Quantum dots: an overview of synthesis, properties, and applications

Kushagra Agarwal, Himanshu Rai and Sandip Mondal
Materials Research Express, Volume 10,Number 6(2023)
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Double roton-minima in bosonic fractional quantum Hall states

Moumita Indra, Deepak Jain, and Sandip Mondal
Physica Scripta (2023)
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All-Electric Nonassociative Learning in Nickel Oxide

Sandip Mondal, Z Zhang, , Kaushik Roy and S Ramanathan;
Advanced Intelligent Systems 2200069(2022)
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Switching Dynamics in Vanadium Dioxide-Based Stochastic Thermal Neurons

H Yu, ANMN Islam, Sandip Mondal, A Sengupta, S Ramanathan;
IEEE Trans. on Electron Devices 68, 3 (2022)
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Reconfigurable perovskite nickelate electronics for artificial intelligence

HT Zhang,...Sandip Mondal,...Shriram Ramanathan;
Science Vol 375, No 6580 (2022)
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Neuromorphic learning with Mott insulator NiO

Zhen Zhang*, Sandip Mondal*, ...Shriram Ramanathan
Z Zhang, S. Mondal contributed equally to this work
PNAS 118, 39 (2021)
Proceedings of National Academy of Sciences of USA
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Tunable Electronic Trap Energy in Sol-Gel Processed Dielectrics

Sandip Mondal and Arvind Kumar
IEEE Trans. on Electron Devices 68, 3 (2021)
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Gate-Controllable Electronic Trap Detection in Dielectrics

Sandip Mondal, Tathagata Paul, Arindam Ghosh and V. Venkataraman
IEEE Electron Device Letters 41, 5 (717 - 720) (2020)
-Editor Picks, Highlighted in Journal Cover
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Controllable surface contact resistance in solution-processed thin-film transistors due to dimension modification

Sandip Mondal
Semiconductor Science and Technology 35, 10LT02 (2020)
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Low temperature below 200°C solution processed tunable flash memory device without tunneling and blocking layer

Sandip Mondal and V. Venkataraman
Nature Communications 10, 2143(2019)
-Editor Choice, News Report
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All inorganic solution processed three terminal charge trapping memory device

Sandip Mondal and V. Venkataraman
Applied Physics Letters 114, 173502 (2019)
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Optical sensing of ultra-trace As3+ species using 2-mercaptoethanol capped CdTe Quantum Dots in aqueous medium

Gyanan Aman, Jayakrishna Khatei, Sandip Mondal, Arvind Kumar and Ramesh C Mallik
Materials Research Express 6, 12 (2019)
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DLTS Analysis and Interface Engineering of Solution Route Fabricated Zirconia Based MIS Devices Using Plasma Treatment

Arvind Kumar, Sandip Mondal and K.S.R. Koteswara Rao
Journal of Electronic Materials 47, 955–960 (2018)
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Tunable electron affinity with electronic band alignment of solution processed dielectric

Sandip Mondal and V. Venkataraman
Applied Physics Letters 111(4), 041602(1-4) (2017)
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Experimental evidences of charge transition levels in ZrO2 and at the Si: ZrO2 interface by deep level transient spectroscopy

Arvind Kumar, Sandip Mondal and K.S.R. Koteswara Rao
Applied Physics Letters 110(13), 132904(1-5) (2017)
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Tunable band alignment and dielectric constant of solution route fabricated Al/HfO2/Si gate stack for CMOS applications

Arvind Kumar, Sandip Mondal and K.S.R. Koteswara Rao
Journal of Applied Physics 121, 085301(1-8) (2017)
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Tunable dielectric properties of TiO2 thin film based MOS systems for application in microelectronics

Gyanan, Sandip Mondal and Arvind Kumar
Supperlattice Microst 100, 876-885 (2016)
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Structural, electrical, band alignment and charge trapping analysis of nitrogen-annealed Pt/HfO2/p-Si (100) MIS devices

Arvind Kumar, Sandip Mondal and K.S.R. Koteswara Rao
Applied Physics A 122(12),1027(1-8) (2016)
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Low temperature solution processed high-κ ZrO2 gate dielectrics for nanoelectonics

Arvind Kumar, Sandip Mondal and K.S.R. Koteswara Rao
Appl. Surf. Science 370,373-379 (2016)
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All Inorganic Spin-coated Nanoparticle Based Capacitive Memory Devices

Sandip Mondal and V. Venkataraman
IEEE Elec. Dev. Lett. 37(4),396-399 (2016)
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Critical investigation of high performance spin-coated high-k titania thin films based MOS capacitor

Arvind Kumar, Sandip Mondal and K.S.R. Koteswara Rao
J. Mat. Science: Mat. Elec. 27(5),5264-5270 (2016)
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High performance sol-gel spin-coated titanium dioxide dielectric based MOS structures

Arvind Kumar, Sandip Mondal and K.S.R. Koteswara Rao
Mat. Science in Semicon. Proce. 40,77-83 (2015)
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DLTS analysis of amphoteric interface defects in high-TiO2 MOS structures prepared by sol-gel spin-coatin

Arvind Kumar, Sandip Mondal and K.S.R. Koteswara Rao
AIP Advances 5(11),117122 (2015)
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