Institute Chair Professor, Electrical Engineering, IIT Bombay
Professor-in-charge, IIT-OSU Frontier Research Center
Senior Member, IEEE
Fellow, INAE
606, Nanoelectronics Building, 6th Floor
Department of Electrical Engineering
IIT Bombay, Powai
Mumbai 400 076, India
Email : slodha[AT]ee.iitb.ac.in
Phone (Office): +91-22-25767460
Fax: +91 22 2572 3707
Group Web Site
Google Scholar Profile
Google Scholar Profile (h-index: 33, i-index: 64)
As PI
As Co-PI
86. R. Lengare, C. Joishi, S. Lodha, “Electrostatic Engineering of β-Ga2O3 Trench Metal-Insulator-Semiconductor Schottky Barrier Diodes Using a Bilayer Dielectric Stack”, to appear in IEEE Transactions of Electron Devices, 2022.
85. H. Jawa, A. Varghese, S. Ghosh, S. Sahoo, Y. Yin, N. Medhekar, S. Lodha, “Wavelength-Controlled Photocurrent Polarity Switching in BP-MoS2 Heterostructure”, Advanced Functional Materials, 2112696, 2022.
84. A. Varghese, Y. Yin, M. Wang, S. Lodha, and N. V. Medhekar, “Near-Infrared and Visible-range Optoelectronics in 2D Hybrid Perovskite/Transition Metal Dichalcogenide Heterostructures”, Advanced Materials Interfaces, 14, 2102174, 2022.
83. S. Ghosh, A. Varghese, H. Jawa, Y. Yin, N. V. Medhekar, and S. Lodha, “Polarity-Tunable Photocurrent through Band Alignment Engineering in a High-Speed WSe2/SnSe2 Diode with Large Negative Responsivity”, ACS Nano, 16, 3, 4578–4587, 2022.
82. P Tiwari, J, Biswas, C. Joishi, S. Lodha, “Nb2O5 high-k dielectric enabled electric field engineering of β-Ga2O3 metal-insulator-semiconductor (MIS) diode” Journal of Applied Physics, 130 (24), 245701, 2021.
81. K. Thakar and S. Lodha, “Multi-Bit Analog Transmission Enabled by Electrostatically Reconfigurable Ambipolar and Anti-Ambipolar Transport”, ACS Nano, 15 (12), 19692-19701, 2021.
80. D. Saha and S. Lodha, “First-principles based simulations of electronic transmission in ReS2/WSe2 and ReS2/MoSe2 type-II vdW heterointerfaces”, Scientific Reports, 11 (1), 1-10, 2021.
79. S. Nayak, S, Lodha, S. Ganguly, “Stress Engineering for Drive Current Enhancement in Silicon Carbide (SiC) Power MOSFETs”, IEEE Journal of the Electron Devices Society 9, 876-880, 2021.
78. S. Dhara, H. Jawa, S. Ghosh, A. Varghese, D. Karmakar, S. Lodha, “All-electrical high sensitivity-low power dual mode gas sensing and recovery with a WSe2/MoS2 pn heterodiode”, ACS Applied Materials and Interfaces, 13 (26), 30785-30796, 2021.
77. S. Ghosh, A. Varghese, K. Thakar, S. Dhara, S. Lodha, “Enhanced responsivity and detectivity of fast WSe2 phototransistor using electrostatically tunable in-plane lateral p-n homojunction”, Nature Communications, 12 (1), 1-9, 2021.
76. S. Nayak, B. SanthiBhushan, S. Lodha, S. Ganguly, “Silicon carbide planar junctionless transistor for low-medium voltage power electronics“, Journal of Physics Communications 5 (2), 025009, 2021.
75. H. Jawa, A. Varghese, S. Lodha, “Electrically Tunable Room Temperature Hysteresis Crossover in Underlap MoS2 FETs”, ACS Applied Materials and Interfaces, 13, 7, 9186–9194, 2021.
74. A. Tyagi, J. Biswas, A. Kottantharayil, K. Ghosh, S. Lodha, “Performance Analysis of Silicon Carrier Selective Contact Solar Cells with ALD MoOx as Hole Selective Layer”, Silicon, 1-8, 2021.
73. J. Biswas, G. Bajaj, A. Tyagi, P. Goradia, S. Lodha, “Tunable optical and electrical properties of thermal and plasma-enhanced atomic layer deposited Si-rich SixTi1-xO2 thin films”, Journal of Applied Physics, 129 (5), 055303, 2021.
