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Electrical Engineering

Indian Institute of Technology Bombay

Electrical Engineering

Indian Institute of Technology Bombay

People

People

Faculty

Sandip Mondal
Sandip Mondal iit bombay
Qualifications

• Ph.D. Physical Sciences, Indian Institute of Science (IISc), 2017
• M.S., Physical Sciences, Indian Institute of Science (IISc), 2011
• B.Sc., Physics (Honours), University of Calcutta, 2009

Research Interests

• The physics and technology of semiconductor devices
• Neuromorphic Engineering for Artificial Intelligence, Materials & devices for brain-inspired computing.
• Flash memory technology – Floating gate, SONOS, Charge trapping materials
• Flexible electronics using cost-effective solution-processed semiconductor and dielectrics
• High-k gate dielectrics, Deep level and interface trap characterization, electronic transport
• Ultra-High-speed Capacitance Voltage Measurement System and Technology (uHSCV)
• Integrated circuits, and system design with emerging CMOS devices
• Quantum Technologies with Quantum Dots (QDs) and Nanoparticles (NPs) based devices

Work Experience

• Assistant Professor (Grade – I) in E.E. Department of IIT-Bombay (Sept 2021- present)
• Research fellow, NASA sponsored project in Purdue University, USA (Jan 2021-Sep 2021)
• Post-doctoral Scholar in Purdue University, West Lafayette, IN, USA (Sep 2019-Sep 2021)
• Staff Engineer (R & D Engineering) in Western Digital Corporation (Jan 2018- Sep 2019)
• Research Assistant in Physics Department of IISc-Bangalore (Jul 2017- Jan 2018)

Journal Papers

  1. Zhen Zhang, Sandip Mondal, and Shriram Ramanathan , "Neuromorphic learning with Mott insulator NiO", Proceedings of National Academy of Sciences of USA (PNAS), 2021.
  2. Sandip Mondal and Arvind Kumar, "Tunable Electronic Trap Energy in Sol-Gel Processed Dielectrics", IEEE Trans. on Electron Devices 68, 2021.
  3. Sandip Mondal, Tathagata Paul, Arindam Ghosh, and V. Venkataraman, "Gate-Controllable Electronic Trap Detection in Dielectrics", IEEE Electron Device Letters 41, 2020.
  4. Sandip Mondal, "Controllable surface contact resistance in solution-processed thin-film transistors due to dimension modification", Semiconductor Science and Technology 35, 2020.
  5. Gyanan Aman, Jayakrishna Khatei, Sandip Mondal, Arvind Kumar, and Ramesh C Mallik, "Optical sensing of ultra-trace As3+ species using 2-mercaptoethanol capped CdTe Quantum Dots in aqueous medium", Materials Research Express 6, 2019.
  6. Sandip Mondal and V. Venkataraman, "Low temperature below 200°C solution processed tunable flash memory device without tunneling and blocking layer", Nature Communications 10, 2019.
  7. Sandip Mondal and V. Venkataraman, "All inorganic solution processed three terminal charge trapping memory device", Applied Physics Letters 114, 2019.
  8. Arvind Kumar, Sandip Mondal, and K.S.R. Koteswara Rao, "DLTS Analysis and Interface Engineering of Solution Route Fabricated Zirconia Based MIS Devices Using Plasma Treatment", Journal of Electronic Materials 47, 2018.
  9. Arvind Kumar, Sandip Mondal, and K.S.R. Koteswara Rao, "Tunable band alignment and dielectric constant of solution route fabricated Al/HfO2/Si gate stack for CMOS applications", Journal of Applied Physics 121, 2017.
  10. Arvind Kumar, Sandip Mondal, and K.S.R. Koteswara Rao, "Experimental evidences of charge transition levels in ZrO2 and at the Si: ZrO2 interface by Deep Level Transient Spectroscopy", Applied Physics Letters 110(13), 2017.
  11. Sandip Mondal and V. Venkataraman, "Tunable electron affinity with electronic band alignment of solution processed dielectric", Applied Physics Letters 111(4), 2017.
  12. Gyanan, Sandip Mondal, and Arvind Kumar, "Tunable dielectric properties of TiO2 thin film based MOS systems for application in microelectronics", Supperlattice Microst 100, 2016.
  13. Arvind Kumar, Sandip Mondal, and K.S.R. Koteswara Rao, "Low temperature solution processed high-k ZrO2 gate dielectric for nanoelectonics", Appl. Surf. Science 370, 2016.
  14. Arvind Kumar, Sandip Mondal, and K.S.R. Koteswara Rao, "Critical investigation of high performance spin-coated high-k titania thin films based MOS capacitor", J. Mat. Science: Mat. Elec. , 2016.
  15. Arvind Kumar, Sandip Mondal, and K.S.R. Koteswara Rao, "Structural, electrical, band alignment and charge trapping analysis of nitrogen-annealed Pt/HfO2/p-Si (100) MIS devices", Applied Physics A 122(12), 2016.
  16. Sandip Mondal and V. Venkataraman, "All Inorganic Spin-coated Nanoparticle Based Capacitive Memory Devices", IEEE Elec. Dev. Lett. , 2016.
  17. Arvind Kumar, Sandip Mondal, and K.S.R. Koteswara Rao, "High performance sol-gel spin-coated titanium dioxide dielectric based MOS structures", Mat. Science in Semicon. Proce., 2015.
  18. Arvind Kumar, Sandip Mondal, and K.S.R. Koteswara Rao, "DLTS Analysis of Amphoteric Interface Defects in High-k TiO2 MOS Structures Prepared by Sol-Gel Spin-Coating", AIP Advances 5, 2015.

