Department of Electrical Engineering, IIT Bombay
Journal Publications
The papers by Prof. Chakrabarti in the area of compound semiconductor optoelectronic materials and devices have received about 3900 citations till date with a h-factor of 27 (as indexed in GOOGLE SCHOLAR)
2022
230. Sudheendra Prabhu,Sushil Kumar Pandey,Subhananda Chakrabarti, "Innovative Structural Engineering of Sustainable and Environment Friendly CZTS Solar Cell for Over 20% Conversion Efficiency", Int J Energy Res. 2022; 1–9, https://doi.org/10.1002/er.8232.
229. Raveesh Gourishetty; Saranya Reddy Shriram; Debi Prasad Panda; Subhananda Chakrabarti, "Analytical Model and Experimental Analysis to Estimate the Interdiffusion and Optoelectronic Properties of Coupled InAs Quantum Dots Post Rapid Thermal Processing", IEEE Transactions on Electron Devices ( Volume: 69, Issue: 7, July 2022), https://doi.org/10.1109/TED.2022.3175683.
228. Dalal, Avijit;Mishra, Madhuri;Chakrabarti, Subhananda;Gupta, Rajeev Kumar;Mondal, Aniruddha, "Characteristics of Mg doped TiO2 thin film based deep UV photodetector ", Vacuum, Volume 201, July 2022, Article number 111115, https://doi.org/10.1016/j.vacuum.2022.111115 .
227. Saha Rajib; Dalapati, Goutam Kumar; Chakrabarti, Subhananda; Karmakar, Anupam; Chattopadhyay, Sanatan, "Yttrium (Y) doped ZnO nanowire/p-Si heterojunction devices for efficient self-powered UV-sensing applications", Vacuum, Volume 202, August 2022, Article number 111214, https://doi.org/10.1016/j.vacuum.2022.111214.
226. Shriram, Saranya Reddy; Gourishetty, Raveesh; Chakrabarti, Subhananda, "Quaternary – alloyed capping for strain and band engineering in InAs sub – monolayer quantum dots", Micro and Nanostructures, Volume 165, May 2022, Article number 207189, https://doi.org/10.1016/j.micrna.2022.207189.
225. Shriram, Saranya Reddy;Gourishetty, Raveesh;Panda, Debiprasad; Das, Debabrata; Dongre, Suryansh; Saha, Jhuma; Chakrabarti, S., "Subsiding Strain-induced In-Ga Intermixing in InAs/InxGa1−xAs Sub-Monolayer Quantum Dots for Room Temperature Photodetectors" , Infrared Physics & Technology, Volume 121, March 2022, 104047, https://doi.org/10.1016/j.infrared.2022.104047 .
224. N. Pandey and S. Chakrabarti, "Ab-Initio Computational Details with Facile High-Temperature Synthesis of Pure and Alloyed CsPbI3 with Inherent Stability Analysis for Optoelectronic Applications", IEEE Journal of Photovoltaics, Volume: 12, Issue: 2, March 2022, Page(s): 625 - 633, https://doi.org/10.1109/JPHOTOV.2022.3144098, Impact Factor: 3.887
2021
223. R. Gourishetty et al, "Effects of In, Sb and N alloyed capping on the electronic band structures of vertically coupled InAs SK-SML quantum dot system," IEEE Transactions in Nanotechnology, Vol. 20, pp.922, 2021, IF: 2.57
222. J. Murillo, D. Panda, S. Chakrabarti, L. Griego, V. S. N. Chava, S. T. Sreenivasan, C. V. Ramana, and S. Fortier, "Room temperature synthesis of UO2+x nanocrystals and thin films via hydrolysis of uranium(iv) complexes", https://doi.org/10.1039/D1QI01248G, Inorg. Chem. Front., 2022,9, 678-685, I.F. 5.165.
221. Lavi Tyagi, Mahesh Kumar, Sritoma Paul, Shubham Mondal, Nagendra S. Chauhan, Saurabh Saini, Nikita Vashistha, and Subhananda Chakrabarti, "Tuning the Plasmonic Response of AuGe Nanoparticles on GaAs Substrates: Implications for Photodetectors", https://doi.org/10.1021/acsanm.1c02002, ACS Appl. Nano Mater. 2021, 4, 9, 9566–9583, IF: 5.097.
220. S. Prabhu, S. K. Pandey and S. Chakrabarti, "Theoretical investigations of band alignments and SnSe BSF layer for low-cost, non-toxic, high-efficiency CZTSSe solar cell," Solar Energy, Volume 226, 15 September 2021, Pages 288-296; https://doi.org/10.1016/j.solener.2021.08.050, I.F. 5.742.
219. R. Gourishetty, D. Panda, S. Dongre, S. A. Gazi and S. Chakrabarti, "Evaluation of In(Ga)As capping in a multilayer coupled InAs quantum dot system: Growth Strategy involving the same overgrowth percentage," Journal of Luminescence; Volume 239, November 2021, 118340; https://doi.org/10.1016/j.jlumin.2021.118340, I.F. 3.28.
218. S. Choudhary, D. Das, J. Saha, D. Panda and S. Chakrabarti, "Hybrid stranski-krastanov/submonolayer quantum dot heterostructure with type-II band alignment: an efficient way of near infrared photovoltaic energy conversion," J. of Luminescence (accepted), I.F. 3.280.
217. P. Murkute, H. Ghadi, S. Sushama, S. Chakrabarti, "Realization of high-quality RF sputtered ZnMgO (x=15%) thin films by post-growth annealing treatment" Superlattice and Microstructures (accepted)
216. S. Sushama, P. Murkute, H. Ghadi, S. K. Pandey and S. Chakrabarti, "Enhancement in Structural, Elemental and Optical Properties of Boron-Phosphorus Co-doped ZnO Thin Films by High-Temperature Annealing", Journal of Luminescence (accepted)
215.S. Mondal,C. Ghosh, S.M.M.Dhar Dwivedi, A. Ghosh, Sushama, S. Chakrabarti and A. Mondal, "An experimental and theoretical understanding of a UV photodetector based on Ag nanoparticles decorated Er-doped TiO2 thin film", Ceramics International, Volume 47, Issue 10, Part B, 15 May 2021, Pages 14879-14891, DOI: https://doi.org/10.1016/j.ceramint.2020.07.311
214. N. Pandey, "Tuning the Morphological, Photophysical, and Electronic Properties of CsPb(Cl/Br)3 by impurity doping for optoelectronic applications: A theoretical and experimental study," IEEE Journal of Photovoltaics, I.F. 3.736, DOI: 10.1109/JPHOTOV.2021.3050261
213.. M. Mishra, S. Sushama, S. K. Pandey and S. Chakrabarti, "Phosphorus doping of ZnO using spin‐on dopant process: A better choice than costly and destructive ion-implantation technique", Journal of Luminescence, 2021. (Accepted) I.F. 3.280
212. Shriram, S.R., Kumar, R., Panda, D., Saha, J., Tongbram, B., Mantri, M.R., Gazi, S.A., Mandal, A. and Chakrabarti, S., “Impact of Strain – Reducing or Capping Layer in a Multi – Stack InAs/InxGa(1-x)As Sub – Monolayer Quantum Dot Heterostructures”, Optical Materials, (Accepted), I.F. 2.779
211. R. Gourshetty, D.P. Panda, S. Dongre, J. Saha, S. A. Gazi, S. Chakrabarti, “Hybrid strain-coupled multilayer SK and SML InAs/GaAs quantum dot heterostructure: Enabling higher absorptivity and strain minimization for enhanced optical and structural characteristics,” Journal of Luminescence (accepted), I.F. 3.280
2020
210. Sushama, P. Murkute, H. Ghadi, S. K. Pandey and S. Chakrabarti, "Detection of acceptor-bound exciton peak at 300 K in Boron-Phosphorus co-doped ZnMgO thin films for room-temperature optoelectronics applications," Optical Materials (Accepted), I.F. 2.779
209. V. P. Deviprasad, D. Panda, S. Paul, S. Mondal, J. Saha, D. Das, B. Tongbram, K.Das Gupta and S. Chakrabarti, Room Temperature Operation and low dark current of In0.15Ga0.85As/InAs/In0.15Ga0.85As dot-in-well Short-wave Infrared Photodetector: Experimental and Theoretical correlation, Superllatices and Microstructures (accepted), I.F. 2.120
208. R. Kumar, J. Saha, D. Panda, R. Kumar, S. A. Gazi, R. Gourishetty and S. Chakrabarti, "Ameliorating the optical and structural properties of InAs Quantum Dot heterostructures through digital alloy capping materials: Theory and Experiment" , Optical Materials (accepted), I.F. 2.779.
