Samal, EE, 2021
• Shobhna Misra, EE, 2020 (Ph.D. student at ETH Zurich)
• Swetapadma Sahoo, EE, 2018 (Ph.D. student at UIUC)
• Ashlesha Patil, EE, 2017 (Ph.D. student at Univ. of Arizona)
• Shailendra Saraf, Energy Science & Engineering, 2014
• Sindhu Hari, EE, 2013 (now at Barclays)
• Hardik Mehta, EE, 2013 (now at A.T. Kearney)
• Saurabh Tembhurne, EE, 2013 (now Ph.D. student at EPFL Lausanne)
• Arjuna Hegde, Physics, 2012 (now at KLA Tencor)
• Nikhil Kumar, EE, 2012

• Spring 2010 – EE 214 (Digital Circuits Lab), EE 672 (Microelectronics Lab)
• Autumn 2010 – EE 723 (Physics of Nanoscale Devices I)
• Spring 2011 – EE 727 (Physics of Nanoscale Devices II)
• Autumn 2011 – EE 723 (Physics of Nanoscale Devices I)
• Spring 2012 – EE 727 (Physics of Nanoscale Devices II
• Autumn 2012 – EE 207 (Electronic Devices)
• Spring 2013 – EE 672 (Microelectronics Lab)
• Autumn 2013 – EE 207 (Electronic Devices), EE 236 (Electronic Devices Lab)
• Autumn 2014 – EE 207 (Electronic Devices), EE 236 (Electronic Devices Lab)
• Spring 2015 – EE 214 (Digital Circuits Lab)
• Autumn 2015 – EE 733 (Solid State Devices)
• Spring 2016 - EE 672 (Microelectronics Lab)
• Autumn 2016 - EE 733 (Solid State Devices)
• Spring 2017 - EE 727 (Physics of Nanoscale Devices - II)
• Autumn 2017 - EE 301 (Electromagnetic Waves)
• Spring 2018 - EE 672 (Microelectronics Lab)
• Autumn 2019 - EE 735 (Microelectronics Simulation Lab)
• Spring 2020 - EE 207 (Electronic Devices)
• Summer 2020 - EE 207 (Electronic Devices)
• Autumn 2020 - EE 207 (Electronic Devices)