Institute Chair Professor, Electrical Engineering, IIT Bombay
Professor-in-charge, IIT-OSU Frontier Research Center
Senior Member, IEEE
Fellow, INAE

606, Nanoelectronics Building, 6th Floor
Department of Electrical Engineering
IIT Bombay, Powai
Mumbai 400 076, India
Email : slodha[AT]ee.iitb.ac.in
Phone (Office): +91-22-25767460
Fax: +91 22 2572 3707

Group Web Site

Google Scholar Profile

• Ph.D. Electrical Engineering, Purdue University, 2004
• M.S. Electrical and Computer Engineering, Purdue University, 2001
• B. Tech. Electrical Engineering, Indian Institute of Technology Bombay, 1999

• Dec 2018 - present: Professor at Department of Electrical Engineering, IIT Bombay
• Oct 2020 - Aug 2021: Visiting Professor at TU Delft, Netherlands
• Oct 2020 - Aug 2021: Visiting Professor at TU Eindhoven, Netherlands
• Sep 2014 - Nov 2018: Associate Professor at Department of Electrical Engineering, IIT Bombay
• Jul 2010 - Aug 2014: Assistant Professor at Department of Electrical Engineering, IIT Bombay
• Apr 2010 - Jul 2010: Staff Engineer (14nm and 22nm process integration) at PTD (Portland Tech. Dev.), Intel Corporation.
• Apr 2005 - Mar 2010: Senior Process Integration Engineer (32nm and 45nm technologies) at PTD (Portland Tech. Dev.), Intel Corporation.

• EE 101: Introduction to Electrical and Electronic Circuits (Under Graduate)
• EE 224: Digital Systems (Under Graduate)
• EE 227: Introduction to Microelectronics (Under Graduate)
• EE 733: Solid State Devices (Post Graduate)
• EE 207M: Electronic Devices and Circuits (Under Graduate Minor)
• EE 207: Electronic Devices and Circuits

• EE 214: Digital Systems Lab (Under Graduate)
• EE 318: Electronic Design Lab (Under Graduate)
• EE 672: Microelectronics Fabrication Lab (Post Graduate)
• EE 236: Electronic Devices Laboratory (Under Graduate)

Google Scholar Profile (h-index: 33, i-index: 69)

• 2D materials and devices
• Wide bandgap power devices
• CMOS process integration and device physics
• Metal-semiconductor interfaces
• Molecular devices

• Emergent phenomena in 2D heterostructures, DST Nano Mission, 2023-2028, IITB PI
• Wafer-scale and area-selective ALD of 2D semiconductors and high-k dielectrics for advanced semiconductor technologies, DST-SERB, 2023-2025, PI
• Indian Nanoelectronics Users’ Program – Idea to Innovation, MeitY, 2021-2024, PI
• Nanoelectronics Network for Research and Applications (NNeTRA), 2018-2024, PI

As PI

• High speed 2D electronic and optoelectronic devices, DST Swarnajayanti Fellowship, 2018-2023
• Vapor Phased Deposition of SAMs for Area-Selective ALD, Applied Materials, 2021-2022
• Agricultural and environmental 2D gas sensors, NWO Netherlands, 2020-2021
• Fast ALD for Thick Dielectrics, Applied Materials, 2019-2021
• Indian Nanoelectronics Users’ Program (Phase II), MeitY, 2014-2019
• ALD Process Development for Carbon and Low-K Dielectrics, Applied Materials, 2018-2019
• Silicon Solar Cells with Carrier Selective Contacts, DST, 2016-2019
• Si/SiGe/Ge Vertical Gate All Around Transistor Pathfinding Project, Applied Materials, 2013-2018
• ALE hardware and process devpt., Applied Materials, 2016-2018
• Electron transport in advanced semiconductor materials, Danish Agency for Science, Technology and Innovation, 2015-2016
• Ge-based device development for sub-22nm node CMOS logic, DST, 2011-2014, PI (rated Excellent by DST)
• Ge Transistor Pathfinding Project, Applied Materials, 2011-2012

As Co-PI

• IIT Bombay Research Park, MHRD, 2014-2017
• Dielectrics & their integration into Nanoscale logic and memory devices, DST, 2012-2016
• Monolithic Integration of High Performance Germanium based Infrared Detector on Silicon, DST, 2013-2016
• Inkjet Printed Flexible Thin TFTs, DST, 2013-2016
• Nanoscale Selection Device Dev for sub-20nm node High-Density Embedded Non-Volatile Memory, DST, 2011-2014
• Material screening for memory and logic applications, Applied Materials, 2013-2014
• Modelling and simulation of Germanium-based devices, Synopsys Inc., 2011-2013
• Centre of Excellence in Nano-electronics (Phase II), DeitY, 2011-2016, Investigator

• Prof. Bipin Rajendran, King's College, London
• Prof. Siddharth Rajan, Ohio State University
• Dr. Dirch Hjorth Petersen, Technical University of Denmark (DTU), Copenhagen
• Prof. Mandar Deshmukh TIFR, Mumbai
• Prof. Viswanath Balakrishnan, IIT Mandi
• Prof. Debjani Karmakar BARC, Mumbai
• Prof. Dattatray Late NCL, Pune

94. P. Sharma and S. Lodha, “β-Ga₂O₃ Schottky Barrier Height Improvement Using Ar/O2 Plasma and HF Surface Treatments”, to appear in Applied Physics Letters, 2024.

93. K. Konwar, S. D. Kaushik, P. D. Babu, A. Chaturvedi, D. Kumar, R. Chakraborty, R. Mukhopadhyay, P. Sharma, S. Lodha, D. Sen, P. Deb, “Integrative Modulation of Magnetic Resonance Transverse and Longitudinal Relaxivity in a Cell-Viable Bimagnetic Ensemble, γ-Fe2O3@ZnFe2O4”, Langmuir, 40, 3, 1793–1803, 2024.

92. A. Anand, M. K. Sahoo, F. Mujeeb, A. Varghese, S. Dhar, S. Lodha, and A. Kumar, “Novel Nano-Electroplating-Based Plasmonic Platform for Giant Emission Enhancement in Monolayer Semiconductors” ACS Applied Materials and Interfaces, 15, 49, 57783–57790, 2023.

91. K. Konwar, M. Bora, S. D. Kaushik, A. Chaturvedi, D. Kumar, A. Dutta, R. Mukhopadhyay, P. D. Babu, P. Sharma, S. Lodha, D. Sen, P. M. Ajayan, and P. Deb, “Ni1–xZnxFe2O4@CoO (x = 0.25 and 0.50) Nanoparticles for Magnetic Resonance Imaging”, ACS Applied Nano Materials, 6, 21, 20440–20457, 2023.

90. K. Thakar, B. Rajendran, S. Lodha, “Ultra-Low Power Neuromorphic Obstacle Detection Using a Two-Dimensional Materials-Based Subthreshold Transistor”, npj 2D Materials and Applications, 7 (63), 2023.

89. H. Liu, S. B. Basuvalingam, S. Lodha, A. A. Bol, H. S. J. van der Zant, P. G. Steeneken, and G. J. Verbiest “Nanomechanical Resonators Fabricated by Atomic Layer Deposition on Suspended 2D Materials”, 2D Materials, 10 (4), 045023, 2023.

88. N. Manikanthababu, C. Joishi, J. Biswas, K. Prajna, K. Asokan, J. V. Vas, R. Medwal, R. C. Meena, S. Lodha, and R. Singh, “Ion irradiation-induced interface mixing and the charge trap profiles investigated by in situ electrical measurements in Pt/Al2O3/β-Ga2O3 MOSCAPs”, IEEE Transactions on Electron Devices, 70 (7), 3711-3717, 2023.

87. H. Jawa, N. Khandare, A. Varghese, S. Sahoo, S. Lodha, “Enhanced Photoresponse of a Dielectric-free Suspended WSe2-ReS2 Heterostructure Photodetector, Applied Physics Letters, 122 (12), 121105, 2023.

86. R. Lengare, C. Joishi, S. Lodha, “Electrostatic Engineering of β-Ga2O3 Trench Metal-Insulator-Semiconductor Schottky Barrier Diodes Using a Bilayer Dielectric Stack”, IEEE Transactions of Electron Devices, 69, 10, 5476-5483, 2022.

85. H. Jawa, A. Varghese, S. Ghosh, S. Sahoo, Y. Yin, N. Medhekar, S. Lodha, “Wavelength-Controlled Photocurrent Polarity Switching in BP-MoS2 Heterostructure”, Advanced Functional Materials, 32 (25), 2112696, 2022.