Editor
  1. Sandip Mondal, "Optically controllable memory hysteresis in solution processed ALPO dielectric", AIP Conference Proceedings 2265, , 2020.
  2. Sandip Mondal, "Tunable charge trapping behavior of solution processed ZrO2 (MOS) in presence of different optical illumination", AIP Conference Proceedings 2115, , 2019.
  3. Arvind Kumar, Sandip Mondal, and KSR Koteswara Rao, "Improved Performance of TiO2 based MOS Capacitor with Ultra-thin Al2O3 Layer", APS March Meeting, USA, , 2018.
  4. Arvind Kumar, Sandip Mondal, and KSR Koteswara Rao, "Facile fabrication and electrical investigations of nanostructured p-Si/n-TiO2 hetero-junction diode", AIP Conference Proceedings 1953, , 2018.
  5. Sandip Mondal, "Electrical behaviour of fully solution processed HfO2 (MOS) in presence of different light illumination", AIP Conference Proceedings 1942, , 2018.
  6. Sandip Mondal and Arvind Kumar, "Fully solution processed Al-TiO2-Si (MIS) structured photo-detector ", AIP Conference Proceedings 1953, , 2018.
  7. Gyanan, Sandip Mondal, and Arvind Kumar, "Impact of time-dependent annealing on TiO2 films for CMOS application", AIP Conf. Proc. 1832, 080075, , 2017.
  8. Arvind Kumar, Sandip Mondal, and K.S.R. Koteswara Rao, "Band alignment and electrical investigations of ultra-thin Al2O3 on Si by E-beam evaporation", AIP Conf. Proc. 1832, 080068, , 2017.
  9. Sandip Mondal and V. Venkataraman, "Scaling behavior of fully spin-coated TFT", AIP Conf. Proc. 1832, 060030, , 2017.
  10. Sandip Mondal and V. Venkataraman, "Flash Memory TFT Based on Fully Solution Processed Oxide", IEEE Conference Proceedings, , 2017.
  11. Arvind Kumar, Sandip Mondal, and K.S.R. Koteswara Rao, "Zirconium doped TiO2 thin films: A promising dielectric layer", AIP Conf. Proc. 1728, 020582, , 2016.
  12. Arvind Kumar, Sandip Mondal, and K.S.R. Koteswara Rao, "Interface investigation of solution processed high-k ZrO2/Si MOS structure by DLTS", APS March Meeting 2016, , 2016.
  13. Arvind Kumar, Sandip Mondal, and K.S.R. Koteswara Rao, "Electrical Study of Al/HfO2/p-Si (100) Gate Stack", AIP Conf. Proc. 1731, , 2016.
  14. Sandip Mondal, Arvind Kumar, and K.S.R. Koteswara Rao, "Highly Reliable Spin-coated Titanium Dioxide Dielectric", AIP Conf. Proc. 1731, , 2016.
  15. Sandip Mondal and V. Venkataraman, "Fully Spin-coated Memory TFT", IEEE Conference Proceedings , , 2016.
  16. Sandip Mondal and V. Venkataraman, "High-k TiO2 thin film prepared by sol-gel spin-coating method ", AIP Conf. Proc. 1665, 080015, , 2015.
  17. Sandip Mondal and V. Venkataraman, "All inorganic spin-coated nanoparticle memory device", IEEE Conference Proceedings, , 2015.

