I. DEPARTMENT OF SCIENCE AND TECHNOLOGY, GOVERNMENT OF INDIA, Grant: INR 38 lakhs, Completed
“A Detailed Photoluminesce Investigation of the Impact of Annealing on Nano-Scale In(Ga)As/GaAs-based Quantum Dot Heterostructures”
Principal Investigator; project completed and adjudged “excellent” by SERC-DST-EECS Review Panel. In order to enhance the efficiency of future Quantum Dot (QD)-based devices, various annealing techniques, such as Rapid thermal anneal (RTA), pulsed laser anneal (PLA) etc. were applied to determine the optimal technique and most conductive conditions for enhancing QD uniformity.
II. NAVAL RESEARCH BOARD, DEFENCE RESEARCH AND DEVELOPMENT ORGANIZATION (DRDO), GRANT: INR 38.5 LAKHS, Completed
“Development of Ferroelectric and Multiferroic MEMS Devices”
Principal Investigator; the project aimed at developing MEMS sensors and RF devices using novel materials (Dy/Tb-doped BiFeO3 and PbTi1-xFexO3) developed by the research team which simultaneously exhibited ferroelectric and ferromagnetic ordering at room temperature with desired coupling coefficient between two order parameters.
III. DEPARTMENT OF SCIENCE AND TECHNOLOGY, GOVERNMENT OF INDIA, Grant: INR 38 lakhs, Completed
“Control and Optimization of Pulsed Laser Deposition Technique for Growth of ZnO-based Materials and Devices”
Co-Principal Investigator; the project attempted to deposit ZnO uniformly over a given substrate through pulsed laser deposition by introducing control theory. The project also included the deposit of p-doped ZnO films for applications to light emitting diode (LED) devices.
IV. DEPARTMENT OF SCIENCE AND TECHNOLOGY, GOVERNMENT OF INDIA, GRANT: INR 58 LAKHS, Completed
“An Investigation into the Impact of Annealing on the Optical, Electrical and Spectral Characteristics of InAs/GaAs-based Nano-Scale Quantum Dot Heterostructures”
Principal Investigator; project studies the impact of annealing on (a) optical properties, (b) transport properties, and (c) device spectral response of different types of quantum dot heterostructures. As part of the project, temperature-dependent photoluminescence (PL), current-voltage (I-V) and spectral response measurements are being undertaken on a wide range of samples.
V. INDIAN SPACE RESEARCH ORGANISATION (ISRO), GRANT: ~INR 42 CRORES, Ongoing
“Design, Development, Test, and Delivery of Indigenous Infrared Focal Plane Arrays”
The scope of the project is to design, develop, test, and deliver GaAs-based Quantum Dot/Dot-in-a-Well Infrared Focal Plane Arrays (IRFPAs). The term ‘Focal Plane Array’ is used to refer to a system with a large number of pixels (detector elements) arranged in a 2-dimensional array format, located at the focal plane of an imaging system.
VI. DEFENCE RESEARCH AND DEVELOPMENT ORGANIZATION (DRDO), GRANT: INR 6 CRORES, Completed
“Development of MWIR and LWIR Type II InAs/GaSb Superlattice Heterostructures for Third Generation IR Photodetectors”
The scope of the project is the development of mid-wave and long-wave infrared photodetectors based on Type II InAs/GaSb superlattice technology.
VII. SERI, DEPARTMENT OF SCIENCE AND TECHNOLOGY, GOVERNMENT OF INDIA, GRANT: INR 1 CRORE, Ongoing
“In(Ga)As/GaAs Quantum Dot Solar Cell”
Project studies the optimization of varied quantum dot heterostructures so as to improve efficiency of solar cells on one hand and harvest near-infrared photons on the other.
VIII. Department of Science and Technology, Government of India, Grant: INR 55 Lakhs, Completed
“An Investigation on the Optical, Electrical and Spectral Characteristics of Strain-Coupled InAs/GaAs-based Nano-Scale Quantum Dot Heterostuctures Devices”
IX. NANOMISSION, Department of Science and Technology, Government of India, Grant: INR 2.14 CRORES, Ongoing
“An investigation on the optical, electrical and spectral characteristics of strain-coupled multilayer (x10, x20,…) In(Ga)As/GaAs based nano-scale quantum dot heterostructures”
Principal Investigator: This research proposal will initially investigate strain-coupled In(Ga)As/GaAs quantum dot heterostructures for infrared detector applications and finally implement the optimized heterostructure in a 320x256 Focal Plane Array for thermal imager application.
X. SERB, INDIA, Grant: INR 72 lakhs
“A detailed investigation on the structural and opto-electrical characteristics of coupled stranski-krastanov (S-K) - sub mono layer (SML) In(Ga)As/GaAs Quantum Dot Heterostructures and devices,”
Principal Investigator: This research proposal will investigate strain-coupled heterogenous SK and SML QD families for solar cell and infrared detector applications.
XI. NCETIS - National Center of Excellence in Technology for Internal Security, Grant: INR 10 Crores, Ongoing
“Thermal Imaging” - Development of indigenous mid-wave and long-wave Thermal Imagers for night vision and surveillance applications
“Thermal Camera for Body Temperature screening” submitted under WRCB’s 7th call for project proposals (Fight against COVID-19)