207. Md J. Alam, P. Murkute; S. Sushama, H. Ghadi S. Mondal, S. Paul, D. Das, S. K. Pandey and Subhananda Chakrabarti, "Room-temperature ultraviolet-ozone annealing of ZnO and ZnMgO nanorods to attain enhanced optical properties", Journal of Materials Science: Materials in Electronics (accepted), I.F. 2.22
206. A. A.Shedge, S. V. Pansare,S. R. Khairkar, S.Y.Chhatre, S.Chakrabarti, A. A.Nagarkar, A. V. Pansare, V. R.Patil, "Nanocomposite of functional silver metal containing curcumin biomolecule model systems: Protein BSA bioavailability," Journal of Inorganic Biochemistry, https://doi.org/10.1016/j.jinorgbio.2020.111210 , IF 3.348
205. N. Vashistha, M. Kumar, R. K. Singh, D. Panda, L. Tyagi and S. Chakrabarti, “A comprehensive study of ultrafast carrier dynamics of LT-GaAs: above and below bandgap regions,” Physica B: Physics of Condensed Matter (accepted), I.F. 1.880
204. Samesta, J. Saha, B. Tongbram, D. Panda, D. Das and S. Chakrabarti, “Tuning the structural and optical characteristics of heterogeneously coupled InAs Submonolayer (SML) quantum dots grown on InAs Stransaki-Krastanov (SK) quantum dots,” Optical Materials (accepted), I.F. 2.779
203. S. Mondal, C. Ghosh, S. M. D. Dwivedi, A Ghosh, S. Sushama, S. Chakrabarti and A. Mondal, ” An experimental and theoretical understanding of a UV Photodetector based on Ag nanoparticles decorated Er-doped TiO2 thin film,“ Ceramic International (Accepted), I.F. 3.830
202. Samesta, J. Saha, B. Tongbram, D. Panda, D. Das and Subhananda Chakrabarti, “A comprehensive analysis of strain profile in the heterogeneously coupled Stranski-Krastanov (SK) on Submonolayer (SML) quantum dot heterostructures,” Journal of Alloys and Compounds (accepted), I.F. 4.650
201. S. Sriram, D. Panda, J. Saha and S. Chakrabarti, “Study on inter band and inter sub-band optical transitions with varying InAs/InGaAs sub-monolayer quantum dot heterostructure stacks grown by molecular beam epitaxy”, IEEE transactions in Nanotechnology (accepted), I.F. 2.857
200. S. Das, J. Saha, Saranya and S. Chakrabarti, “Influence of Sb accumulation on the inter-band and inter-subband transitions of InAs/GaAs1-x Sbx sub-mono layer (SML) quantum dot heterostructures,” Superlattices and Microstructures (accepted), I.F. 2.385
199. R. Kumar, D. Panda, J. Saha, B. Tongbram, D. Das, R. Kumar and S. Chakrabarti, “Monolithic growth of GaAs/Al0.3Ga0.7As Multiple Quantum Well structure on Ge substrate with low defects: Theoretical and Experimental Correlation of the structural and optical properties”, Journal of Physics D: Applied Physics, (accepted) I.F. 3.169
198. S. Dongre, S. Paul, S. Mondal, D. Panda, S. R. Shriram, M. R. Mantri, S. A. Gazi, D. Das, R. Kumar, B. Tongbram and S. Chakrabarti, “Optimization of Vertical Strain Coupling in InAs/GaAs p-i-p Quantum Dot Infrared Photodetectors with Applied Growth Strategy,” Journal of Luminescence (accepted), I.F. 2.961
197. N. Pandey and S. Chakrabarti, “Understanding the effect of Mn doping in CsPbBr3 using ab-initio method with experimental validation,” IEEE Journal of Photovoltaics (accepted), I.F. 3.398
196. M. R. Mantri, D. Panda, D. Das, S. Mondal, S. Paul3, S. A. Gazi, R. Kumar, S. Dongre, A. V. Pansare and S. Chakrabarti, “Improved Carrier Transfer in Vertically Coupled Surface and Buried InAs Stranski-Krastanov Quantum Dot system via Ex-situ Surface State Passivation,” Journal of Luminescence (accepted), I.F. 3.28
195. S. R. Khairkar, A. V. Pansare, A. A. Shedge, S. Y. Chatre, A. K. Suresh, S. Chakrabarti, V. R. Patil and A. Nagarkar, “Hydrophobic Interpenetrating Polyamide-PDMS Membranes for Desalination, Pesticides Removal and Enhanced Chlorine Tolerance,” Chemosphere (accepted), I.F. 5.108
194. A. Pansare; S. Chhatre; S. Khairkar; J. Bell; M. Barbezat; S. Chakrabarti and A. Nagarkar, ”“Shape-Coding”: Morphology Based Information System for Polymers and Composites,“ ACS Applied Materials and Interfaces (accepted), I.F. 8.758
193. R. Kumar, J. Saha, and S. Chakrabarti,”Impact of Digital Alloy Capping Layers on Bilayer Self-Assembled InAs Quantum Dot Heterostructures“, IEEE transactions in Nanotechnology (accepted), https://doi.org/10.1109/TNANO.2020.2993690, I.F. 2.857
192. Md Jawaid Alam; P. Murkute; S. Sushama; H. Ghadi; S. Paul; S. Mondal; and S. Chakrabarti, “Improving optical properties and controlling defect-bound states in ZnMgO thin films through ultraviolet-ozone annealing,” Thin Solid Films (accepted), I.F. ~2
191. S. Dongre, S. Paul, S. Mondal, R. Kumar, D. Panda, S. Gazi, D. Das, R. Kumar, S. Shriram, M. Mantri, B. Tongbram and S. Chakrabarti,”In-situ Tailoring of Vertically Coupled InAs p-i-p Quantum-dot Infrared Photodetectors: Towards Homogeneous Dot Size Distribution and Minimization of In-Ga Intermixing“, ACS Applied Electronic Material, https://doi.org/10.1021/acsaelm.0c00054,
190. R. Kumar, D. Panda, D. Das, A. Chatterjee, B. Tongbram, J. Saha, S. Upadhyay, R. Kumar, S. K. Pal and S. Chakrabarti, “Realization of high-quality InGaAs/GaAs Quantum Dot growth on Ge substrate and Improvement of Optical property through Ex-situ Ion Implantation,” Journal of Luminescence,https://doi.org/10.1016/j.jlumin.2020.117208, I.F. 3.28
189. I. Mal, D. P. Panda, S. Chakrabarti and D. P. Samajdar, “An Analytical Approach to study Annealing Induced Interdiffusion of In and Ga for Truncated Pyramidal InAs/GaAs Quantum Dots”, IEEE Transactions on Nanotechnology, https://doi.org/10.1109/TNANO.2020.2975934, I.F. 2.857
188. M. Biswas, R. Kumar, A. Chatterjee, Y. Wud, Z. Mi, P. Bhattacharya, S. K. Pal, S. Chakrabarti, “Effects of Rapid Thermal Annealing in InGaN/GaN Quantum Disk-in-GaN Nanowire Arrays,” Journal of Luminescence, https://doi.org/10.1016/j.jlumin.2020.117123, I.F. 3.28
187. T. Hidouri1, M. Biswas, I. Mal, S. Nasr, S. Chakrabarti, D. P. Samajdar and Faouzi Saidi, “Engineering of carrier localization in BGaAs SQW for novel intermediate band solar cells: thermal annealing effect,” Solar Energy, https://doi.org/10.1016/j.solener.2020.02.032, I.F. 4.674
186. B. Tongbram, J. Saha, S. Sengupta, and S. Chakrabarti, “Metamorphosis of Self-Assembled InAs Quantum Dot through Variation of Growth Rates,” Journal of Alloys and Compounds, https://doi.org/10.1016/j.jallcom.2020.153870, I.F. 4.650
185. H. Ghadi, P. Murkute, S. Patil and S. Chakrabarti, “Zinc magnesium oxide based nanosensors for high-precision pH measurement,” IEEE Sensors Journal, https://doi.org/10.1109/JSEN.2020.2964995, I.F. 3.076
2019
185. D. Das et al, “Vertically coupled hybrid InAs sub-monolayer on InAs Stranski–Krastanov quantum dot heterostructure: towards next generation broadband IR detection”, IEEE Transactions on Nanotechnology, https://doi.org/10.1109/TNANO.2019.2958930, I.F. 2.857
184. Md Jawaid Alam, P. Murkute, H. Ghadi, S. Sushama, S. M. M. D. Dwivedi, A. Ghosh, C. Ghosh, A. Mondal3, S. Paul, S. Mondal, S. Chakrabarti, “Enhancing responsivity and detectivity in Broadband UV–VIS photodetector by ex-situ UV–ozone annealing technique,” Superlattice and Microstructures, https://doi.org/10.1016/j.spmi.2019.106333, I.F. 2.385
183. N. Pandey, A. Kumar and S. Chakrabarti, “Tunnelling Magnetoresistance and spin filtration effect in functionalized graphene sheet with CrO2 as electrode: An ab-initio study,” Journal of Magnetism and Magnetic Materials, https://doi.org/10.1016/j.jmmm.2019.166073, I.F. 2.683
182. E. K. W. Tan, P. K. Shrestha, A. V. Pansare, S. Chakrabarti, S. Li, D. Chu, C. R. Lowe, and Amit A. Nagarkar, “Density Modulation of Embedded Nanoparticles via Spatial, Temporal, and Chemical Control Elements,” Advanced Materials, https://doi.org/10.1002/adma.201901802, I.F. 25.809
181. “Detailed investigation of photoluminescence, structural, and elemental properties of ZnO thin films under various annealing ambient,” Superlattices and Microstructures (accepted), https://doi.org/10.1016/j.spmi.2019.106310, I.F. 2.385
180. N. Pandey, A. Kumar and S. Chakrabarti, “First principle study of temperature- dependent spin transport in VSe2 monolayer,” Applied Surface Science, https://doi.org/10.1016/j.apsusc.2019.144411, I.F. 5.155
179. V. P. Deviprasad, S. Paul, S. Mondal, D. Das, D. Panda, and S. Chakrabarti,”Incorporation of Quaternary (In0.22Al0.22Ga0.56As) Capping in p-i-p QDIPs for Efficient Minimization of Hole-Assisted Dark Current,“ Infrared Physics and Technology (accepted), I.F. 2.313
178. J. Saha, D. Das, D. Panda, B. Tongbram, A. Chatterjee, B. Liang, K. Das Gupta, S. K. Pal and S. Chakrabarti, “Broad tunability of emission wavelength by strain coupled InAs/GaAs1-xSbx quantum dot heterostructures” Journal of Applied Physics, https://doi.org/10.1063/1.5108949, I.F. 2.328