Address

  • Nanoelectronics Building (Room EA 111)
    Department of Electrical Engineering (Annex),
    IIT Mumbai 400076, India.

  • (O): +91-22-2576-9427
  • sandip@ee.iitb.ac.in
  • Visit Website
Sandip Mondal iit bombay
Sandip Mondal
Qualifications

• Ph.D. Physical Sciences, Indian Institute of Science (IISc), 2017
• M.S., Physical Sciences, Indian Institute of Science (IISc), 2011
• B.Sc., Physics (Honours), University of Calcutta, 2009

Research Interests

• The physics and technology of semiconductor devices
• Neuromorphic Engineering for Artificial Intelligence, Materials & devices for brain-inspired computing.
• Flash memory technology – Floating gate, SONOS, Charge trapping materials
• Flexible electronics using cost-effective solution-processed semiconductor and dielectrics
• High-k gate dielectrics, Deep level and interface trap characterization, electronic transport
• Ultra-High-speed Capacitance Voltage Measurement System and Technology (uHSCV)
• Integrated circuits, and system design with emerging CMOS devices
• Quantum Technologies with Quantum Dots (QDs) and Nanoparticles (NPs) based devices

Work Experience

• Assistant Professor (Grade – I) in E.E. Department of IIT-Bombay (Sept 2021- present)
• Research fellow, NASA sponsored project in Purdue University, USA (Jan 2021-Sep 2021)
• Post-doctoral Scholar in Purdue University, West Lafayette, IN, USA (Sep 2019-Sep 2021)
• Staff Engineer (R & D Engineering) in Western Digital Corporation (Jan 2018- Sep 2019)
• Research Assistant in Physics Department of IISc-Bangalore (Jul 2017- Jan 2018)

