Course Content
Environment for VLSI Technology : Clean room and safety requirements. Wafer cleaning processes and wet chemical etching techniques. Impurity incorporation : Solid State diffusion modelling and technology; Ion Implantation modelling, technology and damage annealing; characterisation of Impurity profiles. Oxidation : Kinetics of Silicon dioxide growth both for thick, thin and ultrathin films. Oxidation technologies in VLSI and ULSI; Characterisation of oxide films; High k and low k dielectrics for ULSI. Lithography : Photolithography, E-beam lithography and newer lithography techniques for VLSI/ULSI; Mask generation. Chemical Vapour Deposition techniques : CVD techniques for deposition of polysilicon, silicon dioxide, silicon nitride and metal films; Epitaxial growth of silicon; modelling and technology. Metal film deposition : Evaporation and sputtering techniques. Failure mechanisms in metal interconnects; Multi-level metallisation schemes. Plasma and Rapid Thermal Processing: PECVD, Plasma etching and RIE techniques; RTP techniques for annealing, growth and deposition of various films for use in ULSI. Process integration for NMOS, CMOS and Bipolar circuits; Advanced MOS technologies.
Text / References
- 1 Texts/References1. James D.Plummer, Michael D.Deal, Peter B.Griffin, Silicon VLSITechnology: Fundamentals, Practice & Modeling, Prentice Hall2. The Science and Engineering of Microelectronic Fabrication, Stephen A.Campbell, Oxford University Press3. C.Y. Chang and S.M.Sze (Ed), ULSI Technology, McGraw Hill Companies Inc,1996.
- 2 S.M. Sze (Ed), VLSI Technology, 2nd Edition, McGraw Hill, 1988.
- 3 Research Papers