177. N. Pandey, A. Kumar and S. Chakrabarti, “First principle study of temperature dependent magneto resistance and spin filtration effect in WS2 nanoribbon” ACS Applied Materials and Interfaces; Vol.11, No. 42, pp. 39248-39253, 2019, https://doi.org/10.1021/acsami.9b10618 I.F. 8.758
176. J. Saha et al, “Enhancing the Performance of Heterogeneously Coupled InAs Stranski-Krastanov on Submonolayer Quantum Dot Heterostructures,” Superlattices and Microstructures, https://doi.org/10.1016/j.spmi.2019.106260 I.F. 2.385
175. S. Mukherjee, S. Mukherjee, A. Pradhan, T. Maitra, S. Sengupta, S. Chakrabarti, A. Nayak, S. Bhunia,”Carrier transport and recombination dynamics of InAs/GaAs sub-monolayer quantum dot near infrared photodetector“, J Phys. D, I.F. 2.829
174. N. Pandey, A. Kumar, and S. Chakrabarti, “Investigation of Structural, Electronic, and Optical Properties of Mn-doped CsPbCl3: Theory and Experiment,” RSC Advances (accepted), I.F. 3.049
173. D. Das et al, “Vertically coupled hybrid InAs sub-monolayer on InAs Stranski–Krastanov quantum dot heterostructure: towards next generation broadband IR detection”, IEEE Transactions on Nanotechnology (accepted), I.F. 2.292
172. S. M. M. D. Dwivedi, A. Dalal, A. Ghosh, P. Murkute, H. Ghadi, C. Ghosh, S. Chakrabarti, S. Bhunia and A. Mondal, “InN nanowires based Near-Infrared broadband optical detector,” IEEE Photonics Technology Letters, https://doi.org/10.1109/LPT.2019.2936272, I.F. 2.553
171. V. P. Deviprasad, D. Das, D. Panda, H. M. Rawool, V. Chavan, B. Tongbram, J. Patwari, and S. Chakrabarti,”Spatial Optimization of Modulation Doping in P-I-P QDIPs: Towards Achieving Higher Operating Temperature“, IEEE Transactions in Nanotechnology, https://doi.org/10.1109/TNANO.2019.2937093, I.F. 2.292
170. D. Panda, J. Saha, D. Das, S. Singh, H. Rawool, and S. Chakrabarti.”Theoretical Correlation and Effect of annealing on the Photoresponse of Vertically Strain-coupled In0.5Ga0.5As/GaAs Quantum Dot Heterostructures“, Journal of Applied Physics, https://doi.org/10.1063/1.5113528, I.F. 2.328
169. S. Mondal, S. Paul, Md Jawaid Alam, S Sushama and S. Chakrabartib*”Effects of carrier confinement in MgZnO/CdZnO thin-film transistors: towards next generation display technologies“, Superlattices and MIcrostructures, https://doi.org/10.1016/j.spmi.2019.106220, I.F. 2.385
168. A. Chatterjee, D. Panda, J. Patwari, B. Tongbram, S. Chakrabarti, S. K. Pal, “Strain Relaxation in InAs Quantum Dots through Capping Layer Variation and Its Impact on The Ultrafast Carrier Dynamics”, Semiconductor Science and Technology (accepted), I.F. 2.654
167. S. Mukherjee, A. Pradhan, S. Mukherjee, T. Maitra, S. Sengupta, S. Chakrabarti, A. Nayak, S. Bhunia,”Carrier escape mechanism in laterally correlated InAs sub-monolayer quantum dots using temperature dependent photoluminescence,“ Journal of Luminescence (accepted), I.F. 2.732
166. V. P. Deviprasad, H. J. Ghadi, D. Das, D. Panda, H. M. Rawool, V. Chavan, B. Tongbram, J. Patwari, S. K. Pal and S. Chakrabarti, “High performance short wave infrared photodetector using p-i-p quantum dots (InAs/GaAs) validated with theoretically simulated model,” Journal of alloys and compounds (accepted), I.F. 3.779
165. D. Panda, A. Chatterjee, J. Saha, D. Das, S. M. Singh, S. K. Pal and S. Chakrabarti, “Enhanced performance of In(Ga)As QD based optoelectronic devices through improved interface quality between QD and matrix material”, Physica Status Solidi B: Basic Solid State Physics, https://doi.org/10.1002/pssb.201900138, I.F. 1.454
164. A. Ghosh, P. Murkute, R. Lahiri, S. Chakrabarti, K. K. Chattopadhyay, A. Mondal,”GLAD synthesised Erbium doped In2O3 Nano-columns for UV detection“, Journal of Materials Science: Materials in Electronics (accepted), I.F. 2.195
163. A. Chatterjee, D. Das, J. Patwari, B. Tongbram, D. Panda, S. Chakrabarti, S. K. Pal, “Ultrafast Electronic Spectroscopy on the Coupling of Stranski-Krastanov and Submonolayer Quantum Dots for Potential Application in Near Infrared Light Harvesting.” Materials Research Express (accepted), I.F. 1.51
162. J. Patwari, A. Chatterjee, H. Ghadi, H. Sharma, S. Chakrabarti, and S. K. Pal, “In Situ Measurement of Temperature Dependent Picosecond Resolved Carrier Dynamics in Near Infrared (NIR) Sensitive Device on Action,” Review of Scientific Instruments (accepted), I.F. 1.428
161. A. V. Pansare, A. A. Shedge, S. Y. Chhatre, D. Das, P. Murkute, V. R. Patil and S. Chakrabarti, “AgQDs Employing Black Box Synthetic strategy: Photocatalytic and Biological Behavior,” Journal of Luminescence(accepted), I.F. 2.732
160. S. Sushama, P. Murkute, H. Ghadi and S. Chakrabarti, “Enhancing acceptor based optical behavior in Phosphorus-Doped ZnO Thin Films using Boron as compensating species”, ACS Applied Electronic Materials, https://doi.org/10.1021/acsaelm.8b00082.
159. J. Saha, D. Panda, B. Tongbram, D. Das, V. Chavan, and S. Chakrabarti*, “Higher performance optoelectronic devices with In0.21Al0.21Ga0.58As/In0.15Ga0.85As capping of III-V Quantum Dots,” Journal of Luminescence, https://doi.org/10.1016/j.jlumin.2019.02.022, I.F. 2.732
158. S. Mukherjee, A. Pradhan, S. Mukherjee, T. Maitra, S. Sengupta, B. Satpati, S. Chakrabarti, A. Nayak and S. Bhunia,”Tuning of near Infrared Excitonic Emission from Sub-monolayer InAs Quantum Dots by Controlling Coverage Fraction,“ Journal of Luminescence, https://doi.org/10.1016/j.jlumin.2019.01.063, I.F. 2.732
157. J. Saha, D. P. Panda and S. Chakrabarti, “Impact of Sb Composition on Strain Profile of GaAs1-xSbx Capped InAs Quantum Dots”, IEEE Transactions in Nanotechnology (accepted), https://doi.org/10.1109/TNANO.2019.2897709, I.F. 2.857
2018
156. J. Patwari, S. Shyamal, T. Khan, H. Ghadi, C. Bhattacharya, S. Chakrabarti and S. K. Pal, “Inversion of activity in DSSC for TiO2 and ZnO photo-anodes depending on the choice of sensitizer and carrier dynamics,” Journal of Luminescence, https://doi.org/10.1016/j.jlumin.2018.11.012, I.F. 2.732
155. D. P. Panda, A. Balgarkashi, S. M. Singh, S. Shetty, H. Rawool, and S. Chakrabarti, In”In0.5Ga0.5As Bilayer Quantum Dot Heterostructure for mid-infrared photodetection,“ Infrared Physics and Technology (accepted), https://doi.org/10.1016/j.infrared.2018.09.028 I.F. 1.851
154. I.Mal, D.P. Panda, B. Tongbram, D.P. Samajdar and S. Chakrabarti “Analytical Modeling of Temperature and Power Dependent Photoluminescence (PL) Spectra of InAs/GaAs Quantum Dots,” Journal of Applied Physics (accepted), https://doi.org/10.1063/1.5047026, I.F. 2.176
153. P. Murkute, S. Sushama, H. Ghadi, S. Saha and S. Chakrabarti, “Effects of phosphorus implantation time on the optical, structural, and elemental properties of ZnO thin films and its correlation with the 3.31-eV peak,” Journal of Alloys and Compounds, https://doi.org/10.1016/j.jallcom.2018.07.224, I.F. 3.779
152. B. Tongbram, S. Sengupta and S. Chakrabarti, “Impact of InxGa(1-X)As Capping Layer in Impeding Indium Desorption from Vertically Coupled InAs/GaAs Quantum Dot Interfaces,” ACS Applied Nano Materials, https://doi.org/10.1021/acsanm.8b01170.
151. S. M. M. Dhar Dwivedi, A. Ghosh, H. Ghadi, P. Murkute, P Chinnamuthu, S. Chakrabartty,5, S. Chakrabarti, Satyaban Bhunia and A. Mondal1, “Oblique angle deposited InN quantum dots array for infrared detection,” Journal of Alloys and Compounds, https://doi.org/10.1016/j.jallcom.2018.06.346, I.F. 3.779
150. D. Das, D.P. Panda, B. Tongbram, J. Saha, V. Chavan and S. Chakrabarti,”Optimization of Hybrid InAs Stranski Krastanov and Submonolayer Quantum Dot Heterostructures and Its Effect on Photovoltaic Energy Conversion Efficiency In Near Infrared Region,“ Solar Energy, https://doi.org/10.1016/j.solener.2018.06.030, I.F. 4.374
149. D. Das, D.P. Panda, B. Tongbram, J. Saha, V. D. Prasad, S. M. Singh, H. Rawool, V.R. Chavan and S. Chakrabarti, “Improved near infrared energy harvesting through heterogeneously coupled SK on SML quantum dot heterostructure,” Solar Energy Materials and Solar Cells, https://doi.org/10.1016/j.solmat.2018.05.053, I.F. 5.018
148. J. Saha, D. P. Panda and S. Chakrabarti,”Tuning the Optoeletronic Characteristics of Strain Coupled InAs/GaAs Bilayer Quantum Dot Heterostructures through Compositional and Structural Variabilities,“ Superlattices and Microstructures, https://doi.org/10.1016/j.spmi.2018.05.057, I.F. 2.099
147. H. Ghadi, P. Murkute, A. Ghosh, S. M. M. Dhar Dwivedi, A. Mondal and S. Chakrabarti,”Ultrasensitive zinc magnesium oxide nanorods based micro-sensor platform for UV detection and light trapping,“ Sensors & Actuators: A. Physical, https://doi.org/10.1016/j.sna.2018.05.028, I.F. 2.311
146. M. Biswas, V. Chavan, S. Zhao, Z. Mi and S. Chakrabarti, “Passivation of Surface States of AlGaN Nanowires using H3PO4 Treatment to Enhance the Performance of UV-LEDs and Photoanodes”, ACS Applied Nano Materials. https://doi.org/10.1021/acsanm.8b00447.
