Environment for VLSI Technology: Clean room and safety requirements. Wafer cleaning processes and wet chemical etching techniques. Impurity incorporation: Solid State diffusion modeling and technology, Ion Implantation modeling, technology, damage annealing, characterization of Impurity profiles. Oxidation: Kinetics of Silicon dioxide growth both for thick, thin, and ultrathin films. Oxidation technologies in VLSI and ULSI, Characterization of oxide films, High k and low k dielectrics for ULSI.
Lithography: Photolithography, E-beam lithography, and newer lithography techniques for VLSI/ULSI; Mask generation. Chemical Vapour Deposition techniques: CVD techniques for deposition of polysilicon, silicon dioxide, silicon nitride and metal films, Epitaxial growth of silicon, modeling, and technology. Metal film deposition: Evaporation and sputtering techniques. Failure mechanisms in metal interconnect Multi-level metallization schemes. Plasma and Rapid Thermal Processing: PECVD, Plasma etching and RIE techniques, RTP techniques for annealing, growth, and deposition of various films for use in ULSI. Process integration for NMOS, CMOS, and Bipolar circuits, Advanced MOS technologies.