72. D. Biswas, C. Joishi, J. Biswas, P. Tiwari, S. Lodha, “Charge trap layer enabled positive tunable Vfb in β-Ga2O3 gate stacks for enhancement mode transistors”, Applied Physics Letters, 117, 172101, 2020. Link
71. C Joishi, Z Xia, JS Jamison, SH Sohel, RC Myers, S Lodha, S Rajan, “Deep-Recessed β-Ga2O3 Delta-Doped Field-Effect Transistors With itIn Situ Epitaxial Passivation”, IEEE Transactions on Electron Devices, 67, 11, 4813-4819, 2020. Link
70. A. Varghese, D. Saha, K. Thakar, V. Jindal, S. Ghosh, N. Medhekar, S. Ghosh, S. Lodha, “Near-direct bandgap WSe2/ReS2 type-II pn heterojunction for enhanced ultrafast photodetection and high-performance photovoltaics”, Nano Letters, 20, 3, 1707-1717, 2020. Link
69. P. Kumar, K. Thakar, N. C. Verma, J. Biswas, T. Maeda, A. Roy, K. Kaneko, C. K. Nandi, S. Lodha, V. Balakrishnan, “Polymorphic In-Plane Heterostructures of Monolayer WS2 for Light-Triggered Field Effect Transistors”, to appear in ACS Applied Nano Materials, 2020.
68. S. Dev, K. Khiangte, S. Lodha, “Wafer-scale mono-crystalline GeSn alloy on Ge by sputtering and solid phase epitaxy”, Journal of Physics D, 53, 21, 2020. Link
67. N. Goyal, D. MA Mackenzie, V. Panchal, H. Jawa, O. Kazakova, D. H. Petersen, S. Lodha, “Enhanced thermally aided memory performance using few-layer ReS2 transistors”, Applied Physics Letters, 116 (5), 052104, 2020. Link
66. K. Thakar and S. Lodha, “Optoelectronic and Photonic Devices based on Transition Metal Dichalcogenides”, invited review article in Materials Research Express, 7 (1), 014002, 2020. Link
65. S. Dev, N. Pradhan, N. Variam and S. Lodha, “Impact of N2 Co-implant on Phosphorus Diffusion and Activation for n+/p Ge Junctions”, IEEE Transactions on Electron Devices, 67 (2), 419-423, 2020. Link
64. D. Saha, A. Varghese and S. Lodha, ” Atomistic Modeling of van der Waals Heterostructures with Group-6 and Group-7 Monolayer Transition Metal Dichalcogenides for Near Infrared/Short-wave Infrared Photodetection” ACS Applied Nano Materials, 3 (1), 820-829, 2019. Link
63. J. F. McGlone, Z. Xia, C. Joishi, S. Lodha, S. Rajan, S. A. Ringel, and A. R. Arehart, “Identification of Critical Buffer Traps in Si Delta-doped β-Ga2O3 MESFETs”, Applied Physics Letters, 115 (15), 153501, 2019. Link
62. N. Goyal, S. Mahapatra and S. Lodha, “ Ultra-fast Characterization of Hole Trapping Near Black Phosphorus (BP)/SiO2 Interface During NBTI Stress in 2D BP p-FETs,” (Invited paper) IEEE Transactions on Electron Devices, 66 (11), 4572-4577, 2019. Link
61. K. Deka, A. Guleria, D. Kumar, J. Biswas, S. Lodha, S. D. Kaushik, S. Dasgupta, P. Deb, “Exclusive T2 MRI contrast enhancement by mesoporous carbon framework encapsulated manganese oxide nanoparticles”, Current Applied Physics 20 (1), 89-95, 2019. Link
60. S. Dev and S. Lodha, “Process Variation-Induced Contact Resistivity Variability in Nanoscale MS and MIS Contacts”, IEEE Transactions on Electron Devices, vol. 66, no. 10, 4320 - 4325, 2019. Link
59. P. Kumar, J. Biswas, J. Pandey, K. Thakar, A. Soni, S. Lodha and V. Balakrishnan“Selective oxidation of WS2 defect domain with sub monolayer thickness leads to multi-fold enhancement in Photoluminescence” Advanced Material Interfaces, 1900962, 2019. Link