84. A. Varghese, Y. Yin, M. Wang, S. Lodha, and N. V. Medhekar, “Near-Infrared and Visible-range Optoelectronics in 2D Hybrid Perovskite/Transition Metal Dichalcogenide Heterostructures”, Advanced Materials Interfaces, 9 (14), 2102174, 2022.

83. S. Ghosh, A. Varghese, H. Jawa, Y. Yin, N. V. Medhekar, and S. Lodha, “Polarity-Tunable Photocurrent through Band Alignment Engineering in a High-Speed WSe2/SnSe2 Diode with Large Negative Responsivity”, ACS Nano, 16, 3, 4578–4587, 2022.

82. P Tiwari, J, Biswas, C. Joishi, S. Lodha, “Nb2O5 high-k dielectric enabled electric field engineering of β-Ga2O3 metal-insulator-semiconductor (MIS) diode” Journal of Applied Physics, 130 (24), 245701, 2021.

81. K. Thakar and S. Lodha, “Multi-Bit Analog Transmission Enabled by Electrostatically Reconfigurable Ambipolar and Anti-Ambipolar Transport”, ACS Nano, 15 (12), 19692-19701, 2021.

80. D. Saha and S. Lodha, “First-principles based simulations of electronic transmission in ReS2/WSe2 and ReS2/MoSe2 type-II vdW heterointerfaces”, Scientific Reports, 11 (1), 1-10, 2021.

79. S. Nayak, S, Lodha, S. Ganguly, “Stress Engineering for Drive Current Enhancement in Silicon Carbide (SiC) Power MOSFETs”, IEEE Journal of the Electron Devices Society 9, 876-880, 2021.

78. S. Dhara, H. Jawa, S. Ghosh, A. Varghese, D. Karmakar, S. Lodha, “All-electrical high sensitivity-low power dual mode gas sensing and recovery with a WSe₂/MoS₂ pn heterodiode”, ACS Applied Materials and Interfaces, 13 (26), 30785-30796, 2021.

77. S. Ghosh, A. Varghese, K. Thakar, S. Dhara, S. Lodha, “Enhanced responsivity and detectivity of fast WSe2 phototransistor using electrostatically tunable in-plane lateral p-n homojunction”, Nature Communications, 12 (1), 1-9, 2021.

76. S. Nayak, B. SanthiBhushan, S. Lodha, S. Ganguly, “Silicon carbide planar junctionless transistor for low-medium voltage power electronics“, Journal of Physics Communications 5 (2), 025009, 2021.

75. H. Jawa, A. Varghese, S. Lodha, “Electrically Tunable Room Temperature Hysteresis Crossover in Underlap MoS₂ FETs”, ACS Applied Materials and Interfaces, 13, 7, 9186–9194, 2021.

74. A. Tyagi, J. Biswas, A. Kottantharayil, K. Ghosh, S. Lodha, “Performance Analysis of Silicon Carrier Selective Contact Solar Cells with ALD MoOx as Hole Selective Layer”, Silicon, 1-8, 2021.

73. J. Biswas, G. Bajaj, A. Tyagi, P. Goradia, S. Lodha, “Tunable optical and electrical properties of thermal and plasma-enhanced atomic layer deposited Si-rich SixTi1-xO2 thin films”, Journal of Applied Physics, 129 (5), 055303, 2021.

72. D. Biswas, C. Joishi, J. Biswas, P. Tiwari, S. Lodha, “Charge trap layer enabled positive tunable V_fb in β-Ga₂O₃ gate stacks for enhancement mode transistors”, Applied Physics Letters, 117, 172101, 2020. Link

71. C Joishi, Z Xia, JS Jamison, SH Sohel, RC Myers, S Lodha, S Rajan, “Deep-Recessed β-Ga₂O₃ Delta-Doped Field-Effect Transistors With itIn Situ Epitaxial Passivation”, IEEE Transactions on Electron Devices, 67, 11, 4813-4819, 2020. Link

70. A. Varghese, D. Saha, K. Thakar, V. Jindal, S. Ghosh, N. Medhekar, S. Ghosh, S. Lodha, “Near-direct bandgap WSe₂/ReS₂ type-II pn heterojunction for enhanced ultrafast photodetection and high-performance photovoltaics”, Nano Letters, 20, 3, 1707-1717, 2020. Link

69. P. Kumar, K. Thakar, N. C. Verma, J. Biswas, T. Maeda, A. Roy, K. Kaneko, C. K. Nandi, S. Lodha, V. Balakrishnan, “Polymorphic In-Plane Heterostructures of Monolayer WS2 for Light-Triggered Field Effect Transistors”, to appear in ACS Applied Nano Materials, 2020.

68. S. Dev, K. Khiangte, S. Lodha, “Wafer-scale mono-crystalline GeSn alloy on Ge by sputtering and solid phase epitaxy”, Journal of Physics D, 53, 21, 2020. Link

67. N. Goyal, D. MA Mackenzie, V. Panchal, H. Jawa, O. Kazakova, D. H. Petersen, S. Lodha, “Enhanced thermally aided memory performance using few-layer ReS₂ transistors”, Applied Physics Letters, 116 (5), 052104, 2020. Link

66. K. Thakar and S. Lodha, “Optoelectronic and Photonic Devices based on Transition Metal Dichalcogenides”, invited review article in Materials Research Express, 7 (1), 014002, 2020. Link

65. S. Dev, N. Pradhan, N. Variam and S. Lodha, “Impact of N2 Co-implant on Phosphorus Diffusion and Activation for n+/p Ge Junctions”, IEEE Transactions on Electron Devices, 67 (2), 419-423, 2020. Link

64. D. Saha, A. Varghese and S. Lodha, ” Atomistic Modeling of van der Waals Heterostructures with Group-6 and Group-7 Monolayer Transition Metal Dichalcogenides for Near Infrared/Short-wave Infrared Photodetection” ACS Applied Nano Materials, 3 (1), 820-829, 2019. Link

63. J. F. McGlone, Z. Xia, C. Joishi, S. Lodha, S. Rajan, S. A. Ringel, and A. R. Arehart, “Identification of Critical Buffer Traps in Si Delta-doped β-Ga₂O₃ MESFETs”, Applied Physics Letters, 115 (15), 153501, 2019. Link

62. N. Goyal, S. Mahapatra and S. Lodha, “ Ultra-fast Characterization of Hole Trapping Near Black Phosphorus (BP)/SiO₂ Interface During NBTI Stress in 2D BP p-FETs,” (Invited paper) IEEE Transactions on Electron Devices, 66 (11), 4572-4577, 2019. Link

61. K. Deka, A. Guleria, D. Kumar, J. Biswas, S. Lodha, S. D. Kaushik, S. Dasgupta, P. Deb, “Exclusive T2 MRI contrast enhancement by mesoporous carbon framework encapsulated manganese oxide nanoparticles”, Current Applied Physics 20 (1), 89-95, 2019. Link

60. S. Dev and S. Lodha, “Process Variation-Induced Contact Resistivity Variability in Nanoscale MS and MIS Contacts”, IEEE Transactions on Electron Devices, vol. 66, no. 10, 4320 - 4325, 2019. Link

59. P. Kumar, J. Biswas, J. Pandey, K. Thakar, A. Soni, S. Lodha and V. Balakrishnan“Selective oxidation of WS2 defect domain with sub monolayer thickness leads to multi-fold enhancement in Photoluminescence” Advanced Material Interfaces, 1900962, 2019. Link

58. N. Goyal, N. Parihar, H. Jawa, S. Mahapatra, S. Lodha “Accurate Threshold Voltage Reliability Evaluation of Thin Al₂O₃ Top Gate Dielectric Black Phosphorous FETs Using Ultrafast Measurement Pulses”, ACS Applied Materials and Interfaces, 11, 26, 23673-23680, 2019. Link

57. C. Joishi, Y. Zhang, Z. Xia, W. Sun, A. R. Arehart, S. Ringel, S. Lodha, and S. Rajan, “Breakdown characteristics of β-(Al_0.22Ga_0.78)₂O₃/Ga₂O₃ field-plated modulation doped field effect transistors with SiNx passivation”, IEEE Electron Device Letters, 40 (8), 1241-1244, 2019. Link

56. Z. Xia, H. Xuu, C. Joishi, J. McGlone, N. K. Kalarickal, S. H. Sohel, M. Brenner, S. Ringel, S. Lodha, W. Lu, S. Rajan, “β-Ga₂O₃ Delta-Doped Field Effect Transistors with Current Gain Cutoff Frequency of 27 GHz”, IEEE Electron Device Letters, 40 (7), 1052-1055, 2019. Link

