Probing the oxygen vacancy associated native defects in high-κ HfO2 using deep level transient spectroscopy

Arvind Kumar, Sandip Mondal and K. S. R. Koteswara Rao
Journal of Applied Physics, Published by AIP Publishing, J. Appl. Phys. 135, 045305 (2024)
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Electronic materials for solution-processed TFTs

Vishwas Acharya, Kushagra Agarwal and Sandip Mondal
Journal of Materials Research Express, Published by IOP Publishing Ltd (2023)
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Collective Excitation of Bosonic Quantum Hall State

Moumita Indra and Sandip Mondal
Journal of Low Temperature Physics, Springer Volume 214, pages 294-313 (2024)
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Spin-flip excitation and negative energy dispersion in rotating Bose atoms

Moumita Indra and Sandip Mondal
Journal of Physics: Condensed Matter, 36, 21, 215601(2024)
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Quantum dots: an overview of synthesis, properties, and applications

Kushagra Agarwal, Himanshu Rai and Sandip Mondal
Materials Research Express, Volume 10,Number 6(2023)
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Double roton-minima in bosonic fractional quantum Hall states

Moumita Indra, Deepak Jain, and Sandip Mondal
Physica Scripta (2023)
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All-Electric Nonassociative Learning in Nickel Oxide

Sandip Mondal, Z Zhang, , Kaushik Roy and S Ramanathan;
Advanced Intelligent Systems 2200069(2022)
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Switching Dynamics in Vanadium Dioxide-Based Stochastic Thermal Neurons

H Yu, ANMN Islam, Sandip Mondal, A Sengupta and S Ramanathan
IEEE Trans. on Electron Devices 68, 3 (2022)
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Reconfigurable perovskite nickelate electronics for artificial intelligence

HT Zhang,...Sandip Mondal,...Shriram Ramanathan;
Science Vol 375, No 6580 (2022)
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Neuromorphic learning with Mott insulator NiO

Zhen Zhang*, Sandip Mondal*, ...Shriram Ramanathan;
Z Zhang, S. Mondal contributed equally to this work
PNAS 118, 39 (2021)
Proceedings of National Academy of Sciences of USA
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Tunable Electronic Trap Energy in Sol-Gel Processed Dielectrics

Sandip Mondal and Arvind Kumar
IEEE Trans. on Electron Devices 68, 3 (2021)
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Gate-Controllable Electronic Trap Detection in Dielectrics

Sandip Mondal, Tathagata Paul, Arindam Ghosh and V. Venkataraman;
IEEE Electron Device Letters 41, 5 (717 - 720) (2020)
-Editor Picks, Highlighted in Journal Cover
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Controllable surface contact resistance in solution-processed thin-film transistors due to dimension modification

Sandip Mondal
Semiconductor Science and Technology 35, 10LT02 (2020)
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Low temperature below 200°C solution processed tunable flash memory device without tunneling and blocking layer

Sandip Mondal and V. Venkataraman;
Nature Communications 10, 2143(2019)
-Editor Choice, News Report
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All inorganic solution processed three terminal charge trapping memory device

Sandip Mondal and V. Venkataraman;
Applied Physics Letters 114, 173502 (2019)
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Optical sensing of ultra-trace As3+ species using 2-mercaptoethanol capped CdTe Quantum Dots in aqueous medium

Gyanan Aman, Jayakrishna Khatei, Sandip Mondal, Arvind Kumar and Ramesh C Mallik;
Materials Research Express 6, 12 (2019)
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DLTS Analysis and Interface Engineering of Solution Route Fabricated Zirconia Based MIS Devices Using Plasma Treatment

Arvind Kumar, Sandip Mondal and K.S.R. Koteswara Rao;
Journal of Electronic Materials 47, 955–960 (2018)
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Tunable electron affinity with electronic band alignment of solution processed dielectric

Sandip Mondal and V. Venkataraman;
Applied Physics Letters 111(4), 041602(1-4) (2017)
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Experimental evidences of charge transition levels in ZrO2 and at the Si: ZrO2 interface by deep level transient spectroscopy

Arvind Kumar, Sandip Mondal and K.S.R. Koteswara Rao;
Applied Physics Letters 110(13), 132904(1-5) (2017)
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Tunable band alignment and dielectric constant of solution route fabricated Al/HfO2/Si gate stack for CMOS applications

Arvind Kumar, Sandip Mondal and K.S.R. Koteswara Rao;
Journal of Applied Physics 121, 085301(1-8) (2017)
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Tunable dielectric properties of TiO2 thin film based MOS systems for application in microelectronics

Gyanan, Sandip Mondal and Arvind Kumar;
Supperlattice Microst 100, 876-885 (2016)
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Structural, electrical, band alignment and charge trapping analysis of nitrogen-annealed Pt/HfO2/p-Si (100) MIS devices

Arvind Kumar, Sandip Mondal, and K.S.R. Koteswara Rao;
Applied Physics A 122(12),1027(1-8) (2016)
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Low temperature solution processed high-κ ZrO2 gate dielectrics for nanoelectonics

Arvind Kumar, Sandip Mondal and K.S.R. Koteswara Rao;
Appl. Surf. Science 370,373-379 (2016)
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All Inorganic Spin-coated Nanoparticle Based Capacitive Memory Devices

Sandip Mondal and V. Venkataraman;
IEEE Elec. Dev. Lett. 37(4),396-399 (2016)
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Critical investigation of high performance spin-coated high-k titania thin films based MOS capacitor

Arvind Kumar, Sandip Mondal and K.S.R. Koteswara Rao;
J. Mat. Science: Mat. Elec. 27(5),5264-5270 (2016)
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High performance sol-gel spin-coated titanium dioxide dielectric based MOS structures

Arvind Kumar, Sandip Mondal and K.S.R. Koteswara Rao;
Mat. Science in Semicon. Proce. 40,77-83 (2015)
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DLTS analysis of amphoteric interface defects in high-TiO2 MOS structures prepared by sol-gel spin-coatin

Arvind Kumar, Sandip Mondal, K.S.R. Koteswara Rao;
AIP Advances 5(11),117122 (2015)
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