145. P. Murkute, S. Vasta, H. Ghadi, S. Saha and S. Chakrabarti, “Role of Pzn-2Vzn center on the luminescence properties of phosphorus-doped ZnO thin films by varying doping concentration,” Journal of Luminescence, https://doi.org/10.1016/j.jlumin.2018.04.002 I.F. 2.732
144. H. Ghadi, J. Patwari, P. Murkute, D. Das, P. K. Singh, S. Dubey, M. Bhatt, A. Chatterjee, A. Balgharkashi, S. K. Pal and S. Chakrabarti , “Optimizing dot-in-a-well infrared detector architecture for achieving high optical and device efficiency corroborated with theoretically simulated model,” Journal of Alloys and Compounds, https://doi.org/10.1016/j.jallcom.2018.04.001, I.F. 3.779
143. M. Biswas, A. Balgarkashi, R. Makkar, A. Bhatnagar, S. Sheshadri, S. Chakrabarti1*, ” Vertical strain-induced dot size uniformity and thermal stability of InAs/GaAsN/GaAs coupled quantum dots,“ Journal of Alloys and Compounds, https://doi.org/10.1016/j.jallcom.2018.03.163, I.F. 3.779
142. L. Tyagi, S. K. Pandey and S. Chakrabarti, “Improved absorbance and near infrared dispersion of AuGe Nanoparticles over Au nanoparticles prepared with similar thermal annealing environment,” Plasmonics, https://doi.org/10.1007/s11468-018-0710-x, I.F. 2.366
141. J. Saha, D. Panda and S. Chakrabarti, “Enhanced Luminescence and Optical Performance through Strain Minimization in Self-assembled InAs QDs using Dual quaternary-ternary/ternary-quaternary Capping,” Journal of luminescence, https://doi.org/10.1016/j.jlumin.2018.01.010, I.F. 2.732
140. A. Ghosh, S. M. M. D. Dwivedi, H. Ghadi, P. Chinnamuthu, S. Chakrabarti and A. Mondal1,*”Boosted UV sensitivity of Er doped In2O3 thin films using plasmonic Ag nanoparticle based surface texturing,“ Plasmonics, https://doi.org/10.1007/s11468-017-0679-x, I.F. 2.139
139. D. Panda, J. Saha, A. Balgarkashi, S. Shetty, H. Rawool, S. M. Singh, S. Upadhyay, B. Tongbram, and S. Chakrabarti,”Optimization of dot layer periodicity through analysis of strain and electronic profile in vertically stacked InAs/GaAs Quantum dot heterostructure,“ Journal of Alloys and Compounds, https://doi.org/10.1016/j.jallcom.2017.11.086, I.F. 3.779
138. M. Biswas, S. Singh, A. Balgarkashi, R. L. Makkar, Anuj Bhatnagar, N.B.V. Subrahmanyam, S. K. Gupta, P. Bhagwat, S. Chakrabarti, “Ultrathin GaAsN matrix-induced reduced full width at half maximum of GaAsN/InAs/GaAsN dot-in-a-well heterostructures with extended emission wavelength,” Journal of Luminescence, https://doi.org/10.1016/j.jlumin.2017.10.056, I.F. 2.732
137. P. Murkute, H.Ghadi, S.Patil ,H. Rawool, S.K. Pandey and S. Chakrabarti,”Emerging material Zinc Magnesium Oxide based nanorods: Growth process optimization and sensor application towards humidity detection,,“ Sensors & Actuators: B. Chemical, https://doi.org/10.1016/j.snb.2017.10.078, I.F. 5.667
2017
136. Animesh Halder, Probir Kumar Sarkar, Poulomi Pal, Subhananda Chakrabarti, Prantar Chakrabarti, Debasis Bhattacharyya, Rajib Chakraborty and Samir Kumar Pal”Digital Camera Based Spectrometry for the Development of Point-of-Care Anemia Detection on Ultra-low Volume Whole Blood Sample,“ IEEE Sensor Journal,Vol.17, No. 21, pp.7149-7156, 1 November 2017, https://doi.org/10.1109/JSEN.2017.2752371, I.F. 2.512
135. B. Tongbram, A. Mandal, S. Sengupta and S. Chakrabarti,”Impact of vertical inter-QDs spacing correlation with the strain energy in a coupled bilayer quantum dot heterostructure,“ Journal of Alloys and Compounds (accepted), https://doi.org/10.1016/j.jallcom.2017.07.215, I.F. 3.133
134. D. P. Panda, A. Ahmad, H. Ghadi, S. Adhikary, B. Tongbram and S. Chakrabarti*”Evidence of quantum dot size uniformity in strain-coupled multilayered In(Ga)As/GaAs QDs grown with constant overgrowth percentage,“ Journal of Luminescence; https://doi.org/10.1016/j.jlumin.2017.07.035, I.F. 2.693
133. M. Biswas, S. Singh, A. Balgarkashi, R. L. Makkar, Anuj Bhatnagar, N.B.V. Subrahmanyam, S. K. Gupta, P. Bhagwat, S. Chakrabarti, “Defect annihilation-mediated enhanced activation energy of GaAs0.979N0.021-capped InAs/GaAs quantum dots by H- ion implantation,” Thin Solid Films, https://doi.org/10.1016/j.tsf.2017.08.026, I.F. 1.9
132. D. Das, H. Ghadi, B. Tongbram, S.M. Singh and S. Chakrabarti,”The impact of confinement enhancement AlGaAs barrier on the optical and structural properties of InAs/InGaAs/GaAs submonolayer quantum dot heterostructures,“ Journal of Luminescence (accepted), https://doi.org/10.1016/j.jlumin.2017.06.054, I.F. 2.693
131. S. M. M. Dhar Dwivedi, S. Chakrabartty, H. Ghadi, P. Murkute, V. Chavan, S. Chakrabarti, S. Bhunia and A. Mondal,”Pine shaped InN Nanostructure growth via Vapour Transport method by own shadowing and Infrared detection,“ Journal of Alloys and Compounds (accepted), https://doi.org/10.1016/j.jallcom.2017.06.184, I.F. 3.133
130. B. Tongbram, A. Ahmad, S. Sengupta, A. Mandal, J. Singhal , A. Balgarkashi and S. Chakrabarti,”Optimization of InAs quantum dots through growth interruption on InAs/GaAs quantum dot heterostructure,“ Journal of Luminescence (accepted), https://doi.org/10.1016/j.jlumin.2017.06.030, I.F. 2.693
129. M. Biswas, N. Shinde, R. L. Makkar, A. Bhatnagar and S. Chakrabarti, “Annihilation of Arsenic-Nitrogen bonding defects in annealed InAsN quantum dots grown through nitrogen background pressure-Controlled SS-MBE,” Journal of Alloys and Compounds (accepted), http://dx.doi.org/10.1016/j.jallcom.2017.06.071, I.F. 3.133
128. S. K. Pandey, L. Tyagi, H. Ghadi, H. Rawool; S. Chakrabarti, “Utilization of self-assembled AuGe nanoparticles for improving performance of InGaAs/GaAs quantum dot infrared detector” Journal of Materials Science: Materials in Electronics (accepted), http://dx.doi.org/10.1007/s10854-017-7071-7, I.F. 1.5
127. P. Sarkar, S. Pal, N. Polley, R. Aich, A. Adhikari, A. Halder, S. Chakrabarti, P. Chakrabarti and S. Pal, “Development and Validation of a Noncontact Spectroscopic Device for Hemoglobin Estimation at Point-of-Care” Journal of Biomedical Optics, Vol.22, No.5,pp. 055006, May 2017, https://doi.org/10.1117/1.JBO.22.5.055006, I.F. 2.859
126. P. Murkute, H. Ghadi, S. Saha, S. K. Pandey, S. Chakrabarti”Enhancement in optical characteristics of c-axis-oriented radio frequency-sputtered ZnO thin films through growth ambient and annealing temperature,“ Materials Science in Semiconductor Processing, Vol. 66, Pages 1–8,1 August 2017, https://doi.org/10.1016/j.mssp.2017.03.026, I.F. 2.26
125. H. Ghadi, N. Sehara, P. Murkute and S. Chakrabarti, “Minimization of material inter-diffusion for thermally stable quaternary-capped InAs quantum dot via strain modification,” Superlattices and Microstructures, http://dx.doi.org/10.1016/j.spmi.2017.03.017. I.F. 2.117
124. K.C. Goma Kumari, H. Ghadi, D.R.M. Samudraiah and S. Chakrabarti,”Indigenous development of 320 × 256 focal-plane array using InAs/InGaAs/GaAs quantum dots-in-a-well infrared detectors for thermal imaging“, Current Science, Vol.112, No. 7, 10 April 2017, DOI: http://dx.doi.org/10.18520/cs/v112/i07/1568-1573.
123. K. C. Gomakumari, H.M.Rawool and S Chakrabarti, “Demonstration of indigenously fabricated midwave infrared InAs/GaSb type -II superlattice based focal plane arrays” Defence Science Journal, Vol. 67, No. 2, March-April 2017, pp. 149-153, DOI: http://dx.doi.org/10.14429/dsj.67.11178.
122. M. Biswas, B. Tongbram, N. Shinde, R. Makkar, A. Bhatnagar and S. Chakrabarti, “High nitrogen composition–induced low interfacial roughness of GaAs0.978N0.022/GaAs multiple quantum wells grown through solid-source molecular beam epitaxy,” Materials Research Bulletin,http://dx.doi.org/10.1016/j.materresbull.2016.12.032, I.F. 2.435
121. D. P. Panda, A. Balgarkashi, S. Shetty, H. Ghadi, B. Tongbram and S. Chakrabarti, “Ultranarrow spectral response of InGaAs QDIPs through the optimization of strain-coupled stacks and capping layer composition,” Materials Science in Semiconductor Processing, http://dx.doi.org/10.1016/j.mssp.2016.12.023, I.F. 2.3
120. J. Patwari, H. Ghadi, S. Sardar, J. Singhal, B. Tongbram, S. Shyamal, C. Bhattacharya, S. Chakrabarti, S. Pal,”Photo-induced electronic properties in single quantum well system: effect of excitonic lifetime“, Vol.4, No.1, pp.016301, Materials Research Express, https://doi.org/10.1088/2053-1591/aa5373.