55. D. Biswas, C. Joishi, J. Biswas, K. Thakar, S. Rajan and S. Lodha, “Enhanced n-type β-Ga₂O₃ (201) gate stack performance using Al₂O₃/SiO₂ bi-layer dielectric”, Applied Physics Letters, 114, 212106, 2019. Link

54. J. Biswas, N. Pradhan, D. Biswas, S. Das, S. Mahapatra, S. Lodha, “Impact of punch-through stop implants on channel doping and junction leakage for Ge p-FinFET applications”, IEEE Transactions on Electron Devices, 66 (4), 1635-1641, 2019. Link

53. A. Tyagi, K. Ghosh, A. Kottantharayil, S. Lodha, “An Analytical Model for the Electrical Characteristics of Passivated Carrier-Selective Contact Solar Cell”, IEEE Transactions on Electron Devices, 66 (3), 1377-1385, 2019. Link

52. K. Deka, A. Guleria, D. Kumar, J. Biswas, S. Lodha, S. Kaushik, S. Choudhary, S. Dasgupta and P. Deb, “Janus Nanoparticles for Contrast Enhancement of T1-T2 Dual Mode Magnetic Resonance Imaging”, Dalton Transactions, 48 (3), 1075-1083, 2019. Link

51. K. Thakar, B. Mukherjee, S. Grover, N. Kaushik, M. Deshmukh, S. Lodha, ““Multilayer ReS₂ Photodetectors with Gate Tunability for High Responsivity and High Speed Applications”, ACS Applied Materials and Interfaces, 10, 42, 36512 (2018). Link

50. K. Saikia, K. Bhattacharya, D. Sen, S. D. Kaushik, J. Biswas, S. Lodha, B. Gogoi, A. K. Buragohain, W. Kockenberger, P. Deb, “Solvent evaporation driven entrapment of magnetic nanoparticles in mesoporous frame for designing a highly efficient MRI contrast probe”, Applied Surface Science, 464, 567-576 (2018). Link

49. C. Joishi, Z. Xia, J. MacGlone, Y. Zhang, A. R. Arehart, S. Ringel, S. Lodha, S. Rajan, “Effect of Buffer Iron Doping on Delta-Doped β-Ga2O3 Metal Semiconductor Field Effect Transistors”, Applied Physics Letters, 113, 123501 (2018). Link

48. C. Joishi, S. Ghosh, S. Kothari, N. Parihar, S. Mukhopadhyay, S. Mahapatra, S. Lodha, “Understanding PBTI in replacement metal gate Ge n-channel FETs with ultrathin Al₂O₃ and GeO_x ILs using ultrafast charge trap-detrap techniques”, IEEE Transactions on Electron Devices, 65 (10), 4245-4253 (2018). Link

47. D. Vaidya, S. Lodha, S. Ganguly, “Electrical-equivalent van der Waals gap for two-dimensional bilayers”, to appear in Physical Review Applied, (2018).

46. S. Singh, K. Thakar, N. Kaushik, B. Muralidharan, S. Lodha, “Performance Projections for Two-dimensional Materials in Radio-Frequency Applications” Physical Review Applied, 10 (1), 014022, (2018). Link

45. N. Kaushik, S. Ghosh and S. Lodha, “Low-Frequency Noise in Supported and Suspended MoS₂ Transistors”, IEEE Transactions on Electron Devices, 65 (10), 4135-4140 (2018). Link

44. S. Dev, M. Meena, Harshvardhan, S. Lodha, “Statistical Simulation Study of Metal Grain Orientation Induced MS and MIS Contact Resistivity Variability for 7 nm FinFETs”, IEEE Transactions on Electron Devices, 65 (8), 3104-3111 (2018).Link

43. Y. Zhang, C. Joishi, Z. Xia, M. Brenner, S. Lodha, S. Rajan, “Demonstration of β-(Al_xGa_1-x)₂O₃/Ga₂O₃ Double Heterostructure Field Effect Transistors”, Applied Physics Letters, 112 (23), 233503 (2018). Link

42. J. McGlone, Z. Xia, Y. Zhang, C. Joishi, S. Lodha, S. Rajan, S. Ringel, A. Arehart, “Trapping effects in Si δ-doped β-Ga₂O₃ MESFETs on an Fe-doped β-Ga₂O₃ substrate” IEEE Electron Device Letters, 39 (7), 1042-1045 (2018). Link

41. N. Goyal, N. Kaushik, H. Jawa, and S. Lodha, “Enhanced Stability and Performance of Few-Layer Black Phosphorus Transistors by Electron Beam Irradiation”, Nanoscale, vol. 10, issue 24, pp. 11616-11623 (2018). Link

40. S. Kothari, D. Vaidya, H. Nejad, N. Variam, S. Ganguly, and S. Lodha, “Plasma-assisted As Implants For Effective Work Function Modulation of TiN/HfO2 Gate Stacks on Germanium”, Applied Physics Letters, 112 (20), 203503 (2018). Link

39. Z. Xia, C. Joishi, S. Krishnamoorthy, S.Bajaj, Y. Zhang, M. Brenner, S. Lodha, S. Rajan. “Delta doped β-Ga2O3Field Effect Transistors with Regrown Ohmic Contacts”, IEEE Electron Device Letters, vol. 39, issue 4, pp. 568 - 571 (2018). Link

38. C. Joishi, S. Rafique, Z. Xia, L. Han, S. Krishnamoorthy, Y. Zhang, S. Lodha, H. Zhao, S. Rajan, “LPCVD grown β-Ga2O3 Bevel Field-plated Schottky Barrier Diodes”, Applied Physics Express, vol. 11, no. 3 (2018). Link

37. P. Kumar, N. Verma, N. Goyal, J. Biswas, S. Lodha, C. Nandi, V. Balakrishnan, “Phase engineering of seamless heterophase homojunctions with co-existing 3R and 2H phases in WS2 monolayers”, Nanoscale, 10, pp. 3320-3330 (2018). Link

36. K. Deka, A. Guleria, D. Kumar, J. Biswas, S. Lodha, S. D. Kaushik, S. Dasgupta, P. Deb, “Mesoporous 3D Carbon Framework Encapsulated Manganese Oxide Nanoparticles as Biocompatible T 1 MR Imaging Probe”, Colloids and Surfaces A: Physicochemical and Engineering Aspects, Vol. 539, pp. 229–236 (2018). Link

35. A. Tyagi, K. Ghosh, A. Kottantharayil, S. Lodha, “Performance Evaluation of Passivated Silicon Carrier Selective Contact Solar Cell”, IEEE Transactions on Electron Devices, Vol. 65, 1 (2018). Link

34. N. Kaushik, D. Mackenzie, K. Thakar, N. Goyal, B. Mukherjee, P. Boggild, D. H. Petersen, and S. Lodha, “Reversible Hysteresis Inversion in MoS2 Field Effect Transistors”, Nature 2D Materials and Applications, 1 (1), 34 (2017). Link

33. S. Krishnamoorthy, Z. Xia, C. Joishi, Y. Zhang, J. McGlone, J. Johnson, M. Brenner, A. Arehart, J. Hwang, S. Lodha, S. Rajan, “Modulation-doped β-(Al0.2Ga0.8)2O3/ Ga2O3 Field-Effect Transistor”, Appl. Phys. Lett., 111, 023502 (2017). Link

32. D. Vaidya, S. Lodha and S. Ganguly, “Ab-initio Study of NiGe/Ge Schottky Contact”, Journal of Applied Physics 121 (14), 145701 (2017). Link

31. D. Biswas, J. Biswas, S. Ghosh, B. Wood, and S. Lodha, “Enhanced thermal stability of Ti/TiO2/n-Ge contacts through plasma nitridation of TiO2 interfacial layer”, Applied Physics Letters, 110, 052104 (2017). Link

30. B. Mukherjee, N. Kaushik, R. P. N. Tripathi, A. M. Joseph, P. K. Mohapatra, S. Dhar, B. P. Singh, G. V. Pavan Kumar, E. Simsek, and S. Lodha, “Exciton Emission Intensity Modulation of Monolayer MoS2 via Au Plasmon Coupling” Scientific Reports, 7, 41175 (2017). Link

29. S. Karande, N. Kaushik, D. Narang, D. Late, and S. Lodha, “Thickness Tunable Transport in Alloyed WSSe Field Effect Transistors”, Applied Physics Letters, 109, 142101 (2016) Link