58. N. Goyal, N. Parihar, H. Jawa, S. Mahapatra, S. Lodha “Accurate Threshold Voltage Reliability Evaluation of Thin Al2O3 Top Gate Dielectric Black Phosphorous FETs Using Ultrafast Measurement Pulses”, ACS Applied Materials and Interfaces, 11, 26, 23673-23680, 2019. Link
57. C. Joishi, Y. Zhang, Z. Xia, W. Sun, A. R. Arehart, S. Ringel, S. Lodha, and S. Rajan, “Breakdown characteristics of β-(Al0.22Ga0.78)2O3/Ga2O3 field-plated modulation doped field effect transistors with SiNx passivation”, IEEE Electron Device Letters, 40 (8), 1241-1244, 2019. Link
56. Z. Xia, H. Xuu, C. Joishi, J. McGlone, N. K. Kalarickal, S. H. Sohel, M. Brenner, S. Ringel, S. Lodha, W. Lu, S. Rajan, “β-Ga2O3 Delta-Doped Field Effect Transistors with Current Gain Cutoff Frequency of 27 GHz”, IEEE Electron Device Letters, 40 (7), 1052-1055, 2019. Link
55. D. Biswas, C. Joishi, J. Biswas, K. Thakar, S. Rajan and S. Lodha, “Enhanced n-type β-Ga2O3 (201) gate stack performance using Al2O3/SiO2 bi-layer dielectric”, Applied Physics Letters, 114, 212106, 2019. Link
54. J. Biswas, N. Pradhan, D. Biswas, S. Das, S. Mahapatra, S. Lodha, “Impact of punch-through stop implants on channel doping and junction leakage for Ge p-FinFET applications”, IEEE Transactions on Electron Devices, 66 (4), 1635-1641, 2019. Link
53. A. Tyagi, K. Ghosh, A. Kottantharayil, S. Lodha, “An Analytical Model for the Electrical Characteristics of Passivated Carrier-Selective Contact Solar Cell”, IEEE Transactions on Electron Devices, 66 (3), 1377-1385, 2019. Link
52. K. Deka, A. Guleria, D. Kumar, J. Biswas, S. Lodha, S. Kaushik, S. Choudhary, S. Dasgupta and P. Deb, “Janus Nanoparticles for Contrast Enhancement of T1-T2 Dual Mode Magnetic Resonance Imaging”, Dalton Transactions, 48 (3), 1075-1083, 2019. Link
51. K. Thakar, B. Mukherjee, S. Grover, N. Kaushik, M. Deshmukh, S. Lodha, ““Multilayer ReS2 Photodetectors with Gate Tunability for High Responsivity and High Speed Applications”, ACS Applied Materials and Interfaces, 10, 42, 36512 (2018). Link
50. K. Saikia, K. Bhattacharya, D. Sen, S. D. Kaushik, J. Biswas, S. Lodha, B. Gogoi, A. K. Buragohain, W. Kockenberger, P. Deb, “Solvent evaporation driven entrapment of magnetic nanoparticles in mesoporous frame for designing a highly efficient MRI contrast probe”, Applied Surface Science, 464, 567-576 (2018). Link
49. C. Joishi, Z. Xia, J. MacGlone, Y. Zhang, A. R. Arehart, S. Ringel, S. Lodha, S. Rajan, “Effect of Buffer Iron Doping on Delta-Doped β-Ga2O3 Metal Semiconductor Field Effect Transistors”, Applied Physics Letters, 113, 123501 (2018). Link
48. C. Joishi, S. Ghosh, S. Kothari, N. Parihar, S. Mukhopadhyay, S. Mahapatra, S. Lodha, “Understanding PBTI in replacement metal gate Ge n-channel FETs with ultrathin Al2O3 and GeOx ILs using ultrafast charge trap-detrap techniques”, IEEE Transactions on Electron Devices, 65 (10), 4245-4253 (2018). Link
47. D. Vaidya, S. Lodha, S. Ganguly, “Electrical-equivalent van der Waals gap for two-dimensional bilayers”, to appear in Physical Review Applied, (2018).