119. M. Biswas, N. Shinde, R. Makkar, A. Bhatnagar and S. Chakrabarti,”Varying nitrogen background pressure; an efficient approach to improveelectrical properties of MBE-grown GaAsN thin films with less atomic disorder,“ Journal of Alloys and Compounds, Vol. 695,February 2017, pp. 3163-3169, http://dx.doi.org/10.1016/j.jallcom.2016.11.328, I.F. 3.133
2016
118. S. Aggarwal, S. Chakrabarti, R. Pinto and V.R. Palkar, “Room temperature magnetoelectric multiferroic behavior of 50 mol% Fe substituted PbTiO3 (PbTi0.5Fe0.5O3-δ) nanoparticles,” RSC Advances, Vol.6, pp.90132-90137,2016 I.F. 3.84
117. S. Upadhyay, A. Mandal, A. Agarwal, H. Ghadi, Goma Kumari K. C., A. Basu, N. B. V. Subrahmanyam, P. Singh and S. Chakrabarti,”Enhancement in multicolor photoresponse for quaternary capped In0.5Ga0.5As/GaAs quantum dot infrared photodetectors implanted with hydrogen ions“, Materials Research Bulletin, http://dx.doi.org/10.1016/j.materresbull.2016.07.030, I.F. 2.3
116. N. Polley, P. Sarkar, S. Chakrabarti, P. Lemmens and S. Pal,”DNA Biomaterial Based Fiber Optic Sensor: Characterization and Application for Monitoring in situ Mercury Pollution“, ChemistrySelect,Vol.1, pp.2916-2922,No.11, 2016, http://dx.doi.org/10.1002/slct.201600391.
115. P. Sarkar, N. Polley, S. Chakrabarti, P. Lemmens and S. Pal, “Nano-Surface Energy Transfer Based Highly Selective and Ultrasensitive “Turn on” Fluorescence Mercury Sensor,” ACS Sensor, http://dx.doi.org/10.1021/acssensors.6b00153.
114. Hari Shanker Gupta, A S Kiran Kumar, Maryam Shojaei Baghini, Subhananda Chakrabarti and D. K. Sharma, “Design of High precision ROIC for Quantum dot infrared photo detector,” IEEE Photonics Technology Letters, http://dx.doi.org/10.1109/LPT.2016.2560804,I.F. 2.11
113. S. Aggarwal, S. Satheesh, S. Chakrabarti, V. R. Palkar and A. Bhattacharya, “Fabrication and characterization of flexible films of poly(vinylidene fluoride)/Pb(Fe0.5Ti0.5)O3−δ multi-ferroic nanocomposite,” RSC Advances,Vol.6, pp.42892-42898, 2016, http://dx.doi.org/10.1039/C6RA01306F, I.F. 3.84
112. H. S. Gupta, A. S. Kiran Kumar, M. Shojaei Baghini, S. Chakrabarti, S. Mehta, A. Roy Chowdhury and D K Sharma, “Design of Current Mirror Integration ROIC for Snapshot Mode operation,” Journal of Semiconductors, Vo. 37, No. 10, October 2016.
111. S. Pandey, L. Tyagi, H. Ghadi, H. Rawool and S. Chakrabarti, “AuGe surface plasmon enhances photoluminescence of InAs/GaAs bilayer quantum dot heterostructure,” RSC Advances, Vol. 6, pp. 26908-26913, 2016, http://dx.doi.org/10.1039/C5RA27980A, I.F. 3.84
110. H. Ghadi, S. Sengupta, S. Shetty, A. Manohar, and S. Chakrabarti*, N. Pendyala, S. Prajapati and A. Kumar,”Comparison of three design architectures for quantum dot infrared photodetectors: InGaAs-capped dots, dots-in-a-well, and submonolayer quantum dots,“ IEEE Transactions on Nanotechnology, Vol.14, No.4, pp.603 - 607, http://dx.doi.org10.1109/TNANO.2015.2432044, I.F. 1.82
109. S. Upadhyay, Arjun Mandal, H. Ghadi, D. Pal, A. Basu, N. B. V. Subrahmanyam, P. Singh, and S. Chakrabarti,”Increment in peak detectivity (D*) up to two orders for In0.5Ga0.5As/GaAs quantum dot infrared photodetectors implanted with high energy protons,“ IEE Electronics Letters, Vo. 52, No.1, pp.61-63, January 2016, http://dx.doi.org/10.1049/el.2014.3934.
2015
108. S. Upadhyay, Arjun Mandal, H. Ghadi, D. Pal, A. Basu, N. B. V. Subrahmanyam, P. Singh, and S. Chakrabarti,”Effects of High-Energy Proton Implantation on the Luminescence Properties of InAs Submonolayer Quantum Dots,“ Journal of Luminescence,Vol. 158, pp. 149-152, February 2015, http://dx.doi.org/10.1016/j.jlumin.2014.09.043, I.F. 2.719 .
107. S. Saha, S. Pandey, S. Nagar and S. chakrabarti, ”“Detection of narrow linewidth acceptor peaks with p-type conduction in phosphorous implanted ZnMgO thin films,” Nanoscience and Nanotechnology Letters, Vol.7, pp.1-6, 2015, http://dx.doi.org/10.1166/nnl.2015.2044, I.F. 1.43
106. D. Das. H. Ghadi, S. Sengupta, A.Bhaldar, A. Manohar and S. Chakrabarti, “Optimization of the number of stacks in the submonolayer quantum dot heterostructure for infrared photodetectors,” IEEE Transactions on Nanotechnolog,http://dx.doi.org/10.1109/TNANO.2015.2513318, I.F. 1.82
105. S. Saha, S. K. Pandey, S. Nagar and S. Chakrabarti, “Effect of Annealing temperature on Optical and Electrical Properties of Nitrogen Implanted p-type ZnMgO Thin Films,” Journal of Materials Science: Materials in Electronics, Vol.26, pp.9759-9765, 2015, http://dx.doi.org/10.1007/s10854-015-3646-3, I.F. 1.57
104. H.Ghadi, S.Shetty, A.Balgarkashi, A. Agarwal, S.Adhikary, A.Manohar and S Chakrabarti,“Enhancement in peak detectivity and operating temperature of strain coupled InAs/GaAs quantum dot infrared photodetectors by rapid thermal annealing” IEEE Transactions on Nanotechnology, Vol.14, No.4, pp.668 - 672, http://dx.doi.org/10.1109/TNANO.2015.2425433 I.F. 1.82
103. S. Upadhyay, A. Mandal, H. Ghadi, D. Pal, A. Basu, A. Agarwal, N. B. V. Subrahmanyam, P. Singh and S. Chakrabarti,”Effects of high energy proton implantation on the material and electrical properties of In(Ga)As/GaAs QD heterostructures with a variation in capping layer,” Journal of Luminescence,Vol. 161, Pages 129-134, May 2015, http://dx.doi.org/10.1016/j.jlumin.2015.01.002. I.F. 2.719
102. S. Shetty, S. Adikary, H. Ghadi, A. Ahmad, S. Chakrabarti,”The optical properties of strain-coupled InAs/GaAs quantum-dot heterostructures with varying thicknesses of GaAs and InGaAs spacer layers,” Journal of Luminescence, Vol. 158, Pages 231-235, February 2015, http://dx.doi.org/10.1016/j.jlumin.2014.10.013, I.F. 2.719
101. A.Manohar, S. Sengupta, H. Ghadi, and S. Chakrabarti, “A detailed study of the effects of rapid thermal annealing on the luminescence properties of InAs sub-monolayer quantum dots,” Journal of Luminescence, http://dx.doi.org/10.1016/j.jlumin.2014.09.043. I.F. 2.719
2014
100. B. Tongbram, S. Shetty, H. Ghadi , S. Adikary, S. Chakrabarti*, “Enhancement in device performance by using quaternary capping over ternary in strain coupled InAs/GaAs quantum dot infrared photodetectors,” Applied Physics A: Materials Science and Processing (accepted),Volume 118, Issue 2, Pages 511-517,2014,http://dx.doi.org/10.1007/s00339-014-8854-9, I.F. 1.704
99. Hemant Ghadi , Akshay Agarwal , Sourav Adhikary , Binita Tongbram , Arjun Mandal and Subhananda Chakrabarti, “Effect of barrier thickness on structural, optical, and spectral behavior of vertically strain coupled InAs/GaAs quantum dot infrared photodetectors,” Journal of Vacuum Science and Technology B, Vol.32, No.5, Sep/Oct 2014 ,http://dx.doi.org/10.1116/1.4894461.
98. S. Nagar and S. Chakrabarti,“UV electroluminescence from a p-ZnO:P/n-ZnO homojunction diode,” Electronics Letters,Volume 50 issue 18, p.1307 –1309,28 August 2014, DOI:http://dx.doi.org/10.1049/el.2014.2055. I.F. 1.068
97. S. Saha, S.Nagar, S.Chakrabarti,“Effects of Phosphorus Doping by Plasma Immersion Ion Implantation on the Structural and Optical Characteristics of Zn0.85Mg0.15O,” Applied Physics Letters, Vol. 105, No.6, pp.061109,(2014),http://dx.doi.org/10.1063/1.4893138. I.F. 3.515
96. S. Nagar and S. Chakrabarti, “Realization of reliable p-type ZnO thin films by nitrogen implantation using plasma immersion ion implantation,” Superlattices and Microstructures,Vol.75, pp. 9-16, 2014, http://dx.doi.org/10.1016/j.spmi.2014.07.010. I.F. 2.1
95. H. Ghadi; S. Adhikary; A. Agarwal; J. Agawane; A. Mandal;S. Chakrabarti; Naresh B. P.and S. Prajapati,“One order enhancement of detectivity in quaternary capped InAs/GaAs quantum dot infrared photodetectors due to vertical coupling of quantum dot layers,” Thin Solid Films ,Vol.566,Oct 2014,pg. 1–4, http://dx.doi.org/10.1016/j.tsf.2014.07.010. I.F. 2
94. S. Nagar, S. K. Gupta and S. Chakrabarti, “Increased photoluminescence of hydrogen-implanted ZnO thin films deposited using a pulsed laser deposition technique,” Journal of Luminescence, Vol.153, pp. 307-311, September 2014,http://dx.doi.org/10.1016/j.jlumin.2014.03.052. I.F. 2.719
93. R. Sreekumar; Arjun Mandal; subhananda chakrabarti; S. K. Gupta,“H− ion implantation induced ten-fold increase of photoluminescence efficiency in single layer InAs/GaAs quantum dots,” Journal of Luminescence, http://dx.doi.org/10.1016/j.jlumin.2014.03.016. I.F. 2.719
92. S. Adhikary and S. Chakrabarti, “Spectral broadening due to post-growth annealing of a long-wave InGaAs/GaAs quantum dot infrared photodetector with a quaternary barrier layer,” Thin Solid Films, Vol.552, pp.146-149, 2014 ,http://dx.doi.org/10.1016/j.tsf.2013.11.010. I.F. 2
91. Hemant Ghadi, Sourav Adhikar, Akshay Agarwal and S. Chakrabarti, “Tuning in spectral response due to rapid thermal annealing on dot-in-a-well infrared photodetectors,” Superlattices and Microstructures, Vol. 65, January 2014, Pages 106–112,http://dx.doi.org/10.1016/j.spmi.2013.10.036. I.F. 2.1
2013
90. Hari Shanker Gupta, A S Kiran Kumar, Subhananda Chakrabarti, Sandip Paul, RM Parmar, DRM Shamudraiah, M.Shojaei Baghini and D. K. Sharma, “Design of Large dynamic range, low power, High precision ROIC for Quantum Dot Infrared Photo-detector,” Electronics Letters (accepted). I.F. 1.068
89. A. Arora, A. Mandal, S.Chakrabarti and S. Ghosh, “Magneto-optical Kerr effect spectroscopy based study of Lande g-factor for holes in GaAs/AlGaAs single quantum wells under low magnetic fields,” Journal of Applied Physics, Vol.113, pp.213505 (2013); http://dx.doi.org/10.1063/1.4808302. I.F. 2.2
88. Saumya Sengupta , Arjun Mandal , Keshav Lal Mathur , Hemant Ghadi and S. Chakrabarti, “A comprehensive study on molecular beam epitaxy-grown InAs sub-monolayer quantum dots with different capping combinations,” Journal of Vacuum Science and Technology B, 31(3), May/Jun 2013, http://dx.doi.org/10.1116/1.4805018.
