Course Content
A selection of topics from the following: Basic Growth Concepts: growth modes; crystallization phenomena; defects . Fundamentals and analysis of epitaxy: liquid phase epitaxy; molecular beam epitaxy; Chemical vapor deposition; LPCVD examples (SiO2, Si3N4, Poly-Si, Silicon epitaxy); MOCVD, examples: dielectrics, epitaxy of III-V; PECVD; ALD. Material Systems and Structures: GaAs and InP based materials : AlGaAs, GaInAs and InGaAsP; substrates, material purity, doping, ordering; heterostructures, interfaces; strained layer growth, critical thickness; Group III nitrides: AlGaInN and InGaAsN; Device structures : Detectors, Lasers, HEMTs. Characterization of Nanoelectronic Materials: Photoluminescence; X-Ray diffraction; Transmission Electron Microscopy;Deep Level Transient spectroscopy; Atomic Force Microscopy; Secondary Electron Microscopy
Text / References
- 1 M. A. Herman, W. Richter and H. Sitter, Epitaxy: Physical principles and technical implementation, Springer, Berlin 2004.G. B. Stringfellow, Organno-metallic Vapor Phase Epitaxy: theory and practice, Academic Press, Boston, 1989.G. M. Blom, Liquid Phase Epitaxy, North-Holland, Amsterdam, 1974D. K. Schroder, Semiconductor Material and Device Characterization, Wiley-Interscience, New York, 1990. Research Papers