46. S. Singh, K. Thakar, N. Kaushik, B. Muralidharan, S. Lodha, “Performance Projections for Two-dimensional Materials in Radio-Frequency Applications” Physical Review Applied, 10 (1), 014022, (2018). Link
45. N. Kaushik, S. Ghosh and S. Lodha, “Low-Frequency Noise in Supported and Suspended MoS2 Transistors”, IEEE Transactions on Electron Devices, 65 (10), 4135-4140 (2018). Link
44. S. Dev, M. Meena, Harshvardhan, S. Lodha, “Statistical Simulation Study of Metal Grain Orientation Induced MS and MIS Contact Resistivity Variability for 7 nm FinFETs”, IEEE Transactions on Electron Devices, 65 (8), 3104-3111 (2018).Link
43. Y. Zhang, C. Joishi, Z. Xia, M. Brenner, S. Lodha, S. Rajan, “Demonstration of β-(AlxGa1-x)2O3/Ga2O3 Double Heterostructure Field Effect Transistors”, Applied Physics Letters, 112 (23), 233503 (2018). Link
42. J. McGlone, Z. Xia, Y. Zhang, C. Joishi, S. Lodha, S. Rajan, S. Ringel, A. Arehart, “Trapping effects in Si δ-doped β-Ga2O3 MESFETs on an Fe-doped β-Ga2O3 substrate” IEEE Electron Device Letters, 39 (7), 1042-1045 (2018). Link
41. N. Goyal, N. Kaushik, H. Jawa, and S. Lodha, “Enhanced Stability and Performance of Few-Layer Black Phosphorus Transistors by Electron Beam Irradiation”, Nanoscale, vol. 10, issue 24, pp. 11616-11623 (2018). Link
40. S. Kothari, D. Vaidya, H. Nejad, N. Variam, S. Ganguly, and S. Lodha, “Plasma-assisted As Implants For Effective Work Function Modulation of TiN/HfO2 Gate Stacks on Germanium”, Applied Physics Letters, 112 (20), 203503 (2018). Link
39. Z. Xia, C. Joishi, S. Krishnamoorthy, S.Bajaj, Y. Zhang, M. Brenner, S. Lodha, S. Rajan. “Delta doped β-Ga2O3Field Effect Transistors with Regrown Ohmic Contacts”, IEEE Electron Device Letters, vol. 39, issue 4, pp. 568 - 571 (2018). Link
38. C. Joishi, S. Rafique, Z. Xia, L. Han, S. Krishnamoorthy, Y. Zhang, S. Lodha, H. Zhao, S. Rajan, “LPCVD grown β-Ga2O3 Bevel Field-plated Schottky Barrier Diodes”, Applied Physics Express, vol. 11, no. 3 (2018). Link
37. P. Kumar, N. Verma, N. Goyal, J. Biswas, S. Lodha, C. Nandi, V. Balakrishnan, “Phase engineering of seamless heterophase homojunctions with co-existing 3R and 2H phases in WS2 monolayers”, Nanoscale, 10, pp. 3320-3330 (2018). Link
36. K. Deka, A. Guleria, D. Kumar, J. Biswas, S. Lodha, S. D. Kaushik, S. Dasgupta, P. Deb, “Mesoporous 3D Carbon Framework Encapsulated Manganese Oxide Nanoparticles as Biocompatible T 1 MR Imaging Probe”, Colloids and Surfaces A: Physicochemical and Engineering Aspects, Vol. 539, pp. 229–236 (2018). Link
35. A. Tyagi, K. Ghosh, A. Kottantharayil, S. Lodha, “Performance Evaluation of Passivated Silicon Carrier Selective Contact Solar Cell”, IEEE Transactions on Electron Devices, Vol. 65, 1 (2018). Link
34. N. Kaushik, D. Mackenzie, K. Thakar, N. Goyal, B. Mukherjee, P. Boggild, D. H. Petersen, and S. Lodha, “Reversible Hysteresis Inversion in MoS2 Field Effect Transistors”, Nature 2D Materials and Applications, 1 (1), 34 (2017). Link
33. S. Krishnamoorthy, Z. Xia, C. Joishi, Y. Zhang, J. McGlone, J. Johnson, M. Brenner, A. Arehart, J. Hwang, S. Lodha, S. Rajan, “Modulation-doped β-(Al0.2Ga0.8)2O3/ Ga2O3 Field-Effect Transistor”, Appl. Phys. Lett., 111, 023502 (2017). Link
32. D. Vaidya, S. Lodha and S. Ganguly, “Ab-initio Study of NiGe/Ge Schottky Contact”, Journal of Applied Physics 121 (14), 145701 (2017). Link
