




M. A. Alam and S. Mahapatra, "A
Comprehensive Model of PMOS NBTI Degradation", accepted, to
appear in Microelectronics
Reliability,special issue on NBTI, 2004 (Invited paper)
S. Mahapatra, P. Bharath Kumar and M. A. Alam, "Investigation
and Modeling of Interface and Bulk Trap Generation During
Negative Bias Temperature Instability of pMOSFETs", IEEE
Trans. Electron Devices,v.51, p.1371, 2004.
K. Narasimhulu, Siva G.Narendra, and V. Ramgopal Rao, ~SEffect
of Process Variations on Device and Circuit Parameters with
LAC/DH
MOSFETs~T, proceedings of the 17 th IEEE International
Conference on VLSI Design, January 79, 2004, Mumbai, India
Bhawna Tomar, V. Ramgopal Rao, "Subthreshold Swingá
Degradation due to Localized Charge Storage in SONOS
Memories",Proceedings of 11 th IEEE International Symposium on
Physical and Failure Analysis of Integrated Circuits, July
58, 2004
Neeraj Jha, V.Ramgopal Rao,
"Understanding the NBTI Degradation in Halo Doped Channel pMOSFETs"
Proceedings of the 11th IEEE International Symposium on
Physical and Failure Analysis of Integrated Circuits, July
58, 2004 Hinshcu, Taiwan
A. S. Roy, J. Vasi, and M. B. Patil, "A new approach to
model non quasistatic effects for MOSFET's, Part I:
Largesignal analysis," IEEE Trans. Electron Devices,
pp. 29932400, Dec. 2003.
A. S. Roy, J. Vasi, and M. B. Patil, "A new approach to
model non quasistatic effects for MOSFET's, Part I:
Smallsignal analysis," IEEE Trans. Electron Devices,
pp. 24012407, Dec. 2003.
B. J. Daniel, C. D. Parikh, and M. B. Patil, "Modelling of the
CoolMOS transistor Part I: Device physics," IEEE
Trans. Electron Devices. pp. 916922, May 2002.
B. J. Daniel, C. D. Parikh, and M. B. Patil, "Modelling of the
CoolMOS transistor Part II: DC model and parameter
extraction," IEEE Trans. Electron Devices.á pp.
922929, May 2002.
D. Vinay Kumar, R.
A. Thakker, M. B. Patil, and V. R. Rao, "Simulation study
of non quasi static behaviour of MOS transistors," to
be presented at the 5th International Conference on Modeling
and Simulation of Microsystems: Workshop on compact modeling,
San Juan, Peurto Rico, April 22, 2002.
M. B. Patil, "A publicdomain program
for mixedsignal simulation," to appear in IEEE Trans.
Education.
D. Vinay Kumar, M. B. Patil, N. R. Mohapatra,
V. R. Rao, B. Anand, and M. P. Desai, "A new lookup
table circuit simulator," Proc. Chandigarh Symp. on Microelectronics,
Panjab University, February, 2001.
M. B. Patil,"A new mixedsignal simulator,"
Proceedings of the National Seminar on VLSI: Systems, Design,
and Technology, IIT Bombay, pp. 6873, Dec. 2000.
P. Ravi Kumar, P. Sharma, and M. B. Patil,
"Validation of smallsignal model of a forwardbiased
pn junction diode," SolidSt. Electron., vol. 44, pp.
12471253, 2000.
M. B. Patil, "Extension of the VR discretization
scheme for velocity saturation," IEEE Trans. CAD, vol.
18, pp. 15081511, 1999.
S. Subbaraman, D. K. Sharma, J. Vasi and
A. Das, "A Monte Carlo approach for incorporation of
memory effect in switched gate bias experiments," J.
Appl. Phys. 83, 3419 (1998).
M. B. Patil, "New discretization scheme
for twodimensional semiconductor device simulation on triangular
grids," IEEE Trans. CAD 17, 1160 (1998).
Y. Sailaja and C. D. Parikh "A new
nonquasistatic model for shortchannel MOSFETs," Proc.
of the 9th International Workshop on Physics of Semiconductor
Devices, New Delhi (1997).
P. Damle and C. D. Parikh, "A new quasistatic
charge model for shortchannel MOSFETs," Proc. of the
9th International Workshop on Physics of Semiconductor Devices,
New Delhi (1997).
C. V. Patel and C. D. Parikh, "Numerical
simulations of vertical power MOSFETs with a view to more
accurate analytical model development," Proc. of the
9th International Workshop on Physics of Semiconductor Devices,
New Delhi (1997).