87. A. Agarwal, S. Krishna and S. Chakrabarti, “Investigation of thermal interdiffusion in InAs/In0.15Ga0.85As/GaAs Quantum Dot-in-a-Well heterostructures,” Journal of Luminescence,Volume 143, November 2013, Pages 96-100,http://dx.doi.org/10.1016/j.jlumin.2013.04.030. I.F. 2.719
86. S. Shah, K. Ghosh, S. Jejurikar and S. Chakrabarti, “Ground-state energy trends in single and multilayered coupled InAs/GaAs quantum dots capped with InGaAs layers: Effects of InGaAs layer thickness and annealing temperature,” Materials Research Bulletin Volume 48, Issue 8, August 2013, Pages 2933-2939,http://dx.doi.org/10.1016/j.materresbull.2013.04.028. I.F. 2.3
85. A. Mandal et al, “Proposed mechanism to represent the suppression of dark current density by four orders with low energy light ion (H-) implantation in quaternary alloy-capped InAs/GaAs quantum dot infrared photodetectors”, Materials Research Buletin,Volume 48, Issue 8, August 2013, Pages 2886-2891,http://dx.doi.org/10.1016/j.materresbull.2013.04.007. I.F. 2.3
84. A. Mandal, U. Verma and S. Chakrabarti, “Effects of ex situ annealing on quaternary alloy (InAlGaAs) capped InAs/GaAs quantum dot heterostructures on optimization of optoelectronic and structural properties with variation in growth rate, barrier thickness, and seed quantum dot monolayer coverage,” Superlattices and Microstructures, Volume 58, June 2013, Pages 101-119. I.F. 2.1
83. R. Mondal, B. Bansal, A. Mondal, S. Chakrabarti and B. Pal, “Pauli blocking dynamics in optically excited quantum dots: A picosecond excitation-correlation spectroscopic study” Physical Review B,Vol. 87, pp.115317,2013, http://link.aps.org/doi/10.1103/PhysRevB.87.115317. I.F. 3.664
82. N. Basu, K. Ghosh, S. Kabi, S. Sengupta and S. Chakrabarti, “A detailed investigation on the impact of variation in growth rate, monolayer coverage and barrier thickness on the optical characteristics of InAs/GaAs bilayer quantum Dot heterostructures,” Superlattices and Microstructures,Vol.57,pp.150–157,May 2013, http://dx.doi.org/10.1016/j.spmi.2013.02.007. I.F. 2.1
81. Arjun Mandal , Akshay Agarwal , Hemant Ghadi , Goma Kumari K. C. , Arindam Basu , N. B. V. Subrahmanyam , Pitamber Singh and S. Chakrabarti, “More than one order enhancement in peak detectivity (D*) for quantum dot infrared photodetectors implanted with low energy light ions (H-),” Applied Physics Letters, Vol.102, pp.051105,2013, http://dx.doi.org/10.1063/1.4791675. I.F. 3.515
80. S. Nagar and S. Chakrabarti, “Effect of substrate temperature on the electrical and optical properties of pulsed laser deposited ZnO thin films,” Sensor Letters,Volume 11, Number 8, August 2013,pp. 1498-1503.
79. S. Adhikary and S. Chakrabarti, “Evidence of long-wave-infrared excited state transition at high temperature (200K) in 35-layer In0.50Ga0.50As/GaAs quantum dot infrared photodetector,” Journal of Vacuum Science and Technology B,31(3), May/Jun 2013, http://dx.doi.org/10.1116/1.4801791.
78. A. Mandal, U. Verma and S. Chakrabarti, “Thermal stability of quaternary alloy (InAlGaAs)-capped InAs/GaAs multilayer quantum dot heterostructures with variation in growth rate, barrier thickness, seed quantum dot monolayer coverage, and post-growth annealing,” Applied Physics A: Materials Science and Processing, Vol. 113, Issue 1, pp.215-220, 2013,http://dx.doi.org/10.1007/s00339-012-7521-2. I.F. 1.694
77. J. O. Kim , S. Sengupta , A. V. Barve , Y. D. Sharma , S. Adhikary , S. J. Lee , S. K. Noh , M. S. Allen , J. W. Allen , S. Chakrabarti and S. Krishna, “Multi-stack InAs/InGaAs Sub-monolayer Quantum Dots Infrared Photodetectors,” Applied Physics Letters, Vol.102, pp.011131, 2013, http://dx.doi.org/10.106/1.4774383. I.F. 3.515
76. S. Nagar and S. Chakrabarti, “Evidence of strong acceptor peaks in ZnO thin films doped with phosphorus by plasma immersion ion implantation technique,” Journal of Luminescence,http://dx.doi.org/10.1016/j.jlumin.2012.12.043. I.F. 2.719
75. R. M. Makhijani, S. Chakrabarti and V. A. Singh, “Photoluminescence Spectra of InAs Quantum Dots Embedded in GaAs Heterostructure,” Journal of Luminescence, http://dx.doi.org/10.1016/j.jlumin.2012.11.027. I.F. 2.719
74. S. Nagar, S. Chakrabarti and S K Gupta,“Structural, electrical, and optical characteristics of lithium-implanted ZnO thin films,” Superlattices and Microstructures,Volume 53, Pages 164–172,January 2013,Volume 53, Pages 164–172,January 2013, doi: http://dx.doi.org/10.1016/j.spmi.2012.10.008. I.F. 2.1
2012
73. S. Adhikary , Y. Aytac , S. Meesala , S. Wolde , A. G. U. Perera and S. Chakrabarti, “A multicolor, broadband (5-20 µm), quaternary-capped InAs/GaAs quantum dot infrared photodetector,” Applied Physics Letters, Vol. 101, pp.261114, 2012, http://dx.doi.org/10.1063/1.4773373. I.F. 3.515
72. S. Adhikary and S. Chakrabarti, “A detailed investigation on the impact of post-growth annealing on the materials and device characteristics of 35-layer In0.50Ga0.50As/GaAs quantum dot infrared photodetector with quaternary In0.21Al0.21Ga0.58As capping,” Volume 47, Issue 11,Pages 3317–3322, November 2012, Materials Research Bulletin, http://dx.doi.org/10.1016/j.materresbull.2012.07.032. I.F. 2.3
71. Ajit V. Barve, Saumya Sengupta, Jun Oh Kim, John Montoya, Brianna Klein, Mohammad Ali Shirazi-HD,Marziyeh Zamiri, Yagya D. Sharma,Sourav Adhikary, Sebastián E. Godoy, Woo-Yong Jang, Glauco R. C. Fiorante, S. Chakrabarti and Sanjay Krishna,“Barrier Selection Rules for Quantum Dots-in-a-Well Infrared Photodetector,” IEEE Journal of Quantum Electronics,Vol.48, No. 10,pp.1243 - 1251, October 2012, http://dx.doi.org/10.1109/JQE.2012.2208621. I.F. 2.113
70. S. Sengupta, J. O. Kim, A.V. Barve, S. Adhikary, Y.D. Sharma, N. Gautam, S. J. Lee, S. K. Noh, S. Chakrabarti and S. Krishna, “Sub-monolayer quantum dots in confinement enhanced dots-in-a-well heterostructure,” Applied Physics Letters, Vol.100, pp.191111, 2012, http://dx.doi.org/10.1063/1.4711214. I.F. 3.515
69. A.V. Barve, S. Meesala, S. Sengupta, J. O. Kim, S. Chakrabarti and S. Krishna, “Investigation of Non-uniform Electric Field in Intersubband Quantum Infrared Photodetectors” Applied Physics Letters, Vol.100, pp.191107, 2012, http://dx.doi.org/10.1063/1.4712601. I.F. 3.515
68. N. Halder, S. Adhikary and S. Chakrabarti“,Inhibition of emission wavelength blueshift in annealed InAs/GaAs quantum dot stacks: An important observation for their potential application in photovoltaic devices” to be published in Applied Physics A: Materials Science and Processing, Volume 107, Issue 4 (2012), Page 977-983, http://dx.doi.org/10.1007/s00339-012-6852-3. I.F. 1.694
67. A. Mandal, N. Halder, U. Verma and S. Chakrabarti,“The impact of monolayer coverage, barrier thickness and growth rate on the thermal stability of photoluminescence of coupled InAs/GaAs quantum dot hetero-structure with quaternary capping of InAlGaAs” Materials Research Bulletin, Volume 47,Issue 3,Pages 551–556,2012, http://dx.doi.org/10.1016/j.materresbull.2011.12.047. I.F. 2.3
66. S. Shah, N. Halder, S. Sengupta and S. Chakrabarti, “Comparison of Luminescence Properties of Bilayer and Multilayer InAs/GaAs Quantum Dots” Materials Research Bulletin, Vol. 47, No.1, pp. 130-134, January 2012, http://dx.doi.org/10.1016/j.materresbull.2011.09.013. I.F. 2.3
65. S. Nagar and S. Chakrabarti,“Effect of phosphorus irradiation on the structural, electrical, and optical characteristics of ZnO thin films,” Journal of Luminescence,Vol. 132, pp. 1089-1094, 2012, http://dx.doi.org/10.1016/j.jlumin.2011.12.058. I.F. 2.367
64. S. Banerjee, N. Halder and S. Chakrabarti, “Self-assembled InGaAs/GaAs Quantum Dot Photodetector on Germanium substrate” Physica Status Solid C, Vol. 9, No.2,pp.322-325,2012, http://dx.doi.org/10.1002/pssc.201100252.