28. S. Ghosh, P. Bhatt, Y. Tiwari, C. Joishi, and S. Lodha, “Temperature and Field Dependent Low Frequency Noise Characterization of Ge n-FETs”, Journal of Applied Physics, 120, 095703 (2016). Link

27. S. Kothari, C. Joishi, H. Nejad, N. Variam, and S. Lodha, “Plasma-assisted low energy N2 implant for Vfb tuning of Ge gate stacks”, Applied Physics Letters, 109 (7), 072105. Link

26. S. Kothari, C. Joishi, D. Biswas, D. Vaidya, S. Ganguly, and S. Lodha, “Improved n-channel Ge gate stack performance using HfAlO high-k dielectric for varying Al concentration”, Applied Physics Express, 9 (7), 071302 (2016). Link

25. S. Dev, N. Remesh, Y. Rawal, P. P. Manik, B. Wood, and S. Lodha, “Low resistivity contact on n-type Ge using low work-function Yb with a thin TiO2 interfacial layer”, Applied Physics Letters, 108 (10), 103507 (2016). Link

24. A. Nipane, D. Karmakar, S. Karande, N. Kaushik and S. Lodha, “Few Layer MoS2 p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation”, ACS Nano, 10 (2), pp. 2128–2137 (2016). Link

23. N. Kaushik, D. Karmakar, A. Nipane, S. Karande, and S. Lodha, “Interfacial n-Doping using an Ultra-Thin TiO2 Layer for Contact Resistance Reduction in MoS2”, ACS Applied Materials and Interfaces, 8 (1), pp 256–263 (2016). Link

22. P. Paramahans Manik, and S. Lodha, “Contacts on n-type Germanium using variably doped ZnO and highly doped ITO interfacial layers”, Applied Physics Express, vol. 8, no. 5, 051302 (2015). Link

21. P. Bhatt, P. Swarnkar, A. Misra, J. Biswas, C. Hatem, A. Nainani, and S. Lodha, “Enhanced Ge n+/p Junction Performance Using Cryogenic Phosphorous Implantation”, IEEE Transactions on Electron Devices 62 (1),69 (2015). Link

20. A. Ray, R. Nori, P. Bhatt, S. Lodha, R. Pinto, V. R. Rao, F. Jomard, M. Neumann-Spallart, “Optimization of a plasma immersion ion implantation process for shallow junctions in silicon”, Journal of Vacuum Science & Technology A 32 (6), 061302 (2014). Link

19. S. Mukherjee, R. Singh, S. Gopinathan, S. Murugan, S. Gawali, B. Saha, J. Biswas, S. Lodha, A. Kumar,”Solution Processed Poly(3,4-ethylenedioxythiophene) thin films as transparent Conductor: Effect of p-Toluenesulphonic Acid in Dimethyl Sulfoxide“, ACS Applied Materials & Interfaces, 6 (20), 17792–17803 (2014). Link

18. N. Kaushik, A. Nipane, F. Basheer, S. Dubey, S. Grover, M. Deshmukh, S. Lodha, “Schottky Barrier Heights for Au and Pd Contacts to MoS2”, Applied Physics Letters, 105, 113505 (2014). Link

17. P. Bhatt, P. Swarnkar, F. Basheer, C. Hatem, A. Nainani, S. Lodha, “High Performance 400 ºC p+/n Ge Junctions Using Cryogenic Boron Implantation”, IEEE Electron Device Letters, 35 (7), 717-719 (2014). Link

16. S. Mittal, S. Gupta, A. Nainani, M.C. Abraham, K. Schuegraf, S. Lodha, and U. Ganguly “Epitaxially Defined (ED) FinFET: Variability Resistant and High Performance Technology”, IEEE Transactions on Electron Devices, 61 (8), 2711 - 2718 (2014). Link

15. P. Bhatt, K. Chaudhuri, S. Kothari, A. Nainani, S. Lodha, “Germanium oxynitride gate interlayer dielectric formed on Ge(100) using decoupled plasma nitridation”, Applied Physics Letters, 103, 172107 (2013). Link

14. R. Mandapati, A. Borkar, V. S. S. Srinivasan, P. Bafna, P. Karkare, S. Lodha, B. Rajendran, and U. Ganguly, “On Pairing of Bipolar RRAM Memory with NPN Selector based on Set/Reset Array Power Considerations”, IEEE Transactions in Nanotechnology, 12, no. 6 , 1178-1184 (2013).Link

13. R. Mandapati, A. Borkar, V. S. S. Srinivasan, P. Bafna, P. Karkare,S. Lodha, U. Ganguly, “The Impact of n-p-n Selector-Based Bipolar RRAM Cross-Point on Array Performance”, IEEE Transactions on Electron Devices, vol. 60, no. 10, 3385-3392 (2013). Link

12. S. Gupta, P. Paramahans Manik, R. K. Mishra, A. Nainani, M. C. Abraham, S. Lodha, “Contact resistivity reduction through interfacial layer doping in metal-interfacial layer-semiconductor contacts”, Journal of Applied Physics, 113, 234505 (2013). Link

11. S. Sant, S. Lodha, U. Ganguly, S. Mahapatra, S. Ganguly, V. Moroz, L. Smith, and F. Heinz, “Calculations of band gap bowing and band offsets in relaxed and strained Si1−xGex alloys by employing a new nonlinear interpolation scheme,” Journal of Applied Physics, 113, 033708 (2013). Link

10. P. Paramahans, R. K. Mishra, V. Pavan Kishore, P. Ray, A. Nainani, Y-C. Huang, M. C. Abraham, U. Ganguly, and S. Lodha, “Fermi-level unpinning and low resistivity in contacts to n-type Ge with a thin ZnO interfacial layer”, Applied Physics Letters, 101, 182105 (2012). Link

9. V. S. Srinivasan, S. Chopra, P. Karkare, P. Bafna, S. Lashkare, P. Kumbhare, Y. Kim, S. Srinivasan, S. Kuppurao, S. Lodha, U Ganguly, “Punch-through Diode based Bipolar RRAM Selector by Si Epitaxy”, IEEE Electron Devices Letters, 33, 1396 (2012). Link

8. V. Pavan Kishore, P. Paramahans, S. Sadana, U. Ganguly, and S. Lodha, “Nanocrystal-based Ohmic contacts on n and p-type germanium”, Applied Physics Letters, 100, 142107 (2012). Link

7. P. D. Carpenter, S. Lodha, D. B. Janes, A. V. Walker, “Characterization of gold contacts in GaAs-based molecular devices: Relating structure to electrical properties”, Chemical Physics Letters, 472, 220 (2009).

6. S. Lodha and D. B. Janes, “Metal/Molecule/P-type GaAs Heterostructure Devices,” Journal of Applied Physics, 100, 024503 (2006).

5. S. Lodha, P. Carpenter and D. B. Janes, “Effect of Contact Properties on Current Transport in Metal/Molecule/GaAs Devices,” Journal of Applied Physics, 99, 024510 (2006).

4. S. Ghosh, H. Halimun, A. Mahapatro, J. Choi, S. Lodha and David Janes, “Device structure for electronic transport through individual molecules using nanoelectrodes,” Applied Physics Letters, 87, 233509 (2005).

3. S. Lodha and David B. Janes, “Enhanced current densities in Au/molecule/GaAs devices,” Applied Physics Letters, 85, 2809 (2004).

2. S. Lodha, David B. Janes and Nien-Po Chen, “Unpinned interface Fermi level in Schottky contacts to n-GaAs capped with low-temperature-grown GaAs; experiments and modeling using defect state distributions,” Journal of Applied Physics, 93, 2772 (2003).

1. S. Lodha, David B. Janes and Nien-Po Chen, “Fermi level unpinning in ex-situ Schottky contacts on n-GaAs capped with low-temperature-grown GaAs,” Applied Physics Letters, 80, 4452 (2002).

