M. A. Alam and S. Mahapatra, "A Comprehensive Model of PMOS NBTI Degradation", accepted, to appear in Microelectronics
Reliability,special issue on NBTI, 2004 (Invited paper)

S. Mahapatra, P. Bharath Kumar and M. A. Alam, "Investigation and Modeling of Interface and Bulk Trap Generation During Negative Bias Temperature Instability of p-MOSFETs", IEEE Trans. Electron Devices,v.51, p.1371, 2004.

K. Narasimhulu, Siva G.Narendra, and V. Ramgopal Rao, ~SEffect of Process Variations on Device and Circuit Parameters with LAC/DH
MOSFETs~T, proceedings of the 17 th IEEE International Conference on VLSI Design, January 7-9, 2004, Mumbai, India

Bhawna Tomar, V. Ramgopal Rao, "Sub-threshold Swingá Degradation due to Localized Charge Storage in SONOS Memories",Proceedings of 11 th IEEE International Symposium on Physical and Failure Analysis of Integrated Circuits, July 5-8, 2004

Neeraj Jha, V.Ramgopal Rao, "Understanding the NBTI Degradation in Halo- Doped Channel p-MOSFETs" Proceedings of the 11th IEEE International Symposium on Physical and Failure Analysis of Integrated Circuits, July 5-8, 2004 Hinshcu, Taiwan

A. S. Roy, J. Vasi, and M. B. Patil, "A new approach to model non quasi-static effects for MOSFET's, Part I: Large-signal analysis," IEEE Trans. Electron Devices, pp. 2993-2400, Dec. 2003.

A. S. Roy, J. Vasi, and M. B. Patil, "A new approach to model non quasi-static effects for MOSFET's, Part I: Small-signal analysis," IEEE Trans. Electron Devices, pp. 2401-2407, Dec. 2003.

B. J. Daniel, C. D. Parikh, and M. B. Patil, "Modelling of the CoolMOS transistor Part I: Device physics," IEEE Trans. Electron Devices. pp. 916-922, May 2002.

B. J. Daniel, C. D. Parikh, and M. B. Patil, "Modelling of the
CoolMOS transistor Part II: DC model and parameter extraction," IEEE Trans. Electron Devices.á pp. 922-929, May 2002.

D. Vinay Kumar, R. A. Thakker, M. B. Patil, and V. R. Rao, "Simulation study of non quasi static behaviour of MOS transistors," to be presented at the 5th International Conference on Modeling and Simulation of Microsystems: Workshop on compact modeling, San Juan, Peurto Rico, April 22, 2002.

M. B. Patil, "A public-domain program for mixed-signal simulation," to appear in IEEE Trans. Education.

D. Vinay Kumar, M. B. Patil, N. R. Mohapatra, V. R. Rao, B. Anand, and M. P. Desai, "A new look-up table circuit simulator," Proc. Chandigarh Symp. on Microelectronics, Panjab University, February, 2001.

M. B. Patil,"A new mixed-signal simulator," Proceedings of the National Seminar on VLSI: Systems, Design, and Technology, IIT Bombay, pp. 68-73, Dec. 2000.

P. Ravi Kumar, P. Sharma, and M. B. Patil, "Validation of small-signal model of a forward-biased p-n junction diode," Solid-St. Electron., vol. 44, pp. 1247-1253, 2000.

M. B. Patil, "Extension of the VR discretization scheme for velocity saturation," IEEE Trans. CAD, vol. 18, pp. 1508-1511, 1999.

S. Subbaraman, D. K. Sharma, J. Vasi and A. Das, "A Monte Carlo approach for incorporation of memory effect in switched gate bias experiments," J. Appl. Phys. 83, 3419 (1998).

M. B. Patil, "New discretization scheme for two-dimensional semiconductor device simulation on triangular grids," IEEE Trans. CAD 17, 1160 (1998).

Y. Sailaja and C. D. Parikh "A new non-quasi-static model for short-channel MOSFETs," Proc. of the 9th International Workshop on Physics of Semiconductor Devices, New Delhi (1997).

P. Damle and C. D. Parikh, "A new quasi-static charge model for short-channel MOSFETs," Proc. of the 9th International Workshop on Physics of Semiconductor Devices, New Delhi (1997).

C. V. Patel and C. D. Parikh, "Numerical simulations of vertical power MOSFETs with a view to more accurate analytical model development," Proc. of the 9th International Workshop on Physics of Semiconductor Devices, New Delhi (1997).