2011
63. R. Makhijani, N. Halder, S. Sengupta and S. Chakrabarti, “Temperature Dependent Photoluminescence Investigation of the Effect of Growth Pause Induced Ripening in InAs/GaAs Quantum Dot Heterostructures” Materials Research Bulletin,Volume 47, Issue 3, Pages 820–825, 2012, http://dx.doi.org/10.101/j.materresbull.2011.11.059. I.F. 2.3
62. S. Chakrabarti, S. Adhikary, N. Halder, Y. Aytac and A. G. U. Perera, “High-performance, long-wave (~10.2 µm) InGaAs/GaAs quantum dot infrared photodetector with quaternary In0.21Al0.21Ga0.58As capping” Applied Physics Letters, Vol.99, No. 18,pp.181102, 2011, http://dx.doi.org/10.1063/1.3657142. I.F. 3.515
61. E. McCarthy, R. T. Rajendra Kumar, B. Doggett, S. Chakrabarti, R. J. O'haire, S. B. Newcomb, J. -P. Mosnier, M. O. Henry and E. McGlynn, “Effect of the crystallite mosaic spread on integrated peak intensities in 2Θ-ω measurements of highly crystallographically textured ZnO thin films,” Journal of Physics D: Applied Physics, Vol.44, pp.375401, 2011. I.F. 2.521
60. R. Sreekumar, A. Mandal and S. Chakrabarti, “Effect of high energy proton irradiation on InAs/GaAs quantum dots: Enhancement of photoluminescence efficiency (upto ~ 7 times) with minimum spectral signature shift”, Materials Research Bulletin,Vol.46, No.11,pp.1786-1793, Nov 2011 , http://dx.doi.org/10.1016/j.materresbull.2011.07.048. I.F. 2.3
59. K. Ghosh, S. Kundu, N. Halder, S. Messala and S. Chakrabarti, “Annealing of In0.45Ga0.55As/GaAs quantum dots overgrown with large monolayer (11 ML) coverage for applications in thermally stable optoelectronic devices” Solid State Communication,Vol.151, pp.1394-1399, October 2011, http://dx.doi.org/10.1016/j.ssc.2011.06.007.
58. S Adhikary, N Halder and S Chakrabarti, “Thermal stability of the peak emission wavelength in multilayer InAs/GaAs QDs capped with a combination capping of InAlGaAs and GaAs”, Journal of Nanoscience and Nanotechnology, Vol.11, NO.5, pp.4067-4072, May 2011.
57. S. Sengupta, S. Shah, N. Halder and S. Chakrabarti,“Investigation of larger monolayer coverage in the active layer of the bilayer InAs/GaAs quantum dot structure and effects of post-growth annealing”, Applied Physics A: Materials Science and Processing, Vol. 103, No.1, pp.245-250, April 2011. I.F. 1.694
2010
56. R. Sreekumar, A. Mandal and S. Chakrabarti,“Effect of heavy ion implantation on self assembled single layer InAs/GaAs quantum dots,” Journal of Physics D: Applied Physics, Vol.43, pp.505302, 2010. I.F. 2.521
55. S. Sengupta, N. Halder and S. Chakrabarti, “Effect of post-growth rapid thermal annealing on bilayer InAs/GaAs quantum dot heterostructure grown with very thin spacer thickness” Materials Research Bulletin, Vol. 45, No.11, pp. 1593-1597, November 2010. I.F. 2
54. S. Adhikary,K. ghosh, s. Chowdhury, N. Halder and S. Chakrabarti, “An approach to suppress the blueshift of photoluminescence peaks in coupled multilayer InAs/GaAs quantum dots by high temperature post growth annealing” Materials Research Bulletin, Vol. 45, No.10, pp. 1466-1469, October 2010. I.F. 2
53. S. Sengupta, S. Shah, N. Halder and S. Chakrabarti, “Comparison of single-layer and bilayer InAs/GaAs quantum dots with a higher InAs coverage”, Opto-Electronics Review, Vol.18, No.3, pp. 295-299, September 2010.
52. T. Patil, P. Mahajan and S. Chakrabarti, “Effect of progressive annealing on Silicon Nanostructures grown by Hot Wire Chemical Vapor Deposition,” Superlattices and Microstructures, Vol. 48, No. 2, pp.190-197, August 2010. I.F. 2
51. S. Banerjee, N. Halder and S. Chakrabarti, “Stranski-Krastanow growth of multilayer In(Ga)As/GaAs QDs on Germanium substrate” Applied Physics A: Material Science and Processing, Vol.99, No.4, pp.791-795, June 2010. I.F. 1.694
50. Srujan M, K Ghosh, S. Sengupta and S. Chakrabarti, “Presentation and experimental validation of a model for the effect of thermal annealing on the photoluminescence of self-assembled InAs/GaAs quantum dots” Journal of Applied Physics, Vol. 107, pp.123107, June 2010. I.F. 2.2
49. S. Adhikary, N. Halder and S. Chakrabarti, “Investigation of strain in self assembled multilayer InAs/GaAs Quantum Dot heterostructures” Journal of Crystal Growth, Vol.312, No.5, pp.724-729 ,15th February 2010.
48. S. Chowdhury, S. Adhikary, N. Halder and S. Chakrabarti “A Novel Approach to increase emission wavelength of InAs/GaAs quantum dots by using a quaternary capping layer” Opto-Electronics Review, Vol.18, No.3, pp.246-249, September 2010.
47. S. Nagar and S. Chakrabarti, “Evidence of p-doping in ZnO films deposited on GaAs,” Thin Solid Films, Vol. 518, No.16, pp.4542-4545, June 2010. I.F. 2
46. N.Halder, Suseendran. J, S. Chakrabarti, M. Herrera, M. Bonds and N. Browning,“Effect of InAlGaAs and GaAs combination barrier thickness on the duration of dot formation in different layers of stacked InAs/GaAs quantum dot heterostructure grown by MBE,” Journal of Nanoscience and Nanotechnology, Vol.10, No. 8, pp. 5202-5206(5), August 2010 .
2009
45. Suseendran J, N. Halder, S. Chakrabarti,“ Stacking of multilayer InAs quantum dots with combination capping of InAlGaAs and high temperature grown GaAs” Superlattices and Microstructures,Vol.46, No.6,pp.900-906,December 2009. I.F. 2
44. S. Sengupta, N. Halder and S. Chakrabarti,“Investigation of effect of varying growth pauses on the structural and optical properties of InAs/GaAs quantum dots heterostructure” Superlattices and Microstructures,Vol.46, No.4, pp.611-617, October 2009. I.F. 2
43. N. Halder, R. Rashmi, S. Chakrabarti, C. R. Stanley, M. Herrera and N. D. Browning, “A comprehensive study of the effect of in situ annealing at high growth temperature on the morphological and optical properties of self assembled InAs/GaAs QDs” Applied Physics A: Material Science and Processing, Vol.95, pp.713-720, April 2009. I.F. 1.694
2008
42. S. Chakrabarti, N. Halder, S. Sengupta, J. Charthad, S. Ghosh and C. R. Stanley “A detailed PL investigation on the effect of barrier thickness and monolayer coverage on bilayer InAs/GaAs QDs grown at a reduced growth rate”, Journal of Nanoelectronics and Optoelectronics,Vol.3, No.3, pp. 277-280(4), December 2008.
41. S. Chakrabarti, N. halder, S. Sengupta, J. Charthad, S. Ghosh and C. R. Stanley, “Vertical Ordering and Electronic Coupling in Bilayer Nanoscale InAs/GaAs Quantum Dots Separated by a Thin Spacer Layer”, Nanotechnology, Vol.19, pp.505704, December 2008. I.F. 3.672
40. N. Halder, S. Chakrabarti and C. R. Stanley, “Tunability of Photoluminescence of InAs/GaAs Quantum Dots By growth Pause Induced Ripening” Journal of Nanoscience and Nanotechnology, Vol.8,pp.6232–6237, December 2008.
Before Joining IIT Bombay
39. A. G. U. Perera, G. Ariyawansa, V. M. Apalkov, S. G. Mastik, X. H. Su, S. Chakrabarti and P. Bhattacharya, “Wavelenght and Poarization Selective Multi-band Tunneling quantum dot infrared detectors,” Opto-Electronics Review, Vol.15, No.4, pp. 223-228, 2007.
38. R. T. Rajendra Kumar, E. McGlynn, C. McLoughlin, S. Chakrabarti, M. Biswas, M. O. Henry, J. –P. Mosnier, K. Kumarappan and G. Hughes, “Control of ZnO Nanorod Array Density By Zn Supersaturation Variation and Effects on Field Emission”, Nanotechnology, Vol.18, pp.215704(6 pages), 2007.
37. Z. K. Wu, H. Choi, X. H. Su, S. Chakrabarti, P. Bhattacharya and T. B. Norris, “Ultrafast Electronic Dynamics in Unipolar n-doped InGaAs/GaAs Self-Assembled Quantum Dots, IEEE Journal of Quantum Electronics, Vol.43, No.6, pp.486-496, June 2007.
36. G. Ariyawansa, A. G. U. Perera, X. H. Su, S. Chakrabarti and P. Bhattacharya, “Multi-color Tunneling quantum dot infrared photodetectors operating at room temperature,” Iinfrared Physics and Technology, Vol.50, pp.156-161, 2007.