1. P. Chakrabarty, S. Sen, S. Sahoo and S. Lodha, “Enhanced optoelectronic and electrical characteristics in nanopatterned 2D dielectric (hBN)/ semiconductor (WS2) field effect transistors”, to be presented at 8th IEEE EDTM, March 3-6, 2024.
2. P. Sharma, Y. Parasubotu, S. Lodha, “High-k dielectric integration to improve breakdown characteristics of β- Ga2O3 Schottky diode”, to be presented at 8th IEEE EDTM, March 3-6, 2024.
3. S. Sahoo, A. Varghese, S. Lodha, “Ferroelectric induced Multidirectional Polarization in MoS2 for Memory Applications”, 81st Device Research Conference, UCSB, June, 2023.
4. Abhay VS, A. Varghese, S. Lodha, Anshuman Kumar, “Engineering exciton emission in monolayer TMDCs by dielectric encapsulation”, APS March Meeting, 2023.
5. K. Thakar, B. Rajendran, S. Lodha, “Biomimetic Spiking Neuron Enabled by Subthreshold Operation of 2D Material-Based Transistor with ~500 Picojoules/Spike”, 80th Device Research Conference, June 26-29, Columbius, Ohio, USA, 2022.
6. A. Varghese, Y. Yin, S. Lodha, N. Medhekar, “Optoelectronics based on Transition Metal Dichalcogenide/2D Perovskite Heterostructures”, APS March Meeting, March 18, 2021.
7. S. Nayak, S. Lodha, S. Ganguly, “Hybrid gate dielectric with Si3N4 stressor for LDMOSFET”, IEEE Latin America Electron Devices Conference (LAEDC), April, 2021.
8. S. Nayak, S. Lodha, S. Ganguly, “Fully/partially suspended gate SiC-based FET for power applications”, IEEE Latin America Electron Devices Conference (LAEDC), April, 2021.
9. K. Thakar and S. Lodha, “Electrostatically Gated Multi-functional WSe2 Transistor to Enable Multi-bit Communication Schemes”, MRS Virtual Spring/Fall Meeting & Exhibit, Nov 28 - Dec 4, 2020.
10. D. Saha and S. Lodha, “Study of Transmission Properties of Distorted 1T ReS2 Based Type-II van der Waals Heterostructures”, 2020 MRS Virtual Spring/Fall Meeting & Exhibit, November 28- December 4, 2020.
11. R. Lengare, C. Joishi and S. Lodha, “Bilayer dielectrics enabled enhanced RESURF of β-Ga2O3 trench Schottky barrier diodes”, 5th IEEE ICEE, New Delhi, Nov. 2020.
12. P. Tiwari, J. Biswas, C. Joishi, S. Lodha, ” Nb2O5 high permittivity dielectric enabled electric field engineering of β-Ga2O3 Schottky heterojunction diodes“, 5th IEEE ICEE, Delhi, Nov. 2020.
13. H. Jawa, S. Ghosh and S. Lodha, “Enhanced photo response in MoS2 transistor using embedded BP”, 78th Device Research Conference, June 21-24, 2020.
14. K. Thakar and S. Lodha, “Optically-induced Frequency and Phase Modulation in Electrostatically Doped Anti ambipolar WSe2 Transistors”, 78th Device Research Conference, June 21-24, 2020.
15. S. Ghosh, S. Dhara, A. Varghese, K. Thakar, S. Lodha, ” Tunable WSe2 phototransistor enabled by electrostatically doped lateral p-n homojunction“, 77th Device Research Conference, Ann Arbor, June 23-26, 2019.
16. K. Thakar, S. Lodha, “Photo-amplification in Bipolar WSe2 Transistors with Electrostatic Gating”, 77th Device Research Conference, Ann Arbor, June 23-26, 2019.
17. S. Dhara, K. Thakar, S. Ghosh, A. Varghese, S. Mahapatra, S. Lodha, “Comparative Evaluation of vdW Materials Based PN Junction and FET for Gas Sensing” , 77th Device Research Conference, Ann Arbor, June 23-26, 2019.
18. S. Lodha, K. Thakar, S. Singh, B. Mukherjee, N. Kaushik, S. Grover, B. Muralidharan, M. Deshmukh, “Physics and Modeling of Two-dimensional (2D) RF Transistors and Photodetectors”, Invited paper, 3rd Electron Devices Technology and Manufacturing Conference (EDTM), Singapore, March 2019.
19. S. Kothari, J. S. Rathore, K. Khiangte, S. Mahapatra and S. Lodha, “Interlayer Engineering in GeSn Gate Stacks for Advanced CMOS”, 4th IEEE ICEE, Bengaluru, Dec. 2018. Best paper award
20. S. Dev, N. Pradhan, N. Variam, S. Lodha, “Impact of N2 implant on Phosphorus diffusion for shallow n+/p Ge junctions”, 4th IEEE ICEE, Bengaluru, Dec. 2018. Best poster award
21. K. Thakar, A. Varghese, S. Dhara, S. Ghosh and S. Lodha, “Low-EOT MoS 2 FET for Efficient Photodetection and Gas Sensing”, 4th IEEE ICEE, Bengaluru, Dec. 2018. Best manuscript award
22. B. Mukherjee, S. Roy, E. Simsek, S. Ghosh, V. G. Achanta, S. Lodha, “Plasmonic Enhancement in Anisotropic Thin Films of Rhenium Disulphide (ReS2), 31st Annual Conference of the IEEE Photonics Society, Reston, VA, USA, Sept. 30- Oct 4, (2018).
23. A. Varghese, D. Joseph, S. Ghosh, K. Thakar, N. Medhekar, S. Lodha, “WSe2/ReS2 vdW Heterostructure for Versatile Optoelectronic Applications”, 76th Device Research Conference, Santa Barbara, June 24-27, 2018.
24. N. Goyal, D. M.A. Mackenzie, V. Panchal, H. Jawa, O. Kazakova, D. H. Petersen, S. Lodha, “Thermally Aided Nonvolatile Memory Using ReS2 Transistors”, 76th Device Research Conference, Santa Barbara, June 24-27, 2018.
25. H. Jawa, S. Dhara, K. Thakar, S. Ghosh, S. Lodha, “Evaluating Performance of Dual-Gate InSe FETs”, 76th Device Research Conference, Santa Barbara, June 24-27, 2018.
26. C. Joishi, Z. Xia, J. McGlone, Y. Zhang, A. R. Arehart, S. Ringel, S. Lodha, S. Rajan, “Substrate Effects on Transport and Dispersion in Delta-Doped β-Ga2O3 Field Effect Transistors”, 60th Electronic Materials Conference, Santa Barbara, June 27-29, 2018.
27. Z. Xia, C. Joishi, S. Krishnamoorthy, S. Bajaj, Y. Zhang, M. Brenner, S. Lodha, S. Rajan, “Delta-doped β-Ga 2 O 3 Field Effect Transistors for Radio Frequency Operation”, 60th Electronic Materials Conference, Santa Barbara, June 27-29, 2018.
28. D. M. A. Mackenzie, P. R. Whelan, A. Shivayogimath, N. Kaushik, N. Goyal, J. M. Caridad, J. D. Thomsen, T. J. Booth, L. Gammelgaard, B. S. Jessen, S. Lodha, P. Bøggild, D. H. Petersen, “Quality Assessment of 2D Materials: continuity, uniformity and accuracy of mobility measurements”, GraphIn2018, Bilbao, Spain, March 13-15, 2018.
29. D. Vaidya, S. Lodha and S. Ganguly, “Comparison of Basis Sets for Efficient Ab-initio Modeling of Semiconductors”, SISPAD, Japan, 2017.
30. S. Kothari, H. Nejad, N. Variam, S. Lodha, “Multi-VT with metal gate work-function modulation by PLAD implants for Ge FinFET applications”, SSDM, Japan, 2017.
31. S. Krishnamoorthy, Z. Xia, C. Joishi, S. Bajaj, Y. Zhang, M. Brenner, S. Lodha, S. Rajan, “Towards Modulation-doped β-(AlGa)2O3/ Ga2O3 Field Effect Transistors for High Frequency Electronics”, 2nd International Workshop on Gallium Oxide and Related Materials Parma (Italy) – September 12-15, 2017.
32. Z. Xia, S. Krishnamoorthy, C. Joishi, S. Bajaj, Y. Zhang, M. Brenner, S. Lodha, S. Rajan, “ Delta-doped β-Ga2O3 Metal Semiconductor Field Effect Transistors with Regrown Ohmic Contacts”, 2nd International Workshop on Gallium Oxide and Related Materials Parma (Italy) – September 12-15, 2017.
33. Z. Xia, S. Krishnamoorthy, C. Joishi, S. Bajaj, Y. Zhang, M. Brenner, S. Lodha, S. Rajan “Delta-doped β-Ga2O3 Field Effect Transistors with Patterned Regrown Ohmic Contacts,” MRS Fall Meeting, Boston, 2017.
34. S. Das, A. Singh, T. Kundu, S. Lodha, V. R. Rao, “Off-stoichiometry thiol-ene polymer with tunable localized surface-plasmon resonance for flexible optoelectronic Lab-on Chip device application”, International Conference on Smart Materials, Structure & System (ISSS2017), IISc, Bangalore, July 2017.
35. B. Mukherjee, K. Thakar N. Kaushik and S. Lodha, “Suspended ReS2 FET for Improved Photocurrent-time Response”, 75th DRC, June 25-28, Notre Dame, USA 2017.
36. N. Goyal, N. Kaushik, H. Jawa and S. Lodha, “Effect of Electron Beam Irradiation on Black Phosphorus Field EffectTransistor Performance”, 75th DRC, June 25-28, Notre Dame, USA 2017.
37. A. Tyagi, K.Ghosh, A. Kottantharayil, and S. Lodha, “Carrier Selective Back Contact (CSBC) Solar Cell using Transition Metal Oxides”, PVSC, June 25-30, Washington DC, USA, 2017.
38. C. Joishi, S. Kothari, S. Ghosh, S. Mukhopadhyay, S. Mahapatra, and, S. Lodha “Ultrafast PBTI characterization on Si-free gate last Ge nFETs with stable and ultrathin Al2O3 IL” accepted at International Reliability Physics Symposium (IRPS), Monterey, CA, April 2017.
39. P. P. Manik, S. Dev, N. Remesh, Y. Rawal, S. Khopkar, S. Lodha, “Ge n-channel FinFET Performance Enhancement Using Low Work Function Metal-Interfacial Layer-Ge Contacts” accepted at VLSI-TSA, Hsinchu, Taiwan, April 2017.
40. S. Bhatia, S. Kothari, N. Raorane, S. Lodha, P.R. Nair, A. Antony, “Minority Carrier Lifetime Enhancement of C-Si/TiO2 Heterojunction by Post Deposition Annealing”, 32nd European Photovoltaic Solar Energy Conference and Exhibition, Munich, 2016.
41. S. Ghosh, P. Bhatt, Y. Tiwari, S. Lodha, “Low Frequency Noise and Mobility Correlation from RT to Low Temperatures for n-Channel Ge MOSFETs”, SSDM, Japan, 2015.
42. D. Vaidya, A. Nainani, N. Yoshida, B. Wood, S. Lodha, S. Ganguly, “Integrated modeling platform for high-k/alternate channel material heterostructure stacks”, SISPAD, September 9-11, Washington DC, USA, 2015.
43. S. Kothari, C. Joishi, D. Vaidya, H. Nejad, B. Colombeau, S. Ganguly, S. Lodha,”Metal Gate VT Modulation Using PLAD N2 Implants for Ge P-FinFET Applications”, ESSDERC, Austria, 2015.
44. Ankur Nipane, Naveen Kaushik, Shruti Karande, Debjani Karmakar and Saurabh Lodha, “P-type doping of MoS2 with phosphorus using a plasma immersion ion implantation (PIII) process”, Device Research Conference, June 22-24, Ohio, 2015.
45. Naveen Kaushik, Ankur Nipane, Shruti Karande and Saurabh Lodha, “Contact resistance reduction in MoS2 FETs using ultra-thin TiO2 interfacial layers”, Device Research Conference, June 22-24, Ohio, 2015.
46. Shraddha Kothari, Chandan Joishi, Dipankar Biswas, Dhirendra Vaidya, Swaroop Ganguly, Saurabh Lodha, “Enhanced Ge n-channel gate stack performance using HfAlO high-k dielectric”, Device Research Conference, June 22-24, Ohio, 2015.
47. N. Remesh, S. Dev, Y. Rawal, S. Khopkar, P. P. Manik, B. Wood, A. Brand, S. Lodha, “Contact barrier height and resistivity reduction using low work-function metal (Yb)-interfacial layer-semiconductor contacts on n-type Si and Ge”, Device Research Conference, June 22-24, Ohio, 2015.
48. S. Dutta, S. Mittal, S. Lodha, U. Ganguly, J. Schulze, “A Bulk Planar SiGe Quantum-Well based ZRAM with Low VT Variability”, IMW, Monterey, CA, 2015.
49. P. Bhatt, P. Swarnkar, S. Mittal, F. Basheer, C. Thomidis, C. Hatem, B. Colombeau, N. Variam, A. Nainani, and S. Lodha, “Cryogenic implantation for source/drain junctions in Ge p-channel (Fin)FETs,” Device Research Conference, June 22-26, Santa Barbara, USA.
50. P. P. Manik, R. K. Mishra, U. Ganguly, S. Lodha, “Indium tin oxide (ITO) and Al-doped ZnO (AZO) interfacial layers for Ohmic contacts on n-type Germanium,” Device Research Conference, June 22-26, Santa Barbara, USA.
51. N. Kaushik, A. Nipane, F. Basheer, S. Dubey, S. Grover, M. Deshmukh, S. Lodha, “Evaluating Au and Pd contacts in mono and multilayer MoS2 transistors,” Device Research Conference, June 22-26, Santa Barbara, USA.