K. Sharma, S. Ekbote, P. Zaman, S. Subbaraman, A. Das and J. Vasi, "Device simulation for radiation and hot-carrier effects," Proc. of the 9th International Workshop on Physics of Semiconductor Devices, New Delhi (1997).

S. Subbaraman, D. K. Sharma, J. Vasi and A. Das, "HOTMOS: A 2-D MOS device simulator for hot-carrier effects," Proc. of the 9th International Workshop on Physics of Semiconductor Devices, New Delhi (1997).

M. B. Patil, "New approach for two-dimensional semiconductor device simulation on curvilinear grids," Solid-State Electron. 41, 789 (1997).

M. B. Patil, U. Ravaioli, and T. Kerkhoven, "Numerical comparison of some iterative schemes for semiconductor device simulation," presented at the Fifth International Workshop on Computational Electronics, N/otre Dame, Indiana, May 28-30 (1997).

Shanware, N. Godambe, J. Vasi, A. Chandorkar and A. Das, "Modelling and Characterization of Commercial CMOS IC's Under Radiation," Proc. of the Eighth International Workshop on Physics of Semiconductor Devices, New Delhi (1995).

P. Zaman, S.J. Patrikar, M. Goel, V. Bharadwaj, A. Das, D.K. Sharma and J. Vasi, "RADCAP : A MOS Capacitor Simulator for Radiation Effects," Proc. of the Eighth International Workshop on Physics of Semiconductor Devices, New Delhi (1995).

H.K. Chumber, P.P. Kalavade, C.D. Parikh and A. Das, "RADSPICE : A Circuit Simulator to Predict the Effects of Radiation," Proc. of the Eighth International Workshop on Physics of Semiconductor Devices, New Delhi (1995).

S. Subbaraman and A. Das, "Dispersive Transport in Oxide," Proc. of the Eighth International Workshop on Physics of Semiconductor Devices, New Delhi (1995).

M. B. Patil, Y. Ohkura, T. Toyabe, and S. Ihara, "On coupling the drift-diffusion and Monte Carlo models for MOSFET simulation," Solid-St. Electron. 38, 935 (1995).

S. Lathi and A. Das, "Seminumerical simulation of dispersive transport in the oxide of metal-oxide semiconductor devices, " J. Appl. Phys. 77, 3864 (1995).

N.Talwalkar, A.Das and J. Vasi, "Dispersive transport of carriers under non-uniform electric field," J. Appl. Phys. 76 (1995).

M. Deb and A.N. Chandorkar, "Theory of hopping transport of holes in amorphous SiO2," J. Appl. Phys. 77, 5248 (1995).

S. Ekbote, D. Tambe, P. Zaman, H.K. Dangat, M. Khare, P. Sinha, S. Rodd, N. Bhukhanwala, J. Vasi, D.K. Sharma and A. Das, "Simulation of Radiation Effects in MOSFETs," Proc. of the Eighth International Workshop on Physics of Semiconductor Devices, New Delhi (1995).

V. Vasudevan and J. Vasi, "A Two-dimensional Numerical Simulation of Oxide Charge Build-up in MOS Transistors Due to Radiation," IEEE Trans. Electron Devices 41, 383 (1994).

M. B. Patil, Y. Okuyama, Y. Ohkura, T. Toyabe, and S. Ihara, "Transmission matrix approach for electron transport in inversion layers," Solid-St. Electron. 37, 1359 (1994).

A.Phanse,D. Sharma, A. Mallik and J. Vasi, "Carrier Mobility Degradation in Metal-Oxide-Semiconductor Field Effect transistor Due to oxide charge," J. Appl. Phys.74, 757, (1993).

V. Vasudevan and J. Vasi, "A simulation of the multiple trapping model for CTRW transport," J. Appl. Phys. 74, 3224 (1993).

M. B. Patil, U. Ravaioli and 3. M. Hueschen, "Monte Carlo Simulation of Real-Space Transfer Transistors: Device Physics and Scaling Effects," IEEE Trans. Electron Devices 40, 480 (1993).

R.M. Patrikar, R. Lal and J. Vasi, "Physical models for electron trap generation in MOS oxides stressed at high fields," Proc. of the Seventh International Workshop on the Physics of Semiconductor Devices, New Delhi (1993).