35. B. Doggett, S. Chakrabarti, R O’Haire, A. Meaney, E. McGlynn, M. O. Henry, and J. –P. Mosnier, “A Characterization of Phosphorus-doped ZnO Thin Films grown by Pulsed Laser Deposition,” Superlattices and Microstructures, Vol.42, pp.72-78, 2007.
34. S. Chakrabarti, B. Doggett, R O’Haire, E. McGlynn, M. O. Henry, A. Meaney and J. –P. Mosnier, “Characterization of Nitrogen-doped ZnO Thin Films grown by Plasma-Assisted Pulsed Laser Deposition on Sapphire Substrates,” Superlattices and Microstructures, Vol.42, pp.21-25, 2007.
33. S. Chakravarty, P. Bhattacharya and S. Chakrabarti, Y. Kang and M. E. Meyerhoff, “Multimodal Lasing in Photonic Crystal Microcavities,” Optics Letters, Vol.32, No.10, pp.1296-1298, 2007.
32. S. Chakrabarti, B. Doggett, R O’Haire, E. McGlynn, M. O. Henry, A. Meaney and J. –P. Mosnier, “P-type behavior above room temperature in Nitrogen-doped ZnO Thin film grown by plasma-assisted pulsed laser deposition,” Electronics Letters, Vol.42, No.20, pp.1181-1182, 28th September 2006.
31. M. Holub, J. Shin, S. Chakrabarti and P. Bhattacharya, “Spin-polarized Vertical-Cavity Surface-Emitting Laser: Epitaxial Growth Issues and Device Properties”, Journal of Vacuum Science and Technology B, Vol.24, No.3, pp.1510-1513, May/June 2006.
30. L. A. Farina, X. Bai, C. Kurdak, S. Chakrabarti and P. Bhattacharya, “Study of Quantum Hall Edge States with a Single Electron Transistor Coupled to an Antidot,” Physica E: Low Dimensional Systems & Nanostructures, Vol.34, pp.187-190, 2006.
29. X. Bai, T. Eckhause, S. Chakrabarti, P. Bhattacharya, R. Merlin and C. Kurdak, “Phonon detection Using Quasi-One Dimensional Quantum Wires,” Physica E: Low Dimensional Systems & Nanostructures, Vol.34, pp.592-595, 2006.
28. J. Topolancik, S. Chakravarty, S. Chakrabarti and P. Bhattacharya, “Electrically injected quantum dot photonic crystal microcavity light sources,” Optics Letters , Vol.31, No.2, pp.232-234, January 2006.
27. S. Chakravarty, J. Topolancik, P. Bhattacharya, S. Chakrabarti, Y. Kang and M. E. Meyerhoff, “Ion Detection With Photonic Crystal Microcavities,” Optics Letters, Vol.30, No. 19, pp.2578-2580, October 2005.
26. M. Holub, J. Shin, S. Chakrabarti and P. Bhattacharya, “Electrically-injected spin-polarized vertical-cavity surface-emitting laser,” Applied Physics Letters, Vol. 87, No. 19, pp.091108 (3 pages), August 2005..
25. X. H. Su, S. Chakrabarti, P. Bhattacharya, G. Ariyawansa and A. G. U. Perera, “A Resonant tunneling quantum Dot Infrared photodetector,” IEEE Journal of Quantum Electronics, Vol.41, No. 7, pp.974-979, July 2005 .
24. S. Chakrabarti, A. D. Stiff-Roberts, X. H. Su, P. Bhattacharya, G. Ariyawansa and A. G. U. Perera, “High Performance Mid-Infrared Quantum Dot Infrared Photodetectors,” Journal of Physics D: Applied Physics, Special issue”Self Organized Quantum dots”, July 2005.
23. P. Bhattacharya, X. H. Su, S. Chakrabarti, G. Ariyawansa and A. G. U. Perera, “Characteristics of a tunneling quantum dot infrared photodetector operating at room temperature,” Applied Physics Letters, Vol. 86, No. 19, pp.191106 (3 pages), May 2005.
22. S. Chakrabarti, M. Holub, P. Bhattacharya, T. D. Mishima, M. B. Santos, M. B. Johnson and D. A. Blom, “Spin Polarized Light Emitting Diodes with Mn-doped InAs Quantum dots Nanomagnets as Spin Aligner,” Nano Letters, Vol. 5, No.2, pp.209-212, February 2005.
21. J. N. Gleason, M. E. Hjelmstad, V. D. Dasika, R. S. Goldman, S. Fathpour, S. Chakrabarti and P. Bhattacharya, “Nanometer-scale studies of point defect distributions in GaMnAs alloys,” Applied Physics Letters, Vol. 86, pp.011911(3-pages), January 2005.
20. S. Chakrabarti, X. H. Su, P. Bhattacharya, G. Ariyawansa and A. G. U. Perera, “Characteristics of a multi-color InGaAs/GaAs quantum dot infrared photodetector,” IEEE Photon. Technol. Lett., Vol. 17, pp.178-180, January 2005.
19. D. Chen, T. E. Murphy, S. Chakrabarti and J. D. Phillips, “Optical Waveguiding In BaTiO3/MgO/AlxOy/GaAs Heterostructures ,” Applied Physics Letters, Vol. 85, pp.5206-5208, November 2004.
18. X. H. Su, S. Chakrabarti, A. D. Stiff-Roberts, J. Singh and P. Bhattacharya, “Novel Quantum Dot Photodetector Design Based on Double Barrier Resonant Tunneling,” Electronics Letters, Vol.40, pp.1082-1083, August 2004.
17. M. Holub, S. Chakrabarti, S. Fathpour, P. Bhattacharya, Y. Lei, and S. Ghosh, “Mn-doped InAs self-organized diluted magnetic quantum dot layers with Curie temperatures above 300K,” Applied Physics Letters, Vol.85, pp.973-975, August 2004.
16. S. Fathpour, M. Holub, S. Chakrabarti and P. Bhattacharya, “Spin-polarized quantum dot light emitting diodes with high polarization efficiency at high temperatures,” Electronics Letters, Vol.40, No.4, pp.694-695, May 2004.
15. S. Chakrabarti, A. D. Stiff-Roberts, P. Bhattacharya, and S. Kennerly, “Heterostructures for Achieving Very Large Responsivity in InAs/GaAs Quantum Dot Infrared Photodetectors,” Journal of Vacuum Science and Technology B, Vol.22, No.3, pp.1499-1502, May/June 2004.
14. S. Chakrabarti, A. D. Stiff-Roberts, P. Bhattacharya, S. Gunapala, S. Bandara, S.B. Rafol and S. W. Kennerly, “High temperature operation of InAs/GaAs quantum dot infrared photodetector with large responsivity and detectivity,” IEEE Photonics Technology Letters , Vol.16, No.5, pp. 1361-1363, May 2004.
13. S. Chakrabarti, S. Fathpour, K. Moazzami, J. Phillips, N. Browning and P. Bhattacharya, “Pulsed laser annealing of self-organized InAs/GaAs quantum dots,” Journal of Electronic Materials(letters), Vol.33, No.4, pp. L5- L8, April 2004.
12. A. D. Stiff-Roberts, X. H. Su, S. Chakrabarti and P. Bhattacharya, “Contribution of field-assisted tunneling emission to dark current in InAs/GaAs quantum dot infrared photodetectors,” IEEE Photonics Technology Letters, Vol.16, No.3, pp.867-869, March 2004.
11. S. Chakrabarti, A. D. Stiff-Roberts, P. Bhattacharya and S. W. Kennerly, “High responsivity AlAs/InAs/GaAs superlattice quantum dot infrared photodetector,” Electronics Letters, Vol.40, No.3, pp.197-198, February 2004.
10. S. Chakrabarti, P. Bhattacharya, A. D. Stiff-Roberts, Y. Y. Lin, J. Singh, Y. Lei, and N. Browning, “Intersubband absorption in annealed InAs/GaAs quantum dots: a case for polarization-sensitive infrared detection,” Journal of Physics D: Applied Physics, vol. 36, pp. 1794-1797, July 2003.
9. B. Kochman, A. D. Stiff-Roberts, S. Chakrabarti, J. D. Phillips, S. Krishna, J. Singh, and P. Bhattacharya, “Absorption, carrier lifetime, and gain in InAs/GaAs quantum dot infrared photodetectors,” IEEE Journal of Quantum Electronics, vol. 39, pp. 459-467, March 2003.
8. A. D. Stiff-Roberts, S. Chakrabarti, S. Pradhan, B. Kochman, P. Bhattacharya, “Raster-scan imaging with normal-incidence, mid-infrared InAs/GaAs quantum dot infrared photodetectors,” Applied Physics Letters, vol. 80, pp. 3265-3267, May 2002.
7. S. Dhar and S. Chakrabarti, “Large photoresponse of CdO/Porous Si diodes,” Semicond. Sci. Technol., vol.15, L.39-L40, Nov. 2000.
6. S. Chakrabarti and S. Dhar, “Temperature-dependent behavior of chalcogenide thin-film contacts on porous silicon,” Solid State Phenomena, Vol.55, pp.77-79, 1997.
5. S. Chattopadhyay, L. K. Bera, K. Maharatna, S. Chakrabarti, S. Dhar, S. K. Ray and C. K. Maiti, “Schottky diode characteristics of Ti on strained-Si,” Solid State Electronics, Vol. 41, pp.1891-1893, Dec.1997.
4. S. Dhar and S. Chakrabarti, “Properties of chemically deposited Cu2S films on porous silicon,” J. Appl. Phys.., vol.82, pp.655-657, Jul. 1997.
3. S. Dhar and S. Chakrabarti, “Electroless Ni plating on n- and p-type porous Si for ohmic and rectifying contacts,” Semicond. Sci. Technol., vol.11, pp.1231-1234, Aug. 1996.
2. S. Dhar and S. Chakrabarti, “Electroless Nickel Plated contacts on Porous silicon,” Applied Physics Letters, vol.68, pp.1392-1394, March 1996.
1. P. Chattopadhyay, D. P. Haldar, S. Chakrabarti and M. Ray, “Effect of Deep-level Impurities on the Grain-Boundary Potential of a Polycrystalline Semiconductor,” Phys Stat SolidiA-Applied Research, vol. 142, pp. 117-125, March 1994.
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