52. S. Mittal, S. Kurude, S. Dutta, P. Debashis, S. Ganguly, S. Lodha, A. Laha, U. Ganguly, “Epitaxial Rare Earth Oxide (EOx) FinFET: a variability-resistant Ge FinFET architecture with multi VT,” Device Research Conference, June 22-26, Santa Barbara, USA.
53. Yaksh Rawal, Debashree Burman*, Prashanth P. Manik, Piyush Bhatt, Anoop C., Saurabh Lodha, Swaroop Ganguly, Maryam Shojaei Baghini, “Performance Comparison of MIM and MIS Diodes for Energy Harvesting Applications,” IEEE International Conference of Electron Devices and Solid-State Circuits, Chengdu, June 18-20, 2014.
54. P. Bhatt, P. Swarnkar, A. Misra, J. Biswas, C. Hatem, A. Nainani, S. Lodha, “Ge n+/p junctions using temperature-based phosphorous implantation,” accepted in 7th International SiGe Technology and Device Meeting (ISTDM 2014), 2 – 4 June 2014, Singapore.
55. R. Meshram, B. Das, R. Mandapati, S. Lashkare, S. Deshmukh, J. Schulze, S. Lodha, U. Ganguly, “High Performance Triangular Barrier Engineered NIPIN Selector for Bipolar RRAM”, International Memory Workshop, Taiwan, 2014.
56. P. Bhatt, P. Swarnkar, A. Misra, C. Hatem, A. Nainani and S. Lodha, “Cryo Implanted High Performance n+/p Junctions in Ge for future CMOS”, IEEE VLSI TSA, Hsinchu, Taiwan, April 2014. (Shortlisted for best paper award).
57. P. Debashis, S. Mittal, S. Lodha and U. Ganguly “Dopant Deactivation: A new challenge in sub-20nm Scaled FinFETs”, IEEE VLSI TSA, Hsinchu, Taiwan, April 2014.
58. D. Vaidya, S. Sant, A. Hegde, S. Lodha, U. Ganguly, S. Ganguly, “Modeling Charge Control in Heterostructure Nanoscale Transistors”, invited talk at IWPSD, New Delhi, December 2013.
59. S. Mittal, P. Debashis, A. Nainani, M. C. Abraham, S. Lodha and U. Ganguly “ Epi Defined (ED) FinFET with Dynamic Threshold: Reduced VT Variability, Enhanced Performance, and a novel Multiple VT”, IEEE INDICON, Mumbai, December 2013. (Best Paper Award)
60. R. K. Mishra, P. P. Manik, A. Nainani, S. Lodha, “Contacts to N-Type Si/Ge/Si:C Using Rare Earth Metals”, MRS Fall Meeting, Boston, Dec, 2013.
61. H. Mehta, S. Lodha, U. Ganguly, S. Ganguly, “Calibration of the Density-Gradient TCAD Model for Germanium FinFETs”, IEEE Regional Symposium on Micro and Nanoelectronics, Malaysia, Sept, 2013.
62. R. K. Mishra, U. Ganguly, S. Ganguly, S. Lodha, A. Nainani, M. Abraham, “Nickel germanide with rare earth interlayers for Ge CMOS applications”, IEEE International Conference of Electron Devices and Solid-State Circuits, Hong Kong, Jun, 2013.
63. S. Lashkare, P. Karkare, P. Bafna, M.V.S. Raju, V.S.S. Srinivasan, J. Schulze, S. Chopra, S. Lodha, U. Ganguly, “A Bipolar RRAM Selector with Designable Polarity Dependent On-Voltage Asymmetry”, International Memory Workshop, 2013.
64. P. Bhatt, K. Chaudhuri, Maharaja P., A. Nainani, M. Abraham, M. Subramaniam, U. Ganguly, S. Lodha, “Improved Nitridation of GeO2 Interfacial layer for Ge Gate Stack Technology”, vol. 1561, MRS Online Proceedings Library, 2013.
65. S. Mittal, S. Gupta, A. Nainani, M. Abraham, K. Schuegraf, S. Lodha, and U. Ganguly, “Epi Defined (ED) FinFET: An alternate device architecture for high mobility Ge channel integration in PMOSFET”, 5th IEEE International Nanoelectronics Conference (INEC), Jan. 2-4, 367 (2013).
66. R. Mandapati, A. Borkar, S. Srinivasan, P. Bafna, P. Karkare, S. Lodha, and U.Ganguly, “On Pairing Bipolar RRAM memory element with novel punchthrough diode based selector: Compact modeling to array performance”, 5th IEEE International Nanoelectronics Conference (INEC), Jan. 2-4, 309 (2013).
67. K. Chaudhuri, P. Bhatt, A. Nainani, M. Abraham, M Subramaniam, S. Kapadia, K. Schuegraf, U. Ganguly, S. Lodha, “Comparison of plasma and thermal nitridation of GeO2 interfacial layer for Ge CMOS”, 43rd IEEE Semiconductor Interface Specialists Conference, San Diego, CA, December 6-8, 2012.http://dx.doi.org/10.1557/opl.2013.877
68. S. Sant, S. Lodha, U. Ganguly, S. Ganguly, “Novel nonlinear interpolation for Si1−xGex bandstructure parameters”, IEEE International Conference of Electron Devices and Solid-State Circuits, Bangkok, Dec, 2012.
69. S. Deshmukh, R. Mandapati, S. Lashkare, A. Borkar, V. S. S. Srinivasan, S. Lodha, U. Ganguly, “Comparison of novel punch-through diode (NPN) selector with MIM selector for Bipolar RRAM”, 2012 12th Non-Volatile Memory Technology Symposium (NVMTS 2012), Singapore, Oct 31st –Nov 2nd, 2012.
70. S. Chopra, P. Bafna, P. Karkare, S. Srinivasan, S. Lashkare, P. Kumbhare, Y. Kim, S. Srinivasan, S. Kuppurao, S. Lodha, and U. Ganguly, “A Two Terminal Vertical Selector Device for Bipolar RRAM”, Pacific Rim Meeting on Electrochemical and Solid State Science (PRiME), Honolulu, Hawaii, USA, October 7-12 2012.
71. P. Paramahans, S. Gupta, R. K. Mishra, N. Agarwal, A. Nainani, Y. Huang, M.C. Abraham, S. Kapadia, U. Ganguly, S. Lodha, “ZnO: an attractive option for n-type metal-interfacial layer-semiconductor (Si, Ge, SiC) contacts”, VLSI Symposium on Technology, Hawaii, June 12-15 2012. http://dx.doi.org/10.1109/VLSIT.2012.6242472
72. P. Bafna, P. Karkare, S Srinivasan, S. Chopra, S. Lashkare, Y. Kim, S. Srinivasan, S. Kuppurao, S. Lodha, U. Ganguly, “4F2 Two-Terminal Selector for Bipolar RRAM: High on-current density and Random Dopant Fluctuation Effect”, Device Research Conference, Pittsburgh, 2012.
73. S. Mittal, S. Gupta, A. Nainani, M.C. Abraham, K. Schuegraf, S. Lodha, U. Ganguly, “Epitaxialy defined (ED) FinFET: to reduce VT variability and enable multiple VT”, Device Research Conference, Pittsburgh, 2012.
74. V. Pavan Kishore, P. Paramahans, S. Sadana, U. Ganguly, S. Lodha, “Contact Resistance Reduction on Germanium through Metal Work Function Engineering”, MRS Spring Meeting, San Francisco, 2012.
75. P. Paramahans, P. Ray, S. Mane, P. Nyaupane, U. Ganguly, S. Lodha, “Ohmic contacts to n-type Germanium using a thin ZnO interfacial layer”, MRS Spring Meeting, San Francisco, 2012.
76. V. Pavan Kishore, P. Paramahans, S. Sadana, U. Ganguly, S. Lodha, “Novel Nanocrystal-based Contacts on n and p-type Germanium”,39th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI), Santa Fe, USA, January 2012.
77. P. Packan, S. Akbar, M. Armstrong, D. Bergstrom, M. Brazier, H. Deshpande, K. Dev, G. Ding, T. Ghani,O. Golonzka, W. Han, J. He, R. Heussner, R. James, J. Jopling, C. Kenyon, S.-H. Lee, M. Liu, S. Lodha, B. Mattis, A. Murthy, L. Neiberg, J. Neirynck, S. Pae, C. Parker, L. Pipes, J. Sebastian, J. Seiple, B. Sell, A. Sharma, S. Sivakumar, B. Song, A. St. Amour, k. Tone, T. Troeger, C. Weber, K. Zhang, Y. Luo, S. Natarajan, “High performance 32nm logic technology featuring 2nd generation high-k + metal gate transistors”, International Electron Devices Meeting, Baltimore, MD, 2009.
78. S. Natarajan, M. Armstrong; M. Bost., R. Brain, M. Brazier, C.-H. Chang, V. Chikarmane, M. Childs, H. Deshpande, K. Dev, G. Ding, T. Ghani, O. Golonzka, W. Han, J. He, R. Heussner, R. James, I. Jin, C. Kenyon, S. Klopcic, S.-H. Lee, M. Liu, S. Lodha, B. McFadden, A. Murthy, L. Neiberg, J. Neirynck, P. Packan, S. Pae, C. Parker, C. Pelto, L. Pipes, J. Sebastian, J. Seiple, B. Sell, S. Sivakumar, B. Song, K. Tone, T. Troeger, C. Weber, M. Yang, A. Yeoh, K. Zhang, “A 32nm logic technology featuring 2nd-generation high-k + metal-gate transistors, enhanced channel strain and 0.171um2 SRAM cell size in a 291Mb array”, International Electron Devices Meeting, San Francisco, CA, 2008.
79. P. Carpenter, A. Scott, S. Lodha, D. Janes, C. Risko, M. Ratner, “Substrate and Dipole Effects in Metal-Molecule-Semiconductor Heterostructures”, in Proceedings of the 6th IEEE conference on Nanotechnology, Cincinnati, 2006, vol. 1, pp. 104-107.
80. S. Lodha and D. B. Janes, “Fabrication and electrical characterization of Au/molecule/GaAs devices,” in Proceedings of the 4th IEEE conference on Nanotechnology, Munich, 2004, pp. 278-80.
81. D. B. Janes, S. Ghosh, S. Lodha, J. Choi and S. Bhattacharya, “Metal-Molecule-Metal and Metal-Molecule-Semiconductor Devices,” IEEE Nanoscale Devices and Systems Integration Conference, Miami, FL, Feb. 16-19, 2004.
82. S. Lodha and D. B. Janes, “Metal-molecule-semiconductor heterostructures for nanoelectronic applications,” in Proceedings of the International Semiconductor Device Research Symposium, Washington D.C., 2003, pp. 446-7.
83. J. Choi, D. Janes, H. Halimun, S. Lodha, et al., “Metal-Molecule-Metal Structures with Pre-Fabricated Contacts,” in Proceedings of the 4th International Conference on Intelligent Processing and Manufacturing of Materials, Sendai, Japan, May 18-23, 2003.
84. S. Lodha, J. Choi, S. Bhattacharya and D. B. Janes, “Metal-molecule-semiconductor heterostructures for nano-device applications,” in Proceedings of the 3rd IEEE conference on Nanotechnology, San Francisco, Aug. 12-14, 2003, pp. 311-314.
85. S. Bhattacharya, J. Choi, S. Lodha, D. B. Janes, A. Bonilla, K. Jeong and G. Lee, “Electronic Conduction in DNA attached to Gold Electrodes,” in Proceedings of the 3rd IEEE conference on Nanotechnology, San Francisco, Aug. 12-14, 2003, pp. 79-82.
86. J. Choi, D. B. Janes, S. Lodha, Y. Chen, R. Agarwal, R. P. Andres, S. Burns and C. P. Kubiak, “Conduction through molecule-gold cluster complexes and applications,” in Proceedings of the 3rd IEEE conference on Nanotechnology, San Francisco, Aug. 12-14, 2003, pp. 164-167.
87. D. B. Janes, S. Ghosh, J. Choi, S. Lodha and S. Bhattacharya, “Circuit characteristics of molecular electronic components,” in Proceedings of IEEE international conference on Application-Specific Systems, Architectures, and Processors, Netherlands, June 24-26, 2003, pp. 120-126.
88. S. Bhattacharya, D. B. Janes, G. Lee, J. Choi, S. Lodha, A. Bonilla, “Measuring Electronic Conduction in DNA Attached to Au-Electrodes,” 45th Electronics Materials Conference, Salt Lake City, USA, June 25-27, 2003.
89. J. Choi, D. B. Janes, S. Lodha, Y. Chen, H. Halimun, S. Ghosh, S. Burns, C. P. Kubiak, “Metal-Molecules-Metal Devices with Preformed Metal Contact Structures,” 45th Electronics Materials Conference, Salt Lake City, USA, June 25-27, 2003.
90. S. Lodha, N-P. Chen, D. B. Janes, “Interface Fermi Level Unpinning in Schottky Contacts on N-Type Gallium Arsenide with a Thin Low-Temperature-Grown Cap Layer,” 44th Electronics Materials Conference, Santa Barbara, USA, June 26-28, 2002.
91. S. Lodha, D. B. Janes, S. Howell, M. V. Batistuta, E. H. Chen, R. Reifenberger, “Experimental and Modeling Studies of Schottky Contacts to Low-Temperature-Grown GaAs in Ex-Situ Structures,” 43rd Electronics Materials Conference, Notre Dame, USA, June 27-29, 2001.
92. A.Topkar, S. Lodha and J. Vasi, “Ionizing radiation induced degradation of SiGe HBTs,” in Proceedings of the 10th Intl. Workshop on Physics of Semiconductor Devices, New Delhi, India, Dec. 1999, pp. 659-662.