31. D. Biswas, J. Biswas, S. Ghosh, B. Wood, and S. Lodha, “Enhanced thermal stability of Ti/TiO2/n-Ge contacts through plasma nitridation of TiO2 interfacial layer”, Applied Physics Letters, 110, 052104 (2017). Link
30. B. Mukherjee, N. Kaushik, R. P. N. Tripathi, A. M. Joseph, P. K. Mohapatra, S. Dhar, B. P. Singh, G. V. Pavan Kumar, E. Simsek, and S. Lodha, “Exciton Emission Intensity Modulation of Monolayer MoS2 via Au Plasmon Coupling” Scientific Reports, 7, 41175 (2017). Link
29. S. Karande, N. Kaushik, D. Narang, D. Late, and S. Lodha, “Thickness Tunable Transport in Alloyed WSSe Field Effect Transistors”, Applied Physics Letters, 109, 142101 (2016) Link
28. S. Ghosh, P. Bhatt, Y. Tiwari, C. Joishi, and S. Lodha, “Temperature and Field Dependent Low Frequency Noise Characterization of Ge n-FETs”, Journal of Applied Physics, 120, 095703 (2016). Link
27. S. Kothari, C. Joishi, H. Nejad, N. Variam, and S. Lodha, “Plasma-assisted low energy N2 implant for Vfb tuning of Ge gate stacks”, Applied Physics Letters, 109 (7), 072105. Link
26. S. Kothari, C. Joishi, D. Biswas, D. Vaidya, S. Ganguly, and S. Lodha, “Improved n-channel Ge gate stack performance using HfAlO high-k dielectric for varying Al concentration”, Applied Physics Express, 9 (7), 071302 (2016). Link
25. S. Dev, N. Remesh, Y. Rawal, P. P. Manik, B. Wood, and S. Lodha, “Low resistivity contact on n-type Ge using low work-function Yb with a thin TiO2 interfacial layer”, Applied Physics Letters, 108 (10), 103507 (2016). Link
24. A. Nipane, D. Karmakar, S. Karande, N. Kaushik and S. Lodha, “Few Layer MoS2 p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation”, ACS Nano, 10 (2), pp. 2128–2137 (2016). Link
23. N. Kaushik, D. Karmakar, A. Nipane, S. Karande, and S. Lodha, “Interfacial n-Doping using an Ultra-Thin TiO2 Layer for Contact Resistance Reduction in MoS2”, ACS Applied Materials and Interfaces, 8 (1), pp 256–263 (2016). Link
22. P. Paramahans Manik, and S. Lodha, “Contacts on n-type Germanium using variably doped ZnO and highly doped ITO interfacial layers”, Applied Physics Express, vol. 8, no. 5, 051302 (2015). Link
21. P. Bhatt, P. Swarnkar, A. Misra, J. Biswas, C. Hatem, A. Nainani, and S. Lodha, “Enhanced Ge n+/p Junction Performance Using Cryogenic Phosphorous Implantation”, IEEE Transactions on Electron Devices 62 (1),69 (2015). Link
20. A. Ray, R. Nori, P. Bhatt, S. Lodha, R. Pinto, V. R. Rao, F. Jomard, M. Neumann-Spallart, “Optimization of a plasma immersion ion implantation process for shallow junctions in silicon”, Journal of Vacuum Science & Technology A 32 (6), 061302 (2014). Link
19. S. Mukherjee, R. Singh, S. Gopinathan, S. Murugan, S. Gawali, B. Saha, J. Biswas, S. Lodha, A. Kumar,”Solution Processed Poly(3,4-ethylenedioxythiophene) thin films as transparent Conductor: Effect of p-Toluenesulphonic Acid in Dimethyl Sulfoxide“, ACS Applied Materials & Interfaces, 6 (20), 17792–17803 (2014). Link
18. N. Kaushik, A. Nipane, F. Basheer, S. Dubey, S. Grover, M. Deshmukh, S. Lodha, “Schottky Barrier Heights for Au and Pd Contacts to MoS2”, Applied Physics Letters, 105, 113505 (2014). Link
17. P. Bhatt, P. Swarnkar, F. Basheer, C. Hatem, A. Nainani, S. Lodha, “High Performance 400 ºC p+/n Ge Junctions Using Cryogenic Boron Implantation”, IEEE Electron Device Letters, 35 (7), 717-719 (2014). Link
16. S. Mittal, S. Gupta, A. Nainani, M.C. Abraham, K. Schuegraf, S. Lodha, and U. Ganguly “Epitaxially Defined (ED) FinFET: Variability Resistant and High Performance Technology”, IEEE Transactions on Electron Devices, 61 (8), 2711 - 2718 (2014). Link
