Radiation Effects on MOS Devices

Project Detail: Radiation Effects on MOS Devices- Sponsored by Dept. of Electronics for the period of 6 years from 1988 till 1994. I was Principal Investigator of this Project along with Prof Vasi and Prof. Lal. Total Outlay of Rs. 10.3 Millions. This project has been most successful project of our Group and we received International Visibility for our Efforts. We have successfully developed RADHARD MOS Technology particularly for MOS Insulators and showed a working NMOS IC chip Radhard for 1 Megarad of High Energy Gamma Radiation. Currently efforts are on to transfer the know-how to ITI Bangalore