1. S. Ghosh and S. Lodha, “Methods and systems for improving photoconductivity in a semiconductor photodiode”, Indian patent application number 202321011545, Feb 2023.
2. A. Tyagi, K. Ghosh, A Kottantharayil, S. Lodha, “Rear structured solar cells with carrier selective contacts for better efficiency and low cost solution in photovoltaics”, Indian patent application no. 201721004570, Feb 2018.

1. S. Lodha and D. Biswas, “Metal-interfacial layer-semiconductor with enhanced thermal staibility”, Indian patent number 510128, 19th February, 2024.
2. P. Paramahans, U. Ganguly, A. Nainani, M. Abraham, S. Lodha, “Metal-interfacial semiconductor layer-semiconductor (MISS) contact on a semiconductor substrate and method of fabricating thereof”, Indian patent No. 411104, November 9, 2022.
3. S. Mittal, S. Gupta, U. Ganguly, A. Nainani, S. Lodha, S. Ganguly, M. Abraham, E.-X. Ping, “Transistor design for improved performance and variability and method of fabrication”, Indian Patent No. 358169, February 10, 2021.
4. S. Lodha and U. Ganguly, “Low resistance metal-interfacial layer-semiconductor (MIS) contact and method of forming thereof”, Indian Patent No. 341586, July 15, 2020.
5. U. Ganguly, S. Lodha, P. Bafna, P. Karkare, P. Kumbhare, S. Srinivasan, “Selector device for Bipolar RRAM”, Indian Patent Number 323295, 21 October, 2019.
6. R. R. Arnepalli, P. Goradia, R. Visser, N. Ingle, M. Korolik, J. Biswas, S. Lodha, “Self-limiting atomic thermal etching systems and methods”, US Patent No. 10,043,684, Aug 07, 2018.
7. S. Lodha, P. Ranade, C. Auth, “Method of forming CMOS transistors with dual metal silicide formed through the contact openings and structures formed thereby”, US Patent No. 7,861,406, Jan 04, 2011.