Journal Papers

  1. Zhen Zhang, Sandip Mondal, and Shriram Ramanathan , "Neuromorphic learning with Mott insulator NiO", Proceedings of National Academy of Sciences of USA (PNAS), 2021.
  2. Sandip Mondal and Arvind Kumar, "Tunable Electronic Trap Energy in Sol-Gel Processed Dielectrics", IEEE Trans. on Electron Devices 68, 2021.
  3. Sandip Mondal, Tathagata Paul, Arindam Ghosh, and V. Venkataraman, "Gate-Controllable Electronic Trap Detection in Dielectrics", IEEE Electron Device Letters 41, 2020.
  4. Sandip Mondal, "Controllable surface contact resistance in solution-processed thin-film transistors due to dimension modification", Semiconductor Science and Technology 35, 2020.
  5. Gyanan Aman, Jayakrishna Khatei, Sandip Mondal, Arvind Kumar, and Ramesh C Mallik, "Optical sensing of ultra-trace As3+ species using 2-mercaptoethanol capped CdTe Quantum Dots in aqueous medium", Materials Research Express 6, 2019.
  6. Sandip Mondal and V. Venkataraman, "Low temperature below 200°C solution processed tunable flash memory device without tunneling and blocking layer", Nature Communications 10, 2019.
  7. Sandip Mondal and V. Venkataraman, "All inorganic solution processed three terminal charge trapping memory device", Applied Physics Letters 114, 2019.
  8. Arvind Kumar, Sandip Mondal, and K.S.R. Koteswara Rao, "DLTS Analysis and Interface Engineering of Solution Route Fabricated Zirconia Based MIS Devices Using Plasma Treatment", Journal of Electronic Materials 47, 2018.
  9. Arvind Kumar, Sandip Mondal, and K.S.R. Koteswara Rao, "Tunable band alignment and dielectric constant of solution route fabricated Al/HfO2/Si gate stack for CMOS applications", Journal of Applied Physics 121, 2017.
  10. Arvind Kumar, Sandip Mondal, and K.S.R. Koteswara Rao, "Experimental evidences of charge transition levels in ZrO2 and at the Si: ZrO2 interface by Deep Level Transient Spectroscopy", Applied Physics Letters 110(13), 2017.
  11. Sandip Mondal and V. Venkataraman, "Tunable electron affinity with electronic band alignment of solution processed dielectric", Applied Physics Letters 111(4), 2017.
  12. Gyanan, Sandip Mondal, and Arvind Kumar, "Tunable dielectric properties of TiO2 thin film based MOS systems for application in microelectronics", Supperlattice Microst 100, 2016.
  13. Arvind Kumar, Sandip Mondal, and K.S.R. Koteswara Rao, "Low temperature solution processed high-k ZrO2 gate dielectric for nanoelectonics", Appl. Surf. Science 370, 2016.
  14. Arvind Kumar, Sandip Mondal, and K.S.R. Koteswara Rao, "Critical investigation of high performance spin-coated high-k titania thin films based MOS capacitor", J. Mat. Science: Mat. Elec. , 2016.
  15. Arvind Kumar, Sandip Mondal, and K.S.R. Koteswara Rao, "Structural, electrical, band alignment and charge trapping analysis of nitrogen-annealed Pt/HfO2/p-Si (100) MIS devices", Applied Physics A 122(12), 2016.
  16. Sandip Mondal and V. Venkataraman, "All Inorganic Spin-coated Nanoparticle Based Capacitive Memory Devices", IEEE Elec. Dev. Lett. , 2016.
  17. Arvind Kumar, Sandip Mondal, and K.S.R. Koteswara Rao, "High performance sol-gel spin-coated titanium dioxide dielectric based MOS structures", Mat. Science in Semicon. Proce., 2015.
  18. Arvind Kumar, Sandip Mondal, and K.S.R. Koteswara Rao, "DLTS Analysis of Amphoteric Interface Defects in High-k TiO2 MOS Structures Prepared by Sol-Gel Spin-Coating", AIP Advances 5, 2015.