15. P. Bhatt, K. Chaudhuri, S. Kothari, A. Nainani, S. Lodha, “Germanium oxynitride gate interlayer dielectric formed on Ge(100) using decoupled plasma nitridation”, Applied Physics Letters, 103, 172107 (2013). Link
14. R. Mandapati, A. Borkar, V. S. S. Srinivasan, P. Bafna, P. Karkare, S. Lodha, B. Rajendran, and U. Ganguly, “On Pairing of Bipolar RRAM Memory with NPN Selector based on Set/Reset Array Power Considerations”, IEEE Transactions in Nanotechnology, 12, no. 6 , 1178-1184 (2013).Link
13. R. Mandapati, A. Borkar, V. S. S. Srinivasan, P. Bafna, P. Karkare,S. Lodha, U. Ganguly, “The Impact of n-p-n Selector-Based Bipolar RRAM Cross-Point on Array Performance”, IEEE Transactions on Electron Devices, vol. 60, no. 10, 3385-3392 (2013). Link
12. S. Gupta, P. Paramahans Manik, R. K. Mishra, A. Nainani, M. C. Abraham, S. Lodha, “Contact resistivity reduction through interfacial layer doping in metal-interfacial layer-semiconductor contacts”, Journal of Applied Physics, 113, 234505 (2013). Link
11. S. Sant, S. Lodha, U. Ganguly, S. Mahapatra, S. Ganguly, V. Moroz, L. Smith, and F. Heinz, “Calculations of band gap bowing and band offsets in relaxed and strained Si1−xGex alloys by employing a new nonlinear interpolation scheme,” Journal of Applied Physics, 113, 033708 (2013). Link
10. P. Paramahans, R. K. Mishra, V. Pavan Kishore, P. Ray, A. Nainani, Y-C. Huang, M. C. Abraham, U. Ganguly, and S. Lodha, “Fermi-level unpinning and low resistivity in contacts to n-type Ge with a thin ZnO interfacial layer”, Applied Physics Letters, 101, 182105 (2012). Link
9. V. S. Srinivasan, S. Chopra, P. Karkare, P. Bafna, S. Lashkare, P. Kumbhare, Y. Kim, S. Srinivasan, S. Kuppurao, S. Lodha, U Ganguly, “Punch-through Diode based Bipolar RRAM Selector by Si Epitaxy”, IEEE Electron Devices Letters, 33, 1396 (2012). Link
8. V. Pavan Kishore, P. Paramahans, S. Sadana, U. Ganguly, and S. Lodha, “Nanocrystal-based Ohmic contacts on n and p-type germanium”, Applied Physics Letters, 100, 142107 (2012). Link
7. P. D. Carpenter, S. Lodha, D. B. Janes, A. V. Walker, “Characterization of gold contacts in GaAs-based molecular devices: Relating structure to electrical properties”, Chemical Physics Letters, 472, 220 (2009).
6. S. Lodha and D. B. Janes, “Metal/Molecule/P-type GaAs Heterostructure Devices,” Journal of Applied Physics, 100, 024503 (2006).
5. S. Lodha, P. Carpenter and D. B. Janes, “Effect of Contact Properties on Current Transport in Metal/Molecule/GaAs Devices,” Journal of Applied Physics, 99, 024510 (2006).
4. S. Ghosh, H. Halimun, A. Mahapatro, J. Choi, S. Lodha and David Janes, “Device structure for electronic transport through individual molecules using nanoelectrodes,” Applied Physics Letters, 87, 233509 (2005).
3. S. Lodha and David B. Janes, “Enhanced current densities in Au/molecule/GaAs devices,” Applied Physics Letters, 85, 2809 (2004).
2. S. Lodha, David B. Janes and Nien-Po Chen, “Unpinned interface Fermi level in Schottky contacts to n-GaAs capped with low-temperature-grown GaAs; experiments and modeling using defect state distributions,” Journal of Applied Physics, 93, 2772 (2003).
1. S. Lodha, David B. Janes and Nien-Po Chen, “Fermi level unpinning in ex-situ Schottky contacts on n-GaAs capped with low-temperature-grown GaAs,” Applied Physics Letters, 80, 4452 (2002).