• Poulomi Chakrabarty (PhD from IIT KGP, Post Doc from IISc)
• Siddhartha Suman (PhD from IIT Indore)
• Mamta Raturi (PhD from INST Mohali)

• Srilagna Sahoo (Prime Minister's Research Fellow)
• Atirah Zahoor (Prime Minister's Research Fellow)
• Pooja Sharma (UGC Fellow)
• .Prabhat Prajapati (UGC Fellow)
• Mayank Goyal (Prime Minister's Research Fellow)
• Sera Sen
• Shreyasi Das
• Mansi Patil

• Yeshwanth Parasubotu
• Prakash Das

• Bablu Mukherjee (JSPS Postdoctoral Fellow, National Institute for Materials Science (NIMS), Japan)
• Akanksha Singh (Senior Project Scientist at IIT Kanpur)
• Sandipta Das (Post Doc at Technion-Israel Institute of Technology, Israel)
• Dipankar Saha (Faculty at IIEST Shibpur)
• Debasree Burman
• Mounika Kotha
• Chandan Samanta (Post-doc at U Delaware)

• Sayantan Ghosh, Intel Corporation, Bengaluru, India
• Abin Varghese, Post-doctoral fellow, King's College, London, UK
• Himani Jawa, Post-doctoral fellow, Purdue University, USA
• Kartikey Thakar (Best thesis award 2023), Texas Instruments, India
• Dipankar Biswas, Micron Technology, India
• Naveen Kaushik, Micron Technology, USA
• Sachin Dev, Micron Technology, Hyderabad
• Piyush Bhatt, Applied Materials, India
• Prashanth Paramahans, Global Foundries,India
• Shraddha Kothari, Micron Technology, Hyderabad
• Chandan Joishi (Best thesis award 2020), Post doctoral fellow at Ohio State University, USA
• Natasha Goyal, Micron Technology, Hyderabad
• Astha Tyagi, Global Foundries, Bangalore
• Raju Mandapati (as co-supervisor), Global Foundries, India
• Sushant Mittal (as co-supervisor), Faculty at IIT BHU, India
• Dhirendra Vaidya (as co-supervisor), Micron Technology, Hyderabad
• Sangya Dutta (as co-supervisor), Max Linear, India
• Bhaskar Das (as co-supervisor), Max Linear, India
• Suvendu Nayak (as co-supervisor), Synopsys, Denmark

• Anagha Paul (EE) 2023, Texas Instruments, Bangalore
• Faizan Bari (EE) 2023, MediaTek, Bangalore
• Nitish Khandare (EE) 2022, Texas Instruments, Bangalore
• Prabhans Tiwari (EE) 2021, Texas Instruments, Bangalore
• Ravikiran Lengare (EE) 2021, Intel Corporation, Bangalore
• Abhik Bhattacharya (EE) 2021, AAI, Guwahati
• Sonam Angdue (EE) 2021, Punjab National Bank
• Sushovan Dhara (Physics) 2019, PhD, Ohio State University
• Dennis Joseph (EE) 2018, Intel
• Sukhwinder Singh (EE) 2017, Japan
• Shruti Karande (EE) 2016, KLA Tencor
• Ankur Nipane (EE) 2015, (Best thesis award 2016), TSMC, Columbia University
• Firdous Basheer (EE) 2014, TSMC
• Jitender Dahiya (EE) 2014,
• Ravi Kesh Mishra (EE) 2014, TSMC
• Prashant Swarnkar (EE) 2013, SanDisk
• Krishnakali Chaudhuri (EE) 2013, Purdue University
• V. Pavan Kishore (EE) 2012, TSMC
• Nitai Agarwal (EE) 2012, SONY, Japan
• Sunny Sadana (EE) 2011, Global Foundries, Singapore (with U. Ganguly)
• Shashank Gupta (EE) 2011, Stanford University (with U. Ganguly)

• Ankit Agrawal (EE, Dual Degree) 2016, Sysmex Corp., Japan
• Maneesh Meena (EE, Dual Degree) 2016
• Shyam Sunder Prasad (B. Tech) 2016
• Akash Saini (EE, Dual Degree) 2015, Times Internet
• Tejas Chaudhuri (EE, Dual Degree) 2015, Appsdaily Solutions Pvt. Ltd.
• Siddhant Khopkar (EE, Dual Degree) 2015, Wipro
• Manish Yadav (EE, Dual Degree) 2014
• Sanjesh Meena (EE, B. Tech) 2013, DRDO Labs
• Dev Kishan Chouhan (EE, B. Tech) 2013
• Ashwin Ganapathy (MEMS, Dual Degree) 2013 (with S. Mallick, MEMS), UC Davis
• Hardik Mehta (EE, Dual Degree) 2013, A. T. Kearney (with S. Ganguly)
• Sindhu Hari (EE, Dual Degree) 2013, Barclays (with S. Ganguly)

• Sivaramakrishnan, PhD candidate at IMEC, Belgium
• Dolar Khachariya, PhD candidate at NCSU, USA
• Jayeeta Sen, Applied Materials, India