Editor
  1. Sandip Mondal, "Optically controllable memory hysteresis in solution processed ALPO dielectric", AIP Conference Proceedings 2265, , 2020.
  2. Sandip Mondal, "Tunable charge trapping behavior of solution processed ZrO2 (MOS) in presence of different optical illumination", AIP Conference Proceedings 2115, , 2019.
  3. Arvind Kumar, Sandip Mondal, and KSR Koteswara Rao, "Improved Performance of TiO2 based MOS Capacitor with Ultra-thin Al2O3 Layer", APS March Meeting, USA, , 2018.
  4. Arvind Kumar, Sandip Mondal, and KSR Koteswara Rao, "Facile fabrication and electrical investigations of nanostructured p-Si/n-TiO2 hetero-junction diode", AIP Conference Proceedings 1953, , 2018.
  5. Sandip Mondal, "Electrical behaviour of fully solution processed HfO2 (MOS) in presence of different light illumination", AIP Conference Proceedings 1942, , 2018.
  6. Sandip Mondal and Arvind Kumar, "Fully solution processed Al-TiO2-Si (MIS) structured photo-detector ", AIP Conference Proceedings 1953, , 2018.
  7. Gyanan, Sandip Mondal, and Arvind Kumar, "Impact of time-dependent annealing on TiO2 films for CMOS application", AIP Conf. Proc. 1832, 080075, , 2017.
  8. Arvind Kumar, Sandip Mondal, and K.S.R. Koteswara Rao, "Band alignment and electrical investigations of ultra-thin Al2O3 on Si by E-beam evaporation", AIP Conf. Proc. 1832, 080068, , 2017.
  9. Sandip Mondal and V. Venkataraman, "Scaling behavior of fully spin-coated TFT", AIP Conf. Proc. 1832, 060030, , 2017.
  10. Sandip Mondal and V. Venkataraman, "Flash Memory TFT Based on Fully Solution Processed Oxide", IEEE Conference Proceedings, , 2017.
  11. Arvind Kumar, Sandip Mondal, and K.S.R. Koteswara Rao, "Zirconium doped TiO2 thin films: A promising dielectric layer", AIP Conf. Proc. 1728, 020582, , 2016.
  12. Arvind Kumar, Sandip Mondal, and K.S.R. Koteswara Rao, "Interface investigation of solution processed high-k ZrO2/Si MOS structure by DLTS", APS March Meeting 2016, , 2016.
  13. Arvind Kumar, Sandip Mondal, and K.S.R. Koteswara Rao, "Electrical Study of Al/HfO2/p-Si (100) Gate Stack", AIP Conf. Proc. 1731, , 2016.
  14. Sandip Mondal, Arvind Kumar, and K.S.R. Koteswara Rao, "Highly Reliable Spin-coated Titanium Dioxide Dielectric", AIP Conf. Proc. 1731, , 2016.
  15. Sandip Mondal and V. Venkataraman, "Fully Spin-coated Memory TFT", IEEE Conference Proceedings , , 2016.
  16. Sandip Mondal and V. Venkataraman, "High-k TiO2 thin film prepared by sol-gel spin-coating method ", AIP Conf. Proc. 1665, 080015, , 2015.
  17. Sandip Mondal and V. Venkataraman, "All inorganic spin-coated nanoparticle memory device", IEEE Conference Proceedings, , 2015.

Address

  • Nanoelectronics Building (Room EA 111)
    Department of Electrical Engineering (Annex),
    IIT Mumbai 400076, India.

  • (O): +91-22-2576-9427
  • sandip@ee.iitb.ac.in
  • Visit Website

  • Nanoelectronics Building (Room EA 111)
    Department of Electrical Engineering (Annex),
    IIT Mumbai 400076, India.

  • (O): +91-22-2576-9427
  • sandip@ee.iitb.ac.in
  • Visit Website

IIT Bombay was established in the year 1957 and the department of Electrical Engineering (EE) has been one of its major departments since its inception.

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IIT Bombay was established in the year 1957 and the department of Electrical Engineering (EE) has been one of its major departments since its inception.

Links

Contact Us

Follow US

Linkedin Facebook Twitter Instagram

IIT Bombay was established in the year 1957 and the department of Electrical Engineering (EE) has been one of its major departments since its inception.

Links

Contact Us

Follow Us

Linkedin Facebook Twitter Instagram
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About | IITBEducation | Research | Site Map | Feedback | RTI | Contact Us

© , IITB. All rights reserved.

About | IITBEducation | Research | Site Map | Feedback | RTI | Contact Us

© 2023, IITB. All rights reserved.