K. Sharma, S. Ekbote, P. Zaman, S. Subbaraman,
A. Das and J. Vasi, "Device simulation for radiation
and hotcarrier effects," Proc. of the 9th International
Workshop on Physics of Semiconductor Devices, New Delhi (1997).
S. Subbaraman, D. K. Sharma, J. Vasi and
A. Das, "HOTMOS: A 2D MOS device simulator for hotcarrier
effects," Proc. of the 9th International Workshop on
Physics of Semiconductor Devices, New Delhi (1997).
M. B. Patil, "New approach for twodimensional
semiconductor device simulation on curvilinear grids,"
SolidState Electron. 41, 789 (1997).
M. B. Patil, U. Ravaioli, and T. Kerkhoven,
"Numerical comparison of some iterative schemes for semiconductor
device simulation," presented at the Fifth International
Workshop on Computational Electronics, N/otre Dame, Indiana,
May 2830 (1997).
Shanware, N. Godambe, J. Vasi, A. Chandorkar
and A. Das, "Modelling and Characterization of Commercial
CMOS IC's Under Radiation," Proc. of the Eighth International
Workshop on Physics of Semiconductor Devices, New Delhi (1995).
P. Zaman, S.J. Patrikar, M. Goel, V. Bharadwaj,
A. Das, D.K. Sharma and J. Vasi, "RADCAP : A MOS Capacitor
Simulator for Radiation Effects," Proc. of the Eighth
International Workshop on Physics of Semiconductor Devices,
New Delhi (1995).
H.K. Chumber, P.P. Kalavade, C.D. Parikh
and A. Das, "RADSPICE : A Circuit Simulator to Predict
the Effects of Radiation," Proc. of the Eighth International
Workshop on Physics of Semiconductor Devices, New Delhi (1995).
S. Subbaraman and A. Das, "Dispersive
Transport in Oxide," Proc. of the Eighth International
Workshop on Physics of Semiconductor Devices, New Delhi (1995).
M. B. Patil, Y. Ohkura, T. Toyabe, and S.
Ihara, "On coupling the driftdiffusion and Monte Carlo
models for MOSFET simulation," SolidSt. Electron. 38,
935 (1995).
S. Lathi and A. Das, "Seminumerical
simulation of dispersive transport in the oxide of metaloxide
semiconductor devices, " J. Appl. Phys. 77, 3864 (1995).
N.Talwalkar, A.Das and J. Vasi, "Dispersive
transport of carriers under nonuniform electric field,"
J. Appl. Phys. 76 (1995).
M. Deb and A.N. Chandorkar, "Theory
of hopping transport of holes in amorphous SiO2," J.
Appl. Phys. 77, 5248 (1995).
S. Ekbote, D. Tambe, P. Zaman, H.K. Dangat,
M. Khare, P. Sinha, S. Rodd, N. Bhukhanwala, J. Vasi, D.K.
Sharma and A. Das, "Simulation of Radiation Effects in
MOSFETs," Proc. of the Eighth International Workshop
on Physics of Semiconductor Devices, New Delhi (1995).
V. Vasudevan and J. Vasi, "A Twodimensional
Numerical Simulation of Oxide Charge Buildup in MOS Transistors
Due to Radiation," IEEE Trans. Electron Devices 41, 383
(1994).
M. B. Patil, Y. Okuyama, Y. Ohkura, T. Toyabe,
and S. Ihara, "Transmission matrix approach for electron
transport in inversion layers," SolidSt. Electron. 37,
1359 (1994).
A.Phanse,D. Sharma, A. Mallik and J. Vasi,
"Carrier Mobility Degradation in MetalOxideSemiconductor
Field Effect transistor Due to oxide charge," J. Appl.
Phys.74, 757, (1993).
V. Vasudevan and J. Vasi, "A simulation
of the multiple trapping model for CTRW transport," J.
Appl. Phys. 74, 3224 (1993).
M. B. Patil, U. Ravaioli and 3. M. Hueschen,
"Monte Carlo Simulation of RealSpace Transfer Transistors:
Device Physics and Scaling Effects," IEEE Trans. Electron
Devices 40, 480 (1993).
R.M. Patrikar, R. Lal and J. Vasi, "Physical
models for electron trap generation in MOS oxides stressed
at high fields," Proc. of the Seventh International Workshop
on the Physics of Semiconductor Devices, New Delhi (1993). 

